CN203444736U - Pixel circuit and display device - Google Patents

Pixel circuit and display device Download PDF

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Publication number
CN203444736U
CN203444736U CN201320368649.XU CN201320368649U CN203444736U CN 203444736 U CN203444736 U CN 203444736U CN 201320368649 U CN201320368649 U CN 201320368649U CN 203444736 U CN203444736 U CN 203444736U
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China
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organic light
light emitting
emitting diode
electrode
image element
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CN201320368649.XU
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谭文
祁小敬
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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Abstract

The utility model relates to the technical field of organic light emitting display, and specifically relates to a pixel circuit and a display device which comprises the pixel circuit. The pixel circuit comprises at least two electroluminescence elements. An electrode of the first polarity of each electroluminescence element is connected with a current control end. An electrode of the second polarity of each electroluminescence element is connected with a driving unit which supplies a driving current to the electroluminescence elements. According to the utility model, the pixel circuit is provided with at least two independent-control organic light-emitting diodes, thereby respectively controlling the organic light-emitting diodes to be in the state of light-emitting display in turn, protecting a single organic light-emitting diode from being in the state of direct-current bias light emitting for a long time, alleviating the polarization speed of organic materials, enabling the threshold voltages of the organic light-emitting diodes to be stable, improving the luminous efficiencies of organic light-emitting diodes, and greatly prolonging the service lives of the organic light-emitting diodes.

