CN203800894U - Power amplifier based on radio frequency direct current feedback - Google Patents
Power amplifier based on radio frequency direct current feedback Download PDFInfo
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- CN203800894U CN203800894U CN201420222612.0U CN201420222612U CN203800894U CN 203800894 U CN203800894 U CN 203800894U CN 201420222612 U CN201420222612 U CN 201420222612U CN 203800894 U CN203800894 U CN 203800894U
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Abstract
The utility model provides a power amplifier based on radio frequency direct current feedback. The power amplifier comprises a power amplifying circuit, a sampling circuit, a direct current converting circuit and a bias circuit, wherein the input end of the power amplifying circuit receives an external radio frequency input signal through an input capacitor, performs power amplification on the same, and outputs a radio frequency output signal through the output end of the power amplifying circuit; the sampling circuit samples the output current of the power amplifying circuit to obtain sampling current; the direct current converting circuit converts the sampling current into direct current feedback current; the bias circuit comprises a bias current source for providing bias current and provides bias voltage for the input end of the power amplifying circuit on the basis of the direct current feedback current and the bias current. Due to the fact that a direct current feedback loop is built, the output current of the power amplifier is determined by loop gain and the bias current, the output power of the power amplifier can be controlled accurately, and influence of power voltage, temperature and process bias on the output power is low.
Description
[technical field]
The utility model relates to a kind of power amplifier, particularly relates to the power amplifier based on radio frequency DC feedback.
[background technology]
In Designing power amplifier; the effect of control circuit module provides the reference of system on the one hand; the requirement of system to power amplifier can be met on the other hand, such as the accurate control of power output, the various safeguard measures of some power amplifiers can also be provided.
In the prior art, the control circuit of power amplifier adopts low voltage difference voltage-regulation mode (LDO) conventionally.Fig. 3 is the circuit diagram of the power amplifier of controlling based on LDO of the prior art, as shown in Figure 3, described power amplifier comprises the first power amplifying transistor M11, the second power amplifying transistor M12, and the grid of described the first power amplifying transistor receives the radio-frequency input signals RF of input by input capacitance C11
iN, its grid also connects bias voltage by biasing resistor.Described power amplifier also comprises choke L11, controls transistor M13 and operational amplifier OP1, and the negative-phase input of described operational amplifier OP1 meets reference voltage V
rEFpositive input connects the drain electrode of described control transistor M13, the source electrode of described control transistor M13 connects power supply, described in the output termination of described operational amplifier OP1, control the grid of transistor M13, described choke L11 is connected between the drain electrode of described control transistor M13 and the drain electrode of the second power amplifying transistor M12.Control by operational amplifier OP1 to described control transistor M13, thus electric current is provided can to power amplifying transistor M11 and M12.The advantage of the method is the drain current that can track very accurately power amplifier, and shortcoming is also very obvious: the first, because the electric current of power amplifier is very large, the PMOS pipe M13 size of LDO is very large, and this just causes area very large, increases cost; The second, for making PMOS pipe M13 in saturation region, its leakage two ends, source must additionally consume certain voltage (being greater than the overdrive voltage between grid source), will reduce like this power output, reduce the efficiency of whole power amplifier simultaneously; Three, pass through V
rEFthe method dynamic range that power output is controlled in the drain electrode (or collector electrode) of power ratio control amplifier is relatively little, the situation of having relatively high expectations for dynamic range, and one-level control often cannot be satisfied the demand separately.
Therefore, be necessary to propose a kind of improved technical scheme and solve the problems referred to above.
[utility model content]
The purpose of this utility model is to provide a kind of power amplifier based on radio frequency DC feedback, and it can accurately be controlled the output current of power amplifier, power output, reduces the impact that voltage, temperature and process deviation bring.
To achieve these goals, the utility model proposes a kind of power amplifier based on radio frequency DC feedback, it comprises: power amplification circuit, its input receives the radio-frequency input signals of outside input by input capacitance, it carries out power amplification to radio-frequency input signals, and by its output output radio frequency output signal; Sample circuit, the output current of its described power amplification circuit of sampling obtains sample rate current; DC converting circuit, converts described sample rate current to DC feedback electric current; Biasing circuit, it comprises the bias current sources that bias current is provided, its input that is provided as described power amplification circuit based on DC feedback electric current and bias current provides bias voltage.
