CN203596801U - S waveband solid power amplifier - Google Patents
S waveband solid power amplifier Download PDFInfo
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- CN203596801U CN203596801U CN201320775690.9U CN201320775690U CN203596801U CN 203596801 U CN203596801 U CN 203596801U CN 201320775690 U CN201320775690 U CN 201320775690U CN 203596801 U CN203596801 U CN 203596801U
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- power amplifier
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- state power
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Abstract
The utility model relates to an S waveband solid power amplifier which comprises a solid power amplifier body, a power amplifier module, an antenna module and a power supply module. The power amplifier module is composed of an upper layer power amplifier module and a lower layer power amplifier module. The upper layer power amplifier module and the lower layer power amplifier module are respectively provided with a plurality of output ports connected to the antenna module. The antenna module is composed of a plurality of basic radiation bodies. The S waveband solid power amplifier is provided with heat dissipating modules. The heat dissipating modules are arranged on the left side and the right side of the solid power amplifier. High reliability of the solid power amplifier can be obtained no matter the solid power amplifier is in a high-temperature state or a low-temperature low-air-pressure state or a vibration state or a long-time working state. Moreover, fire striking, breakdown and other problems of an internal circuit of the solid power amplifier cannot occur.
Description
Technical field
The utility model relates to a kind of electronic equipment, especially a kind of S-band solid-state power amplifier.
Background technology
At present, in radar simulator equipment, transmitter unit mainly contains two kinds, TWT transmitter and solid-state amplifier transmitter, and that solid-state amplifier transmitter has is highly reliable, high stability, long-life, working band is wide, the advantages such as safety rapid, simple to operate and softly fail of starting shooting become transmitter unit in radar system gradually leading developing direction.
For solid-state amplifier transmitter, for obtaining the thousands of watts of even power stages of tens kilowatts, conventionally we adopt the synthetic method of power, the signal of multichannel lower-wattage is synthesized to needed high-power radiation signal, concrete grammar has two kinds: the one, adopt the power synthetic technique based on circuit or waveguide, utilizing the comprise network of circuit or waveguide to carry out power multiple signals synthesizes, go out by aerial radiation again, but because comprise network itself exists power loss, can reduce the synthetic efficiency of power; Second method is based on free-space power synthetic technology, by adopting spatial power synthetic antenna, multichannel power signal is directly radiated free space by antenna element, by controlling the phase place of the each path radiation of solid-state amplifier, directly synthesize the great-power electromagnetic wave beam of directed radiation at free space, owing to there is no the loss of comprise network, combined coefficient is higher.It is the effective way that produces large power, electrically electromagnetic wave radiation.
In Radar Simulation System, system has broad beam, power output and reaches the requirement of 40kW conventionally to radiation index, general solid-state power amplifier does not often possess above-mentioned performance index in the market, simultaneously its also to have equipment volume excessive, the problems such as heat power consumption is higher, and combined coefficient is lower; And radar simulator system need to be worked conventionally under hypobaric adverse circumstances of the temperature range of wide reaching-55～60 ℃ and 12Kpa, the phenomenon such as common solid-state power amplifier there will be sparking under this environment, puncture, thus the normal use of Radar Simulation System affected.
Utility model content
The technical problem to be solved in the present invention is to provide a kind of solid-state power amplifier, and it can, in reaching the requirement of Radar Simulation System performance index, can be realized miniaturization, low heat power consumption, and have the ability of steady operation under adverse circumstances.
For solving the problems of the technologies described above, the utility model provides a kind of S-band solid-state power amplifier, comprises solid-state power amplifier body, power amplifier module, Anneta module and power module; Described power amplifier module is made up of upper strata power amplifier module and lower floor's power amplifier module, and levels power amplifier module is equipped with multiple output ports that are connected to Anneta module; Described Anneta module is made up of multiple fundamental radiation bodies; Described S-band solid-state power amplifier is provided with radiating module, and described radiating module is arranged at the left and right sides of solid-state power amplifier.
As a kind of improvement of the present utility model, described upper strata power amplifier module and lower floor's power amplifier module connect to form successively by driving stage amplifier, phase modulation power splitter and multiple final power amplifier; Described final power amplifier and output port connect one to one.Driving stage amplifier is promoted step by step by 3 stage power amplifiers, provides enough power drive ability and enough gains with this.Described driving stage amplifier in is provided with temperature compensation module.
