CN203632640U - Two-way transmission interface converting circuit - Google Patents
Two-way transmission interface converting circuit Download PDFInfo
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- CN203632640U CN203632640U CN201320783812.9U CN201320783812U CN203632640U CN 203632640 U CN203632640 U CN 203632640U CN 201320783812 U CN201320783812 U CN 201320783812U CN 203632640 U CN203632640 U CN 203632640U
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Abstract
The embodiment of the utility model provides a two-way transmission interface converting circuit. The two-way transmission interface converting circuit comprises a first converting module including a first current-to-voltage converting circuit, a first voltage-to-current converting circuit, and a first detection circuit, wherein the first current-to-voltage converting circuit comprises at least one diode; the first voltage-to-current converting circuit comprises a first switch, a second switch, and a first current sources; the second switch is turned off when the first switch is turned on and the first switch is turned off when the second switch is turned on; the first detection circuit comprises a comparator; and one input terminal of the first comparator is connected to a high voltage sources of a first voltage domain while the other input terminal of the first comparator is connected with a transmission line. With the adoption of the two-way transmission interface converting circuit provided by the embodiment of the utility model and by virtue of arranging the current and voltage converting circuits and the comparator as the voltage detection circuit, the signal transmission via the same signal line between two voltage domains can be realized.
Description
Technical field
The utility model relates to electronic applications, is specifically related to a kind of transmitted in both directions interface conversion circuit.
Background technology
Between the different chips of integrated circuit, need to intercom mutually, for the communication requirement between chip, prior art adopts I conventionally
2the standard that C bus transfer agreement is formulated, it has highly versatile, and volume of transmitted data is large, and transmission speed is a little fast, but for volume of transmitted data and the lower scene of transmission rate, cost is higher.In addition, prior art also has the unidirectional Realization Method of Communication of single line, and defect is to realize one way signal transmission.
Utility model content
The purpose of this utility model is to provide a kind of transmitted in both directions interface conversion circuit, to realize in the situation that meeting basic demand, realizes mongline two-way communication cheaply.
The utility model embodiment first aspect provides a kind of transmitted in both directions interface conversion circuit, and described transmitted in both directions interface conversion circuit comprises:
The first modular converter, is arranged on the first chip, and described the first chip operation is at the first voltage domain, and described the first modular converter further comprises: the first electric current is to voltage conversion circuit, the first voltage to current converter circuit and the first testing circuit; Described the first electric current comprises at least one diode to voltage conversion circuit, described the first voltage comprises the first switch, second switch and the first current source to current converter circuit, described the first testing circuit comprises the first comparator, the first input end of described the first comparator connects the high-pressure side of described the first voltage domain, its second input connects transmission line, and described the first switch is contrary with conducting and the cut-off state of described second switch.
According to the transmitted in both directions interface conversion circuit described in the utility model preferred embodiment, described the first electric current comprises a diode to voltage conversion circuit, this diode is the first diode, the anode of one termination the first diode of the first switch in described modular converter, the current input terminal of another termination the first current source of the first switch, the current output terminal of the first current source connects the low-pressure end of the first voltage domain, the negative electrode of the first diode connects the high-pressure side of the first voltage domain, one end of second switch connects the high-pressure side of the first voltage domain, the other end connects the anode of the first diode, the second input of the first comparator connects the first switch, the node that second switch is connected jointly with the first diode, this node is connected with the transmission ends of the second chip as the transmission ends of chip, institute's the second chip operation is in second voltage territory, the low-voltage in described second voltage territory equates with the high voltage of described the first voltage domain.
According to the transmitted in both directions interface conversion circuit described in the utility model preferred embodiment, also comprise:
The second modular converter, is arranged on the first chip, and it comprises that the second electric current is to voltage conversion circuit, second voltage to current converter circuit, and the second testing circuit; Described the second electric current comprises at least one diode to voltage conversion circuit, described second voltage comprises the 3rd switch, the 4th switch and the second current source to current converter circuit, described the second testing circuit comprises the second comparator, the first input end of described the second comparator connects the low-pressure end of described the first voltage domain, its second input connects transmission line, and described the 3rd switch is contrary with conducting and the cut-off state of described the 4th switch.
According to the transmitted in both directions interface conversion circuit described in the utility model preferred embodiment, described the second electric current comprises a diode to voltage conversion circuit, this diode is the second diode, the negative electrode of one termination the second diode of the 3rd switch in described modular converter, the current output terminal of another termination the second current source of the 3rd switch, the current input terminal of the second current source connects the high-pressure side in second voltage territory, the low-pressure end of anodic bonding first voltage domain of the second diode, one end of the 4th switch connects the low-pressure end of the first voltage domain, the other end connects the negative electrode of the second diode, the second input of the second comparator connects the 3rd switch, the node that the 4th switch is connected jointly with the second diode, this node is connected with the transmission ends of the 3rd chip as the transmission ends of the first chip, described the 3rd chip operation is in tertiary voltage territory, the high voltage in described tertiary voltage territory equates with the low-voltage of described the first voltage domain.
According to the transmitted in both directions interface conversion circuit described in the utility model preferred embodiment, when described the first chip is during to described the second chip transmission of data, if signal corresponding to described data is high level, the first switch conduction in described the first chip, to make the low-voltage of described transmission-line voltage lower than described second voltage territory, trigger described the second chip detection after the low-voltage of described transmission-line voltage lower than described second voltage territory, output high level; If signal corresponding to described data is low level, described second switch conducting, to make described transmission-line voltage equal the low-voltage in described second voltage territory, trigger described the second chip detection and equal to described transmission-line voltage after the low-voltage in described second voltage territory, output low level.
