CN203760675U - Dual polarized slot antenna based on SIW technology - Google Patents
Dual polarized slot antenna based on SIW technology Download PDFInfo
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- CN203760675U CN203760675U CN201420135547.8U CN201420135547U CN203760675U CN 203760675 U CN203760675 U CN 203760675U CN 201420135547 U CN201420135547 U CN 201420135547U CN 203760675 U CN203760675 U CN 203760675U
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- via hole
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- slot antenna
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Abstract
The utility model discloses a dual polarized slot antenna based on SIW technology, which adopts SIW technology and combines the advantages of a dual polarized antenna and a slot antenna. Based on the SIW technology, the copper covering layer at the top of the dielectric layer is provided with a rectangular-ambulatory-plane shaped slot. By adjusting the width of the rectangular-ambulatory-plane shaped slot, the frequency can be adjusted as a desired frequency for manufacturing the dual polarized slot antenna and combining an antenna with interacted a positive 45-degree and negative 45-degree dual polar and at the same time, the antenna is provided with a reception and emission function. With the adoption of coupling feed, signals are emitted to the upper part of an antenna through the copper covering layer at the bottom of a media layer. The dual polarized slot antenna combines SIW technology and combines the advantages of a dual polarized antenna and a slot antenna. Based on the SIW technology, the antenna of the kind is plane and small in size, which integrates an antenna with circuits.
Description
Technical field
The utility model relates to mobile communication technology field, relates in particular to a kind of dual polarization slot antenna based on SIW technology.
Background technology
Antenna is one of key equipment in mobile communications network, is the gateway of wireless signal.If main equipment is likened into the brain of mobile communication system, antenna just can be likened into face, eyes or ear so.The quality of antenna quality directly determines the quality of coverage effect and the user awareness of mobile communications network.Therefore, antenna has vital effect for the quality of mobile communication, if antenna quality is bad, even if main equipment quality is good again, network performance also cannot be embodied.
Due to product price guiding for a long time, moving communicating field is more and more lower for the investment proportion of antenna.At present, the proportion shared in whole mobile communications network of making an investment in of antenna is no more than 3%.With price factor, take as the leading factor excessively, cause antenna manufacturer in order to get a profit and to survive, more reduce the concern for antenna material, technique, global reliability and stability, the drawback of bringing thus manifests gradually.
In practical application, find, using, the antenna performance of initial stage significant proportion is good, can meet preferably network coverage demand, but applies after a period of time at net, and Antenna reliability reduction causes performance no longer to meet the requirement of the network coverage.This cost just because of antenna causes antenna quality to decline, and cannot externally in environment, apply for a long time.The quality of antenna causes mobile communications network website failure rate to improve gradually, closes the loss that keep in repair at station or replacing equipment brings and even surpasses the investment saving that antenna cost declines and brings.Therefore, pay attention to and conscientiously solve the variety of issue that antenna quality declines and brings, guiding supplier produces the antenna that meets operator's practical application request, promote antenna quality to meet network coverage efficiency and effect, improve stability and the reliability of the network coverage, promoting the benign development of antenna industry, is the responsibility of whole industrial circle, is also the inevitable requirement of Mobile Communication Development.
