CN203522644U - Low phase noise planar oscillator - Google Patents
Low phase noise planar oscillator Download PDFInfo
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- CN203522644U CN203522644U CN201320589121.5U CN201320589121U CN203522644U CN 203522644 U CN203522644 U CN 203522644U CN 201320589121 U CN201320589121 U CN 201320589121U CN 203522644 U CN203522644 U CN 203522644U
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- phase noise
- oscillating tube
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Abstract
The utility model discloses a low phase noise planar oscillator. The low phase noise planar oscillator comprises a substrate integrated waveguide, a first oscillator tube and a second oscillator tube. Two ends of the substrate integrated waveguide are respectively connected with an input end of the first oscillator tube and an input end of the second oscillator tube. An output end of the first oscillator tube is connected with a first reference level. An output end of the second oscillator tube is connected with a second reference level. The substrate integrated waveguide comprises a plurality of rows of paratactic through hole groups. Each through hole group comprises a plurality of through holes arranged vertically. A gap exists between each two rows of the through hole groups. A lock phase is injected after the two ends of the substrate integrated waveguide are connected in parallel. The low phase noise planar oscillator has the advantages of high output frequency, low phase noise, good temperature stability and high loading capability, the oscillator is planar and miniaturized, the processing technology is simple, and the cost is reduced.
Description
Technical field
The utility model relates to a kind of microwave circuit, is specifically related to a kind of low phase noise planar oscillation device.
Background technology
Oscillator is the critical component of communication and radar system.Along with the fast development of emerging radio communication and millimetre-wave radar, the performance of oscillator has been proposed to more and more higher requirement, lower phase noise, higher output frequency and larger power output.Therefore high-performance, complanation oscillator are studied and had important practical significance.
In prior art, improve the method for oscillator phase, mainly contain dielectric oscillator method and gunn tube waveguide oscillator method, but these methods are usually stereochemical structures, and volume is larger, this,, by causing the complexity of design and the raising of cost, is unfavorable for the development of circuit integration.In addition, in order to adapt to the requirement of the low oscillator of making an uproar mutually of miniaturization, LTCC technology is used, but designed oscillator stability is not high enough, is in use very restricted.
Along with the continuous requirement of microwave communication system to frequency source performance and miniaturization, high-performance, complanation and integrated oscillation source are by wilderness demand.Carry out from the planar structure research that improves oscillator performance of starting with and just seem extremely important.
Utility model content
The purpose of this utility model is to provide a kind of low phase noise planar oscillation device, have the advantages that output frequency is high, phase noise is low, temperature stability is good and carrying load ability is strong, and making oscillator complanation and miniaturization, processing technology is simple, cost.
In order to achieve the above object, the utility model is achieved through the following technical solutions: a kind of low phase noise planar oscillation device, be characterized in, and comprise substrate integration wave-guide, the first oscillating tube and the second oscillating tube;
The two ends of above-mentioned substrate integration wave-guide connect respectively the input of the first oscillating tube and the input of the second oscillating tube;
The output of the first above-mentioned oscillating tube connects the first reference level;
The output of the second above-mentioned oscillating tube connects the second reference level.
Above-mentioned substrate integration wave-guide comprises many rows sets of vias arranged side by side;
Each above-mentioned sets of vias comprises a plurality of vertically disposed through holes;
Between two above-mentioned exhausting hole groups, be provided with space.
The two ends of above-mentioned substrate integration wave-guide also connect rear injection phase-locking.
A kind of low phase noise planar oscillation of the utility model device compared with prior art has the following advantages: owing to being provided with substrate integration wave-guide, make oscillator complanation and miniaturization; Due to oscillator injection phase-locking, thereby improve the phase noise of oscillator; Owing to being provided with the first oscillating tube and the second oscillating tube, make K wave band oscillator realize the advantages such as the raising of service efficiency, good carrying load ability and temperature stability; Owing to being provided with the first oscillating tube and the second oscillating tube,, make the incoming frequency of phase lock circuitry be reduced to original half, without frequency divider, the design difficulty of circuit lowers; First-harmonic is drawn, improved the utilization ratio of oscillator.This structural circuit is simple, be easy to processing, cost is also lower.