According to the transmitted in both directions interface conversion circuit described in the utility model preferred embodiment, in the time stating the first chip and receive the data of described the second chip transmission, if signal corresponding to described data is high level, described transmission-line voltage is higher than the high voltage of described the first voltage domain, trigger described the first chip detection after the high voltage of described transmission-line voltage higher than described the first voltage domain, output high level; If signal corresponding to described data is low level, described transmission-line voltage equals described the high voltage with voltage domain, the first testing circuit that triggers described the first chip detects that described transmission-line voltage equals after the high voltage of described the first voltage domain, output low level.
According to the transmitted in both directions interface conversion circuit described in the utility model preferred embodiment, when described the first chip is during to described the 3rd chip transmission of data, if signal corresponding to described data is high level, described the 3rd switch conduction, to make the high voltage of described transmission-line voltage higher than described tertiary voltage territory, trigger described the 3rd chip detection after the high voltage of described transmission-line voltage higher than described tertiary voltage territory, output high level; If described downstream signal is low level, described the 4th switch conduction, to make described transmission-line voltage equal the high voltage in described tertiary voltage territory, trigger described the 3rd chip detection and equal to described transmission-line voltage after the high voltage in described tertiary voltage territory, output low level.
In the time that described the first chip receives the data of described the 3rd chip transmission, if signal corresponding to described data is high level, described transmission-line voltage is lower than the low-voltage of described the first voltage domain, trigger described the first chip detection after the low-voltage of described transmission-line voltage lower than described the first voltage domain, output high level; If signal corresponding to described data is low level, described transmission-line voltage equals the low-voltage of described the first voltage domain, and the first testing circuit that triggers described the first chip detects that transmission-line voltage equals after the low-voltage of described the first voltage domain, output low level.
Second aspect, the utility model embodiment provides a kind of transmitted in both directions interface conversion circuit, and it comprises:
First interface unit, described first interface unit is arranged on the first chip, described the first chip operation is at the first voltage domain, and described first interface unit further comprises: the first electric current is to voltage conversion circuit, the first voltage to current converter circuit and the first testing circuit; Described the first electric current comprises at least one diode to voltage conversion circuit, described the first voltage comprises the first switch, second switch and the first current source to current converter circuit, described the first testing circuit comprises the first comparator, the first input end of described the first comparator connects the high-pressure side of described the first voltage domain, its second input connects transmission line
The second interface unit, described the second interface unit is arranged on the second chip, and described the second chip operation is in second voltage territory, and it comprises that the second electric current is to voltage conversion circuit, second voltage to current converter circuit, and the second testing circuit;
Described the second electric current comprises at least one diode to voltage conversion circuit, described second voltage comprises the 3rd switch, the 4th switch and the second current source to current converter circuit, described the second testing circuit comprises the second comparator, the first input end of described the second comparator connects the low-pressure end in described second voltage territory, its second input connects transmission line, wherein the low-pressure end in second voltage territory and the first voltage with high-pressure side be connected.
According to the transmitted in both directions interface conversion circuit described in the utility model preferred embodiment, in described first interface unit, described at least one first diode is multiple diodes, each diode head and the tail successively series connection form the first diode string, one end of the first switch in described first interface unit connects the anode of an outermost diode of the first diode string, the current input terminal of another termination the first current source of the first switch, the current output terminal of the first current source connects the low-pressure end of the first voltage domain, the negative electrode of an outermost diode of the first diode string connects the high-pressure side of the first voltage domain, one end of second switch connects the high-pressure side of the first voltage domain, the other end connects the common node of the first switch and described the first diode string, the second input of the first comparator connects the first switch, the node that second switch is connected jointly with the first diode, this node is connected with the transmission ends of the second interface unit as the transmission ends of first interface unit,
Described at least one diode is a diode, this diode is the first diode, the anode of this first diode of one termination of the first switch in described first interface unit, the current input terminal of another termination the first current source of the first switch, the current output terminal of the first current source connects the low-pressure end of the first voltage domain, the negative electrode of outermost one of them first diode of the first diode string connects the high-pressure side of the first voltage domain, one end of second switch connects the high-pressure side of the first voltage domain, the other end connects the intermediate node of the first switch and the first diode string, the second input of the first comparator connects the first switch, the node that second switch is connected jointly with the first diode, this node is connected with the transmission ends of the second interface unit as the transmission ends of first interface unit,
In described the second interface unit, described at least one first diode is multiple diodes, each diode head and the tail successively series connection form the second diode string, the negative electrode of an outermost diode of one termination the second diode string of the 3rd switch in described the second interface unit, the current output terminal of another termination the second current source of the 3rd switch, the current input terminal of the second current source connects the high-pressure side in second voltage territory, the low-pressure end in the anodic bonding second voltage territory of outermost second diode of the second diode string, one end of the 4th switch connects the low-pressure end in second voltage territory, the other end connects the common node of the 3rd switch and the second diode string, the second input of the second comparator connects the 3rd switch, the node that the 4th switch is connected jointly with the second diode, this node is connected with the transmission ends of first interface unit as the transmission ends of the second interface unit.
Described the second electric current is in voltage conversion circuit, described at least one first diode is a diode, this diode is the second diode, the negative electrode of one termination the second diode of the 3rd switch in described the second interface unit, the current output terminal of another termination the second current source of the 3rd switch, the current input terminal of the second current source connects the high-pressure side in second voltage territory, the low-pressure end in the anodic bonding second voltage territory of the second diode, one end of the 4th switch connects the low-pressure end in second voltage territory, the other end connects the negative electrode of the second diode, the second input of the second comparator connects the 3rd switch, the node that the 4th switch is connected jointly with the second diode, this node is connected with the transmission ends of first interface unit as the transmission ends of the second interface unit.
