CN203786430U - Substrate - Google Patents
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- CN203786430U CN203786430U CN201320860513.0U CN201320860513U CN203786430U CN 203786430 U CN203786430 U CN 203786430U CN 201320860513 U CN201320860513 U CN 201320860513U CN 203786430 U CN203786430 U CN 203786430U
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- Prior art keywords
- substrate
- icon indicia
- reverse
- tft switch
- indicia
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- 239000000758 substrate Substances 0.000 title claims abstract description 141
- 230000004888 barrier function Effects 0.000 claims description 27
- 230000000452 restraining effect Effects 0.000 claims description 27
- 238000002955 isolation Methods 0.000 claims description 9
- 239000003550 marker Substances 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- Liquid Crystal (AREA)
Abstract
The utility model relates to the field of displays, in particular to a substrate. The substrate comprises a transparent substrate body and a plurality of signal lines formed on the substrate body, and further comprises a plurality of marks located on the substrate body, wherein the marks correspond to the signal lines one to one and are used for marking the corresponding signal lines, and according to at least two adjacent marks, one mark is a mark with a forward pattern, and the other mark is a mark with a reverse pattern. According to the substrate, the problem that when the marks of the signal lines in the substrate are read, the marks can be easily read wrong can be solved.
Description
Technical field
The utility model relates to field of display, is specifically related to a kind of substrate.
Background technology
Substrate in display device is provided with signal wire on conventionally, for example, on the Thin Film Transistor (TFT) in liquid crystal indicator (Thin Film Transistor, TFT) array base palte, be provided with data line and sweep trace.Conventionally need to be signal wire for the signal wire mark mark on substrate and be numbered with digital number, to signal wire is carried out to identification in the generative process of liquid crystal indicator and accurately locate each pixel in successive projects detects.
Fig. 1 is the schematic top plan view of mark on substrate in prior art.As shown in Figure 1, substrate comprises transparent substrates, be formed on many signal line 10 on substrate and with many signal line 10 a plurality of marks 11 of corresponding setting one by one, example digital number " 1233 ", " 1234 ", " 1235 " and " 1236 " as shown in FIG., for identifying corresponding signal wire.
Fig. 2 and Fig. 3 show respectively substrate when array engineering is made when becoming box engineering to make the schematic diagram of mark on substrate.The digital number " 1235 " of take in mark 11 is example, with reference to figure 2, at substrate, when array engineering is made, substrate is placed as the mark that makes on it upward, and what when human eye is observed digital number " 1235 " from top to bottom, see is forward icon indicia " 1235 ", yet, with reference to figure 3, at substrate, when becoming box engineering to make, substrate is upside down placement, mark on it down, when human eye is observed digital number " 1235 " from top to bottom, see be reverse icon indicia "
",, when substrate is when becoming box engineering, the mark 11 that human eye is seen is the figures that turn upside down and arrange, this has caused the identification difficulty to mark, and then the identification of impact to signal wire corresponding to this mark.As " 1233 ", " 1234 " and " 1236 " and each self-corresponding signal wire also identical difficulty when the identification, easily there is identification mistake, and then make mistakes in other marks in the prior art of Fig. 1 on substrate.
Utility model content
In view of this, the utility model embodiment proposes a kind of substrate, and the problem easily making a mistake while solving the mark that reads signal wire in substrate improves the relevant work efficiency of substrate.
The utility model embodiment discloses a kind of substrate, comprise transparent substrates and be formed on the many signal line on described substrate, wherein, described substrate also comprises a plurality of marks that are positioned on described substrate, described a plurality of mark is corresponding one by one with described many signal line respectively, for identifying corresponding signal wire, wherein at least comprise that in adjacent two marks is forward icon indicia, another is reverse icon indicia.
Preferably, described mark carries out mark to described signal wire from big to small, or from small to large described signal wire is carried out to mark.
Preferably, described substrate also comprise be arranged on described forward icon indicia below and with the positive stop layer of described forward icon indicia electrical isolation and be arranged on described reverse icon indicia top and with the reverse restraining barrier of described reverse pattern electroactive marker insulation, wherein, described positive stop layer is for when observing from first direction, described forward icon indicia being stopped, described reverse restraining barrier stops described reverse icon indicia while observing for the second direction when from contrary with first direction.
Preferably, described forward icon indicia and/or oppositely pattern are labeled as metal, and described positive stop layer and/or described reverse restraining barrier are metal level.
Preferably, described forward icon indicia and described reverse pattern mark are positioned at same layer or different layers.
Preferably, described substrate is tft array substrate, and grid or the source-drain electrode of described forward icon indicia and described reverse icon indicia and described TFT switch are positioned at same layer.