Accompanying drawing explanation
Fig. 1 is the overall structure schematic diagram of a kind of low phase noise planar oscillation of the utility model device.
Fig. 2 is the structural representation of a kind of low phase noise planar oscillation of the utility model device substrate integration wave-guide.
Embodiment
Below in conjunction with accompanying drawing, by describing a preferably specific embodiment in detail, the utility model is further elaborated.
As depicted in figs. 1 and 2, a kind of low phase noise planar oscillation device, comprises substrate integration wave-guide 1(Substrate Integrated Waveguide, SIW), the first oscillating tube 2 and the second oscillating tube 3; The two ends of substrate integration wave-guide 1 connect respectively the input of the first oscillating tube 2 and the input of the second oscillating tube 3; The output of the first oscillating tube 2 connects the first reference level 4; The output of the second oscillating tube 3 connects the second reference level 5.Substrate integration wave-guide 1 comprises many rows sets of vias 11 arranged side by side; Each sets of vias 11 comprises a plurality of vertically disposed through holes 111; Between two exhausting hole groups 11, be provided with space 112.The two ends of substrate integration wave-guide 1 also connect rear injection phase-locking.
Concrete application: as shown in Figure 2, the centre-to-centre spacing of two exhausting hole groups 11 of substrate integration wave-guide 1 is w, through hole 111(metallization) diameter is D, the centre-to-centre spacing of vertical two through hole 111 is p, the thickness of dielectric substrate is h, the length in space and width are respectively a and b, have respectively three, and relative dielectric constant is
.Due between substrate integration wave-guide 1 and traditional rectangular waveguide, there is similar transmission characteristic, when D/w hour, the equivalent width We of substrate integration wave-guide 1 can adopt (1) formula to calculate:
When D/w is larger, can adopt more accurate equivalent width expression formula (2) formula to calculate:
By being equivalent to rectangular-wave resonant cavity, in substrate integration wave-guide 1 resonator, the resonance frequency of TEm0q pattern can be by shown in formula (3) and formula (4)
（3）
The physical length that in formula, L is resonant cavity; λ 0 is free space wave number.By electromagnetic-field simulation, obtain result, when passband central frequency is 12.3GHz left and right, medium substrate all adopts Rogers RT/Duroid 5880 media, dielectric constant 2.2, and thickness is 0.254mm.According to analysis above, the selection of parameter D and p need to take into account the requirement of leakage loss and processing technology, therefore obtains D=0.4mm here, p=0.8mm, a1=9mm, a2=11.3mm, b1=b2=0.2mm, the wider cut-off frequency of width w
just lower, by simulation calculation, select w=4.8mm.By calculating substrate integration wave-guide 1 through hole 111 spacing
pwith through hole 111 diameters
detc. internal structure, realize the height with waveguide function
qresonator, realizes oscillator complanation and miniaturization;
In order to realize Fundamental Wave Injection Locked harmonic wave, directly from harmonic wave port, it is carried out to injection locking, generally lock bandwidth narrower.And the External Q of first-harmonic port is low more than harmonic wave port, and can also select multi-form first-harmonic coupling circuit to regulate it, therefore can access wider locking bandwidth.The phase place locking process of injection locked oscillator can be represented by formula (5)
In formula,
for the instantaneous phase of injection locked oscillator, Binj is injection locking half-band width and is obtained by formula (6)
Wherein,
,
be respectively the free-running amplitude of Injection Signal and oscillator.
a quality factor is carried in having of resonant element.
