CN203466195U - OLED display panel and display device - Google Patents
OLED display panel and display device Download PDFInfo
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- CN203466195U CN203466195U CN201320607424.5U CN201320607424U CN203466195U CN 203466195 U CN203466195 U CN 203466195U CN 201320607424 U CN201320607424 U CN 201320607424U CN 203466195 U CN203466195 U CN 203466195U
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Abstract
The utility model provides an OLED display panel and a display device, and belongs to the field of an organic light-emitting device. The OLED display panel comprises an OLED light-emitting structure, a TFT back board and an insulation layer which is arranged between the OLED light-emitting structure and the TFT back board, wherein the refraction rate of the insulation layer gradually gets lower in the light emitting direction of the OLED light-emitting structure. Through the technical scheme in the utility model, the influence of the emitting light of the OLED light-emitting structure on the TFT performance can be reduced.
Description
Technical field
The utility model includes organic electroluminescence devices field, refers to especially a kind of OLED display floater, display unit.
Background technology
Organic electroluminescence device (OLED) has the plurality of advantages such as response quick, beautiful in colour, frivolous convenience, working range are wide, has become the new star rising that shows industry.Due to current conventional low temperature polycrystalline silicon (LTPS) backboard of OLED display floater, there is the restrictions such as complex process, with high costs, large area difficulty, metal oxide (Oxide) TFT(thin-film transistor) backboard become OLED research and produce pay close attention to direction.
The superior performance of metal oxide TFT, technique are simple and be easy to large area, but, the photostability of metal oxide TFT is perplexing dealer always for a long time, not yet has way can properly solve the photostability of metal oxide TFT in OLED display floater at present.Especially in end transmitting OLED display floater as shown in Figure 1, the light (as shown by arrows) that organic luminous layer 14 electroluminescence produce will be inevitably direct irradiation or reflex in TFT structure, incident visible ray can have a negative impact to performances such as output/transfer ability of TFT, reliabilities, the visible light wavelength of incident is shorter, the characteristic drift of TFT is more remarkable, Simultaneous Switching ratio diminishes, and leakage current increases, and directly impact shows the display performance of product.
Utility model content
The technical problems to be solved in the utility model is to provide a kind of OLED display floater, display unit, the impact of the emergent ray that can reduce OLED ray structure on TFT performance.
For solving the problems of the technologies described above, embodiment of the present utility model provides technical scheme as follows:
On the one hand, a kind of OLED display floater is provided, described OLED display floater comprises OLED ray structure, TFT backboard and the insulating barrier between described OLED ray structure and described TFT backboard, in the beam projecting direction of described OLED ray structure, the refractive index of described insulating barrier is step-down gradually.
Further, described OLED ray structure is end ray structure, and described insulating barrier is that the pixel of described OLED display floater defines layer, and from the negative electrode of described OLED ray structure, the direction of anode, described pixel defines the refractive index step-down gradually of layer.
Further, described pixel defines layer resin material and more than one resin material with a plurality of photosensitive groups that by more than one, have single photosensitive group and forms, the refractive index of the resin material of described a plurality of photosensitive groups is greater than the refractive index of the resin material of described single photosensitive group, wherein, from the negative electrode of described OLED ray structure the direction of anode, described in there are a plurality of photosensitive groups resin material in described pixel, define concentration in layer step-down gradually.
Further, the refractive index that described pixel defines layer is between 1.4-2.0.
Further, described OLED display floater specifically comprises:
First substrate;
Be formed on the TFT that comprises active electrode, drain electrode and gate electrode on described first substrate;
Be formed on the passivation layer that includes passivation layer via hole on described TFT;
Be formed on the colored light-filtering units on described passivation layer;
Be formed on the protective layer that includes protective layer via hole in described colored light-filtering units, described protective layer via hole is corresponding with described passivation layer via hole;
Be formed on the anode of the described OLED ray structure on described protective layer, described anode is connected with the drain electrode of described TFT with described protective layer via hole by described passivation layer via hole;
Be formed on the figure that described pixel on described anode defines layer, and the organic luminous layer that defines the described OLED ray structure between layer at neighbor;
Be formed on the negative electrode that described pixel defines the described OLED ray structure on layer and described organic luminous layer.
The utility model embodiment also provides a kind of display unit, comprises OLED display floater as above.