Preferably, described substrate is tft array substrate, TFT switch in described tft array substrate is bottom grating structure, the source-drain electrode of described forward icon indicia and described reverse icon indicia and described TFT switch is formed on same layer, the grid of described positive stop layer and described TFT switch is formed on same layer, described reverse restraining barrier is formed on described reverse icon indicia top, and insulate with described reverse pattern electroactive marker.
Preferably, described substrate is tft array substrate, TFT switch in described tft array substrate is bottom grating structure, the source-drain electrode of described forward icon indicia and described reverse restraining barrier and described TFT switch is formed at same layer, and the grid of described positive stop layer and described reverse icon indicia and described TFT switch is formed on same layer.
Preferably, described substrate is tft array substrate, TFT switch in described tft array substrate is top gate structure, described forward icon indicia and described reverse icon indicia are formed in the one deck far away of substrate described in grid described in described TFT switch and described source-drain electrode middle distance, and described positive stop layer is formed in the nearer one deck of substrate described in grid described in described TFT switch and described source-drain electrode middle distance, described reverse restraining barrier is formed on described reverse icon indicia top, and insulate with described reverse pattern electroactive marker.
Preferably, described substrate is tft array substrate, TFT switch in described tft array substrate is top gate structure, described forward icon indicia and described reverse restraining barrier are formed in the one deck far away of substrate described in grid described in described TFT switch and described source-drain electrode middle distance, and described positive stop layer and described reverse icon indicia are formed in the nearer one deck of substrate described in grid described in described TFT switch and described source-drain electrode middle distance.
On the utility model embodiment substrate, the correspondence position of signal wire comprises forward icon indicia and reverse icon indicia, and human eye is observed from top to bottom and can be seen forward icon indicia clearly, thereby can pass through forward icon indicia identification signal line.When substrate is reversed placement, human eye is observed from top to bottom and can be seen reverse icon indicia clearly, thereby can be by reverse pattern mark identification signal wire.Therefore, when no matter substrate still becomes box engineering to make when array engineering is made, can be by means of forward icon indicia or reverse indicia patterns identification signal line clearly, thus increase work efficiency and accuracy rate.
Accompanying drawing explanation
Fig. 1 is the schematic top plan view of mark on substrate in prior art;
Fig. 2 is substrate schematic diagram of mark on substrate when array engineering is made;
Fig. 3 is substrate schematic diagram of mark on substrate while becoming box engineering to make;
Fig. 4 is the schematic top plan view of the substrate of the utility model one embodiment;
Fig. 5 is the schematic side view of the substrate of the utility model one embodiment;
Fig. 6 is the mark schematic diagram of the substrate of the utility model one embodiment;
Fig. 7 is the schematic diagram of the substrate of the utility model one embodiment;
Fig. 8 is the mark schematic diagram of the bottom grating structure tft array substrate of the utility model one embodiment;
Fig. 9 is the mark schematic diagram of the bottom grating structure tft array substrate of the utility model one embodiment.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.Be understandable that, specific embodiment described herein is only for explaining the utility model, but not to restriction of the present utility model.It also should be noted that, for convenience of description, in accompanying drawing, only show the part relevant to the utility model but not all.
Fig. 4 and Fig. 5 show respectively schematic top plan view and the schematic side view of mark on the substrate of the utility model one embodiment.As shown in Figure 4, the substrate of the present embodiment comprises transparent substrates and is formed on the many signal line 10 on described substrate, also comprise a plurality of marks 111 and 112 that are positioned on described substrate, described a plurality of mark is corresponding one by one with described many signal line respectively, for identifying corresponding signal wire, wherein, at least comprise that one in adjacent two marks is forward icon indicia 111, for example " 1233 " and " 1235 ", another is reverse icon indicia 112, for example "
" and "
".It should be noted that, here corresponding one by one, refers to that each root signal wire 10 all can mark with a digital number, corresponding one by one between digital number and signal wire.
At substrate when array engineering is made, human eye observe from top to bottom digital number " 1233 ", "
", " 1235 " and "
" time the figure seen be followed successively by " 1233 ", "
", " 1235 " and "
", now can know the forward icon indicia 111 (comprising " 1233 " and " 1235 ") of identification signal line.Accordingly, at substrate, when becoming box engineering to make, substrate is reversed placement, human eye observe from top to bottom " 1233 ", "
", " 1235 " and "
" time the figure seen be followed successively by "
", " 1234 ", "
" and " 1236 ", now can know the reverse icon indicia 112 (comprising " 1234 " and " 1236 ") of identification signal line.Therefore, in the present embodiment owing to both having comprised forward icon indicia and reverse icon indicia in mark, no matter substrate is when array engineering is made or when becoming box engineering to make, all can pass through forward icon indicia or the reverse correct identification signal line of icon indicia, thereby avoid the wrong problem causing of identification.