In a preferred embodiment, described power amplification circuit comprises the first power amplifying transistor, the grid of this first power amplifying transistor is the input of described the first power amplification circuit, described sample circuit comprises the first sampling transistor, the grid of this first sampling transistor is connected with the grid of described the first power amplifying transistor, described biasing circuit also comprises bias transistor, the grid of this bias transistor is connected with the grid of the first power amplifying transistor by biasing resistor, described bias current and described DC feedback electric current flow through grid that described bias transistor makes described bias transistor after merging provide described bias voltage for the grid of the first power amplifying transistor.
In a preferred embodiment, the source ground of the first power amplifying transistor, the source ground of the first sampling transistor, the source ground of described bias transistor, its grid is connected with its drain electrode, described bias current and described DC feedback electric current flow through the drain electrode of described bias transistor after merging, the grid of described bias transistor is connected with the grid of the first power amplifying transistor by described biasing resistor.
In a preferred embodiment, described power amplification circuit also comprises the second power amplifying transistor, the source electrode of the second power amplifying transistor is connected with the drain electrode of the first power amplifying transistor, the drain electrode of the second power amplifying transistor is connected with one end of choke induction, another termination power of described choke induction, the drain electrode of the second power amplifying transistor and the connected node of described choke induction are as the output of described power amplification circuit, described sample circuit also comprises the second sampling transistor, its grid connects the grid of the second power amplifying transistor, its source electrode connects the drain electrode of the first sampling transistor.
Compared with prior art, in the utility model, biasing circuit provides bias voltage based on bias current and DC feedback electric current to power amplification circuit, thereby set up radio frequency DC feedback, after loop is set up, no matter be quiescent operation or dynamic duty situation, average current in power amplifier is all only relevant with the bias current of loop gain and input, the impact that voltage, temperature and process deviation bring be can reduce so as far as possible, output current, the isoparametric accurate control of power output realized.
[brief description of the drawings]
In order to be illustrated more clearly in the technical scheme of the utility model embodiment, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.Wherein:
Fig. 1 is the power amplifier based on radio frequency DC feedback in the utility model circuit diagram in one embodiment;
Fig. 2 is the power amplifier based on radio frequency DC feedback in the utility model circuit diagram in a specific embodiment; With
Fig. 3 is the circuit diagram of the power amplifier of controlling based on LDO of the prior art.
[embodiment]
Detailed description of the present utility model is mainly carried out the running of direct or indirect simulation technical solutions of the utility model by program, step, logical block, process or other symbolistic descriptions.For the thorough the utility model of understanding, a lot of specific detail in ensuing description, are stated.And in the time there is no these specific detail, the utility model may still can be realized.Under those of skill in the art uses these descriptions herein and states the work essence of effectively introducing them to the others skilled in the art in affiliated field.In other words, be the purpose of this utility model of avoiding confusion, due to the method for knowing and easily understanding of program, therefore they are not described in detail.
Alleged " embodiment " or " embodiment " refers to special characteristic, structure or the characteristic that can be contained at least one implementation of the utility model herein.Different local in this manual " in one embodiment " that occur not all refer to same embodiment, neither be independent or the embodiment mutually exclusive with other embodiment optionally.
Fig. 1 is the power amplifier based on radio frequency DC feedback 100 in the utility model circuit diagram in one embodiment.As shown in Figure 1, power amplifier 100 comprises power amplification circuit 110, sample circuit 120, DC converting circuit 130 and biasing circuit 140.