Embodiment of the present utility model has following beneficial effect:
In such scheme, in the beam projecting direction of OLED ray structure, the refractive index of insulating barrier step-down gradually between OLED ray structure and TFT backboard, the emergent ray of OLED ray structure enters into after insulating barrier like this, it is large that refraction angle becomes gradually, make most of emergent ray can walk around TFT, reduce and be irradiated to the light on TFT, thus the impact of the emergent ray of reduction OLED ray structure on TFT performance.
Accompanying drawing explanation
Fig. 1 is the structural representation of end transmitting OLED display floater;
Fig. 2 is the affect schematic diagram of incident visible ray on TFT leakage current;
Fig. 3 and Fig. 4 are the affect schematic diagram of incident visible ray on TFT grid voltage;
Fig. 5 is the structural representation that has the resin material of single photosensitive group and have the resin material of a plurality of photosensitive groups;
Fig. 6 is the schematic cross-section of the utility model embodiment substrate;
Fig. 7 is that the utility model embodiment forms the schematic cross-section after resilient coating on substrate;
Fig. 8 is that the utility model embodiment forms the schematic cross-section after gate electrode on resilient coating;
To be the utility model embodiment form the schematic cross-section after gate insulation layer and active layer being formed with to Fig. 9 on the resilient coating of gate electrode;
Figure 10 is that the utility model embodiment forms the schematic cross-section after etching barrier layer on active layer;
Figure 11 is that the utility model embodiment forms the schematic cross-section after source electrode and drain electrode;
Figure 12 is that the utility model embodiment forms the schematic cross-section after passivation layer;
Figure 13 is that the utility model embodiment forms the schematic cross-section after colored light-filtering units and protective layer;
Figure 14 is that the utility model embodiment forms the schematic cross-section after transparency conducting layer;
Figure 15 is that the utility model embodiment forms pixel and defines the schematic cross-section after layer;
Figure 16 is the propagation schematic diagram that the utility model embodiment pixel defines light in layer;
Figure 17 is the structural representation of the utility model embodiment OLED display floater.
Reference numeral
1 substrate 2 resilient coating 3 gate electrodes
4 gate insulation layer 5 active layer 6 etching barrier layers
7 source electrode 8 drain electrode 9 passivation layers
10 colored light-filtering units 11 protective layer 12 transparency conducting layers
13 pixels define layer 14 organic luminous layer 15 negative electrode
Embodiment
For technical problem, technical scheme and advantage that embodiment of the present utility model will be solved are clearer, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
In the OLED display floater of embodiment of the present utility model for existing employing metal oxide TFT backboard, the emergent ray of OLED ray structure can affect the problem of the performance of TFT, provide a kind of OLED display floater, display unit, the impact of the emergent ray that can reduce OLED ray structure on TFT performance.
The utility model embodiment provides a kind of OLED display floater, described OLED display floater comprises OLED ray structure, TFT backboard and the insulating barrier between described OLED ray structure and described TFT backboard, wherein, in the beam projecting direction of described OLED ray structure, the refractive index of described insulating barrier is step-down gradually.
OLED display floater of the present utility model, in the beam projecting direction of OLED ray structure, the refractive index of insulating barrier step-down gradually between OLED ray structure and TFT backboard, the emergent ray of OLED ray structure enters into after insulating barrier like this, it is large that refraction angle becomes gradually, make most of emergent ray can walk around TFT, reduce and be irradiated to the light on TFT, thus the impact of the emergent ray of reduction OLED ray structure on TFT performance.
Particularly, described OLED ray structure can be end ray structure, described insulating barrier is that the pixel of described OLED display floater defines layer, described pixel defines layer between the negative electrode and anode of described OLED ray structure, at the negative electrode from described OLED ray structure the direction of anode, described pixel defines the refractive index step-down gradually of layer, the emergent ray of OLED ray structure enters into pixel and defines after layer like this, it is large that refraction angle becomes gradually, make most of emergent ray can walk around TFT, reduce and be irradiated to the light on TFT, thereby the impact of the emergent ray of reduction OLED ray structure on TFT performance.
In order to realize pixel, define the gradual change of layer refractive index, described pixel defines layer resin material and more than one resin material with a plurality of photosensitive groups that can have single photosensitive group by more than one and forms, the refractive index of the resin material of described a plurality of photosensitive groups is greater than the refractive index of the resin material of described single photosensitive group, wherein, from the negative electrode of described OLED ray structure the direction of anode, the described resin material with a plurality of photosensitive groups defines concentration in layer step-down gradually in described pixel, can there is higher refractive index so that pixel defines the top of layer, described pixel defines the refractive index of layer between 1.4-2.0, preferably between 1.5-1.8.
