CN203606464U - High-power semiconductor laser device reliability detection system - Google Patents
High-power semiconductor laser device reliability detection system Download PDFInfo
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- CN203606464U CN203606464U CN201320802753.5U CN201320802753U CN203606464U CN 203606464 U CN203606464 U CN 203606464U CN 201320802753 U CN201320802753 U CN 201320802753U CN 203606464 U CN203606464 U CN 203606464U
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- laser device
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Abstract
The utility model provides a high-power semiconductor laser device reliability detection system, and belongs to the field of a high-power semiconductor laser device reliability detection device. The system comprises a driving power supply, a test box, an amplifier, a data acquisition and processing unit, a parameter extraction unit, a storage unit and a printing and display unit. The high-power semiconductor laser device reliability detection system is high in accuracy, reliable in performance, small and exquisite in volume and convenient to carry so that requirements for reliability detection of a high-power semiconductor laser device in various environments and conditions can be conveniently and efficiently met. Besides, the reliability detection system also has advantages of being simple and practical in structure, convenient to operate, low in cost, convenient for promotion and popularization, etc.
Description
Technical field
The utility model belongs to high power semiconductor laser device reliability pick-up unit field, is specifically related to a kind of high power semiconductor laser device reliability detection system.
Background technology
There is defect, the generation of the catabiosis such as surface leakage or p-n junction degeneration occur in the chamber face of laser instrument, all can make the high-power semiconductor laser under steady operation cause superfluous electrical noise.These defects raw long ﹑ in the ageing process of laser instrument climbs, and the quantum efficiency that causes device is reduced, and threshold current raises, and further accelerates the degeneration of device.Therefore, detect and investigate the electrical noise signal at laser instrument two ends, just can be used as the important indicator that characterizes and evaluate high-power semiconductor laser functional reliability.
The existing high power semiconductor laser device reliability detection method based on walkaway is normally: the electrical noise of directly testing high-power semiconductor laser to be detected two ends, then utilize digital spectrometer to carry out data sampling analysis to the noise signal collecting, and according to its analysis result, the reliability index of tested high-power semiconductor laser is evaluated.
But, above-mentioned sampling process complex operation, the data obtained is analyzed not accurate enough, and digital spectrometer is heavy, huge, does not have a portability, therefore, researches and develops a kind of novel reliability detecting device for high-power semiconductor laser significant.
Utility model content
Generally utilize digital spectrometer to carry out data sampling analysis to the noise signal collecting in order to solve existing high power semiconductor laser device reliability detection method, its sampling process complex operation, the data obtained is analyzed not accurate enough, and digital spectrometer is heavy, huge, do not have a technical matters of portability, the utility model provides a kind of high power semiconductor laser device reliability detection system.
The technical scheme that the utility model technical solution problem is taked is as follows:
High power semiconductor laser device reliability detection system comprises driving power, testing cassete, amplifier, data acquisition process unit, parameter extraction unit, storage unit and printing and display unit; It is characterized in that, described driving power is connected with amplifier, data acquisition process unit, parameter extraction unit, storage unit and printing and display unit respectively, and is above-mentioned each unit power supply; Amplifier is connected with testing cassete, and data acquisition process unit is connected with amplifier, and parameter extraction unit is connected with data acquisition process unit, and storage unit is connected with parameter extraction unit, and printing and display unit are connected with storage unit.
The beneficial effects of the utility model are: this high power semiconductor laser device reliability detection system precision is high, dependable performance, volume is small and exquisite and be easy to carry, can meet convenient, efficiently the reliability of high-power semiconductor laser under various environmental baselines and detect demand, in addition this reliability detection system also has simple and practical, easy to operate, with low cost, the advantage such as be convenient to popularize.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of the utility model high power semiconductor laser device reliability detection system.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further details.
As shown in Figure 1, high power semiconductor laser device reliability detection system of the present utility model comprises driving power, testing cassete, amplifier, data acquisition process unit, parameter extraction unit, storage unit and printing and display unit.Driving power is connected with amplifier, data acquisition process unit, parameter extraction unit, storage unit and printing and display unit respectively, and is above-mentioned each unit power supply.Amplifier is connected with testing cassete, and data acquisition process unit is connected with amplifier, and parameter extraction unit is connected with data acquisition process unit, and storage unit is connected with parameter extraction unit, and printing and display unit are connected with storage unit.
Driving power is selected 12V accumulator, and the shell of testing cassete adopts iron frame square box, and the copper thin can of external application is as screen layer.Amplifier is selected DeltaTron2671 type prime amplifier, PCI-6014 type data collecting card is selected in data acquisition process unit, storage unit adopts association's PC, printing and display unit according to different demands, optional with computer monitor demonstration or the printer printout of use Canon.
When concrete application high power semiconductor laser device reliability detection system of the present utility model, high-power semiconductor laser sample to be tested is put into testing cassete, under the driving of driving power, high-power semiconductor laser to be tested enters steady operation, now, by amplifier to passed to by laser instrument testing cassete noise signal sample, this noise signal is exported to data acquisition process unit after amplifier is sampled and amplified, after data acquisition process unit filtering clutter signal, output signal to parameter extraction unit, parameter extraction unit utilizes compressed sensing method general in field from the signal of receiving, to extract to detect the useful signal of testing laser device reliability, and the testing result obtaining according to useful signal is exported to storage unit, cell stores testing result also sends testing result to print and display unit to, printing and display unit need to print or show testing result according to user.
High power semiconductor laser device reliability detection system precision of the present utility model is high, dependable performance, volume is small and exquisite and be easy to carry, can meet convenient, efficiently the reliability of high-power semiconductor laser under various environmental baselines and detect demand, in addition this reliability detection system also has simple and practical, easy to operate, with low cost, the advantage such as be convenient to popularize.
Claims (1)
1. high power semiconductor laser device reliability detection system, comprises driving power, testing cassete, amplifier, data acquisition process unit, parameter extraction unit, storage unit and printing and display unit; It is characterized in that, described driving power is connected with amplifier, data acquisition process unit, parameter extraction unit, storage unit and printing and display unit respectively, and is above-mentioned each unit power supply; Amplifier is connected with testing cassete, and data acquisition process unit is connected with amplifier, and parameter extraction unit is connected with data acquisition process unit, and storage unit is connected with parameter extraction unit, and printing and display unit are connected with storage unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320802753.5U CN203606464U (en) | 2013-12-09 | 2013-12-09 | High-power semiconductor laser device reliability detection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320802753.5U CN203606464U (en) | 2013-12-09 | 2013-12-09 | High-power semiconductor laser device reliability detection system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203606464U true CN203606464U (en) | 2014-05-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320802753.5U Expired - Fee Related CN203606464U (en) | 2013-12-09 | 2013-12-09 | High-power semiconductor laser device reliability detection system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203606464U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104880659A (en) * | 2015-05-15 | 2015-09-02 | 北京光电技术研究所 | Off-line test method for semiconducting lasers |
-
2013
- 2013-12-09 CN CN201320802753.5U patent/CN203606464U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104880659A (en) * | 2015-05-15 | 2015-09-02 | 北京光电技术研究所 | Off-line test method for semiconducting lasers |
| CN104880659B (en) * | 2015-05-15 | 2018-03-30 | 北京光电技术研究所 | Semiconductor laser off-line test method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140521 Termination date: 20151209 |
|
| EXPY | Termination of patent right or utility model |