CN203815438U - Novel reflection photoelectric pulse wave sensor - Google Patents
Novel reflection photoelectric pulse wave sensor Download PDFInfo
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- CN203815438U CN203815438U CN201420172636.XU CN201420172636U CN203815438U CN 203815438 U CN203815438 U CN 203815438U CN 201420172636 U CN201420172636 U CN 201420172636U CN 203815438 U CN203815438 U CN 203815438U
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- resistance
- electric capacity
- operational amplifier
- pulse wave
- infrared emission
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- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
Abstract
The utility model discloses a novel reflection photoelectric pulse wave sensor. The novel reflection photoelectric pulse wave sensor comprises six resistors, namely a first resistor to a sixth resistor respectively, six capacitors, namely a first capacitor to a sixth capacitor respectively, a diode, an operational amplifier, and an infra-red emission receiver, wherein the electronic components of the sensor are arranged on a circular circuit board; the diameter of the circular circuit board is 23 mm; the infra-red emission receiver is arranged on the front surface of the chip, and all the rest electronic components are arranged on the back surface of the circuit board. The novel reflection photoelectric pulse wave sensor adopts 940 nm infrared light to illuminate euangiotic parts of a human body, such as a fingertip, a wrist, and a lobe, adopts the principle that reducing haemoglobin and oxyhaemoglobin can change the reflectance light intensity due to different absorb properties for different wavelengths to measure the pulse, converts the intensity of the reflectance light into an electric signal to reflect the change of the pulse wave, is convenient to measure, and is relatively high in accuracy.
Description
Technical field
This utility model relates to a kind of pulse transducer, relates in particular to a kind of Novel reflection-type photoelectricity pulse wave sensor.
Background technology
Pulse is the tangible arteriopalmus arriving of body surface, and human recycle system is made up of heart, blood vessel, blood, is responsible for transporting of human body oxygen, carbon dioxide, nutrient and refuse; Via the left ventricular contraction of heart, extrusion flow enters aorta to blood, be delivered to immediately systemic arterial, tremulous pulse is formed pipeline by whippy connective tissue and muscle, to make arterial pressure become large and make caliber expansion when a large amount of blood enters tremulous pulse, can experience this expansion, i.e. pulse at the more shallow place of body surface tremulous pulse.The equal adopts pressure sensor of traditional pulse transducer, volume is larger, is not suitable for small-sized electronic product, simultaneously, owing to relying on pressure, sensor need to be clipped in or be pressed in measuring position, may occur loosening and causes measuring inaccurate.
Utility model content
The purpose of this utility model is just to provide in order to address the above problem a kind of Novel reflection-type photoelectricity pulse wave sensor.
This utility model is achieved through the following technical solutions above-mentioned purpose:
A kind of Novel reflection-type photoelectricity pulse wave sensor, comprise the first resistance to the six resistance, the first electric capacity to the six electric capacity, diode, operational amplifier and infrared emission receptor, the first end of described the 5th electric capacity respectively with the first end of described the first resistance, the positive pole of described diode is connected with the first end of described the 4th resistance and connects positive voltage, the second end of described the first resistance is connected with the positive pole of the light emitting diode of described infrared emission receptor, the negative pole of described diode is connected with the first end of described the second resistance and the cathode voltage input of described operational amplifier respectively, the second end of described the second resistance is connected with the colelctor electrode of the first end of described the second electric capacity and the infrared reception audion of described infrared emission receptor respectively, the second end of described the second electric capacity is connected with the first end of described the 6th electric capacity, the second end of described the 6th electric capacity is connected with the first end of described the 3rd electric capacity and the first end of described the first electric capacity respectively, the second end of described the 3rd electric capacity is connected with the first end of described the 4th electric capacity and the first end of described the 5th resistance respectively, the second end of described the 4th electric capacity respectively with the first end of described the 3rd resistance, the in-phase input end of described operational amplifier is connected with the second end of described the 4th resistance, the second end of described the 5th resistance is connected with the inverting input of described operational amplifier and the first end of described the 6th resistance respectively, the second end of described the 6th resistance is connected with the outfan of described operational amplifier, and the signal output part that the outfan of described operational amplifier is described sensor, the second end of described the 5th electric capacity respectively with the negative pole of the light emitting diode of described infrared emission receptor, the emitter stage of the infrared reception audion of described infrared emission receptor, the second end of described the first electric capacity, the second end of described the 3rd resistance and the cathode voltage input of described operational amplifier are connected and ground connection.
