CN203660272U - Semiconductor laser with optical energy feedback function - Google Patents

Semiconductor laser with optical energy feedback function Download PDF

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Publication number
CN203660272U
CN203660272U CN201320873948.9U CN201320873948U CN203660272U CN 203660272 U CN203660272 U CN 203660272U CN 201320873948 U CN201320873948 U CN 201320873948U CN 203660272 U CN203660272 U CN 203660272U
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CN
China
Prior art keywords
semiconductor laser
tube
laser
laser diode
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201320873948.9U
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Chinese (zh)
Inventor
孙建华
刘佳顺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Huanic Optoelectronic Corp Ltd
Original Assignee
Xian Huanic Optoelectronic Corp Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Huanic Optoelectronic Corp Ltd filed Critical Xian Huanic Optoelectronic Corp Ltd
Priority to CN201320873948.9U priority Critical patent/CN203660272U/en
Application granted granted Critical
Publication of CN203660272U publication Critical patent/CN203660272U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model provides a semiconductor laser. The semiconductor laser comprises a tube socket, a laser diode arranged on the tube socket, and a tube cap arranged at the exterior of the laser diode; the tube socket is provided with an annular PD tube socket which surrounds the periphery of the tube cap; the annular wall of the annular PD tube socket is provided with a window for mounting a PD tube; a left side wall and a right side wall of the window are respectively provided with a PD tube mounting surface which extends to a vertical middle line of the window; and angles formed between the PD tube mounting surfaces and the optical axis of the laser diode are larger than 0 degree and are smaller or equal to 135 degrees. According to the semiconductor laser of the utility model, the PD tube can be integrated with the semiconductor laser so as to form one body under the premise that the perception of the optical energy of laser outputted by the semiconductor laser can be ensured, and therefore, the semiconductor laser with an optical energy feedback function is small in size.

Description

A kind of semiconductor laser with luminous energy feedback function
Technical field
The utility model belongs to laser technology field, is specifically related to a kind of semiconductor laser with luminous energy feedback function.
Background technology
In order to know the light energy output of semiconductor laser, thereby realize the regulation and control of the light energy output of noise spectra of semiconductor lasers, generally that PD pipe (photodiode) in the light path of the output light by being arranged on semiconductor laser gathers Output of laser, be translated into the signal of telecommunication and input to control circuit, thereby regulate and control the voltage of semiconductor laser or electric current and complete the regulation and control of the light energy of the Output of laser of noise spectra of semiconductor lasers by control circuit, but the obvious problem existing is, the setting of PD pipe and semiconductor laser split arrange, cause the volume of whole device larger.
Utility model content
The purpose of this utility model one is to overcome existing system or the larger problem of device volume that semiconductor laser light energy output exists of obtaining.
For this reason, the utility model provides a kind of semiconductor laser, comprise base, be arranged on the laser diode on base and be arranged on the pipe cap outside this laser diode, its special character is, on described base, be provided with the ring-shaped P D base that is looped around pipe cap periphery, in the annular wall of this ring-shaped P D base, be provided with the window of an installation PD pipe, on the left and right sidewall of this window, be respectively provided with the PD pipe installed surface that a vertical center line to window extends, the angle of the optical axis of this PD pipe installed surface and laser diode is greater than zero degree and little or equal 135 °.
Above-mentioned laser diode is green laser diode.
The diameter of above-mentioned PD base is 3~7mm.
The utility model has the advantages that: under the prerequisite of light energy of guaranteeing perception semiconductor laser Output of laser, PD pipe and semiconductor laser are made into integration, and the whole semiconductor laser volume with luminous energy feedback function is little.
Accompanying drawing explanation
Fig. 1 is the semiconductor laser structure schematic diagram with luminous energy feedback function that PD pipe is not installed.
Fig. 2 is the semiconductor laser structure schematic diagram with luminous energy feedback function that PD pipe is installed.
Description of reference numerals: 1, pipe cap; 2, PD base; 3, window; 4,5, PD pipe installed surface; 6, PD pipe.
Embodiment
In order to overcome existing system or the larger problem of device volume that semiconductor laser light energy output exists of obtaining, the present embodiment provides a kind of Fig. 1, the semiconductor laser with luminous energy feedback function shown in 2, comprise base, be arranged on the laser diode on base and be arranged on the pipe cap 1 outside this laser diode, on base, be provided with the ring-shaped P D base 2 that is looped around pipe cap 1 periphery, in the annular wall of this ring-shaped P D base 2, be provided with the window 3 of an installation PD pipe 6, on the left and right sidewall of this window 3, be respectively provided with a PD pipe installed surface 4 extending to the vertical center line of window 3, 5, this PD pipe installed surface 4, 5 are greater than zero degree and little or equal 135 ° with the angle of the optical axis of laser diode.
Be not difficult to find out thus, this scheme is made into integration PD pipe with semiconductor laser, not only realize the light energy of the Output of laser of feedback semiconductor laser, the more important thing is and overcome in prior art because the large problem of the whole system that PD pipe and semiconductor laser split setting are caused or device volume.The semiconductor laser volume that this scheme provides is little, and the diameter (generally referring to its external diameter) of PD base 2 is 3~7mm.
The laser diode of wherein mentioning can be green laser diode, certainly, can also select as required ruddiness or blue light laser diode.
More than exemplifying is only to illustrate of the present utility model, does not form the restriction to protection range of the present utility model, within the every and same or analogous design of the utility model all belongs to protection range of the present utility model.

Claims (3)

1. one kind has the semiconductor laser of luminous energy feedback function, comprise base, be arranged on the laser diode on base and be arranged on the pipe cap (1) outside this laser diode, it is characterized in that: on described base, be provided with the ring-shaped P D base (2) that is looped around pipe cap (1) periphery, in the annular wall of this ring-shaped P D base (2), be provided with the window (3) of an installation PD pipe (6), on the left and right sidewall of this window (3), be respectively provided with a PD pipe installed surface (4 extending to the vertical center line of window (3), 5), this PD pipe installed surface (4, 5) be greater than zero degree and little or equal 135 ° with the angle of the optical axis of laser diode.
2. the semiconductor laser with luminous energy feedback function as claimed in claim 1, is characterized in that: described laser diode is green laser diode.
3. the semiconductor laser with luminous energy feedback function as claimed in claim 1, is characterized in that: the diameter of described PD base (2) is 3~7mm.
CN201320873948.9U 2013-12-29 2013-12-29 Semiconductor laser with optical energy feedback function Expired - Lifetime CN203660272U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320873948.9U CN203660272U (en) 2013-12-29 2013-12-29 Semiconductor laser with optical energy feedback function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320873948.9U CN203660272U (en) 2013-12-29 2013-12-29 Semiconductor laser with optical energy feedback function

Publications (1)

Publication Number Publication Date
CN203660272U true CN203660272U (en) 2014-06-18

Family

ID=50926624

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201320873948.9U Expired - Lifetime CN203660272U (en) 2013-12-29 2013-12-29 Semiconductor laser with optical energy feedback function

Country Status (1)

Country Link
CN (1) CN203660272U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104752951A (en) * 2013-12-29 2015-07-01 西安华科光电有限公司 Semiconductor laser with optical energy feedback function

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104752951A (en) * 2013-12-29 2015-07-01 西安华科光电有限公司 Semiconductor laser with optical energy feedback function

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GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20140618