CN203708114U - Linear controllable power supply for high-temperature-rise-rate wire mesh reactors - Google Patents
Linear controllable power supply for high-temperature-rise-rate wire mesh reactors Download PDFInfo
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- CN203708114U CN203708114U CN201420060093.2U CN201420060093U CN203708114U CN 203708114 U CN203708114 U CN 203708114U CN 201420060093 U CN201420060093 U CN 201420060093U CN 203708114 U CN203708114 U CN 203708114U
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- 230000003750 conditioning effect Effects 0.000 claims abstract description 13
- 239000003990 capacitor Substances 0.000 claims abstract description 10
- 230000003993 interaction Effects 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 18
- 238000005070 sampling Methods 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000004044 response Effects 0.000 abstract description 8
- 238000013461 design Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000002028 Biomass Substances 0.000 description 1
- 235000007516 Chrysanthemum Nutrition 0.000 description 1
- 244000189548 Chrysanthemum x morifolium Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002817 coal dust Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses a linear controllable power supply for high-temperature-rise-rate wire mesh reactors. The linear controllable power supply is characterized by comprising a main circuit system, a signal conditioning circuit system, an MCU control system and a system auxiliary power supply, wherein the main circuit system is composed of an IGBT, an IGBT driving circuit, a power frequency transformer and a filter capacitor, and the MCU control system is composed of PWM signal output, a user interaction interface and an external interface. Under MCU control, the power frequency transformer changes the filter capacitance, and high response time can be achieved; small ripple can be achieved through technical means such as a signal conditioning circuit; and the system security can be improved by adopting the system auxiliary power supply.
Description
Technical field
Experimental provision when the utility model relates to coal dust, biomass and castoff heat utilization research, specifically a kind of linear controllable electric power for high heating rate silk screen reactor.
Background technology
The controlled electrically heated reactor of heating rate mainly contains fixed bed, thermogravimetric etc., wherein fixed bed adopts electric heating, specifically reactor is placed in electric furnace and by heating by electric cooker, mode of heating has two kinds: a kind of is temperature programming mode of heating, its shortcoming is under the controlled condition of the rate of heat addition, heating rate not high (lower than 100 ℃/min); Another kind, for being rapidly heated,, is placed in reactor fast in electric furnace by heating by electric cooker after uniform temperature, and its shortcoming is that heating rate is uncontrollable, and the intensification course of test piece and operating personnel's operative relationship are very large, and repeatability is poor.
The theoretical heating rate of silk screen reactor can reach 1000 ℃/s, and in order to reach so high heating rate, key has 2 points: the first point, and the sample rate of thermocouple is enough high, and sample rate is up to 100 times/s; Second point, is that the speed of response of heating power supply is enough fast, and the response time from 0V to maximum voltage is that the response time need to be less than 5ms, meanwhile, in order to guarantee the accuracy of temperature control program, power supply ripple size is also had to harsher requirement.For the first point, can realize by the high temperature sampling device of buying sample rate, for second point, in view of the speed of response of the controllable electric power of selling on domestic market fast not, substantially in the response time in about 100ms, can not meet the requirement of high speed temperature control, and abroad if Japanese chrysanthemum water PAT-T series rise/fall time in the time of nominal load is 100ms/100ms, the rise/fall time of Agilent N8700 series in the time of nominal load is commonly 80ms/100ms, this a series of product all can not meet the requirement of this silk screen reactor, so need exploitation to be applicable to the fast linear DC power supply controllable electric power of this silk screen reactor, the particularly powerful controllable electric power of high response speed.
Utility model content
The utility model, for the problems referred to above, has designed the linear controllable electric power for high heating rate silk screen reactor, and this power supply belongs to linear controllable electric power, when heating is provided, can accept the control voltage signal of 0-5V, thereby controls power output.