Particularly, described OLED display floater comprises:
First substrate;
Be formed on the TFT that comprises active electrode, drain electrode and gate electrode on described first substrate;
Be formed on the passivation layer that includes passivation layer via hole on described TFT;
Be formed on the colored light-filtering units on described passivation layer;
Be formed on the protective layer that includes protective layer via hole in described colored light-filtering units, described protective layer via hole is corresponding with described passivation layer via hole;
Be formed on the anode of the described OLED ray structure on described protective layer, described anode is connected with the drain electrode of described TFT with described protective layer via hole by described passivation layer via hole;
Be formed on the figure that described pixel on described anode defines layer, and the organic luminous layer that defines the described OLED ray structure between layer at neighbor;
Be formed on the negative electrode that described pixel defines the described OLED ray structure on layer and described organic luminous layer.
Further, OLED display floater can also comprise the second substrate being formed on described negative electrode.
The utility model embodiment also provides a kind of display unit, comprises OLED display floater as above.Wherein, the same above-described embodiment of the structure of OLED display floater and operation principle, does not repeat them here.In addition, the structure of other parts of display unit can, with reference to prior art, be not described in detail this herein.This display unit can be: TV, display, DPF, mobile phone, panel computer etc. have product or the parts of any Presentation Function.
The utility model embodiment also provides a kind of manufacture method of above-mentioned OLED display floater, described OLED display floater comprises OLED ray structure and TFT backboard, wherein, described manufacture method comprises: form the insulating barrier between described OLED ray structure and described TFT backboard, wherein, in the beam projecting direction of described OLED ray structure, the refractive index of described insulating barrier is step-down gradually.
The OLED display floater that the utility model is made, in the beam projecting direction of OLED ray structure, the refractive index of insulating barrier step-down gradually between OLED ray structure and TFT backboard, the emergent ray of OLED ray structure enters into after insulating barrier like this, it is large that refraction angle becomes gradually, make most of emergent ray can walk around TFT, reduce and be irradiated to the light on TFT, thus the impact of the emergent ray of reduction OLED ray structure on TFT performance.
Particularly, described OLED ray structure can be end ray structure, and the insulating barrier of described formation between described OLED ray structure and described TFT backboard comprises:
The pixel that forms described OLED display floater defines layer, and wherein, from the negative electrode of described OLED ray structure, the direction of anode, described pixel defines the refractive index step-down gradually of layer.The emergent ray of OLED ray structure enters into pixel and defines after layer like this, and refraction angle becomes greatly gradually, makes most of emergent ray can walk around TFT, and reduce and be irradiated to the light on TFT, thus the impact of the emergent ray that reduces OLED ray structure on TFT performance.
Preferably, the pixel of the described OLED display floater of described formation define layer comprise:
Mixed solution is formed on the substrate that is formed with described anode, form mixed solution film, described mixed solution include more than one resin materials with single photosensitive group, more than one have a plurality of photosensitive groups resin material, can absorb the light absorbent that ultraviolet light and wavelength are less than the visible ray of preset value, the refractive index of the resin material of described a plurality of photosensitive groups is greater than the refractive index of the resin material of described single photosensitive group;
Described mixed solution film is exposed, by composition technique, form the figure that the pixel being comprised of described mixed solution film defines layer;
The figure that described pixel is defined to layer is cured, form described pixel and define layer, wherein, from the negative electrode of described OLED ray structure the direction of anode, described in there are a plurality of photosensitive groups resin material in described pixel, define concentration in layer step-down gradually.
In above-mentioned steps, can in photosensitive type organic resin, mix dyestuff or the pigment formation mixed solution that can absorb ultraviolet light or visible ray shorter wavelength part, dyestuff and pigment need to partly have strong absorbent properties to ultraviolet light or visible ray shorter wavelength, and have more uniform dispersion effect in photosensitive type organic resin; As shown in Figure 5, this photosensitive type organic resin by more than one have the resin material (low-refraction) of single photosensitive group and resin material (high index of refraction) that more than one have a plurality of photosensitive groups in certain proportion (such as 1:1) realize good being mixed to form, and do not have phenomenon of phase separation to occur.
