CN203465697U - Array substrate, optical touch screen and display device - Google Patents
Array substrate, optical touch screen and display device Download PDFInfo
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- CN203465697U CN203465697U CN201320407292.1U CN201320407292U CN203465697U CN 203465697 U CN203465697 U CN 203465697U CN 201320407292 U CN201320407292 U CN 201320407292U CN 203465697 U CN203465697 U CN 203465697U
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- touch
- film transistor
- array base
- base palte
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Abstract
The utility model provides an array substrate, an optical touch screen and a display device. The array substrate comprises a first underlayer substrate, grid lines and data lines, wherein the grid lines and the data lines are positioned on the first underlayer substrate, a plurality of pixel units are defined by the grid lines and the data lines, and a first thin film transistor and a pixel electrode connected with the first thin film transistor are formed in each pixel unit. The array substrate is characterized by further comprising light-sensing units, touch scanning lines and touch reading lines, wherein the light-sensing units are connected with the touch scanning lines and the touch reading lines, the touch scanning lines are used for starting the light-sensing units, and the touch reading lines are used for reading current signals generated by the light-sensing units. According to the technical scheme, the problem that the thin film transistors are exposed to ambient lights and aged is prevented, and the power consumption of the array substrate is reduced.
Description
Technical field
The utility model belongs to touch screen technology field, is specifically related to a kind of array base palte, optical touch screen and display device.
Background technology
Touch-screen, as a kind of new input equipment, is compared and is had good ease for use with mouse input mode with traditional keyboard.Along with the development of touching technique, touch screen technology is divided into two classes at present: externally positioned type touch-screen and internally-arranged type touch-screen.Externally positioned type touch-screen is a touching device is set on optical touch screen and forms, and the high and thick degree of externally positioned type touch-screen cost is larger.Internally-arranged type touch-screen is owing to being incorporated in optical touch screen, with respect to the touch-screen of other types can accomplish gentlier, thinner, and operation reduces, thereby can reduce costs, and realizes the two-in-one of touch-control and demonstration.
The optical touch screen of existing dependence surround lighting work, when no touch occurs, the thin film transistor (TFT) in touch sensor can produce leakage current while being subject to the irradiation of surround lighting, and now leakage current is larger; When having the generation of touch, surround lighting is blocked, and the leakage current now producing in thin film transistor (TFT) is less, thereby can judge to touch, occurs.
In prior art, at least there are the following problems: rely in the optical touch screen of surround lighting work, because thin film transistor (TFT) long term exposure is under surround lighting, so thin film transistor (TFT) is easily aging; And when no touch occurs, because the irradiation of surround lighting causes thin film transistor (TFT), produce larger leakage current, thereby increased the power consumption of optical touch screen.
Utility model content
The utility model provides a kind of array base palte, optical touch screen and display device, and it can avoid thin film transistor (TFT) long term exposure under surround lighting and the problem of aging producing and the power consumption that has reduced optical touch screen.
For achieving the above object, the utility model provides a kind of array base palte, comprise: the first underlay substrate, be positioned at grid line and data line on described the first underlay substrate, described grid line and described data line limit a plurality of pixel cells, the pixel electrode that is formed with the first film transistor in described pixel cell and is electrically connected to described the first film transistor, it is characterized in that, described array base palte also comprises photosensitive unit, touch-control sweep trace and touch-control read line, described photosensitive unit connects described touch-control sweep trace and touch-control read line, described touch-control sweep trace is used for opening photosensitive unit, described touch-control read line is for reading the current signal of the generation of photosensitive unit.
Alternatively, described photosensitive unit comprises photosensitive film transistor, and the grid of described photosensitive film transistor and first utmost point are connected in described touch-control read line, and second utmost point of described photosensitive film transistor is connected in described touch-control sweep trace.
Alternatively, be formed on the figure that stops on the first film transistor.
Alternatively, described in, stop that figure is amorphous silicon figure.