The input of described power amplification circuit 110 receives the radio-frequency input signals RF of outside input by input capacitance C1
iN, it carries out power amplification to radio-frequency input signals, and by its output output radio frequency output signal RF
oUT.The sample output current of described power amplification circuit 110 of sample circuit 120 obtains sample rate current I
s, described sample rate current I
sproportional with the output current of power amplification circuit 110, i.e. described sample rate current I
ssize can directly react the size of the electric current of described power amplification circuit 110.DC converting circuit 130 is by described sample rate current I
sconvert DC feedback electric current I to
fB, this is because the electric current of described power amplification circuit 110 exists certain fluctuation, in order better to carry out negative feedback control, needs first to remove fluctuation in described sample rate current here to obtain direct current average current.
Biasing circuit 140 comprises provides bias current I
bbias current sources, it is based on DC feedback electric current I
fBwith bias current I
bfor the input of described power amplification circuit 110 provides bias voltage V
b.Subsequently, described power amplification circuit 110 is at bias voltage V
bdriving under, to the radio-frequency input signals RF of outside input
iNcarry out power amplification, so just set up DC feedback loop.
Compare traditional power amplifier control circuit based on low voltage difference voltage-regulation mode and have many improvement and advantage.
First,, after DC feedback loop is set up, the output current of power amplifier is by loop gain and bias current I
bdetermine, conventionally bias current I
bbe subject to supply voltage, temperature and process deviation less, therefore the output current of power amplifier can be point-device by loop-locking, thereby less with ectocine, note, no matter be quiescent operation or dynamic duty situation, the average current in power amplifier all only and the bias current I of loop gain and input
brelevant.
Secondly for the power output of linear power amplifier and the ideal relationship of output current be:
P
out＝I
1 2R，
Wherein I
1for the average current in power amplifier, R is load impedance, as long as accurately controlled the electric current of power amplifier, also just can control the power output of power amplifier.Due under feedback states, the electric current I of power amplifier
1with input bias current I
bfixed proportion relation, so power output and bias current I
balso be definite relation, and because loop exists, this relation change less with non-ideal factors such as temperature, technique, supply voltages.
The 3rd, according to the fixed relationship of the electric current described in Article 2 and power, if change I
bwith the curve form of certain parameter (such as GSM (Global System for Mobile Communications) Vramp signal), can obtain different input signals and the curve of power output, such as input reference signal is linear relationship, power output is exactly dB-linear relationship, passes through I thus
bmake various curve, can obtain respectively the various power curve such as linearity-linearity, linearity-index, linearity-logarithm.
The 4th, each radio frequency parameter of power amplifier is very responsive to load voltage standing-wave ratio (VSWR), different corresponding different power output, the voltage and currents of VSWR meeting, the integrity problem of power amplifier will be produced thus, in the situation that there is loop, the foundation of loop can be alleviated greatly on the impact of different VSWR.
Fig. 2 is the power amplifier based on radio frequency DC feedback in the utility model circuit diagram in a specific embodiment, and it has illustrated the particular circuit configurations of power amplification circuit 110, sample circuit 120, DC converting circuit 130 and biasing circuit 140.
As shown in Figure 2, described power amplification circuit 110 comprises the first power amplifying transistor M1, the second power amplifying transistor M2.The grid of this first power amplifying transistor M1 is that the input of described the first power amplification circuit is connected with described input capacitance C1, the source ground of the first power amplifying transistor M1.The source electrode of the second power amplifying transistor M2 is connected with the drain electrode of the first power amplifying transistor M1, the drain electrode of the second power amplifying transistor M2 is connected with one end of choke induction L1, another termination power end of described choke induction L1, the connected node of the drain electrode of the second power amplifying transistor M2 and described choke induction L1 is as the output of described power amplification circuit 110.Described power amplifying transistor is for the radio-frequency input signals RF to input
iNcarry out power amplification to obtain radio frequency output signal RF
oUT.