The mixed solution film that mixed solution is formed exposes, in exposure process, light assimilation effect due to dyestuff and pigment, the light intensity of mixed solution film bottom will be weaker than the light intensity on mixed solution film top, the regionality that has produced light intensity in the direction straight of mixed solution film distributes, and the light intensity of mixed solution film reduces from top to bottom gradually.The resin material of a plurality of photosensitive groups consumes sooner because reaction speed is faster on mixed solution film top in exposure process, the resin material that causes a plurality of photosensitive groups of mixed solution film bottom carries out concentration migration toward mixed solution film top, therefore in the mixed solution film after exposure, the regionality that the resin material that the resin material that has formed a plurality of photosensitive groups is mainly positioned at mixed solution film top, single photosensitive group is mainly positioned at mixed solution film bottom distributes.Afterwards to the pixel being formed by mixed solution film define layer figure be cured, form pixel and define layer, due to the resin material refractive index of a plurality of photosensitive groups resin material higher than single photosensitive group, caused pixel to define layer refractive index region from top to down and distributed.
Particularly, described manufacture method comprises:
One first substrate is provided;
On described first substrate, form the TFT that comprises active electrode, drain electrode and gate electrode;
On described TFT, form the passivation layer that includes passivation layer via hole;
On described passivation layer, form colored light-filtering units;
In described colored light-filtering units, form the protective layer that includes protective layer via hole, described protective layer via hole is corresponding with described passivation layer via hole;
On described protective layer, form the anode of described OLED ray structure, described anode is connected with the drain electrode of described TFT with described protective layer via hole by described passivation layer via hole;
On described anode, form the figure that described pixel defines layer, and the organic luminous layer that defines the described OLED ray structure between layer at neighbor;
In described pixel, define the negative electrode that forms described OLED ray structure on layer and described organic luminous layer.
Below in conjunction with accompanying drawing and specific embodiment, OLED display floater of the present utility model is described in detail:
The performances such as the factors such as different channel width-over-length ratio, the visible light wavelength of incident, positive back bias voltage size all can TFT is exported/transfer ability, reliability have a negative impact, and directly affect product property performance.Take incident visible ray as example, and the visible light wavelength of incident is shorter, and the characteristic drift of TFT is more remarkable, and Simultaneous Switching ratio diminishes, and leakage current increases.Therefore for the OLED display floater that adopts metal oxide TFT backboard, the emergent ray of OLED will exert an influence to the performance of TFT.The TFT that the channel width-over-length ratio of take is 50 μ m/10 μ m is example, and as shown in Figure 2, wherein transverse axis is gate electrode voltage, and the longitudinal axis is leakage current, can find out, the visible ray of incident will increase the leakage current of TFT.The TFT that the channel width-over-length ratio of take is 2811 μ m/25.6 μ m is example, as shown in Figure 3, wherein transverse axis is gate electrode voltage, the longitudinal axis is leakage current, can find out, the visible ray of incident will make the gate electrode voltage negative sense drift of TFT, and the visible light wavelength of incident is shorter is illustrated in figure 4 more greatly the impact of same incident light on TFT gate electrode voltage to the impact of TFT performance, wherein transverse axis is gate electrode voltage, the longitudinal axis is leakage current, from right to left, the irradiation time of incident light increases successively, can find out, the visible ray of incident will make the gate electrode voltage negative sense drift of TFT, and the time of the radiation of visible light of incident is longer, impact on TFT performance is larger.
For the impact on TFT performance of the visible ray that reduces incident, the utility model provides a kind of OLED display floater, and as shown in Fig. 6-17, the manufacture method of this OLED display floater specifically comprises the following steps:
Step a: as shown in Figure 6, provide a substrate 1, substrate 1 can be glass substrate or quartz base plate;
Step b: as shown in Figure 7, form resilient coating 2 on substrate 1;
Particularly, can strengthen chemical vapour deposition (CVD) (PECVD) method by using plasma, deposit resilient coating 2 on substrate 1, wherein, cushioning layer material can be selected oxide, nitride or nitrogen oxide, and resilient coating can be individual layer, bilayer or sandwich construction.Particularly, resilient coating can be SiNx, SiOx or Si (ON) x.