Adopt Pei Xiang tetra-road power splitters as a kind of improvement described upper strata power amplifier module of the present utility model and lower floor's power amplifier module, and it is coupled to be provided with 4 final power amplifiers; The equal correspondence of each final power amplifier is connected with an output port.
As another kind of improvement of the present utility model, described Anneta module is made up of eight fundamental radiation bodies, and described fundamental radiation body adopts micro-strip dipole antenna, and it adopts 4 × 2 equidistant distribution forms to arrange.
As another kind of improvement of the present utility model, the radiating module of the described solid-state power amplifier left and right sides is respectively oblongleaf kadsura stem or root thermal modules and air draught radiating module, and each radiating module is by an extraordinary blower fan and multiple radiating block composition.
As another kind of improvement of the present utility model, described solid-state power amplifier left side is provided with 2 oblongleaf kadsura stem or root thermal modules, and right side is provided with 1 air draught radiating module.
As another kind of improvement of the present utility model, described power module is by the accumulation power supply group, the DC feedback plate that are arranged on solid-state power amplifier inside, and coupled DC power supply composition.
Than prior art, the utlity model has following advantage:
1) adopt solid-state power amplifier, it all can obtain higher reliability at the condition of high temperature, low-temperature and low-pressure state, vibrational state and the state that works long hours and want; The problem such as meanwhile,, because solid state power amplifier Maximum Power Output is lower, its internal circuit can not occur sparking, puncture;
2) adopt solid-state power amplifier, in the time of the fault of solid state power amplifier You Yi road, radiation signal can not interrupt, and only can cause radiant power to decline to some extent, so make solid-state power amplifier fault be easy to process;
3) be set to upper strata power amplifier module and lower floor's power amplifier module by power amplifier module, simplified the structure of solid-state power amplifier, and equipment volume is reduced;
4) pass through at driving stage amplifier in set temperature compensating module, guarantee be not more than-2～2dB of its gain fluctuation, and guarantee that with this amplifier modules at different levels static working current under the operational temperature conditions of-55～60 ℃ is stabilized between 0.3A～0.4A, thereby solid-state power amplifier can be under the operational temperature conditions of-55～60 ℃ steady operation;
5) Anneta module that adopts 4 × 2 equidistant distribution forms to arrange, making the half-power beam coverage of antenna in space is 20 ° × 40 °, when the radiation of guaranteeing Radar Simulation System requires, has realized the simplification of antenna arrangement mode;
6) oblongleaf kadsura stem or root thermal modules and air draught radiating module are set in solid-state power amplifier both sides, and by its cooperating, can take away the heat that the work of solid-state power amplifier internal component produces, effectively reduce the heat power consumption in solid-state power amplifier work.
Accompanying drawing explanation
Fig. 1 is solid-state power amplifier vertical view in the utility model;
Fig. 2 is solid-state power amplifier right view in the utility model;
Fig. 3 is solid-state power amplifier left view in the utility model;
Fig. 4 is solid-state power amplifier front view in the utility model;
Fig. 5 is solid-state power amplifier internal circuit schematic diagram in the utility model;
Fig. 6 is solid-state amplifier internal circuit diagram in the utility model;
Fig. 7 is temperature compensation module circuit diagram in the utility model;
Description of reference numerals:
1-upper strata power amplifier module, 2-lower floor power amplifier module, 3-Anneta module, 4-driving stage amplifier, 5-phase modulation power splitter, 6-final amplifier, 7-temperature compensation module, 8-micro-strip dipole antenna, 9-oblongleaf kadsura stem or root thermal modules, 10-air draught radiating module, 11-energy capacitance set, 12-DC feedback plate, 13-DC power supply.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the utility model, should understand following embodiment and only be not used in restriction scope of the present utility model for the utility model is described.
With a kind of S-band solid-state power amplifier shown in Fig. 3, comprise solid-state power amplifier body, power amplifier module, Anneta module and power module as shown in Figure 1, Figure 2; Described power amplifier module is made up of upper strata power amplifier module 1 and lower floor's power amplifier module 2, and levels power amplifier module is equipped with multiple output ports, and is connected to Anneta module 3; Described Anneta module 3 is made up of multiple fundamental radiation bodies.