The signature that note that Fig. 4 is a kind of example, is figure notation.In addition, described mark can be also letter, character and digit etc., and the concrete form to mark in the present embodiment is not construed as limiting, so long as can for the mark of identifying.Further, shown in Fig. 4 for corresponding to from small to large described signal wire is carried out the situation of mark by left-to-right described mark, described mark also can carry out mark to described signal wire from big to small.When substrate is carried out to associative operation, the mark being arranged in order by from big to small or from small to large can obtain the digital number that can not clearly read according to the clear digital number reading, thereby each on identification substrate identifies corresponding signal wire.For example, as shown in Figure 4, substrate is made and when human eye observes from top to bottom in array engineering, can clear read signal line 101 and the corresponding digital number of signal wire 103 be respectively " 1233 " and " 1235 ".Because digital number in this example is from left to right for arranging from small to large, can know that the digital number of signal wire 102 and signal wire 104 is followed successively by " 1234 " and " 1236 " according to signal wire 101 and the corresponding digital number of signal wire 103.Certainly, under particular case, also can to marking the rule of these marks, define in the mode of a kind of agreement or agreement, in practical operation, according to the rule of this kind of definition or agreement, mark, at this, also do not limit.
Fig. 6 is the mark schematic diagram of the substrate that provides of the utility model the present embodiment.Note that the signature in Fig. 6 is only a kind of example, and in Fig. 6, omitted signal wire.Wherein, described forward icon indicia 111 and described reverse icon indicia 112 can be positioned at the same layer of described substrate, when described substrate is TFT substrate, and the grid layer 13 of the TFT switch that is arranged in described tft array substrate that can be concrete.It should be noted that, described forward icon indicia 111 in the present embodiment and described reverse icon indicia 112 can also be positioned at same layer with the source-drain electrode 14 of TFT switch.When substrate is tft array substrate, described signal wire can be data line or sweep trace, on substrate, forward icon indicia 111 comprises forward data wire tag or forward scan wire tag, and oppositely icon indicia 112 comprises reverse data wire tag or reverse scan wire tag.As previously mentioned, when forward icon indicia 111 with when oppositely icon indicia 112 is positioned on described tft array substrate same layer, preferably, they can be positioned at same layer with grid or the source-drain electrode of described TFT switch, thereby can when forming the grid of TFT switch or source-drain electrode, form forward icon indicia 111 and reverse icon indicia 112, to simplify processing step.It should be noted that, in Fig. 6, only using the TFT of bottom grating structure as example, but should not be limited with Fig. 6.When in the present embodiment, forward icon indicia 111 and reverse icon indicia 112 are positioned at the same layer of tft array substrate, also can be positioned on other layer of the layer that is different from grid and source-drain electrode place.
In addition, in the present embodiment, forward icon indicia 111 and reverse icon indicia 112 also can be positioned at the different layers of described substrate, for example, when described substrate is tft array substrate, described forward icon indicia 111 forms with the grid of described TFT switch simultaneously, also be positioned at same layer with described grid, described reverse icon indicia 112 forms with the source-drain electrode of described TFT switch simultaneously, is also positioned at same layer with described source-drain electrode.In addition optional, forward icon indicia 111 and oppositely icon indicia 112 also can be respectively formed in other different layers of the layer that is different from grid and source-drain electrode place.Optionally, described forward icon indicia 111 and described reverse icon indicia 112 are metal material.
Fig. 7 is the schematic diagram of the substrate of the utility model one embodiment.Described substrate also comprise be arranged on described forward icon indicia 111 belows and with the positive stop layer 113 of described forward icon indicia 111 electrical isolations and be arranged on described reverse icon indicia 112 tops and with the reverse restraining barrier 114 of described reverse icon indicia 112 electrical isolations, described positive stop layer 113 and/or described reverse restraining barrier 114 can be preferably metal level.Positive stop layer 113 is for when human eye is observed from first direction, be that human eye is when observe from bottom to top, described forward icon indicia 111 is stopped, thereby can not see forward icon indicia 111, but can identification clear reverse icon indicia 112, makes it possible to by reverse icon indicia 112 identification signal line correctly and clearly.When described reverse restraining barrier 114 is observed for the second direction when from contrary with first direction, be that human eye is when observe from top to bottom, described reverse icon indicia 112 is stopped, thereby can not see reverse icon indicia 112, but identification forward icon indicia 111 clearly.It should be noted that, no matter which layer described forward icon indicia 111 and described reverse icon indicia 112 are specifically positioned in the utility model embodiment, positive stop layer 113 need to be positioned at the below of described forward icon indicia 111, and described reverse restraining barrier 114 need to be positioned at the top of described reverse icon indicia 112.