The technical solution of the utility model is as follows:
For the linear controllable electric power of high heating rate silk screen reactor, it is characterized in that: comprise main circuit system, signal conditioning circuit, MCU control system and system supplymentary power supply;
Described main circuit system comprises IGBT, IGBT drive circuit;
Described MCU control system adopts MCU unit;
Described MCU unit connects signal conditioning circuit, and the PWM mouth of MCU unit is connected to IGBT drive circuit, and IGBT drive circuit connects IGBT;
Described main circuit system also comprises Industrial Frequency Transformer, filter capacitor, and IGBT is connected with Industrial Frequency Transformer, and Industrial Frequency Transformer is connected with filter capacitor, and filter capacitor connects signal conditioning circuit.
The rated voltage of described IGBT is 600V, and rated current is 50A.
Described IGBT drive circuit adopts high speed photo coupling TLP250, for isolation drive IGBT.
Described main circuit system also comprises Industrial Frequency Transformer, and the former limit input voltage of Industrial Frequency Transformer is 220VAC, and output voltage is 0 ~ 24VAC, and no-load voltage ratio n is:
, wherein U
pfor original edge voltage, U
sfor secondary voltage.
Described MCU control unit is provided with the output PWM mouth that drives signal for four road IGBT, by the incident management Implement of Function Module of MCU.
Described MCU control unit is also connected with user interactions interface and external interface; Described user interactions interface adopts three LED 7 segment encodes (mixed decimal point) to show the size of current system input, output voltage and output current, facilitate user to understand working state of system, adopt the mode dynamically showing, saving system IO mouth, by the corresponding position of 4-16 decoder gating, by IO1-8 output display data; Described external interface adopts RS485 port to realize, and synchronously triggers mouth can, by the capture-port of MCU, the switching time of pwm signal be set by 1 road PWM, and described RS485 port adopts Max485 chip to realize, and can realize full-duplex communication.
Described MCU control unit be provided with AD thief hatch, AD sampling module by MCU inside is realized, for the information such as various voltages, current signal of the current system operating state of sampling, without extending out AD conversion chip, greatly reduce the complexity of the Hardware Design.
The single-ended flyback power supply that described system supplymentary power supply selecting circuit topology is simple, volume is little, adopts the control chips such as TOP Switching Power Supply series or UC3845 to realize.
MCU unit is by signal conditioning circuit and outside interactive interface obtaining information, and process and export PWM ripple, PWM being opened and being turn-offed by high speed photo coupling TLP250 isolation rear drive triode, and then output signal driving IGBT, finally realize opening with shutoff of MCU signal controlling IGBT and realize AC voltage adjusting.Drive IGBT by IGBT drive circuit, exchange output pressure regulation.
The beneficial effects of the utility model are as follows:
(1) by changing filter capacitor size, can realize the higher response time;
(2) by adopting the technological means such as signal condition, realize less ripple;
(3) by adopting system supplymentary power supply, the fail safe that can improve system.
Accompanying drawing explanation
Fig. 1 is system global structure block diagram of the present utility model.
Wherein Reference numeral is: 1 IGBT, 2 IGBT drive circuits, 3 MCU control system, 4 signal conditioning circuits, 5 Industrial Frequency Transformers, 6 filter capacitors.
Embodiment
Below in conjunction with example and accompanying drawing, the utility model is described in further detail.
The linear controllable electric power for high heating rate silk screen reactor shown in Fig. 1, comprises main circuit system, signal conditioning circuit 4, MCU control system 3 and system supplymentary power supply;
1, main circuit system is made up of IGBT 1, IGBT drive circuit 2, Industrial Frequency Transformer 5 and filter capacitor 6;
（1）IGBT
IGBT is a kind of New Type Power Devices that GTR and power MOSFET are compounded to form that has finding out in nearest twenty or thirty year, in native system, the operating voltage of IGBT 1 is 220VAC, consider that voltage fluctuation electrical network scope is: 185VAC ~ 242VAC, system power output 2KW, Industrial Frequency Transformer 5 conversion efficiencys 80%.