Particularly, each electronic component of described sensor is all arranged on a circular circuit board, the diameter of described circular circuit board is 23mm, and remaining each electronic component is all arranged on the back side of described circuit board except described infrared emission receptor is arranged on the front of described circuit board.
Particularly, the model of described operational amplifier is LMV321, and the model of described infrared emission receptor is ITR8037.
Particularly, the infrared light wavelength that described infrared emission receptor adopts is 940nm.
The beneficial effects of the utility model are:
This utility model Novel reflection-type photoelectricity pulse wave sensor adopts the euangiotic positions such as 940nm Infrared irradiation human body finger tip, wrist, ear-lobe, utilize reduced hemoglobin, with HbO2 Oxyhemoglobin, thereby the different principles that cause that intensity of reflected light changes of different wave length absorption characteristic are measured to pulse, utilize catoptrical intensity to be converted into the signal of telecommunication and reflect the variation of pulse wave with this, it is convenient to measure, and accuracy is higher simultaneously.
Brief description of the drawings
Fig. 1 is the circuit diagram of this utility model Novel reflection-type photoelectricity pulse wave sensor.
Fig. 2 is the Facad structure schematic diagram of this utility model Novel reflection-type photoelectricity pulse wave sensor;
Fig. 3 is the structure schematic diagram of this utility model Novel reflection-type photoelectricity pulse wave sensor.
Detailed description of the invention
Below in conjunction with accompanying drawing, the utility model is described in further detail:
As shown in Figure 1, this utility model Novel reflection-type photoelectricity pulse wave sensor, comprise that the first resistance R 1 is to the 6th resistance R 6, the first capacitor C 1 is to the 6th capacitor C 6, diode D1, operational amplifier U2 and infrared emission receptor S1, the first end of the 5th capacitor C 5 respectively with the first end of the first resistance R 1, the positive pole of diode D1 is connected with the first end of the 4th resistance R 4 and connects positive voltage, the second end of the first resistance R 1 is connected with the positive pole of the light emitting diode S1A of infrared emission receptor S1, the negative pole of diode D1 is connected with the first end of the second resistance R 2 and the cathode voltage input of operational amplifier U2 respectively, the second end of the second resistance R 2 is connected with the colelctor electrode of the first end of the second capacitor C 2 and the infrared reception audion S1B of infrared emission receptor S1 respectively, the second end of the second capacitor C 2 is connected with the first end of the 6th capacitor C 6, the second end of the 6th capacitor C 6 is connected with the first end of the 3rd capacitor C 3 and the first end of the first capacitor C 1 respectively, the second end of the 3rd capacitor C 3 is connected with the first end of the 4th capacitor C 4 and the first end of the 5th resistance R 5 respectively, the second end of the 4th capacitor C 4 respectively with the first end of the 3rd resistance R 3, the in-phase input end of operational amplifier U2 is connected with the second end of the 4th resistance R 4, the second end of the 5th resistance R 5 is connected with the inverting input of operational amplifier U2 and the first end of the 6th resistance R 6 respectively, the second end of the 6th resistance R 6 is connected with the outfan of operational amplifier U2, and the signal output part that the outfan of operational amplifier U2 is sensor, the second end of the 5th capacitor C 5 respectively with the negative pole of the light emitting diode S1A of infrared emission receptor S1, the emitter stage of the infrared reception audion S1B of infrared emission receptor S1, the second end of the first capacitor C 1, the second end of the 3rd resistance R 3 is connected with the cathode voltage input of operational amplifier U2 and ground connection, the model of operational amplifier U2 is LMV321, the model of infrared emission receptor S1 is ITR8037, the infrared light wavelength that infrared emission receptor S1 adopts is 940nm.
As shown in Figures 2 and 3, each electronic component of sensor is all arranged on a circular circuit board, and the diameter of circular circuit board is 23mm, and remaining each electronic component is all arranged on the back side of circuit board except infrared emission receptor S1 is arranged on the front of circuit board.