The polarization of antenna refers to the orientation of electric field intensity in the radiation direction of antenna maximum, is the key character of logo antenna.Dual polarized antenna can be launched two kinds of signals in same bandwidth, i.e. the electromagnetic wave of transmitting simultaneously or two orthogonal polarizations of acceptance.And be operated under transmission duplex pattern, so its most outstanding advantage is to save the antenna amount of single directional base station simultaneously.The directional base station (three sectors) of general GSM digital mobile communication network will be used 9 antennas, and 3 antennas of each fan-shaped use (space diversity, one two receipts), if use dual polarized antenna, 1 antenna of each fan-shaped needs; Simultaneously due in dual polarized antenna, the polarization orthogonal of ± 45 ° can guarantee+isolation between 45 ° and-45 ° of two slave antennas meets intermodulation to the requirement of isolation between antennas (>=30dB), so the space interval between dual polarized antenna only needs 20～30cm; In addition, dual polarized antenna has advantages of electrical tilt antenna, uses dual polarized antenna the same with electrical tilt antenna in mobile radio communication, can reduce call loss, reduces to disturb, and improves the service quality of the whole network.If use dual polarized antenna, because dual polarized antenna is not high to setting up installation requirement, do not need expropriation of land to build tower, the iron prop that only needs a diameter 20cm of frame, dual polarized antenna is fixed on iron prop by corresponding coverage direction, thereby saving capital expenditure makes station layout more reasonable simultaneously, and the selected of site, base station is more prone to.
Due to the distinctive advantage of dual polarized antenna, can receive whole polarization informations in electromagnetic wave, there is strong anti-interference, improve system sensitivity and can form the abilities such as polarization system, cause people's broad interest, in the systems such as collision prevention of vehicle, electronics detective, electronic countermeasures, radio proximity detecting and radar surveying, can apply, have very great meaning.
And along with the high speed development of modern microwave millimetre-wave circuit system, its function becomes increasingly complex, electrical performance indexes is more and more higher, its volume is more and more less simultaneously, weight is more and more lighter; Whole system is rapidly to miniaturization, lightweight, high reliability, multifunctionality and low-cost future development.The microwave and millimeter wave technology of low cost, high-performance, high finished product rate is very crucial for the business-like low-cost microwave and millimeter wave broadband system of exploitation.Therefore, in the urgent need to developing new microwave and millimeter wave integrated technology.
Substrate integration wave-guide (Substrate Integrated Waveguide, SIW) technology is that proposed in recent years a kind of can be integrated in and have the new guided wave structure formed of the characteristics such as filter with low insertion loss, low radiation, high power capacity in dielectric substrate, it can realize passive and active integrated effectively, make the miniaturization of microwave and millimeter wave system, even whole microwave and millimeter wave system can be produced in an encapsulation; And it has and the similar transmission characteristic of traditional rectangular metal waveguide, it can be used for forming the waveguide device of various ways, simultaneously owing to having, processing cost is low, machining accuracy is compared with the radiation loss high, volume is little, lightweight, lower, stronger anti-interference and the higher features such as integrated level for substrate integration wave-guide, and it can be used for designing the microwave and millimeter wave system of high integration.Therefore the microwave and millimeter wave consisting of it is submillimeter wave parts and subsystem has high Q value, high power holds electric even, easily and the advantage such as other planar circuit and integrated chip, the plated-through hole array being entirely on dielectric substrate due to total forms simultaneously, so this structure can be utilized common PCB technique, LTCC technique, even thin film circuit technique accurately realizes.Compare with the processing cost of traditional waveguide form microwave and millimeter wave device, the processing cost of substrate integration wave-guide microwave and millimeter wave device is very cheap, does not need anything post debugging work, is applicable to very much Integrated design and in enormous quantities making of microwave and millimeter wave circuit.
Utility model content
For the deficiencies in the prior art, the utility model proposes a kind of dual polarization slot antenna based on SIW technology.
A kind of dual polarization slot antenna based on SIW technology, comprise the substrate with via hole, described substrate comprises dielectric layer, be positioned at first of dielectric layer end face covers copper layer and is positioned at second of dielectric layer bottom surface and cover copper layer, described first covers copper layer is provided with gap, and described second covers copper layer is provided with feed end;
Described gap is coiled into rectangle, and via hole is divided into two groups and be in respectively the inside and outside both sides of described rectangle;
Described feed end is that rectangle covers copper sheet, and described feed end is 2, and quadrature is arranged in dielectric layer bottom;
First group of via hole is coiled into corner cut rectangle, and is positioned at the inside of the rectangle that gap is coiled into, and two bights of this corner cut rectangle homonymy are hypotenuse, and described hypotenuse is vertical with one group of opposite side of corresponding feed end respectively;
Second group of via hole is coiled into open rectangular, and is positioned at the outside of the rectangle that gap is coiled into, the corresponding hypotenuse in position that two bights of this open rectangular homonymy are open area and each open area;
Second group of via hole extends and arranges to substrate edges perpendicular to corresponding hypotenuse direction on edge, open area place.