The input of the input of the first oscillating tube 2 and the second oscillating tube 3 is inputted respectively identical fundametal compoment, the first oscillating tube 2 and the second oscillating tube 3 all adopt ATF 26884 models of Agilent company, collector electrode is powered and is made its starting of oscillation, at the output of the first oscillating tube 2 and the output fundamental frequency suppression of the second oscillating tube 3, second harmonic is synthetic.
The first oscillating tube 2 and the second oscillating tube 3 all adopt the work of two active device balances, and the first oscillating tube 2 and the second oscillating tube 3 all belong to secondary harmonic generation (SHG) device, therefore output frequency can improve exponentially; Between the first oscillating tube 2 and the first-harmonic of the second oscillating tube 3, have the phase difference of 180 °, make the plane of symmetry of oscillator become radio frequency " virtual earth ", the load being connected in theory on this plane of symmetry does not affect first-harmonic, has improved circuit carrying load ability; More low temperature stability is higher for the operating frequency of active device resonator, and in the first oscillating tube 2 and the second oscillating tube 3, the operating frequency of active device resonator is output frequency half, therefore can improve the temperature stability of oscillator.
The general range of choice of relative dielectric constant of medium substrate is:
between=2 ~ 3, meanwhile, loss angle tangent should be as far as possible little, generally gets
≤ 10-3; Because oscillator operates mainly in 12GHz left and right, larger
value also can.The selection principal security oscillator performance of dielectric-slab thickness h, consideration is simultaneously convenient to other circuit integrated, and getting h is 0.2mm left and right.
Substrate integration wave-guide 1 port Impedance can need to be 50 according to design
or other resistance value.
Although content of the present utility model has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to restriction of the present utility model.Those skilled in the art, read after foregoing, for multiple modification of the present utility model with to substitute will be all apparent.Therefore, protection range of the present utility model should be limited to the appended claims.
Claims (3)
1. a low phase noise planar oscillation device, is characterized in that, comprises: substrate integration wave-guide (1), the first oscillating tube (2) and the second oscillating tube (3);
The two ends of described substrate integration wave-guide (1) connect respectively the input of the first oscillating tube (2) and the input of the second oscillating tube (3);
The output of described the first oscillating tube (2) connects the first reference level (4);
The output of described the second oscillating tube (3) connects the second reference level (5).
2. low phase noise planar oscillation device as claimed in claim 1, is characterized in that, described substrate integration wave-guide (1) comprises many rows sets of vias (11) arranged side by side;
Described each sets of vias (11) comprises a plurality of vertically disposed through holes (111);
Between two described exhausting hole groups (11), be provided with space.
3. low phase noise planar oscillation device as claimed in claim 1, is characterized in that, the two ends of described substrate integration wave-guide (1) also connect rear injection phase-locking.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320589121.5U CN203522644U (en) | 2013-09-24 | 2013-09-24 | Low phase noise planar oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320589121.5U CN203522644U (en) | 2013-09-24 | 2013-09-24 | Low phase noise planar oscillator |
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| Publication Number | Publication Date |
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| CN203522644U true CN203522644U (en) | 2014-04-02 |
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| CN201320589121.5U Expired - Fee Related CN203522644U (en) | 2013-09-24 | 2013-09-24 | Low phase noise planar oscillator |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289813A (en) * | 2019-07-15 | 2019-09-27 | 电子科技大学 | A kind of low phase noise oscillator with harmonics restraint |
| US11641178B2 (en) | 2020-12-23 | 2023-05-02 | Carrier Corporation | Oscillator circuit |
-
2013
- 2013-09-24 CN CN201320589121.5U patent/CN203522644U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289813A (en) * | 2019-07-15 | 2019-09-27 | 电子科技大学 | A kind of low phase noise oscillator with harmonics restraint |
| CN110289813B (en) * | 2019-07-15 | 2021-06-08 | 电子科技大学 | Low phase noise oscillator with harmonic suppression |
| US11641178B2 (en) | 2020-12-23 | 2023-05-02 | Carrier Corporation | Oscillator circuit |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140402 Termination date: 20210924 |