By can be calculated primary electric current:
Consider 2.5 times of surpluses, IGBT 1 current rating is:
Primary voltage peak value is:
Consider 1.5 times of surpluses, IGBT 1 voltage rating is:
The rated voltage of determining IGBT 1 is 600V, and rated current is 50A.
(2) design of IGBT drive circuit 2
Based on the performance evaluation to IGBT 1, by high speed photo coupling TLP250 isolation drive IGBT 1.
(3) design of transformer
In this system, transformer primary side input voltage is 220VAC, and transformer output voltage is 0 ~ 24VAC, considers that duty ratio modulation pulsewidth adjustable extent is 0 ~ 100%, and the consideration of part surplus, and no-load voltage ratio n is:
By upper known transformer:
Original edge voltage is U
p=220VAC/50Hz, primary current is I
p=13.5A;
Secondary voltage is U
s=24VAC, electric current is:
.
Transformer, in rich process processed, notices that armature winding leakage inductance is the smaller the better, and secondary winding leakage inductance is controlled at a lower value.
2, signal conditioning circuit 4 designs
Signal conditioning circuit 4 is mainly that signal is converted, and high pressure, large current signal are become to the receptible small voltage signal of MCU, and then MCU processes to signal.
(1) output current signal
Obtain mA level signal value by current sensor, by modulate circuit, current value is converted to the magnitude of voltage that corresponding processor can be processed.
(2) input, output voltage signal
Realize input, output voltage values are nursed one's health into the signal that MCU can accept, for the processing of MCU.
(3) output current restriction
Output current restriction is mainly the maximum that limits output current by the size of sampling DC voltage value, and when output current is greater than after set point, set point will no longer increase, and play the effect of protection system.For example, in this example, output current is set as 80A, and output current is just limited to below 80A so.
3, MCU control system 3 designs
MCU control section is the core of system, mainly realizes the realization of the mouths such as PWM output, system mode demonstration, AD sampling.
(1) pwm signal output
Value by the timer in MCU and comparand register compares, and controls IO mouth output low and high level.The cycle of timer has determined the switch periods of PWM ripple, and the value of comparand register has determined the duty ratio of PWM ripple, and the size of duty ratio has determined the size of output voltage, and then controls temperature and the programming rate of heating element.
(2) user interactions Interface design
The size that shows current system input, output voltage and output current by three LED 7 segment encodes (mixed decimal point), facilitates user to understand working state of system.
Adopt the mode dynamically showing, save system IO mouth.By the corresponding position of 4-16 decoder gating, by IO1-8 output display data.
(3) external interface design
Described external interface adopts RS485 port to realize, and synchronously triggers mouth can, by the capture-port of MCU, the switching time of pwm signal be set by 1 road PWM, and described RS485 port adopts Max485 chip to realize, and can realize full-duplex communication.
Four PWM mouth PWM1-PWM4, output four road IGBT drive signal, by the incident management Implement of Function Module of MCU.
AD thief hatch, the information such as various voltages, current signal of sampling current system operating state, realizes by the AD sampling module of MCU inside, without extending out AD conversion chip, has greatly reduced the complexity of the Hardware Design.
4, system supplymentary Power Management Design
In system, need the voltage source of the electric pressures such as 24V, 12V, 5V, because it requires multichannel output, power output is little, therefore selected the single-ended flyback power supply that circuit topology is simple, volume is little, for system works provides power, adopt the control chips such as TOP Switching Power Supply series or UC3845 to realize by designed, designed Switching Power Supply.Switching Power Supply makes input and output isolation by high frequency transformer, has realized no industrial frequency transformer 5 and electrical isolation.
This power supply is accepted the voltage input signal of 0 ~ 5V of external circuit, and after treatment, the voltage signal of a 0 corresponding ~ 24V of output, is all less than rise time and fall time 5ms.