Fig. 8 is the mark schematic diagram of the bottom grating structure tft array substrate of the present embodiment.Described substrate 12 is tft array substrate, and in described tft array substrate, TFT switch has grid layer 13 and source-drain electrode layer 14, and because described TFT switch is bottom grating structure, described grid layer 13 is positioned at the below of described source-drain electrode layer 14.When forward icon indicia 111 is positioned at same layer with reverse icon indicia 112, because positive stop layer 113 need to be positioned at the below of described forward icon indicia 111, oppositely restraining barrier 114 need to be positioned at the top of described reverse icon indicia 112, optionally, described forward icon indicia 111 and described reverse icon indicia 112 are formed on same layer with the source-drain electrode 14 of described TFT switch, described positive stop layer 113 is formed on same layer with the grid 13 of described TFT switch, and positive stop layer 113 need to grid (not shown) electrical isolation.Described reverse restraining barrier 114 is formed on described reverse icon indicia 112 tops, and with described reverse icon indicia 112 electrical isolations.In Fig. 8, all with each insulation course, carry out electrical isolation.Optionally, positive stop layer 113 and reverse restraining barrier 114 are metal level.In addition, the number of the described forward icon indicia on described tft array substrate and described reverse icon indicia can be consistent with the number of the signal wire being labeled in described tft array substrate.
Certainly, described forward icon indicia 111 and described reverse icon indicia 112 can be positioned at different layers in described tft array substrate.As shown in Figure 9, optionally, the source-drain electrode 14 of described forward icon indicia 111 and described reverse restraining barrier 114 and described TFT switch is formed at same layer (needing electrical isolation between three), and the grid (not shown in Fig. 9) of described positive stop layer 113 and described reverse icon indicia 112 and described TFT switch is formed on same layer (needing electrical isolation between three).Because described forward icon indicia 111, described reverse icon indicia 112, described positive stop layer 113 and described reverse restraining barrier 114 all can form with source-drain electrode (not shown in Fig. 9) or the grid (not shown in Fig. 9) of described TFT switch respectively simultaneously, make effectively to simplify industrial step.
Optionally, described TFT switch is top gate structure.The TFT switch of top gate structure has two kinds of structures, and a kind of is the below that grid layer is positioned at source-drain electrode layer, is a kind ofly positioned at the top of source-drain electrode layer for grid layer.When forward icon indicia is positioned at same layer with reverse pattern mark, optionally, they are formed in described TFT switch in the one deck far away of substrate described in grid and source-drain electrode middle distance, and described positive stop layer is formed in the nearer one deck of substrate described in grid described in described TFT switch and described source-drain electrode middle distance, described reverse restraining barrier is formed on described reverse icon indicia top, and insulate with described reverse pattern electroactive marker.
Optionally, when described TFT switch is top gate structure, and when forward icon indicia and reverse icon indicia are also positioned at different layers, described forward icon indicia and described reverse restraining barrier are formed in the one deck far away of substrate described in grid described in described TFT switch and described source-drain electrode middle distance, and described positive stop layer and described reverse icon indicia are formed in the nearer one deck of substrate described in grid described in described TFT switch and described source-drain electrode middle distance.
Described forward icon indicia in the present embodiment and described reverse icon indicia are respectively used to the signal wire from second direction and the correct identification substrate of first direction.When described positive stop layer and described reverse restraining barrier are respectively used to from first direction or second direction observation, stop described forward icon indicia and described reverse icon indicia.When described substrate is tft array substrate and in described tft array substrate, the structure of TFT switch is different, for data line or sweep trace on described substrate are effectively identified, work as respectively, described forward icon indicia, described reverse icon indicia, described positive stop layer and described reverse restraining barrier are positioned at different positions, thereby make it possible to clear described forward icon indicia and the described reverse icon indicia of reading, with identification signal line.
Note, above are only preferred embodiment of the present utility model and institute's application technology principle.Skilled person in the art will appreciate that the utility model is not limited to specific embodiment described here, can carry out for a person skilled in the art various obvious variations, readjust and substitute and can not depart from protection domain of the present utility model.Therefore, although the utility model is described in further detail by above embodiment, but the utility model is not limited only to above embodiment, in the situation that not departing from the utility model design, can also comprise more other equivalent embodiment, and scope of the present utility model is determined by appended claim scope.