Described sample circuit 120 comprises the first sampling transistor M4 and the second sampling transistor M5.The grid of this first sampling transistor M4 is connected with the grid of described the first power amplifying transistor M1, the source ground of the first sampling transistor M4, the grid of the second sampling transistor M5 connects the grid of the second power amplifying transistor M2, its source electrode connects the drain electrode of the first sampling transistor M4, and the electric current flowing through in the drain electrode of described the second sampling transistor M5 is exactly described sample rate current I
s.Because the grid of transistor M1 and M4 is connected, source electrode is ground connection all, and the grid of transistor M2 and M5 is connected, and source electrode all connects the drain electrode of transistor M1 and M5, and therefore they form current mirror, that is to say, electric current (the sample rate current I flowing through on transistor M4 and M5
s) with transistor M1 and M2 on the proportional relation of electric current (output current) that flows through, realized like this sampling of output current.
Described DC converting circuit 130 comprises the first conversioning transistor M6, the second conversioning transistor M7, filter capacitor C2, filter resistance R2.The grid of the first conversioning transistor M6 is connected with the grid of the second conversioning transistor M7 by filter resistance R2, the source electrode of the first conversioning transistor M6 and the second conversioning transistor M7 all connects power end, and described filter capacitor C2 is connected between power end and the grid of the first conversioning transistor M6.The drain electrode output DC feedback electric current I of the first conversioning transistor M6
fB, the drain electrode of the second conversioning transistor M7 connects the drain electrode of the second sampling transistor M5 to receive described sample rate current I
s.Described filter capacitor C2, filter resistance R2 form filter circuit, can filtering described in sample rate current I
sfluctuation, the first conversioning transistor M6 and the second conversioning transistor M7 form current mirror, thus based on described sample rate current I
sobtain DC feedback electric current I
fB.
Described biasing circuit 140 also comprises bias current sources and bias transistor M3.The source ground of described bias transistor M3, its grid is connected with its drain electrode, and its grid is also connected with the grid of the first power amplifying transistor M1 by biasing resistor R1.Described bias current I
bwith described DC feedback electric current I
fBafter merging, flow through grid that described bias transistor M3 makes described bias transistor M3 and provide described bias voltage V for the grid of the first power amplifying transistor M1
b.
Described bias transistor M3 is connected with the grid of described the first amplifier transistor M1, and all ground connection of source electrode, and they form current mirror, that is to say that the electric current that flows through the electric current of bias transistor M3 and flow through the first amplifier transistor M1 is proportional.In the utility model, can be by changing or controlling bias current I
brealize the accurate control of the electric current (output current) to flowing through the first amplifier transistor M1, also realize the accurate control of the power output to power amplifier simultaneously.
Fig. 2 is the exemplary concrete example that provided, and in other embodiments, is not departing under the prerequisite of essence of the present utility model, can also adjust some circuit.In an embodiment that can select, a power amplifying transistor M1 also can be only set, remove power amplifying transistor M2, now, the drain electrode of M1 is using the output as power amplification circuit 110, corresponding, also needs to get rid of the second sampling transistor M5.In other embodiments, described power amplifying transistor can also not only include two, can also comprise the three or more of cascade, corresponding, also needs to arrange the sampling transistor of respective numbers.
In other embodiments, power amplifying transistor M1 and M2 also can adopt PMOS (P-channel Metal Oxide Semiconductor) transistor, accordingly, bias transistor M3, sampling transistor M4 and M5 also need to adopt PMOS transistor, with with power amplifying transistor M1 and the M2 formation mirror image circuit that matches, bias current sources also needs to be changed between the drain electrode and ground of bias transistor M3 simultaneously, and the bias current to ground is provided.
In a further embodiment, described DC converting circuit 130 also can be adjusted the circuit structure of self as required, as long as can be by described sample rate current I
sconvert DC feedback electric current I to
fB.
Above-mentioned explanation has fully disclosed embodiment of the present utility model.It is pointed out that and be familiar with the scope that any change that person skilled in art does embodiment of the present utility model does not all depart from claims of the present utility model.Correspondingly, the scope of claim of the present utility model is also not limited only to previous embodiment.
Claims (5)
1. the power amplifier based on radio frequency DC feedback, is characterized in that, it comprises:
Power amplification circuit, its input receives the radio-frequency input signals of outside input by input capacitance, radio-frequency input signals is carried out to power amplification, and by its output output radio frequency output signal;
Sample circuit, the output current of its described power amplification circuit of sampling obtains sample rate current;
DC converting circuit, converts described sample rate current to DC feedback electric current;
Biasing circuit, it comprises the bias current sources that bias current is provided, its input that is provided as described power amplification circuit based on DC feedback electric current and bias current provides bias voltage.