The operation principle of this utility model Novel reflection-type photoelectricity pulse wave sensor is as follows:
The light emitting diode S1A of infrared emission receptor S1 sends the infrared light of 940nm, by infrared emission receptor S1 for example, near position to be measured (human body finger tip, hands wrist, the euangiotic position such as ear-lobe), because reduced hemoglobin is different to different wave length absorption characteristic with hemoglobin with oxygen, therefore the intensity of reflected light of infrared light also can change, again the infrared reception audion S1B by infrared reception emitter is converted into the variation that the signal of telecommunication reflects pulse wave by catoptrical intensity, pulse signal is carried out after isolated DC processing, carry out again low-pass filtering amplification, finally can export pulse wave, the pulse wave signal that this device is exported is near fluctuation AC signal power supply Vcc/2.
Claims (4)
1. a Novel reflection-type photoelectricity pulse wave sensor, it is characterized in that: comprise the first resistance to the six resistance, the first electric capacity to the six electric capacity, diode, operational amplifier and infrared emission receptor, the first end of described the 5th electric capacity respectively with the first end of described the first resistance, the positive pole of described diode is connected with the first end of described the 4th resistance and connects positive voltage, the second end of described the first resistance is connected with the positive pole of the light emitting diode of described infrared emission receptor, the negative pole of described diode is connected with the first end of described the second resistance and the cathode voltage input of described operational amplifier respectively, the second end of described the second resistance is connected with the colelctor electrode of the first end of described the second electric capacity and the infrared reception audion of described infrared emission receptor respectively, the second end of described the second electric capacity is connected with the first end of described the 6th electric capacity, the second end of described the 6th electric capacity is connected with the first end of described the 3rd electric capacity and the first end of described the first electric capacity respectively, the second end of described the 3rd electric capacity is connected with the first end of described the 4th electric capacity and the first end of described the 5th resistance respectively, the second end of described the 4th electric capacity respectively with the first end of described the 3rd resistance, the in-phase input end of described operational amplifier is connected with the second end of described the 4th resistance, the second end of described the 5th resistance is connected with the inverting input of described operational amplifier and the first end of described the 6th resistance respectively, the second end of described the 6th resistance is connected with the outfan of described operational amplifier, and the signal output part that the outfan of described operational amplifier is described sensor, the second end of described the 5th electric capacity respectively with the negative pole of the light emitting diode of described infrared emission receptor, the emitter stage of the infrared reception audion of described infrared emission receptor, the second end of described the first electric capacity, the second end of described the 3rd resistance and the cathode voltage input of described operational amplifier are connected and ground connection.
2. Novel reflection-type photoelectricity pulse wave sensor according to claim 1, it is characterized in that: each electronic component of described sensor is all arranged on a circular circuit board, the diameter of described circular circuit board is 23mm, and remaining each electronic component is all arranged on the back side of described circuit board except described infrared emission receptor is arranged on the front of described circuit board.
3. Novel reflection-type photoelectricity pulse wave sensor according to claim 1, is characterized in that: the model of described operational amplifier is LMV321, the model of described infrared emission receptor is ITR8037.
4. according to the Novel reflection-type photoelectricity pulse wave sensor described in claim 1 or 3, it is characterized in that: the infrared light wavelength that described infrared emission receptor adopts is 940nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420172636.XU CN203815438U (en) | 2014-04-04 | 2014-04-04 | Novel reflection photoelectric pulse wave sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420172636.XU CN203815438U (en) | 2014-04-04 | 2014-04-04 | Novel reflection photoelectric pulse wave sensor |
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| Publication Number | Publication Date |
|---|---|
| CN203815438U true CN203815438U (en) | 2014-09-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420172636.XU Expired - Fee Related CN203815438U (en) | 2014-04-04 | 2014-04-04 | Novel reflection photoelectric pulse wave sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104825141A (en) * | 2015-05-18 | 2015-08-12 | 北京优瀚康中医药研究院 | Intelligent pulse diagnosis instrument |
| CN113514152A (en) * | 2021-06-18 | 2021-10-19 | 中国人民解放军国防科技大学 | Weak light signal detection system capable of identifying signal incoming direction |
-
2014
- 2014-04-04 CN CN201420172636.XU patent/CN203815438U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104825141A (en) * | 2015-05-18 | 2015-08-12 | 北京优瀚康中医药研究院 | Intelligent pulse diagnosis instrument |
| CN113514152A (en) * | 2021-06-18 | 2021-10-19 | 中国人民解放军国防科技大学 | Weak light signal detection system capable of identifying signal incoming direction |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140910 Termination date: 20160404 |