According to the transmitted in both directions interface conversion circuit described in the utility model preferred embodiment, when described first interface unit sends data to the second interface unit, the 3rd switch in the second interface unit and the 4th switch are always in cut-off state, conducting or the cut-off of Data Control the first switch sending as required, control the contrary of the conducting of second switch or cut-off state and the first switch, now the comparative result of the second comparator output is exactly the data that the second interface unit receives simultaneously;
When described the second interface unit sends data to described first interface unit, the first switch in described first interface unit and second switch are always in cut-off state, conducting or the cut-off of Data Control the 3rd switch sending as required, control the contrary of the conducting of the 4th switch or cut-off state and the 3rd switch, now the comparative result of the first comparator output is exactly the data that first interface unit receives simultaneously.
The bidirectional interface change-over circuit that has adopted the utility model embodiment to provide, by change-over circuit between electric current and voltage and the comparator as voltage detecting circuit are set, can realize same holding wire, carries out signal transmission between two voltage domains.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the utility model embodiment, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the module frame chart of a kind of embodiment of the transmitted in both directions interface conversion circuit that provides of the utility model embodiment;
Fig. 2 is the circuit theory of a kind of embodiment of the transmitted in both directions interface conversion circuit that provides of the utility model embodiment;
Fig. 3 is the circuit theory diagrams of the first modular converter in the transmitted in both directions interface conversion circuit that provides of the utility model embodiment;
Fig. 4 is the circuit diagram of a kind of application examples of the transmitted in both directions interface conversion circuit that provides of the utility model embodiment;
Fig. 5 is the circuit diagram of the another kind of application examples of the transmitted in both directions interface conversion circuit that provides of the utility model embodiment.
Embodiment
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
As shown in Figure 1, the utility model embodiment provides a kind of transmitted in both directions interface conversion circuit, described transmitted in both directions interface conversion circuit comprises the first modular converter 100, for conversion work at the first chip of the first voltage domain and be operated in the signal transmission between second chip in second voltage territory, it comprises that the first electric current is to voltage conversion circuit 101, the first voltage to current converter circuit 102, and the first testing circuit 103.
Described the first chip operation is at the first voltage domain, described the first electric current comprises at least one diode to voltage conversion circuit, described the first voltage comprises the first switch, second switch and the first current source to current converter circuit, described the first testing circuit comprises the first comparator, the first input end of described the first comparator connects the high-pressure side of described the first voltage domain, its second input connects transmission line, and described the first switch is contrary with conducting and the cut-off state of described second switch.
For conversion work is at the first chip of the first voltage domain and be operated in the signal transmission between the 3rd chip in tertiary voltage territory, in described transmitted in both directions interface conversion circuit, the second modular converter 200 can also be set, it comprises that the second electric current is to voltage conversion circuit 201, second voltage to current converter circuit 202, and the second testing circuit 203.
The second modular converter 200 is arranged on the first chip, described the second electric current comprises at least one diode to voltage conversion circuit, described second voltage comprises the 3rd switch, the 4th switch and the second current source to current converter circuit, described the second testing circuit comprises the second comparator, the first input end of described the second comparator connects the low-pressure end of described the first voltage domain, its second input connects transmission line, and described the 3rd switch is contrary with conducting and the cut-off state of described the 4th switch.
As shown in Figure 2, described the first electric current comprises at least one diode to voltage conversion circuit 102, in a kind of embodiment, can only include a diode, described the first voltage comprises the first switch T1 to current converter circuit 101, second switch T1B and the first current source I1, described first switch T1 one end connects described the first current source I1, the other end connects one end of described second switch T1B, the other end of described second switch T1B connects the high voltage end of described the first chip, when described the first switch T1 conducting, described second switch T1B cut-off, when described second switch T1B conducting, described the first switch T1 cut-off, described the first testing circuit 103 comprises the one one comparator C MP1, the positive input terminal of described the first comparator C MP1 connects the high voltage end of described the first chip, its negative input end connects transmission line and described first, second switch T1, T1B and described the first electric current are to the common node of voltage conversion circuit 102.
When the first electric current is when only comprising a diode in voltage conversion circuit, the anodic bonding of diode connects the common node of stating first, second switch (T1, T1B), and negative electrode connects the high voltage end of described the first chip.
Take Fig. 3 as example, described the first electric current comprises a diode to voltage conversion circuit, this diode is the first diode, the anode of termination first diode of the first switch T1, the current input terminal of another termination the first current source of the first switch T1, the current output terminal of the first current source connects the low-pressure end of the first voltage domain, the negative electrode of the first diode connects the high-pressure side of the first voltage domain, one end of second switch T1B connects the high-pressure side of the first voltage domain, the other end connects the anode of the first diode, the second input of the first comparator C MP1 connects the first switch T1, the node that second switch T1B is connected jointly with the first diode, this node is connected with the transmission ends of the second chip as the transmission ends of chip, institute's the second chip operation is in second voltage territory, the low-voltage in described second voltage territory equates with the high voltage of described the first voltage domain.
In the time that the first electric current comprises multiple diode to voltage transformation module, each diode head and the tail successively series connection form the first diode string, the one end of the first switch T1 in described first interface unit connects the anode of an outermost diode of the first diode string, the current input terminal of another termination the first current source I1 of the first switch T1, the current output terminal of the first current source I1 connects the low-pressure end of the first voltage domain, the negative electrode of an outermost diode of the first diode string connects the high-pressure side of the first voltage domain, one end of second switch T1B connects the high-pressure side of the first voltage domain, the other end connects the common node of the first switch T1 and described the first diode string, the second input of the first comparator C MP1 connects the first switch T1, the node that second switch T1B is connected jointly with the first diode string, this node is connected with the transmission ends of the second chip as the transmission ends of chip.