The corresponding feed end of each hypotenuse is interpreted as from structure, with this hypotenuse nearest feed end on geometric position.
Vias inside is sunk copper, runs through dielectric layer and covers copper layer and second by first and cover the conducting of copper layer.The wall that is equivalent to common waveguide when via hole continuous distribution, microwave signal is inside transmitted and can not be revealed.The utility model is provided with two groups, both sides inside and outside the rectangle being coiled in gap respectively, form two metallic walls, together with covering copper with the metal of top (first covers copper layer) and bottom (second covers copper layer), form waveguide, be substrate integration wave-guide (Substrate Integrated Waveguide, SIW).Concerning microwave signal, can only be in the internal transmission of substrate integration wave-guide and cannot leak out, when slot on waveguide top (being gap), and the size of groove (being the length in gap) approaches the wavelength of the microwave of transmission, while meeting condition of resonance, inner signal will radiate from gap formation antenna.
Feed end in the utility model is that the feed that is positioned at dielectric layer bottom covers copper sheet, and first of feed end and dielectric layer top layer covers copper layer and form microstrip line, feed end connecting signal source, and first covers copper layer open circuit (not connecting with any Metal Phase).During work, microwave signal, from feed end input feed microstrip line, is led (being substrate integration wave-guide) by coupling microwave signal transmission afferent echo, then by gap, microwave signal is radiate.Due to whole antenna structure full symmetric, by the feed end of two internal structure symmetries is set, formed dual polarized antenna.
The utility model combines each advantage of SIW technology, dual polarized antenna, slot antenna, take SIW technology as basis, at the top of dielectric layer, cover and on copper layer, increased " going back to " shape gap, by regulating the size (being the girth of described rectangle) in " returning " shape gap to regulate the resonance frequency in gap, make it to be operated in desired frequency.By the perpendicular coupling feeding network in bottom, realized dual polarization mode of operation.
For preventing that feed end and second from covering the short circuit of copper layer, two annulars that described dielectric layer bottom surface is provided with rectangle are not covered copper region, and this wide (minor face) that does not cover copper region overlaps with hypotenuse respectively, and length equals the length of this hypotenuse.Described rectangle covers copper sheet and is arranged at annular not covering in the ring in copper region, and assurance feed end and second covers between copper layer and do not contact.
The girth l of the rectangle that described gap is coiled into is:
Wherein λ is the wavelength of transmission microwave, the dielectric constant that ε is dielectric layer.
When the wavelength of the microwave of needs transmission is different, the length in corresponding gap is also different.Consider the impacts of parameter on transmission performance such as dielectric layer material and thickness, the girth in gap is close to the electrical length of transmission wavelength.
The diameter of described via hole is 0.4mm.
Distance between the center of adjacent two via holes is 1mm.
Via hole in first group of via hole is coiled into the corresponding sides of rectangle distance to described gap is 7.5mm.
Via hole in second group of via hole is coiled into the corresponding sides of rectangle distance to described gap is 2.6mm.
The via hole that in the open area of described open rectangular, extension is arranged is 5.2mm to the distance of the corresponding edge of feed end.
The material of described dielectric layer is polytetrafluoroethylene or pottery.
In the utility model, via hole refers to the distance of the rectangle corresponding sides that the center of via hole is coiled into gap to the distance in gap.