Alternatively, three corresponding described photosensitive units of described pixel cell.
Alternatively, described touch-control sweep trace is at least one in described grid line.
For achieving the above object, the utility model provides a kind of optical touch screen, comprises above-mentioned array base palte, and described optical touch screen also comprises backlight, in described backlight, is provided with detection light source.
Alternatively, described detection light source is infrared light supply.
Alternatively, described optical touch screen also comprises color membrane substrates, and the transistorized position of corresponding described sensitization is provided with filter layer inside described color membrane substrates.
For achieving the above object, the utility model provides a kind of display device, comprises above-mentioned optical touch screen.
A kind of array base palte that the utility model provides, optical touch screen and display device, this array base palte comprises: the first underlay substrate, be positioned at grid line and data line on the first underlay substrate, grid line and data line limit a plurality of pixel cells, the pixel electrode that is formed with the first film transistor in pixel cell and is electrically connected to the first film transistor, array base palte also comprises photosensitive unit, touch-control sweep trace and touch-control read line, photosensitive unit connects touch-control sweep trace and touch-control read line, touch-control sweep trace is used for opening photosensitive unit, touch-control read line is for reading the current signal of the generation of photosensitive unit, it can avoid thin film transistor (TFT) long term exposure under surround lighting and the problem of aging producing and the power consumption that has reduced array base palte.
Accompanying drawing explanation
The floor map of a kind of array base palte that Fig. 1 provides for the utility model embodiment mono-;
Fig. 2 is the partial structurtes diagrammatic cross-section of array base palte in Fig. 1;
Fig. 3 (a) and 3(b) be respectively no touch in the present embodiment one and have the working timing figure of touch-control sweep trace and touch-control read line while touching;
Fig. 4 is the hierarchy schematic diagram of the array base palte in optical touch screen and color membrane substrates in the utility model embodiment bis-.
Embodiment
For making those skilled in the art understand better the technical solution of the utility model, a kind of array base palte, optical touch screen and the display device that the utility model are provided below in conjunction with the drawings and specific embodiments are described in further detail.
The floor map of a kind of array base palte that Fig. 1 provides for the utility model embodiment mono-, Fig. 2 is the partial structurtes diagrammatic cross-section of array base palte in Fig. 1, as depicted in figs. 1 and 2, this array base palte 11 comprises: the first underlay substrate 5, be positioned at grid line and data line on the first underlay substrate 5, grid line and data line limit a plurality of pixel cells, the pixel electrode 1 that is formed with the first film transistor T 1 in pixel cell and is electrically connected to the first film transistor T 1, array base palte 11 also comprises photosensitive unit 2, touch-control sweep trace X and touch-control read line Y, photosensitive unit 2 connects touch-control sweep trace X and touch-control read line Y, touch-control sweep trace X is used for opening photosensitive unit 2, the current signal that touch-control read line Y produces for reading photosensitive unit 2.
Particularly, first utmost point of the first film transistor T 1 is connected with data line, and the grid of the first film transistor T 1 is connected with grid line, and second utmost point of the first film transistor T 1 is electrically connected to pixel electrode 1.In actual applications, external drive circuit provides gate drive voltage to grid line, thereby controls the unlatching of the first film transistor T 1 or close; External drive circuit provides data voltage to data line, and this data voltage is used for controlling the first film transistor T 1 and carries out pixel demonstration.
It should be noted that, in the utility model, first utmost point or second of the first film transistor T 1 and photosensitive film transistor T2 can be extremely source electrode or drain electrode.During practical application, first utmost point can be used as source electrode, and correspondingly, second utmost point is as drain electrode; Or first utmost point can be used as drain electrode, correspondingly, second utmost point is as source electrode.