As a kind of improvement of the present utility model, described upper strata power amplifier module 1 connects to form by driving stage amplifier 4,5 and 4 final power amplifiers 6 of phase modulation power splitter successively with lower floor's power amplifier module 2, its theory diagram and circuit diagram are as shown in Fig. 5 and Fig. 6, phase modulation power splitter 5 adopts Pei Xiang tetra-road power splitters, and the equal correspondence of described each final power amplifier 6 is connected with an output port.Described driving stage amplifier 4 is promoted step by step by 3 stage power amplifiers, provides enough power drive ability and enough gains with this.Driving stage amplifier 4 inside are provided with temperature compensation module 7, and it is by multiple resistance and electric capacity composition, and circuit diagram as shown in Figure 7.The driving amplifier that is provided with temperature compensation module 7 is applied in solid-state power amplifier, and its operating voltage situation at all kinds of temperature is as shown in the table:
| Temperature conditions | Operating voltage | Operating current |
| Lower 10 ℃ of normal temperature | +32V | 0.35A |
| Under low temperature-55 ℃ | +32V | 0.4A |
| Lower 60 ℃ of high temperature | +32V | 0.32A |
By upper Biao Ke get, the driving amplifier that is provided with temperature compensation module 7 applies to solid-state power amplifier, and it substantially can keep steady operation in working temperature-55～60 ℃.
As another kind of improvement of the present utility model, described Anneta module 3 is made up of eight fundamental radiation bodies, its as shown in Figure 4, described fundamental radiation body adopts micro-strip dipole antenna 8.Micro-strip dipole antenna 8 on Anneta module 3 adopts 4 × 2 equidistant distribution forms to arrange, and each unit interval is 52.5mm, and it is that the half-power beam of 20 ° × 40 ° covers that antenna can form orientation wave beam × pitching wave beam in space.Simultaneously micro-strip dipole antenna has that volume is little, lightweight, low cost of manufacture, is easy to the feature of large-scale integrated.
As another kind of improvement of the present utility model, on S-band solid-state power amplifier, be provided with radiating module, it is arranged at the left and right sides of solid-state power amplifier.The radiating module of the left and right sides is respectively oblongleaf kadsura stem or root thermal modules 9 and air draught radiating module 10, and each radiating module is by an extraordinary blower fan and multiple radiating block composition.Described solid-state power amplifier left side is provided with 2 oblongleaf kadsura stem or root thermal modules 9, and right side is provided with 1 air draught radiating module 10.Described oblongleaf kadsura stem or root thermal modules and air draught radiating module are all communicated to state power amplifier inside.
As another kind of improvement of the present utility model, described power module is by the accumulation power supply group 11, the DC feedback plate 12 that are arranged on solid-state power amplifier inside, and coupled DC power supply 13 forms.
Adopt the S-band solid-state power amplifier of technique scheme, the power that outputs to prime power amplifier take signal source as+10dBm is example, it is after the power amplifier of overdriving, can reach+51dBm of power, it is through the transmission of about feeder cable, and be greater than+42dBm of its power after exporting by power splitter, promote again afterwards final stage amplifier module, the power output of final 8 ports of final stage assembly is all greater than 52.7dBm, by the synthetic final radiant power that is greater than 76dBm that obtains in multi-beam space, it can obtain higher combined coefficient.
Than prior art, the utlity model has following advantage:
1) adopt solid-state power amplifier, it all can obtain higher reliability at the condition of high temperature, low-temperature and low-pressure state, vibrational state and the state that works long hours and want; The problem such as meanwhile,, because solid state power amplifier Maximum Power Output is lower, its internal circuit can not occur sparking, puncture;
2) adopt solid-state power amplifier, in the time of the fault of solid state power amplifier You Yi road, radiation signal can not interrupt, and only can cause radiant power to decline to some extent, so make solid-state power amplifier fault be easy to process;
3) be set to upper strata power amplifier module and lower floor's power amplifier module by power amplifier module, simplified the structure of solid-state power amplifier, and equipment volume is reduced;
4) pass through at driving stage amplifier in set temperature compensating module, guarantee be not more than-2～2dB of its gain fluctuation, and guarantee that with this amplifier modules at different levels static working current under the operational temperature conditions of-55～60 ℃ is stabilized between 0.3A～0.4A, thereby solid-state power amplifier can be under the operational temperature conditions of-55～60 ℃ steady operation;
5) Anneta module that adopts 4 × 2 equidistant distribution forms to arrange, making the half-power beam coverage of antenna in space is 20 ° × 40 °, when the radiation of guaranteeing Radar Simulation System requires, has realized the simplification of antenna arrangement mode;
6) oblongleaf kadsura stem or root thermal modules and air draught radiating module are set in solid-state power amplifier both sides, and by its cooperating, can take away the heat that the work of solid-state power amplifier internal component produces, effectively reduce the heat power consumption in solid-state power amplifier work.