The advantage of the dual polarization slot antenna based on SIW technology of the present utility model is:
1) utilize SIW technology, realized complanation and the miniaturization of dual polarization slot antenna, and can realize the integrated of antenna and circuit;
2) application closed rectangular slit-shaped becomes symmetrical structure, is conducive to realize the dual polarization of antenna;
3) antenna adopts bottom duplex feeding structure, is conducive to improve dual-polarized high-isolation, and application open circuit microstrip line construction is as feeding network, can directly by coupled mode, microwave signal be imported in waveguide.
Accompanying drawing explanation
Fig. 1 is the surface structure schematic diagram of the dual polarization slot antenna based on SIW technology of the present embodiment;
Fig. 2 is the lower surface configuration schematic diagram of the dual polarization slot antenna based on SIW technology of the present embodiment.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is elaborated.
A dual polarization slot antenna based on SIW technology, comprises the substrate with via hole, and described substrate comprises dielectric layer, be positioned at first of dielectric layer end face covers copper layer and be positioned at second of dielectric layer bottom surface and cover copper layer.
As depicted in figs. 1 and 2, first covers copper layer is provided with gap 2, described second covers copper layer is provided with feed end 5, gap 2 is coiled into rectangle, via hole is divided into two groups and be in respectively the inside and outside both sides of rectangle (rectangle that gap 2 is coiled into), is respectively first group of via hole 3 of the inner side that is in rectangle and is in second group of via hole 1 in the outside of rectangle;
Feed end 5, for rectangle covers copper sheet (length of the feed end 5 of the present embodiment is 27mm, and wide is 7mm), is 2, and quadrature is arranged in dielectric layer bottom;
First group of via hole 3 is coiled into corner cut rectangle, and two bights of this corner cut rectangle homonymy are hypotenuse, and described hypotenuse is vertical with one group of opposite side of corresponding feed end respectively;
Second group of via hole 1 is coiled into open rectangular, and is positioned at the outside of the rectangle that gap is coiled into, the corresponding hypotenuse in position that two bights of this open rectangular homonymy are open area and each open area;
Second group of via hole 1 extends and arranges to substrate edges perpendicular to corresponding hypotenuse direction on edge, open area place.
The girth l of the rectangle that wherein, gap is coiled into is:
Wherein λ is the wavelength of transmission microwave, the dielectric constant that ε is dielectric layer, and the width in gap is 1.5mm.
In the present embodiment, the diameter of via hole is 0.4mm, and the distance between the center of adjacent two via holes is 1mm.Via hole in first group of via hole 3 is coiled into the distance d1=7.5mm of the corresponding sides of rectangle to gap.Via hole in second group of via hole 1 is coiled into the distance d2=2.6mm of the corresponding sides of rectangle to gap.The via hole that in the open area of open rectangular, extension is arranged is d3=5.2mm to the distance of the corresponding edge of feed end.The limit of parallel with hypotenuse and the close hypotenuse of feed end 4 is d4=4.5mm to the distance of hypotenuse.
For preventing that feed end and second from covering the short circuit of copper layer, bottom dielectric layer bottom is also provided with not two rectangles and does not cover copper region 4, and the minor face that rectangle does not cover copper region 4 overlaps with corresponding hypotenuse respectively, and the length of hypotenuse is 7mm.In the open area of open rectangular, extend the via hole of arranging and to rectangle, do not cover the distance d5=3mm in copper region 4.
The return loss <-15dB of the dual polarization slot antenna based on SIW technology of the present embodiment, polarization interport isolation <-30dB, relative bandwidth 10%.
The above; it is only embodiment of the present utility model; but protection range of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; the variation that can expect easily or replacement, within all should being encompassed in protection range of the present utility model.