In described the second modular converter 200, described the second electric current comprises at least one diode to voltage conversion circuit 202, in a kind of embodiment, can only include a diode.Described second voltage comprises the 3rd switch T2 to current converter circuit 201, the 4th switch T2B and the second current source I2, described the 3rd switch T2 one end connects described the second current source I2, the other end connects one end of described the 4th switch T2B, the other end of described the 4th switch T2B connects the low-voltage end of described the first chip, when described the 3rd switch T2 conducting, described the 4th switch T2B cut-off, when described the 4th switch T2B conducting, described the 3rd switch T2 cut-off, described the second testing circuit 203 comprises one second comparator C MP2, the positive input terminal of described the second comparator C MP2 connects the low tension potential source of described the first voltage domain, its negative input end connects transmission line and the described the 3rd, the 4th switch T2, T2B and described the second electric current are to the common node of voltage conversion circuit 202.
When described the second electric current only comprises a diode to voltage conversion circuit, the low-voltage end of the first chip described in the anodic bonding of this diode, negative electrode connects states the 3rd, the 4th switch (T2, T2B) and described the first electric current common node to voltage conversion circuit.In the time comprising multiple diode, multiple diode series connection.
Described the first voltage is respectively a metal-oxide-semiconductor to first, second switch described in current converter circuit 101, be specially PMOS or NMOS, can arrange according to the actual requirements, but need to guarantee same level signal time, can only there is a conducting, for example, in the utility model embodiment, the first switch is NMOS pipe, second switch is PMOS pipe, in the time that signal is high level, T1 conducting, T1B cut-off.
Similarly, described the second electric current comprises a diode to voltage conversion circuit, this diode is the second diode, the negative electrode of termination second diode of the 3rd switch T2 in described the second modular converter, the current output terminal of another termination the second current source of the 3rd switch T2, the current input terminal of the second current source connects the high-pressure side in second voltage territory, the low-pressure end of anodic bonding first voltage domain of the second diode, one end of the 4th switch T2B connects the low-pressure end of the first voltage domain, the other end connects the negative electrode of the second diode, the second input of the second comparator C MP2 connects the 3rd switch T2, the node that the 4th switch T2B is connected jointly with the second diode, this node is connected with the transmission ends of the 3rd chip as the transmission ends of the first chip, described the 3rd chip operation is in tertiary voltage territory, the high voltage in described tertiary voltage territory equates with the low-voltage of described the first voltage domain.
In the time that the second electric current comprises multiple diode to voltage transformation module, each diode head and the tail successively series connection form the second diode string, the negative electrode of an outermost diode of a termination second diode string of the 3rd switch T2 in described the second interface unit, the current output terminal of another termination the second current source of the 3rd switch T2, the current input terminal of the second current source connects the high-pressure side in second voltage territory, the low-pressure end in the anodic bonding second voltage territory of outermost second diode of the second diode string, one end of the 4th switch T2B connects the low-pressure end in second voltage territory, the other end connects the common node of the 3rd switch T2 and the second diode string, the second input of the second comparator C MP2 connects the 3rd switch T2, the node that the 4th switch T2B is connected jointly with the second diode string, this node is connected with the transmission ends of the 3rd chip as the transmission ends of the first chip.
Described second voltage is respectively a metal-oxide-semiconductor to the 3rd, the 4th switch of current converter circuit 201, be specially PMOS or NMOS, can arrange according to the actual requirements, but need to guarantee same level signal time, can only there is a conducting, for example, in the utility model embodiment, the first switch is PMOS pipe, second switch is NMOS pipe, in the time that signal is high level, make T2 conducting by reverse signal, T2B cut-off.
Fig. 4 is the circuit connection diagram of a kind of application examples of the transmitted in both directions interface conversion circuit that provides of the utility model embodiment, now, this interface conversion circuit, what realize is to be operated in the first chip 10 of first voltage domain V1～V2 to transmit with the signal being operated between the second chip 20 of second voltage territory V3～V4, the first chip 10 and the second chip 20 are all provided with the transmitted in both directions interface conversion circuit that the utility model embodiment provides, carry out signal when mutual at the first chip 10 and the second chip 20, only has the second modular converter work in the first modular converter and second chip 20 of the first chip 10, the first modular converter in the second modular converter in the first chip 10 and the second chip 20 is not worked.
When described the first chip is during to described the second chip transmission of data, if signal corresponding to described data is high level, the first switch conduction in described the first chip, to make the low-voltage of described transmission-line voltage lower than described second voltage territory, trigger described the second chip detection after the low-voltage of described transmission-line voltage lower than described second voltage territory, output high level; If signal corresponding to described data is low level, described second switch conducting, to make described transmission-line voltage equal the low-voltage in described second voltage territory, trigger described the second chip detection and equal to described transmission-line voltage after the low-voltage in described second voltage territory, output low level.
In the time stating the first chip and receive the data of described the second chip transmission, if signal corresponding to described data is high level, described transmission-line voltage is higher than the high voltage of described the first voltage domain, trigger described the first chip detection after the high voltage of described transmission-line voltage higher than described the first voltage domain, output high level; If signal corresponding to described data is low level, described transmission-line voltage equals described the high voltage with voltage domain, the first testing circuit that triggers described the first chip detects that described transmission-line voltage equals after the high voltage of described the first voltage domain, output low level.