Preferably, as shown in Figure 2, for guaranteeing the normal steady operation of the first film transistor T 1, on the first film transistor T 1, be formed with to absorb to reflex to and stop figure 3 on the first film transistor T 1.Particularly, this stops that figure 3 is for amorphous silicon figure.On the first film transistor T 1, cover one deck and stop figure 3, this stops that figure 3 is for absorbing the detection light that reflexes to the first film transistor T 1, avoid the first film transistor T 1 to produce leakage current owing to detecting light, thereby prevented the picture quality problem that leakage current causes.In actual applications, detecting light can be for example infrared light.In the present embodiment, this stops that figure 3 is for amorphous silicon figure, because the energy gap of amorphous silicon is in 1.2 electron volts left and right, approach with ultrared photon energy, therefore can absorb infrared light, after absorbing infrared light, photon arrives conduction band the electron excitation of amorphous silicon, to improve the electric conductivity of amorphous silicon, therefore on the first film transistor T 1, covering one deck stops figure 3, can be the infrared Absorption reflexing on it, thus prevent the impact of infrared light on the electric property of amorphous silicon in the first film transistor T 1.In Fig. 2,5 is the first underlay substrate, and in the arranged outside of the first underlay substrate 5, having lower polaroid 6,4 is the first film transistor.
In the present embodiment, preferably, three corresponding photosensitive units 2 of pixel cell.That is to say, the corresponding photosensitive unit 2 of every three pixel cells, photosensitive unit 2 can lessly take for carrying out the space of pixel demonstration, thereby improves aperture opening ratio, further improves picture disply quality.Further, array base palte 11 also comprises amplifier 13.Fig. 3 (a) is the working timing figure of touch-control sweep trace and touch-control read line during no touch in the present embodiment one, the working timing figure of touch-control sweep trace and touch-control read line when Fig. 3 (b) touches for having in the present embodiment one.Fig. 3 (a) and 3(b) take the capable touch-control sweep trace of n and n row touch-control read line generation touch-control and describe as example, in figure, VX(n-1), VX(n), VX(n+1) represent that respectively n-1 is capable, n is capable and the signal of the capable touch-control sweep trace of n+1, IY(m) represent the signal waveform of m row touch-control read line.Concrete principle is as Fig. 3 (a) with 3(b), when no touch occurs, there is no Infrared irradiation in photosensitive film transistor time, if t1 in Fig. 3 (a) is to as shown in the t2 stage, when touch-control sweep trace is in noble potential, now the leakage current on sensitization transistor is very little, so the signal waveform IY(m reading on touch-control read line) if t1 in Fig. 3 (a) is to as shown in the t2 stage; When having the generation of touch, while having infrared light to reflex in photosensitive film transistor by finger, if t1 in Fig. 3 (b) is to as shown in the t2 stage, when touch-control sweep trace is in noble potential, now in photosensitive film transistor, can produce a large amount of photo-generated carriers, produce and detect electric current, detect electric current and give processor analysis after amplifier 13 amplifies, therefore the signal waveform IY(m reading on touch-control read line), if t1 in Fig. 3 (b) is to as shown in the t2 stage, can judge thus the coordinate of touch point; When touch-control sweep trace is in electronegative potential, now no matter whether there is Infrared irradiation in photosensitive film transistor, on touch-control read line, can not produce detection electric current.
In the technical scheme of the array base palte that the present embodiment provides, this array base palte comprises photosensitive unit, touch-control sweep trace and touch-control read line, photosensitive unit connects touch-control sweep trace and touch-control read line, touch-control sweep trace is used for opening photosensitive unit, touch-control read line is for reading the current signal of generation of photosensitive unit, and the technical scheme of the present embodiment has been avoided thin film transistor (TFT) long term exposure under surround lighting and the problem of aging producing and the power consumption that has reduced array base palte.
The utility model embodiment bis-provides a kind of optical touch screen, comprises array base palte and backlight, is provided with detection light source in backlight.