Step c: as shown in Figure 8, form the figure of gate electrode 3 and grid line on resilient coating 2;
Particularly, can adopt the method for sputter or thermal evaporation on resilient coating 2, to deposit a layer thickness to be
grid metal level, grid metal level can be Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, the alloy of the metals such as W and these metals, grid metal level can be single layer structure or sandwich construction, sandwich construction is such as Cu Mo, Ti Cu Ti, Mo Al Mo etc.On grid metal level, apply one deck photoresist, adopt mask plate to expose to photoresist, make photoresist form photoresist not reserve area and photoresist reserve area, wherein, photoresist reserve area is corresponding to the figure region of grid line and gate electrode, photoresist not reserve area corresponding to the region beyond above-mentioned figure; Carry out development treatment, the photoresist not photoresist of reserve area is completely removed, and the photoresist thickness of photoresist reserve area remains unchanged; By etching technics, etch away the not grid metallic film of reserve area of photoresist completely, peel off remaining photoresist, form the figure of grid line and gate electrode 3.
Steps d: as shown in Figure 9, form successively the figure of gate insulation layer 4 and active layer 5 on the substrate through step c;
Particularly, can strengthen chemical gaseous phase depositing process by using plasma, on the substrate 1 through step c, deposit thickness is about
gate insulation layer 4, wherein, gate insulation layer material can be selected oxide, nitride or nitrogen oxide, gate insulation layer can be individual layer, bilayer or sandwich construction.Particularly, gate insulation layer can be SiNx, SiOx or Si (ON) x.
On gate insulation layer 4, adopt afterwards magnetron sputtering, thermal evaporation or other film build method deposition a layer thickness to be about
semiconductor layer, on semiconductor layer, apply photoresist, expose, develop, etching semiconductor layer, and stripping photoresist, form the figure of the active layer 5 be comprised of semiconductor layer.
Step e: as shown in figure 10, form etching barrier layer 6 on active layer 5;
Particularly, can, strengthening chemical gaseous phase depositing process deposition-etch barrier layer 6 through using plasma on the substrate of steps d, on etching barrier layer, apply photoresist, expose, develop, etching etching barrier layer, and stripping photoresist, the figure of formation etching barrier layer 6.Wherein, etching barrier layer material can be selected oxide, nitride or nitrogen oxide, and etching barrier layer can be individual layer, bilayer or sandwich construction.Particularly, etching barrier layer can be SiNx, SiOx or Si (ON) x.
Step f: as shown in figure 11, form the figure of source electrode 7, drain electrode 8 and data wire on the substrate through step e;
On the substrate 1 through step e, adopt magnetron sputtering, thermal evaporation or other film build method deposition a layer thickness to be about
source leak metal level, it can be Cu that metal level is leaked in source, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, the alloy of the metals such as W and these metals.It can be single layer structure or sandwich construction that metal level is leaked in source, sandwich construction such as Cu Mo, Ti Cu Ti, Mo Al Mo etc.In source, leak on metal level and apply one deck photoresist, adopt mask plate to expose to photoresist, make photoresist form photoresist not reserve area and photoresist reserve area, wherein, photoresist reserve area is corresponding to the figure region of source electrode, drain electrode and data wire, photoresist not reserve area corresponding to the region beyond above-mentioned figure; Carry out development treatment, the photoresist not photoresist of reserve area is completely removed, and the photoresist thickness of photoresist reserve area remains unchanged; By etching technics, etch away photoresist completely and do not leak metallic film in the source of reserve area, peel off remaining photoresist, form the figure of data wire, source electrode 7 and drain electrode 8.
Step g: as shown in figure 12, form passivation layer 9 on the substrate through step f;
Particularly, on the substrate 1 through step f, adopt magnetron sputtering, thermal evaporation, PECVD or other film build method deposit thickness to be
passivation layer 9, wherein, passivation material can be selected oxide, nitride or nitrogen oxide, particularly, passivation layer can be SiNx, SiOx or Si (ON) x.Passivation layer can be single layer structure, can be also the double-layer structure that adopts silicon nitride and silica to form.
Step h: as shown in figure 13, form colored light-filtering units 10 and protective layer 11 on passivation layer 9;
Particularly; on passivation layer 9, form the colored light-filtering units 10 that comprises red optical filtering subelement, green optical filtering subelement and blue optical filtering subelement; and in colored light-filtering units 10, adopt magnetron sputtering, thermal evaporation, PECVD or other film build method to deposit protective layer 11; wherein; protective layer material can be selected oxide, nitride or nitrogen oxide; particularly, protective layer can be SiNx, SiOx or Si (ON) x.Protective layer can be single layer structure, can be also double-layer structure.