2. power amplifier according to claim 1, is characterized in that,
Described power amplification circuit comprises the first power amplifying transistor, and the grid of this first power amplifying transistor is the input of described the first power amplification circuit,
Described sample circuit comprises the first sampling transistor, and the grid of this first sampling transistor is connected with the grid of described the first power amplifying transistor,
Described biasing circuit also comprises bias transistor, the grid of this bias transistor is connected with the grid of the first power amplifying transistor by biasing resistor, and described bias current and described DC feedback electric current flow through grid that described bias transistor makes described bias transistor after merging provide described bias voltage for the grid of the first power amplifying transistor.
3. power amplifier according to claim 2, is characterized in that, the source ground of the first power amplifying transistor, and the source ground of the first sampling transistor,
The source ground of described bias transistor, its grid is connected with its drain electrode, described bias current and described DC feedback electric current flow through the drain electrode of described bias transistor after merging, the grid of described bias transistor is connected with the grid of the first power amplifying transistor by described biasing resistor.
4. power amplifier according to claim 3, it is characterized in that, described power amplification circuit also comprises the second power amplifying transistor, the source electrode of the second power amplifying transistor is connected with the drain electrode of the first power amplifying transistor, the drain electrode of the second power amplifying transistor is connected with one end of choke induction, another termination power end of described choke induction, the drain electrode of the second power amplifying transistor and the connected node of described choke induction are as the output of described power amplification circuit
Described sample circuit also comprises the second sampling transistor, and its grid connects the grid of the second power amplifying transistor, and its source electrode connects the drain electrode of the first sampling transistor.
5. power amplifier according to claim 3, is characterized in that, described DC converting circuit comprises the first conversioning transistor, the second conversioning transistor, filter capacitor, filter resistance,
The grid of the first conversioning transistor is connected with the grid of the second conversioning transistor by filter resistance, and the source electrode of the first conversioning transistor and the second conversioning transistor all connects power end, and described filter capacitor is connected between power end and the grid of the first conversioning transistor,
The drain electrode output DC feedback electric current of the first conversioning transistor, the drain electrode of the second conversioning transistor connects the drain electrode of the second sampling transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420222612.0U CN203800894U (en) | 2014-04-30 | 2014-04-30 | Power amplifier based on radio frequency direct current feedback |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420222612.0U CN203800894U (en) | 2014-04-30 | 2014-04-30 | Power amplifier based on radio frequency direct current feedback |
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| Publication Number | Publication Date |
|---|---|
| CN203800894U true CN203800894U (en) | 2014-08-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420222612.0U Expired - Lifetime CN203800894U (en) | 2014-04-30 | 2014-04-30 | Power amplifier based on radio frequency direct current feedback |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103986425A (en) * | 2014-04-30 | 2014-08-13 | 无锡中普微电子有限公司 | Power amplifier based on radio-frequency direct current feedback |
| CN109495078A (en) * | 2019-01-14 | 2019-03-19 | 上海艾为电子技术股份有限公司 | A kind of reference voltage generating circuit and Switching Power Supply |
-
2014
- 2014-04-30 CN CN201420222612.0U patent/CN203800894U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103986425A (en) * | 2014-04-30 | 2014-08-13 | 无锡中普微电子有限公司 | Power amplifier based on radio-frequency direct current feedback |
| CN109495078A (en) * | 2019-01-14 | 2019-03-19 | 上海艾为电子技术股份有限公司 | A kind of reference voltage generating circuit and Switching Power Supply |
| CN109495078B (en) * | 2019-01-14 | 2023-09-08 | 上海艾为电子技术股份有限公司 | Reference voltage generating circuit and switching power supply |
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| GR01 | Patent grant | ||
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| CX01 | Expiry of patent term |
Granted publication date: 20140827 |