The disclosed technological means of the utility model scheme is not limited only to the disclosed technological means of above-mentioned execution mode, also comprises the technical scheme being made up of above technical characterictic combination in any.
Claims (8)
1. a S-band solid-state power amplifier, comprises solid-state power amplifier body, power amplifier module, Anneta module and power module; It is characterized in that, described power amplifier module is made up of upper strata power amplifier module and lower floor's power amplifier module, and levels power amplifier module is equipped with multiple output ports that are connected to Anneta module; Described Anneta module is made up of multiple fundamental radiation bodies; Described S-band solid-state power amplifier is provided with radiating module, and described radiating module is arranged at the left and right sides of solid-state power amplifier main body.
2. according to S-band solid-state power amplifier claimed in claim 1, it is characterized in that, described upper strata power amplifier module and lower floor's power amplifier module connect to form successively by driving stage amplifier, phase modulation power splitter and multiple final power amplifier; Described final power amplifier and output port connect one to one.
3. according to the S-band solid-state power amplifier described in claim 1 or 2, it is characterized in that, described driving stage amplifier in is provided with temperature compensation module.
4. according to the S-band solid-state power amplifier described in claim 1 or 2, it is characterized in that, described upper strata power amplifier module and lower floor's power amplifier module all adopt Pei Xiang tetra-road power splitters, and it is coupled to be provided with 4 final power amplifiers; The equal correspondence of each final power amplifier is connected with an output port.
5. according to S-band solid-state power amplifier claimed in claim 1, it is characterized in that, described Anneta module is made up of eight fundamental radiation bodies, and described fundamental radiation body adopts micro-strip dipole antenna, and it adopts 4 × 2 equidistant distribution forms to arrange.
6. according to S-band solid-state power amplifier claimed in claim 1, it is characterized in that, the radiating module of the described solid-state power amplifier main body left and right sides is respectively oblongleaf kadsura stem or root thermal modules and air draught radiating module, and each radiating module is by an extraordinary blower fan and multiple radiating block composition.
7. according to the S-band solid-state power amplifier described in claim 1 or 6, it is characterized in that, described solid-state power amplifier left side is provided with 2 oblongleaf kadsura stem or root thermal modules, and right side is provided with 1 air draught radiating module; Described oblongleaf kadsura stem or root thermal modules and air draught radiating module are all communicated to state power amplifier inside.
8. according to the S-band solid-state power amplifier described in claim 1,2,5,6 any one, it is characterized in that, described power module is by the accumulation power supply group, the DC feedback plate that are arranged on solid-state power amplifier inside, and coupled DC power supply composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320775690.9U CN203596801U (en) | 2013-12-02 | 2013-12-02 | S waveband solid power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320775690.9U CN203596801U (en) | 2013-12-02 | 2013-12-02 | S waveband solid power amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN203596801U true CN203596801U (en) | 2014-05-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320775690.9U Expired - Fee Related CN203596801U (en) | 2013-12-02 | 2013-12-02 | S waveband solid power amplifier |
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| Country | Link |
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| CN (1) | CN203596801U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107404012A (en) * | 2017-07-21 | 2017-11-28 | 南京长峰航天电子科技有限公司 | S frequency range variable beam width Active Arrays |
| WO2018218851A1 (en) * | 2017-05-27 | 2018-12-06 | 中国电子科技集团公司第四十一研究所 | Novel rcck-mount wideband solid state power amplifier |
-
2013
- 2013-12-02 CN CN201320775690.9U patent/CN203596801U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018218851A1 (en) * | 2017-05-27 | 2018-12-06 | 中国电子科技集团公司第四十一研究所 | Novel rcck-mount wideband solid state power amplifier |
| CN107404012A (en) * | 2017-07-21 | 2017-11-28 | 南京长峰航天电子科技有限公司 | S frequency range variable beam width Active Arrays |
| CN107404012B (en) * | 2017-07-21 | 2018-05-08 | 南京长峰航天电子科技有限公司 | S frequency range variable beam width Active Arrays |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Shen Jinliang Inventor after: Ge Ming Inventor after: Pei Qingfei Inventor before: Shen Jinliang Inventor before: Ge Ming Inventor before: Pei Qingfei |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140514 Termination date: 20181202 |