The above is preferred embodiment of the present utility model, but the utility model should not be confined to the disclosed content of this embodiment and accompanying drawing.Do not depart from the equivalence completing under spirit disclosed in the utility model so every or revise, all falling into the scope of the utility model protection.
Claims (8)
1. for the linear controllable electric power of high heating rate silk screen reactor, it is characterized in that: comprise main circuit system, signal conditioning circuit (4), MCU control system (3) and system supplymentary power supply;
Described main circuit system comprises IGBT(1), IGBT drive circuit (2);
Described MCU control system (3) adopts MCU unit;
Described MCU unit connects signal conditioning circuit (4), and the PWM mouth of MCU unit is connected to IGBT drive circuit (2), and IGBT drive circuit (2) connects IGBT(1);
Described main circuit system also comprises Industrial Frequency Transformer (5), filter capacitor (6), IGBT(1) be connected with Industrial Frequency Transformer (5), Industrial Frequency Transformer (5) is connected with filter capacitor (6), and filter capacitor (6) connects signal conditioning circuit (4).
2. the linear power supply of the electrically heated reactor for the speed that is rapidly heated according to claim 1, is characterized in that: described IGBT(1) rated voltage be 600V, rated current is 50A.
3. the linear power supply of the electrically heated reactor for the speed that is rapidly heated according to claim 1, is characterized in that: described IGBT drive circuit (2) adopts for isolation drive IGBT(1) high speed photo coupling TLP250.
4. the linear power supply of the electrically heated reactor for the speed that is rapidly heated according to claim 1, is characterized in that: the former limit input voltage of described Industrial Frequency Transformer (5) is 220VAC, and output voltage is 0 ~ 24VAC, and no-load voltage ratio n is:
, wherein U
pfor original edge voltage, U
sfor secondary voltage.
5. the linear power supply of the electrically heated reactor for the speed that is rapidly heated according to claim 1, is characterized in that: described MCU unit is provided with the output PWM mouth that drives signal for four road IGBT, by the incident management Implement of Function Module of MCU.
6. according to claim 1 or 5 for the linear power supply of the electrically heated reactor of the speed that is rapidly heated, it is characterized in that: described MCU unit is also connected with user interactions interface and external interface; Described user interactions interface adopts three LED 7 segment encodes to show; Described external interface adopts RS485 port to realize, and described RS485 port adopts Max485 chip to realize.
7. the linear power supply of the electrically heated reactor for the speed that is rapidly heated according to claim 6, is characterized in that: the inside of described MCU unit has AD sampling module, and described AD sampling module is as AD thief hatch.
8. the linear power supply of the electrically heated reactor for the speed that is rapidly heated according to claim 1, is characterized in that: described system supplymentary power supply is selected single-ended flyback power supply, adopts TOP Switching Power Supply series or UC3845 to realize.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420060093.2U CN203708114U (en) | 2014-02-10 | 2014-02-10 | Linear controllable power supply for high-temperature-rise-rate wire mesh reactors |
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| CN201420060093.2U CN203708114U (en) | 2014-02-10 | 2014-02-10 | Linear controllable power supply for high-temperature-rise-rate wire mesh reactors |
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| CN203708114U true CN203708114U (en) | 2014-07-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944405A (en) * | 2014-02-10 | 2014-07-23 | 中国东方电气集团有限公司 | Linear controllable power supply used for high-heating-rate wire mesh reactor |
-
2014
- 2014-02-10 CN CN201420060093.2U patent/CN203708114U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944405A (en) * | 2014-02-10 | 2014-07-23 | 中国东方电气集团有限公司 | Linear controllable power supply used for high-heating-rate wire mesh reactor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180423 Address after: 610000, No. 18, West core road, hi tech West District, Sichuan, Chengdu Patentee after: DONGFANG ELECTRIC Co.,Ltd. Address before: Jinniu District Chengdu City, Sichuan province 610036 Shu Road No. 333 Patentee before: DONGFANG ELECTRIC Corp. |
|
| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140709 |
|
| CX01 | Expiry of patent term |