More specifically, when described the first chip 10 is during in first signal transmission state, namely, described the first chip 10 transmits data to described the second chip 20, now the first chip 10 is transmitting terminal, the second chip 20 is receiving terminal, if signal corresponding to described data is high level, the first switch T1 conducting of described the first chip 10, switch in the second modular converter of described the second chip 20 all ends, electric current is from the second electric current of described second chip 20 of low-voltage port V3 process of described the second chip 20 to voltage conversion circuit, transmission line, the first voltage of described the first chip 10 is to current converter circuit T1, I1, flow to V1, to make the low-voltage V3 of described transmission-line voltage lower than described second voltage territory, the the second comparator C MP2 triggering in described the second chip detects after the low-voltage V3 of described transmission-line voltage lower than described second voltage territory, output high level, if signal corresponding to described data is low level, the second switch T1B conducting of described the first chip 10, to make described transmission-line voltage equal the low-voltage V3 in described second voltage territory, the the second comparator C MP2 triggering in described the second chip detects that described transmission-line voltage equals after the low-voltage V3 in described second voltage territory, output low level.
When described the first chip is during in secondary signal transmission state, described the first chip 10 is receiving terminal, the second chip 20 is transmitting terminal, described the first chip 10 receives the data that described the second chip 20 transmits, if signal corresponding to described data is high level, the 3rd switch T2 conducting in described the second chip 20, switch in the first modular converter 100 in the first chip all ends, electric current is from the high voltage end V4 of described the second chip 20, through the second voltage of described the second chip 20 to current source I2 and the 3rd switch T2 in current converter circuit, transmission line, the first electric current of described the first chip 10 is to the voltage conversion circuit stream 102 high voltage end V2 to the first chip, described transmission-line voltage is higher than the high voltage V2 of described the first voltage domain, the the first comparator C MP1 that triggers described the first chip detects after the high voltage V2 of described transmission-line voltage higher than described the first voltage domain, output high level, if signal corresponding to described data is low level, the 4th switch T2B conducting of described the second chip 20, described transmission-line voltage equals the high voltage V2 of described the first voltage domain and the low-voltage V3 of described the second chip, the first testing circuit that triggers described the first chip detects that described transmission-line voltage equals after the high voltage V2 of described the first voltage domain, output low level.
As shown in Figure 5, Fig. 5 is the circuit connection diagram of the another kind of application examples of the transmitted in both directions interface conversion circuit that provides of the utility model embodiment, now, this interface conversion circuit, what realize is to be operated in the first chip 10 of first voltage domain V3～V4 to transmit with the signal being operated between the 3rd chip 30 of tertiary voltage territory V1～V2, the first chip 10 and the 3rd chip 30 are all provided with the transmitted in both directions interface conversion circuit that the utility model embodiment provides, carry out signal when mutual at the first chip 10 and the 3rd chip 30, only has the first modular converter work of the second modular converter and the 3rd chip 30 of the first chip 10, the second modular converter of the first modular converter of the first chip 10 and the 3rd chip 30 is not worked.
When described the first chip is during to described the 3rd chip transmission of data, if signal corresponding to described data is high level, described the 3rd switch conduction, to make the high voltage of described transmission-line voltage higher than described tertiary voltage territory, trigger described the 3rd chip detection after the high voltage of described transmission-line voltage higher than described tertiary voltage territory, output high level; If described downstream signal is low level, described the 4th switch conduction, to make described transmission-line voltage equal the high voltage in described tertiary voltage territory, trigger described the 3rd chip detection and equal to described transmission-line voltage after the high voltage in described tertiary voltage territory, output low level.
In the time that described the first chip receives the data of described the 3rd chip transmission, if signal corresponding to described data is high level, described transmission-line voltage is lower than the low-voltage of described the first voltage domain, trigger described the first chip detection after the low-voltage of described transmission-line voltage lower than described the first voltage domain, output high level; If signal corresponding to described data is low level, described transmission-line voltage equals the low-voltage of described the first voltage domain, and the first testing circuit that triggers described the first chip detects that transmission-line voltage equals after the low-voltage of described the first voltage domain, output low level.
When described the first chip 10 is during in the 3rd transmission state signal, described the first chip 10 transmits data to described the 3rd chip 30, the first chip 10 is transmitting terminal, the 3rd chip 30 is receiving terminal, if signal corresponding to described data is high level, described the 3rd switch T2 conducting, electric current is from the high voltage end V4 of described the first chip 10, the second voltage of described the first chip 10 is to the second current source I2 in current converter circuit 202, the 3rd switch T2, transmission line, the first electric current of described the 3rd chip 30 is to voltage conversion circuit 102, flow to the high voltage end V2 of the 3rd chip, due to the clamping action of diode, make the high voltage V2 of described transmission-line voltage higher than described tertiary voltage territory, the the first comparator C MP1 that triggers described the 3rd chip detects after the high voltage V2 of described transmission-line voltage higher than described tertiary voltage territory, output high level, if signal corresponding to described data is low level, the 4th switch T2B conducting of described the first chip 10, to make described transmission-line voltage equal the high voltage V2 in described tertiary voltage territory, trigger described the 3rd chip detection and equal to described transmission-line voltage after the high voltage V2 in described tertiary voltage territory, output low level.
When described the first chip 10 is during in the 4th transmission state signal, described the first chip 10 receives the data that described the 3rd chip 30 transmits, now the first chip 10 is receiving terminal, the 3rd chip 30 is transmitting terminal, if signal corresponding to described data is high level, the first switch T1 conducting of described the 3rd chip 30, electric current is from the second electric current of described first chip 10 of low-voltage end V3 process of described the first chip 10 to voltage conversion circuit 202, transmission line, the first voltage of described the 3rd chip 30 is to the first switch T1 in current converter circuit 101, the first current source I1, flow to the ground voltage end V1 of the first chip, described transmission-line voltage is lower than the low-voltage of described the first voltage domain, trigger described the first chip detection after the low-voltage of described transmission-line voltage lower than described the first voltage domain, output high level, if signal corresponding to described data is low level, the T1B conducting of described the 3rd chip 30, described transmission-line voltage equals the low-voltage of described the first voltage domain, the first testing circuit that triggers described the first chip detects that transmission-line voltage equals after the low-voltage of described the first voltage domain, output low level.