Preferably, optical touch screen also comprises color membrane substrates, and the position of corresponding photosensitive film transistor is provided with filter layer inside color membrane substrates.Filter layer, for filtering part natural light, passes through infrared light, thereby reduces the impact of extraneous natural light on photosensitive film transistor.In actual applications, preferably, filter layer can be colour matrix figure, and colour matrix figure comprises any two kinds of combinations in red Matrix Pattern, green Matrix Pattern and three kinds of Matrix Patterns of blue Matrix Pattern.Certainly, this filter layer also can have the optical device that filtering part natural light passes through infrared light for other.
Fig. 4 is the hierarchy schematic diagram of the array base palte in optical touch screen and color membrane substrates in the utility model embodiment bis-, as shown in Figure 4, optical touch screen comprises array base palte 11 and the color membrane substrates 10 being oppositely arranged, and array base palte 11 comprises: photosensitive film transistor 12, be positioned at the lower polaroid 6 of the first underlay substrate 5 belows; Color membrane substrates 10 comprises: the second underlay substrate 8, be positioned at the second underlay substrate 8 tops upper polaroid 7, be formed at the filter layer 9 on the second underlay substrate 8.
In the present embodiment, the position of the corresponding photosensitive film transistor 12 in color membrane substrates 10 inner sides is provided with filter layer 9.Filter layer 9, for filtering part natural light, passes through infrared light, thereby reduces the impact of extraneous natural light on photosensitive film transistor T2.In actual applications, preferably, filter layer 9 can be colour matrix figure, and colour matrix figure comprises any two kinds of combinations in red Matrix Pattern, green Matrix Pattern and three kinds of Matrix Patterns of blue Matrix Pattern.Certainly, this filter layer 9 also can have the optical film that filtering part natural light passes through infrared light for other.
Preferably, photosensitive film transistor 12 is infrared light sensor film transistor, and detection light source is infrared light supply.Particularly, can be by red light emitting diode being set in backlight as the infrared light supply that detects light is provided.In actual applications, detecting light can be for example infrared light.When this optical touch screen of finger touch, can be by infrared light reflection in photosensitive unit, concrete is to reflex in photosensitive film transistor, the particular location that touch-control occurs just can be detected like this by touch-control sweep trace and touch-control read line.In the present embodiment, array base palte 11 comprises and stops figure 3, this stops that figure 3 is for amorphous silicon figure, because the energy gap of amorphous silicon is in 1.2 electron volts left and right, approach with ultrared photon energy, therefore can absorb infrared light, after absorbing infrared light, photon arrives conduction band the electron excitation of amorphous silicon, to improve the electric conductivity of amorphous silicon, therefore on the first film transistor T 1, covering one deck stops figure 3, can be the infrared Absorption reflexing on it, thus prevent the impact of infrared light on the electric property of amorphous silicon in the first film transistor T 1.
When no touch occurs, there is no Infrared irradiation in photosensitive film transistor 12 time, when touch-control sweep trace is in noble potential, now the leakage current on sensitization transistor is very little, when having the generation of touch, there is infrared light reflection in photosensitive film transistor time, when touch-control sweep trace is in noble potential, now in photosensitive film transistor 12, can produce a large amount of photo-generated carriers, produce and detect electric current, detect electric current and give processor analysis after amplifier amplifies, can judge thus the coordinate of touch point; And when touch-control sweep trace is in electronegative potential, now no matter whether have Infrared irradiation in photosensitive film transistor 12, on touch-control read line, can not produce detection electric current.
A kind of optical touch screen that the present embodiment provides comprises backlight, array base palte and color membrane substrates, in backlight, be provided with detection light source, detection light source provides infrared light, inside color membrane substrates, the position of corresponding photosensitive film transistor is provided with filter layer, and the optical touch screen of the present embodiment has been avoided optical touch screen long term exposure under the surround lighting and the problem of aging producing and the power consumption that has reduced optical touch screen.
The utility model embodiment tri-provides a kind of display device, and this display device adopts the optical touch screen described in above-described embodiment two.