Claims (10)
1. a substrate, comprises transparent substrates and is formed on the many signal line on described substrate, it is characterized in that,
Described substrate also comprises a plurality of marks that are positioned on described substrate, described a plurality of mark is corresponding one by one with described many signal line respectively, for identifying corresponding signal wire, wherein at least comprise that in adjacent two marks is forward icon indicia, another is reverse icon indicia.
2. substrate according to claim 1, is characterized in that,
Described mark carries out mark to described signal wire from big to small, or from small to large described signal wire is carried out to mark.
3. substrate according to claim 1, is characterized in that,
Described substrate also comprise be arranged on described forward icon indicia below and with the positive stop layer of described forward icon indicia electrical isolation and be arranged on described reverse icon indicia top and with the reverse restraining barrier of described reverse pattern electroactive marker insulation,
Wherein, described positive stop layer is for when observing from first direction, described forward icon indicia being stopped, described reverse restraining barrier stops described reverse icon indicia while observing for the second direction when from contrary with first direction.
4. substrate according to claim 3, is characterized in that,
Described forward icon indicia and/or oppositely pattern are labeled as metal, and described positive stop layer and/or described reverse restraining barrier are metal level.
5. substrate according to claim 1 and 2, is characterized in that,
Described forward icon indicia and described reverse pattern mark are positioned at same layer or different layers.
6. substrate according to claim 5, described substrate is tft array substrate, grid or the source-drain electrode of described forward icon indicia and described reverse icon indicia and described TFT switch are positioned at same layer.
7. substrate according to claim 3, is characterized in that,
Described substrate is tft array substrate, TFT switch in described tft array substrate is bottom grating structure, the source-drain electrode of described forward icon indicia and described reverse icon indicia and described TFT switch is formed on same layer, the grid of described positive stop layer and described TFT switch is formed on same layer, described reverse restraining barrier is formed on described reverse icon indicia top, and insulate with described reverse pattern electroactive marker.
8. substrate according to claim 3, is characterized in that,
Described substrate is tft array substrate, TFT switch in described tft array substrate is bottom grating structure, the source-drain electrode of described forward icon indicia and described reverse restraining barrier and described TFT switch is formed at same layer, and the grid of described positive stop layer and described reverse icon indicia and described TFT switch is formed on same layer.
9. substrate according to claim 3, is characterized in that,
Described substrate is tft array substrate, TFT switch in described tft array substrate is top gate structure, described forward icon indicia and described reverse icon indicia are formed in described TFT switch in the one deck far away of substrate described in grid and source-drain electrode middle distance, and described positive stop layer is formed in the nearer one deck of substrate described in grid described in described TFT switch and described source-drain electrode middle distance, described reverse restraining barrier is formed on described reverse icon indicia top, and insulate with described reverse pattern electroactive marker.
10. substrate according to claim 3, is characterized in that,
Described substrate is tft array substrate, TFT switch in described tft array substrate is top gate structure, described forward icon indicia and described reverse restraining barrier are formed in described TFT switch in the one deck far away of substrate described in grid and source-drain electrode middle distance, and described positive stop layer and described reverse icon indicia are formed in the nearer one deck of substrate described in grid described in described TFT switch and described source-drain electrode middle distance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320860513.0U CN203786430U (en) | 2013-12-24 | 2013-12-24 | Substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320860513.0U CN203786430U (en) | 2013-12-24 | 2013-12-24 | Substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203786430U true CN203786430U (en) | 2014-08-20 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320860513.0U Expired - Lifetime CN203786430U (en) | 2013-12-24 | 2013-12-24 | Substrate |
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|---|---|
| CN (1) | CN203786430U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103926716A (en) * | 2013-12-24 | 2014-07-16 | 上海天马微电子有限公司 | Substrate and substrate signal line labeling method |
-
2013
- 2013-12-24 CN CN201320860513.0U patent/CN203786430U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103926716A (en) * | 2013-12-24 | 2014-07-16 | 上海天马微电子有限公司 | Substrate and substrate signal line labeling method |
| US9852996B2 (en) | 2013-12-24 | 2017-12-26 | Shanghai Tianma Micro-electronics Co., Ltd. | Substrate and method for labeling signal lines thereof |
| CN103926716B (en) * | 2013-12-24 | 2018-01-09 | 上海天马微电子有限公司 | A kind of mask method of substrate and its signal wire |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
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Granted publication date: 20140820 |
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| CX01 | Expiry of patent term |