Step I: as shown in figure 14, form the anode 12 of the OLED ray structure being formed by transparency conducting layer on protective layer 11;
Particularly; first by composition technique, on passivation layer 9, form passivation layer via hole; on protective layer 11, form protective layer via hole, protective layer via hole is corresponding one by one with passivation layer via hole, adopts afterwards magnetron sputtering, thermal evaporation or other film build method deposit thickness to be on protective layer 11
transparency conducting layer, transparency conducting layer can be ITO or IZO.On transparency conducting layer, apply one deck photoresist; Adopt mask plate to expose to photoresist, make photoresist form photoresist not reserve area and photoresist reserve area, wherein, photoresist reserve area is corresponding to the figure region of the anode 12 of OLED ray structure, photoresist not reserve area corresponding to the region beyond above-mentioned figure; Carry out development treatment, the photoresist not photoresist of reserve area is completely removed, and the photoresist thickness of photoresist reserve area remains unchanged; By etching technics, etch away the not transparency conducting layer of reserve area of photoresist completely, peel off remaining photoresist, form anode 12, anode 12 is by passivation layer via hole and protective layer via hole and drain electrode 8 electric connections.
Step j: as shown in figure 15, defining layer 13 through forming pixel on the substrate of step I;
Particularly, can in photosensitive type organic resin, mix dyestuff or the pigment formation mixed solution that can absorb ultraviolet light or visible ray shorter wavelength part, dyestuff and pigment need to partly have strong absorbent properties to ultraviolet light or visible ray shorter wavelength, and have more uniform dispersion effect in photosensitive type organic resin; As shown in Figure 5, this photosensitive type organic resin by more than one have the resin material (low-refraction) of single photosensitive group and resin material (high index of refraction) that more than one have a plurality of photosensitive groups in certain proportion (such as 1:1) realize good being mixed to form, and do not have phenomenon of phase separation to occur.
Through adopting spin coated, blade coating, transfer printing or other film build method deposition mixed solution on the substrate of step I, form mixed solution film, the thickness of film, at 1-5 micron, is preferably 1.5-2.5 micron.Afterwards mixed solution film is exposed, in exposure process, light assimilation effect due to dyestuff and pigment, the light intensity of mixed solution film bottom will be weaker than the light intensity on mixed solution film top, the regionality that has produced light intensity in the direction straight of mixed solution film distributes, and the light intensity of mixed solution film reduces from top to bottom gradually.The resin material of a plurality of photosensitive groups consumes sooner because reaction speed is faster on mixed solution film top in exposure process, the resin material that causes a plurality of photosensitive groups of mixed solution film bottom carries out concentration migration toward mixed solution film top, therefore in the mixed solution film after exposure, the regionality that the resin material that the resin material that has formed a plurality of photosensitive groups is mainly positioned at mixed solution film top, single photosensitive group is mainly positioned at mixed solution film bottom distributes.
By composition technique, form the figure that the pixel being comprised of mixed solution film defines layer afterwards, the figure that pixel is defined to layer is cured, form pixel and define layer, due to the resin material refractive index of a plurality of photosensitive groups resin material higher than single photosensitive group, having caused pixel to define layer refractive index region from top to down distributes, pixel defines the refractive index of layer between 1.4-2.0, between 1.5-1.8.
As shown in figure 16, when light defines layer through pixel, while entering the medium of low-refraction due to light from the medium of high index of refraction, it is large that refraction angle can become, and pixel defines layer refractive index step-down gradually from top to down, therefore, pixel defines the direction of propagation of light in layer as shown in the arrow in Figure 16.
In addition, in some display floaters, pixel defines layer and is called as accumulation horizon, and the process that forms this accumulation horizon is similar with the process that formation pixel defines layer, does not repeat them here.
Step k: as shown in figure 17, at neighbor, define between layer 13 and form organic luminous layer 14, in pixel, define the negative electrode 15 that forms OLED ray structure on layer 13 and organic luminous layer 14, on negative electrode 15, attach substrate 1, can obtain OLED display floater as shown in figure 17.
