CN203639550U - Novel laser photoelectrochemical gas-phase reaction device - Google Patents
Novel laser photoelectrochemical gas-phase reaction device Download PDFInfo
- Publication number
- CN203639550U CN203639550U CN201320718912.3U CN201320718912U CN203639550U CN 203639550 U CN203639550 U CN 203639550U CN 201320718912 U CN201320718912 U CN 201320718912U CN 203639550 U CN203639550 U CN 203639550U
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- China
- Prior art keywords
- silica tube
- reaction device
- phase reaction
- reaktionsofen
- photoelectrochemical
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Abstract
The utility model discloses a novel laser photoelectrochemical gas-phase reaction device. The novel laser photoelectrochemical gas-phase reaction device is characterized by comprising a reaction furnace, wherein a quartz tube is arranged inside the reaction furnace; a window through which a laser beam can transmit is formed at one end of the quartz tube; a first air inlet and a second air inlet are formed at one end of the quartz tube with the window; a vacuum pump connecting pipe is arranged at the other end of the quartz tube; and a substrate rack is arranged inside the quartz tube. In order to overcome the defects of the prior art, the novel laser photoelectrochemical gas-phase reaction device which is simple in structure, and low in production cost is provided.
Description
Technical field
The utility model relates to the photic chemical gas phase reaction device of a kind of new pattern laser.
Background technology
Photic its structure of chemical gas phase reaction device of existing new pattern laser is relatively complicated, and production cost is high.Therefore be necessary to provide a kind of simple in structure, the photic chemical gas phase reaction device of new pattern laser that input cost is low, to satisfy the demands.
Utility model content
The purpose of this utility model is in order to overcome weak point of the prior art, provides a kind of simple in structure, and production cost is low, the photic chemical gas phase reaction device of new pattern laser.
In order to achieve the above object, the utility model adopts following scheme:
The photic chemical gas phase reaction device of a kind of new pattern laser, it is characterized in that: include Reaktionsofen, in described Reaktionsofen, be provided with silica tube, on described silica tube one end, be provided with the window that can allow laser beam see through, be provided with and on window one end, be provided with the first inlet mouth and the second inlet mouth at described silica tube, on the described silica tube the other end, be provided with vacuum pump pipe connecting, in described silica tube, be provided with substrate frame.
The photic chemical gas phase reaction device of new pattern laser as above, is characterized in that described substrate frame balance and the setting of described silica tube axial direction due, and the shortest distance of described substrate frame and silica tube inwall is 5-10mm.
The photic chemical gas phase reaction device of new pattern laser as above, is characterized in that being provided with heating arrangements on described Reaktionsofen.
The photic chemical gas phase reaction device of new pattern laser as above, is characterized in that described heating arrangements is the heater strip being wrapped on Reaktionsofen outer wall.
In sum, the utility model with respect to its beneficial effect of prior art is:
The utility model product structure is simple, and production cost is relatively low.
Brief description of the drawings
Fig. 1 is schematic diagram of the present utility model.
Embodiment
Below in conjunction with brief description of the drawings and embodiment, the utility model is further described:
The photic chemical gas phase reaction device of a kind of new pattern laser as shown in Figure 1, include Reaktionsofen 1, in described Reaktionsofen 1, be provided with silica tube 2, on described silica tube 2 one end, be provided with the window 4 that can allow laser beam 3 see through, be provided with at described silica tube 2 on one end of window 4 and be provided with the first inlet mouth 5 and the second inlet mouth 6, on described silica tube 2 the other ends, be provided with vacuum pump pipe connecting 7, in described silica tube 2, be provided with substrate frame 8.
The balance of substrate frame 8 described in the utility model and the 2 axial direction due settings of described silica tube, described substrate frame 8 is 5-10mm with the shortest distance of silica tube 2 inwalls.Wherein on described Reaktionsofen 1, be provided with heating arrangements.Described heating arrangements can be the heater strip being wrapped on Reaktionsofen 1 outer wall.Described heating arrangements can also be other type of heating.
This device use ArF laser apparatus under low pressure, in hot wall Reaktionsofen, by NH
3obtain SiN with silane photodecomposition solution.
Laser beam is injected and by being positioned at 5-10mm place, substrate top along silica tube horizontal direction.Silica tube vacuumizes and uses He continuous purification to flow backwards to prevent mercury oil continuously, just starts to carry out when laser enters deposition in silica tube.NH
3than being 5:1, total gas pressure is 33Pa with silane, and depositing temperature is 225～625 DEG C.By changing NH
3/ SiH
4than, depositing temperature or gas, component that can SiN.
More than show and described ultimate principle of the present utility model and principal character and advantage of the present utility model.The technician of the industry should understand; the utility model is not restricted to the described embodiments; that in above-described embodiment and specification sheets, describes just illustrates principle of the present utility model; do not departing under the prerequisite of the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the utility model.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (3)
1. the photic chemical gas phase reaction device of new pattern laser, it is characterized in that: include Reaktionsofen (1), in described Reaktionsofen (1), be provided with silica tube (2), on described silica tube (2) one end, be provided with the window (4) that can allow laser beam (3) see through, be provided with at described silica tube (2) on one end of window (4) and be provided with the first inlet mouth (5) and the second inlet mouth (6), on described silica tube (2) the other end, be provided with vacuum pump pipe connecting (7), in described silica tube (2), be provided with substrate frame (8).
2. the photic chemical gas phase reaction device of a kind of new pattern laser according to claim 1, it is characterized in that described substrate frame (8) balance and described silica tube (2) axial direction due setting, described substrate frame (8) is 5-10mm with the shortest distance of silica tube (2) inwall.
3. the photic chemical gas phase reaction device of a kind of new pattern laser according to claim 1, is characterized in that being provided with heating arrangements on described Reaktionsofen (1), and described heating arrangements is for being wrapped in the heater strip on Reaktionsofen (1) outer wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320718912.3U CN203639550U (en) | 2013-11-14 | 2013-11-14 | Novel laser photoelectrochemical gas-phase reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320718912.3U CN203639550U (en) | 2013-11-14 | 2013-11-14 | Novel laser photoelectrochemical gas-phase reaction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203639550U true CN203639550U (en) | 2014-06-11 |
Family
ID=50870811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320718912.3U Expired - Fee Related CN203639550U (en) | 2013-11-14 | 2013-11-14 | Novel laser photoelectrochemical gas-phase reaction device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203639550U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103834933A (en) * | 2013-11-14 | 2014-06-04 | 中山市创科科研技术服务有限公司 | Laser photoinduced chemical vapor reaction device for preparing alpha-SiO film by using laser |
-
2013
- 2013-11-14 CN CN201320718912.3U patent/CN203639550U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103834933A (en) * | 2013-11-14 | 2014-06-04 | 中山市创科科研技术服务有限公司 | Laser photoinduced chemical vapor reaction device for preparing alpha-SiO film by using laser |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140611 Termination date: 20141114 |
|
| EXPY | Termination of patent right or utility model |