In addition, the utility model can also be described with another kind of form, that is to say, the utility model embodiment can also provide another kind of transmitted in both directions interface conversion circuit, this transmitted in both directions interface conversion circuit, comprise the second modular converter in the second chip, and the first modular converter in the first chip, or, the first modular converter in the second modular converter in the first chip and the 3rd chip, principle is similar, and the present embodiment only, take the embodiment shown in Fig. 4 as example, describes.
The transmitted in both directions interface conversion circuit that the present embodiment provides, comprise first interface unit (being equivalent to the first modular converter in the first chip), described first interface unit is arranged on the first chip 10, described first interface unit, further comprise: the first electric current is to voltage conversion circuit, the first voltage to current converter circuit, and the first testing circuit; Described the first electric current comprises at least one diode to voltage conversion circuit, described the first electric current comprises at least one diode to voltage conversion circuit, described the first voltage comprises the first switch, second switch and the first current source to current converter circuit, described the first testing circuit comprises the first comparator, the first input end of described the first comparator is inputted the high-pressure side of described the first voltage domain, its second input connects transmission line
The second interface unit (being equivalent to the second modular converter of the second chip), described the second interface unit is arranged on the second chip 20, described the second chip 20 is operated in the second electric current described in second voltage territory and comprises at least one diode to voltage conversion circuit, described second voltage comprises the 3rd switch to current converter circuit, the 4th switch and the second current source, described the second testing circuit comprises the second comparator, the first input end of described the second comparator connects the low-pressure end in described second voltage territory, its second input connects transmission line, wherein the low-pressure end in second voltage territory and the first voltage with high-pressure side be connected.
Similar with aforesaid embodiment, described the first electric current can only comprise a diode to voltage conversion circuit, this diode is the first diode, the anode of one termination the first diode of the first switch in described first interface unit, the current input terminal of another termination the first current source of the first switch, the current output terminal of the first current source connects the low-pressure end of the first voltage domain, the negative electrode of the first diode connects the high-pressure side of the first voltage domain, one end of second switch connects the high-pressure side of the first voltage domain, the other end connects the anode of the first diode, the second input of the first comparator connects the first switch, the node that second switch is connected jointly with the first diode, this node is connected with the transmission ends of the second interface unit as the transmission ends of first interface unit,
Described the first electric current also can comprise two or more diodes to voltage conversion circuit, each diode head and the tail successively series connection form the first diode string, one end of the first switch in described first interface unit connects the anode of an outermost diode of the first diode string, the current input terminal of another termination the first current source of the first switch, the current output terminal of the first current source connects the low-pressure end of the first voltage domain, the negative electrode of an outermost diode of the first diode string connects the high-pressure side of the first voltage domain, one end of second switch connects the high-pressure side of the first voltage domain, the other end connects the common node of the first switch and described the first diode string, the second input of the first comparator connects the first switch, the node that second switch is connected jointly with the first diode string, this node is connected with the transmission ends of the second interface unit as the transmission ends of first interface unit.
Described the second electric current can comprise a diode to voltage conversion circuit, this diode is the second diode, the negative electrode of one termination the second diode of the 3rd switch in described the second interface unit, the current output terminal of another termination the second current source of the 3rd switch, the current input terminal of the second current source connects the high-pressure side in second voltage territory, the low-pressure end in the anodic bonding second voltage territory of the second diode, one end of the 4th switch connects the low-pressure end in second voltage territory, the other end connects the negative electrode of the second diode, the second input of the second comparator connects the 3rd switch, the node that the 4th switch is connected jointly with the second diode, this node is connected with the transmission ends of first interface unit as the transmission ends of the second interface unit.
Described in described the second interface unit, the second electric current also can comprise two or more diodes to voltage conversion circuit, each diode head and the tail successively series connection form the second diode string, the negative electrode of an outermost diode of one termination the second diode string of the 3rd switch in described the second interface unit, the current output terminal of another termination the second current source of the 3rd switch, the current input terminal of the second current source connects the high-pressure side in second voltage territory, the low-pressure end in the anodic bonding second voltage territory of outermost second diode of the second diode string, one end of the 4th switch connects the low-pressure end in second voltage territory, the other end connects the common node of the 3rd switch and the second diode string, the second input of the second comparator connects the 3rd switch, the node that the 4th switch is connected jointly with the second diode string, this node is connected with the transmission ends of first interface unit as the transmission ends of the second interface unit.
When described first interface unit sends data to the second interface unit, the 3rd switch in the second interface unit and the 4th switch are always in cut-off state, conducting or the cut-off of Data Control the first switch sending as required, control the contrary of the conducting of second switch or cut-off state and the first switch, now the comparative result of the second comparator output is exactly the data that the second interface unit receives simultaneously;
The first switch in described first interface unit and second switch are always in cut-off state, conducting or the cut-off of Data Control the 3rd switch sending as required, control the contrary of the conducting of the 4th switch or cut-off state and the 3rd switch, now the comparative result of the first comparator output is exactly the data that first interface unit receives simultaneously.
About the description of this embodiment, can, with reference to aforesaid embodiment, seldom repeat.
The bidirectional interface change-over circuit that has adopted the utility model embodiment to provide, by change-over circuit between electric current and voltage and the comparator as voltage detecting circuit are set, can realize same holding wire, carries out signal transmission between two voltage domains.
Above-described embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only embodiment of the present utility model; and be not used in limit protection range of the present utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (10)
1. a transmitted in both directions interface conversion circuit, is characterized in that, comprising:
The first modular converter, is arranged on the first chip, and described the first chip operation is at the first voltage domain, and described the first modular converter further comprises: the first electric current is to voltage conversion circuit, the first voltage to current converter circuit and the first testing circuit; Described the first electric current comprises at least one diode to voltage conversion circuit, described the first voltage comprises the first switch, second switch and the first current source to current converter circuit, described the first testing circuit comprises the first comparator, the first input end of described the first comparator connects the high-pressure side of described the first voltage domain, its second input connects transmission line, and described the first switch is contrary with conducting and the cut-off state of described second switch.