Particularly, in adjacent pixel, define the organic luminous layer 14 that between layer 13, formation is comprised of hole injection layer, hole transmission layer, organic luminous layer, electron transfer layer and electron injecting layer, and define and on layer 13 and organic luminous layer 14, form the negative electrode 15 of OLED ray structure in pixel, negative electrode 15 can be by Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, the alloy of the metals such as W and these metals is made, and attaches another substrate 1 on negative electrode 15, can obtain OLED display floater as shown in figure 17.As shown in figure 17, by pixel, define most of light of layer and can walk around TFT, reduce and be irradiated to the light on TFT, thus the impact of the emergent ray of reduction OLED ray structure on TFT performance.
In the present embodiment, by add dyestuff or the pigment that can absorb ultraviolet light or visible ray shorter wavelength part in organic resin, cause the refractive index region property scope distribution that pixel defines layer interior each resin material, when light that OLED ray structure sends defines layer and enters from pixel, through light very repeatedly close/light dredges the refracting process at interface, impel light to depart from former travel track, thereby realize effective control of the light transmission approach that OLED ray structure is sent, reduce the impact of light on TFT performance, have that technique is simple, reliability advantages of higher.
The above is preferred implementation of the present utility model; should be understood that; for those skilled in the art; do not departing under the prerequisite of principle described in the utility model; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (6)
1. an OLED display floater, described OLED display floater comprises OLED ray structure, TFT backboard and the insulating barrier between described OLED ray structure and described TFT backboard, it is characterized in that, in the beam projecting direction of described OLED ray structure, the refractive index of described insulating barrier is step-down gradually.
2. OLED display floater according to claim 1, it is characterized in that, described OLED ray structure is end ray structure, described insulating barrier is that the pixel of described OLED display floater defines layer, from the negative electrode of described OLED ray structure, the direction of anode, described pixel defines the refractive index step-down gradually of layer.
3. OLED display floater according to claim 2, it is characterized in that, described pixel defines layer resin material and more than one resin material with a plurality of photosensitive groups that by more than one, have single photosensitive group and forms, the refractive index of the resin material of described a plurality of photosensitive groups is greater than the refractive index of the resin material of described single photosensitive group, wherein, from the negative electrode of described OLED ray structure the direction of anode, described in there are a plurality of photosensitive groups resin material in described pixel, define concentration in layer step-down gradually.
4. OLED display floater according to claim 3, is characterized in that, described pixel defines the refractive index of layer between 1.4-2.0.
5. according to the OLED display floater described in any one in claim 2-4, it is characterized in that, described OLED display floater specifically comprises:
First substrate;
Be formed on the TFT that comprises active electrode, drain electrode and gate electrode on described first substrate;
Be formed on the passivation layer that includes passivation layer via hole on described TFT;
Be formed on the colored light-filtering units on described passivation layer;
Be formed on the protective layer that includes protective layer via hole in described colored light-filtering units, described protective layer via hole is corresponding with described passivation layer via hole;
Be formed on the anode of the described OLED ray structure on described protective layer, described anode is connected with the drain electrode of described TFT with described protective layer via hole by described passivation layer via hole;
Be formed on the figure that described pixel on described anode defines layer, and the organic luminous layer that defines the described OLED ray structure between layer at neighbor;
Be formed on the negative electrode that described pixel defines the described OLED ray structure on layer and described organic luminous layer.
6. a display unit, is characterized in that, comprises the OLED display floater as described in any one in claim 1-5.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103500754A (en) * | 2013-09-29 | 2014-01-08 | 京东方科技集团股份有限公司 | OLED (Organic Light Emitting Diode) display panel and production method thereof as well as display device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103500754A (en) * | 2013-09-29 | 2014-01-08 | 京东方科技集团股份有限公司 | OLED (Organic Light Emitting Diode) display panel and production method thereof as well as display device |
| WO2015043238A1 (en) * | 2013-09-29 | 2015-04-02 | 京东方科技集团股份有限公司 | Oled display panel, manufacturing method therefor, and display apparatus |
| CN103500754B (en) * | 2013-09-29 | 2016-11-02 | 京东方科技集团股份有限公司 | OLED display panel and preparation method thereof, display device |
| US9620572B2 (en) | 2013-09-29 | 2017-04-11 | Boe Technology Group Co., Ltd. | OLED display panel, method for manufacturing the same and display device |
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