Claims (8)
1. the dual polarization slot antenna based on SIW technology, comprise the substrate with via hole, described substrate comprises dielectric layer, be positioned at first of dielectric layer end face covers copper layer and is positioned at second of dielectric layer bottom surface and cover copper layer, it is characterized in that, described first covers copper layer is provided with gap, and described second covers copper layer is provided with feed end;
Described gap is coiled into rectangle, and via hole is divided into two groups and be in respectively the inside and outside both sides of described rectangle;
Described feed end is that rectangle covers copper sheet, and described feed end is 2, and quadrature is arranged in dielectric layer bottom;
First group of via hole is coiled into corner cut rectangle, and is positioned at the inside of the rectangle that gap is coiled into, and two bights of this corner cut rectangle homonymy are hypotenuse, and described hypotenuse is vertical with one group of opposite side of corresponding feed end respectively;
Second group of via hole is coiled into open rectangular, and is positioned at the outside of the rectangle that gap is coiled into, the corresponding hypotenuse in position that two bights of this open rectangular homonymy are open area and each open area;
Second group of via hole extends and arranges to substrate edges perpendicular to corresponding hypotenuse direction on edge, open area place.
2. the dual polarization slot antenna based on SIW technology as claimed in claim 1, is characterized in that, the girth l of the rectangle that described gap is coiled into is:
Wherein λ is the wavelength of transmission microwave, the dielectric constant that ε is dielectric layer.
3. the dual polarization slot antenna based on SIW technology as claimed in claim 2, is characterized in that, the diameter of described via hole is 0.4mm.
4. the dual polarization slot antenna based on SIW technology as claimed in claim 3, is characterized in that, the distance between the center of adjacent two via holes is 1mm.
5. the dual polarization slot antenna based on SIW technology as claimed in claim 4, is characterized in that, the via hole in first group of via hole is coiled into the corresponding sides of rectangle distance to described gap is 7.5mm.
6. the dual polarization slot antenna based on SIW technology as claimed in claim 5, is characterized in that, the via hole in second group of via hole is coiled into the corresponding sides of rectangle distance to described gap is 2.6mm.
7. the dual polarization slot antenna based on SIW technology as claimed in claim 6, is characterized in that, the via hole that in the open area of described open rectangular, extension is arranged is 5.2mm to the distance of the corresponding edge of feed end.
8. the dual polarization slot antenna based on SIW technology as claimed in claim 7, is characterized in that, the material of described dielectric layer is polytetrafluoroethylene or pottery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420135547.8U CN203760675U (en) | 2014-03-24 | 2014-03-24 | Dual polarized slot antenna based on SIW technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420135547.8U CN203760675U (en) | 2014-03-24 | 2014-03-24 | Dual polarized slot antenna based on SIW technology |
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| Publication Number | Publication Date |
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| CN203760675U true CN203760675U (en) | 2014-08-06 |
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| CN201420135547.8U Expired - Fee Related CN203760675U (en) | 2014-03-24 | 2014-03-24 | Dual polarized slot antenna based on SIW technology |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943963A (en) * | 2014-03-24 | 2014-07-23 | 绍兴市精伦通信科技有限公司 | Dual polarization slot antenna based on SIW technology |
| CN109921187A (en) * | 2019-03-11 | 2019-06-21 | 青岛海信移动通信技术股份有限公司 | Millimeter wave dual polarized antenna and array antenna |
| US11145983B1 (en) | 2020-06-23 | 2021-10-12 | National Chiao Tung University | Substrate-integrated-waveguide-fed cavity-backed dual-polarized patch antenna |
-
2014
- 2014-03-24 CN CN201420135547.8U patent/CN203760675U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943963A (en) * | 2014-03-24 | 2014-07-23 | 绍兴市精伦通信科技有限公司 | Dual polarization slot antenna based on SIW technology |
| CN109921187A (en) * | 2019-03-11 | 2019-06-21 | 青岛海信移动通信技术股份有限公司 | Millimeter wave dual polarized antenna and array antenna |
| US11145983B1 (en) | 2020-06-23 | 2021-10-12 | National Chiao Tung University | Substrate-integrated-waveguide-fed cavity-backed dual-polarized patch antenna |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140806 Termination date: 20170324 |
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| CF01 | Termination of patent right due to non-payment of annual fee |