2. transmitted in both directions interface conversion circuit as claimed in claim 1, it is characterized in that, described the first electric current comprises a diode to voltage conversion circuit, this diode is the first diode, the anode of one termination the first diode of the first switch in described modular converter, the current input terminal of another termination the first current source of the first switch, the current output terminal of the first current source connects the low-pressure end of the first voltage domain, the negative electrode of the first diode connects the high-pressure side of the first voltage domain, one end of second switch connects the high-pressure side of the first voltage domain, the other end connects the anode of the first diode, the second input of the first comparator connects the first switch, the node that second switch is connected jointly with the first diode, this node is connected with the transmission ends of the second chip as the transmission ends of chip, institute's the second chip operation is in second voltage territory, the low-voltage in described second voltage territory equates with the high voltage of described the first voltage domain.
3. the transmitted in both directions interface conversion circuit as described in claim 1 to 2 any one, is characterized in that, also comprises:
The second modular converter, is arranged on the first chip, and it comprises that the second electric current is to voltage conversion circuit, second voltage to current converter circuit, and the second testing circuit; Described the second electric current comprises at least one diode to voltage conversion circuit, described second voltage comprises the 3rd switch, the 4th switch and the second current source to current converter circuit, described the second testing circuit comprises the second comparator, the first input end of described the second comparator connects the low-pressure end of described the first voltage domain, its second input connects transmission line, and described the 3rd switch is contrary with conducting and the cut-off state of described the 4th switch.
4. transmitted in both directions interface conversion circuit as claimed in claim 3, is characterized in that,
Described the second electric current comprises a diode to voltage conversion circuit, this diode is the second diode, the negative electrode of one termination the second diode of the 3rd switch in described modular converter, the current output terminal of another termination the second current source of the 3rd switch, the current input terminal of the second current source connects the high-pressure side in second voltage territory, the low-pressure end of anodic bonding first voltage domain of the second diode, one end of the 4th switch connects the low-pressure end of the first voltage domain, the other end connects the negative electrode of the second diode, the second input of the second comparator connects the 3rd switch, the node that the 4th switch is connected jointly with the second diode, this node is connected with the transmission ends of the 3rd chip as the transmission ends of the first chip, described the 3rd chip operation is in tertiary voltage territory, the high voltage in described tertiary voltage territory equates with the low-voltage of described the first voltage domain.
5. transmitted in both directions interface conversion circuit as claimed in claim 1 or 2, it is characterized in that, when described the first chip is during to described the second chip transmission of data, if signal corresponding to described data is high level, the first switch conduction in described the first chip, to make the low-voltage of described transmission-line voltage lower than described second voltage territory, trigger described the second chip detection after the low-voltage of described transmission-line voltage lower than described second voltage territory, output high level; If signal corresponding to described data is low level, described second switch conducting, to make described transmission-line voltage equal the low-voltage in described second voltage territory, trigger described the second chip detection and equal to described transmission-line voltage after the low-voltage in described second voltage territory, output low level.
6. transmitted in both directions interface conversion circuit as claimed in claim 1 or 2, it is characterized in that, in the time stating the first chip and receive the data of described the second chip transmission, if signal corresponding to described data is high level, described transmission-line voltage is higher than the high voltage of described the first voltage domain, trigger described the first chip detection after the high voltage of described transmission-line voltage higher than described the first voltage domain, output high level; If signal corresponding to described data is low level, described transmission-line voltage equals the high voltage of described the first voltage domain, the first testing circuit that triggers described the first chip detects that described transmission-line voltage equals after the high voltage of described the first voltage domain, output low level.
7. transmitted in both directions interface conversion circuit as claimed in claim 4, it is characterized in that, when described the first chip is during to described the 3rd chip transmission of data, if signal corresponding to described data is high level, described the 3rd switch conduction, to make the high voltage of described transmission-line voltage higher than described tertiary voltage territory, trigger described the 3rd chip detection after the high voltage of described transmission-line voltage higher than described tertiary voltage territory, output high level; If described downstream signal is low level, described the 4th switch conduction, to make described transmission-line voltage equal the high voltage in described tertiary voltage territory, triggers described the 3rd chip detection and equals to described transmission-line voltage after the high voltage in described tertiary voltage territory, output low level
In the time that described the first chip receives the data of described the 3rd chip transmission, if signal corresponding to described data is high level, described transmission-line voltage is lower than the low-voltage of described the first voltage domain, trigger described the first chip detection after the low-voltage of described transmission-line voltage lower than described the first voltage domain, output high level; If signal corresponding to described data is low level, described transmission-line voltage equals the low-voltage of described the first voltage domain, and the first testing circuit that triggers described the first chip detects that transmission-line voltage equals after the low-voltage of described the first voltage domain, output low level.
8. a transmitted in both directions interface conversion circuit, is characterized in that, comprising:
First interface unit, described first interface unit is arranged on the first chip, described the first chip operation is at the first voltage domain, and described first interface unit further comprises: the first electric current is to voltage conversion circuit, the first voltage to current converter circuit and the first testing circuit; Described the first electric current comprises at least one diode to voltage conversion circuit, described the first voltage comprises the first switch, second switch and the first current source to current converter circuit, described the first testing circuit comprises the first comparator, the first input end of described the first comparator connects the high-pressure side of described the first voltage domain, its second input connects transmission line
The second interface unit, described the second interface unit is arranged on the second chip, and described the second chip operation is in second voltage territory, and it comprises that the second electric current is to voltage conversion circuit, second voltage to current converter circuit, and the second testing circuit;
Described the second electric current comprises at least one diode to voltage conversion circuit, described second voltage comprises the 3rd switch, the 4th switch and the second current source to current converter circuit, described the second testing circuit comprises the second comparator, the first input end of described the second comparator connects the low-pressure end in described second voltage territory, its second input connects transmission line, and wherein the low-pressure end in second voltage territory is connected with the high-pressure side of the first voltage.