The display device that the present embodiment provides, by adopting the optical touch screen in embodiment bis-, this optical touch screen comprises backlight, array base palte and color membrane substrates, in backlight, be provided with detection light source, detection light source provides infrared light, inside color membrane substrates, the position of corresponding photosensitive film transistor is provided with filter layer, the power consumption that it can effectively solve the problem of aging producing under surround lighting due to display device long term exposure and reduce display device.
Be understandable that, above embodiment is only used to principle of the present utility model is described and the illustrative embodiments that adopts, yet the utility model is not limited to this.For those skilled in the art, in the situation that not departing from spirit of the present utility model and essence, can make various modification and improvement, these modification and improvement are also considered as protection domain of the present utility model.
Claims (10)
1. an array base palte, comprise: the first underlay substrate, be positioned at grid line and data line on described the first underlay substrate, described grid line and described data line limit a plurality of pixel cells, the pixel electrode that is formed with the first film transistor in described pixel cell and is electrically connected to described the first film transistor, it is characterized in that, described array base palte also comprises photosensitive unit, touch-control sweep trace and touch-control read line, described photosensitive unit connects described touch-control sweep trace and touch-control read line, described touch-control sweep trace is used for opening photosensitive unit, the current signal that described touch-control read line produces for reading photosensitive unit.
2. array base palte according to claim 1, it is characterized in that, described photosensitive unit comprises photosensitive film transistor, and the grid of described photosensitive film transistor and first utmost point are connected in described touch-control read line, and second utmost point of described photosensitive film transistor is connected in described touch-control sweep trace.
3. array base palte according to claim 1, is characterized in that, also comprises: be formed on the figure that stops on the first film transistor.
4. array base palte according to claim 3, is characterized in that, described in stop that figure is amorphous silicon figure.
5. array base palte according to claim 1, is characterized in that, three corresponding described photosensitive units of described pixel cell.
6. array base palte according to claim 1, is characterized in that, described touch-control sweep trace is at least one in described grid line.
7. an optical touch screen, is characterized in that, comprises the array base palte described in claim 1 to 6 any one, and described optical touch screen also comprises backlight, in described backlight, is provided with detection light source.
8. optical touch screen according to claim 7, is characterized in that, described detection light source is infrared light supply.
9. optical touch screen according to claim 7, is characterized in that, described optical touch screen also comprises color membrane substrates, and the transistorized position of corresponding described sensitization is provided with filter layer inside described color membrane substrates.
10. a display device, is characterized in that, comprises the arbitrary described optical touch screen of claim 7 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320407292.1U CN203465697U (en) | 2013-07-09 | 2013-07-09 | Array substrate, optical touch screen and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320407292.1U CN203465697U (en) | 2013-07-09 | 2013-07-09 | Array substrate, optical touch screen and display device |
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| CN203465697U true CN203465697U (en) | 2014-03-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320407292.1U Expired - Fee Related CN203465697U (en) | 2013-07-09 | 2013-07-09 | Array substrate, optical touch screen and display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103324362A (en) * | 2013-07-09 | 2013-09-25 | 合肥京东方光电科技有限公司 | Array substrate, optical touch screen and display device |
| WO2017202180A1 (en) * | 2016-05-23 | 2017-11-30 | 京东方科技集团股份有限公司 | Touchscreen display device |
-
2013
- 2013-07-09 CN CN201320407292.1U patent/CN203465697U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103324362A (en) * | 2013-07-09 | 2013-09-25 | 合肥京东方光电科技有限公司 | Array substrate, optical touch screen and display device |
| WO2017202180A1 (en) * | 2016-05-23 | 2017-11-30 | 京东方科技集团股份有限公司 | Touchscreen display device |
| US10394406B2 (en) | 2016-05-23 | 2019-08-27 | Boe Technology Group Co., Ltd. | Touch display device |
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| GR01 | Patent grant | ||
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140305 Termination date: 20210709 |