9. transmitted in both directions interface conversion circuit as claimed in claim 8, it is characterized in that, in described first interface unit, described at least one first diode is multiple diodes, each diode head and the tail successively series connection form the first diode string, one end of the first switch in described first interface unit connects the anode of an outermost diode of the first diode string, the current input terminal of another termination the first current source of the first switch, the current output terminal of the first current source connects the low-pressure end of the first voltage domain, the negative electrode of an outermost diode of the first diode string connects the high-pressure side of the first voltage domain, one end of second switch connects the high-pressure side of the first voltage domain, the other end connects the common node of the first switch and described the first diode string, the second input of the first comparator connects the first switch, the node that second switch is connected jointly with the first diode string, this node is connected with the transmission ends of the second interface unit as the transmission ends of first interface unit, or, described at least one diode is a diode, this diode is the first diode, the anode of this first diode of one termination of the first switch in described first interface unit, the current input terminal of another termination the first current source of the first switch, the current output terminal of the first current source connects the low-pressure end of the first voltage domain, the negative electrode of outermost one of them first diode of the first diode string connects the high-pressure side of the first voltage domain, one end of second switch connects the high-pressure side of the first voltage domain, the other end connects the intermediate node of the first switch and the first diode string, the second input of the first comparator connects the first switch, the node that second switch is connected jointly with the first diode, this node is connected with the transmission ends of the second interface unit as the transmission ends of first interface unit,
In described the second interface unit, described at least one first diode is multiple diodes, each diode head and the tail successively series connection form the second diode string, the negative electrode of an outermost diode of one termination the second diode string of the 3rd switch in described the second interface unit, the current output terminal of another termination the second current source of the 3rd switch, the current input terminal of the second current source connects the high-pressure side in second voltage territory, the low-pressure end in the anodic bonding second voltage territory of outermost second diode of the second diode string, one end of the 4th switch connects the low-pressure end in second voltage territory, the other end connects the common node of the 3rd switch and the second diode string, the second input of the second comparator connects the 3rd switch, the node that the 4th switch is connected jointly with the second diode string, this node is connected with the transmission ends of first interface unit as the transmission ends of the second interface unit, or, described at least one first diode is a diode, this diode is the second diode, the negative electrode of one termination the second diode of the 3rd switch in described the second interface unit, the current output terminal of another termination the second current source of the 3rd switch, the current input terminal of the second current source connects the high-pressure side in second voltage territory, the low-pressure end in the anodic bonding second voltage territory of the second diode, one end of the 4th switch connects the low-pressure end in second voltage territory, the other end connects the negative electrode of the second diode, the second input of the second comparator connects the 3rd switch, the node that the 4th switch is connected jointly with the second diode, this node is connected with the transmission ends of first interface unit as the transmission ends of the second interface unit.
10. transmitted in both directions interface conversion circuit as claimed in claim 9, is characterized in that,
When described first interface unit sends data to the second interface unit, the 3rd switch in the second interface unit and the 4th switch are always in cut-off state, conducting or the cut-off of Data Control the first switch sending as required, control the contrary of the conducting of second switch or cut-off state and the first switch, now the comparative result of the second comparator output is exactly the data that the second interface unit receives simultaneously;
When described the second interface unit sends data to described first interface unit, the first switch in described first interface unit and second switch are always in cut-off state, conducting or the cut-off of Data Control the 3rd switch sending as required, control the contrary of the conducting of the 4th switch or cut-off state and the 3rd switch, now the comparative result of the first comparator output is exactly the data that first interface unit receives simultaneously.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320783812.9U CN203632640U (en) | 2013-11-27 | 2013-11-27 | Two-way transmission interface converting circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320783812.9U CN203632640U (en) | 2013-11-27 | 2013-11-27 | Two-way transmission interface converting circuit |
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| CN203632640U true CN203632640U (en) | 2014-06-04 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103647544A (en) * | 2013-11-27 | 2014-03-19 | 无锡中星微电子有限公司 | Two-way transmission interface conversion circuit |
| CN104618677A (en) * | 2015-02-09 | 2015-05-13 | 李鑫建 | TMDS (transition minimized differential signaling) bidirectional transmission system of signal |
-
2013
- 2013-11-27 CN CN201320783812.9U patent/CN203632640U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103647544A (en) * | 2013-11-27 | 2014-03-19 | 无锡中星微电子有限公司 | Two-way transmission interface conversion circuit |
| CN103647544B (en) * | 2013-11-27 | 2017-07-04 | 无锡中感微电子股份有限公司 | A kind of two-way transmission interface conversion circuit |
| CN104618677A (en) * | 2015-02-09 | 2015-05-13 | 李鑫建 | TMDS (transition minimized differential signaling) bidirectional transmission system of signal |
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Address after: A 530 Taihu international science and Technology Park building 214135 Qingyuan Road in Jiangsu province Wuxi City District 10 layer Patentee after: WUXI ZHONGGAN MICROELECTRONIC CO., LTD. Address before: A 530 Taihu international science and Technology Park building 214135 Qingyuan Road in Jiangsu province Wuxi City District 10 layer Patentee before: Wuxi Vimicro Co., Ltd. |
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Granted publication date: 20140604 Termination date: 20171127 |