Description

Image element circuit and display device
Technical field
The utility model relates to organic light emitting display technical field, the display device that is specifically related to a kind of image element circuit and comprises this image element circuit.
Background technology
Compare traditional liquid crystal panel, AMOLED (Active Matrix Organic Light Emitting Diode, active matrix organic light-emitting diode) panel has the features such as reaction velocity is faster, contrast is higher, visual angle is wider, therefore, AMOLED has obtained the increasingly extensive concern of display technique developer.
Active matrix organic light-emitting diode drives luminous by image element circuit.Basic pixel circuit of the prior art is comprised of two thin film transistor (TFT)s (Thin-Film Transistor, TFT) and an electric capacity, concrete as shown in Fig. 1 and Fig. 2: to comprise driving transistors T1, switching transistor T2 and memory capacitance C1.Wherein, the conducting of switching transistor T1 and cut-off are by scanning voltage signal V sCANcontrol, for controlling data voltage V dATAinput; Driving transistors T1 is used to Organic Light Emitting Diode OLED supply drive current, and memory capacitance C1 is used to the grid of driving transistors T1 to provide and maintains voltage; Shown in Fig. 1, being the image element circuit of the driving transistors driving of N channel type, is the image element circuit of the driving transistors driving of P channel type shown in Fig. 2.
In the image displaying time of each frame, owing to only there being an Organic Light Emitting Diode in above-mentioned image element circuit, therefore in the image displaying time of each frame its always in luminescence display state.Like this, because Organic Light Emitting Diode is for a long time in direct current biasing luminance, the polarityization of organic material is accelerated, cause the built in field (electric field forming due to inner effect in semiconductor or insulator) of Organic Light Emitting Diode to strengthen rapidly thereupon, thereby cause Organic Light Emitting Diode threshold voltage to increase, greatly reduce the luminescence efficiency of Organic Light Emitting Diode, therefore, significantly shortened the serviceable life of Organic Light Emitting Diode.
Utility model content
(1) technical matters that will solve
The purpose of this utility model is to provide a kind of can improve the Organic Light Emitting Diode image element circuit in serviceable life, promotes the luminescence efficiency of Organic Light Emitting Diode simultaneously; Further, the utility model also provides a kind of display device that comprises above-mentioned image element circuit, to improve the serviceable life of display device.
(2) technical scheme
Technical solutions of the utility model are as follows:
A kind of image element circuit, comprise at least two electroluminescent cells, described in each, the electrode of the first polarity of electroluminescent cell is connected with a current controling end, and described in each, the electrode of the second polarity of electroluminescent cell is connected with the driver element for described electroluminescent cell supply drive current.
Preferably, described driver element comprises on-off element, energy-storage travelling wave tube and driving element; The first end of described on-off element is connected with data line, and the second end is connected with the first end of described energy-storage travelling wave tube; The first input end of described driving element connects the first end of driving power, the second input end is connected with the second end of described on-off element and the first end of described energy-storage travelling wave tube respectively, and output terminal is connected with the electrode of the second polarity of electroluminescent cell described in each respectively; The second end of described energy-storage travelling wave tube is connected with driving power the second end.
Preferably, described electroluminescent cell is two.
Preferably, described electroluminescent cell comprises the first Organic Light Emitting Diode and the second Organic Light Emitting Diode, and described on-off element is switching transistor, and described energy-storage travelling wave tube is memory capacitance, and described driving element is driving transistors;
The grid of described switching transistor is connected with scan signal line, and source electrode is connected with data line, and drain electrode is connected with the first end of described memory capacitance;
The grid of described driving transistors is connected with the drain electrode of described switching transistor and the first end of described memory capacitance respectively, source electrode is connected with the first end of driving power, and drain electrode is connected with the electrode of the second polarity of the first Organic Light Emitting Diode and the second Organic Light Emitting Diode respectively;
The second end of described memory capacitance is connected with driving power the second end;
The first end of described the first Organic Light Emitting Diode connects the first current controling end, and the first end of described the second Organic Light Emitting Diode connects the second current controling end.
Preferably, described driving transistors is N channel-type thin film transistor (TFT); The source electrode of described driving transistors is connected with the high level output end of described driving power, drain electrode respectively with the anodic bonding of described the first Organic Light Emitting Diode and the second Organic Light Emitting Diode; The second end of described memory capacitance is connected with the low level output end of described driving power.
Preferably, described driving transistors is P channel-type thin film transistor (TFT); The source electrode of described driving transistors is connected with the low level output end of described driving power, and drain electrode is connected with the negative electrode of described the first Organic Light Emitting Diode and the second Organic Light Emitting Diode respectively; The second end of described memory capacitance is connected with the high level output end of described driving power.
The utility model also provides a kind of display device that comprises above-mentioned any one image element circuit.
(3) beneficial effect
Image element circuit provided by the utility model, by at least two independent Organic Light Emitting Diodes of controlling are set, control respectively each Organic Light Emitting Diode in turn in luminescence display state, avoided single Organic Light Emitting Diode for a long time in direct current biasing luminance, slowed down the polarity speed of organic material, make Organic Light Emitting Diode threshold voltage stable, improved the luminescence efficiency of Organic Light Emitting Diode, significantly extended the serviceable life of Organic Light Emitting Diode.
Accompanying drawing explanation
Fig. 1 is the image element circuit structure schematic diagram of N-type thin film transistor (TFT) in prior art;
Fig. 2 is the image element circuit structure schematic diagram of P type thin film transistor (TFT) in prior art;
Fig. 3 is the structural representation of a kind of image element circuit in the utility model embodiment;
Fig. 4 is the schematic diagram of the equivalent electrical circuit under a kind of duty of image element circuit shown in Fig. 3;
Fig. 5 is the schematic diagram of the equivalent electrical circuit under the another kind of duty of image element circuit shown in Fig. 3;
Fig. 6 is the structural representation of another kind of image element circuit in the utility model embodiment;
Fig. 7 is that the N-type thin film transistor (TFT) of image element circuit shown in Fig. 6 is realized circuit diagram;
Fig. 8 is that the P type thin film transistor (TFT) of image element circuit shown in Fig. 6 is realized circuit diagram;
Fig. 9 is the driving period figure of image element circuit shown in Fig. 7;
Figure 10 is that image element circuit shown in Fig. 7 is at the schematic diagram of the equivalent electrical circuit of T2 period;
Figure 11 is that image element circuit shown in Fig. 7 is at the schematic diagram of the equivalent electrical circuit of T4 period.
Embodiment
Below in conjunction with drawings and Examples, embodiment of the present utility model is described further.Following examples are only for the utility model is described, but are not used for limiting scope of the present utility model.
Image element circuit provided by the utility model, each image element circuit is connected with scan signal line and data line, and comprise at least two electroluminescent cells, the electrode of the first polarity of each electroluminescent cell is connected with a current controling end, and the electrode of the second polarity is connected with the driver element for electroluminescent cell supply drive current; By controlling respectively each electroluminescent cell one after the other in luminescence display state, avoided single electroluminescent cell for a long time in direct current biasing luminance, thereby extended the serviceable life of electroluminescent cell.For the convenient complicacy of controlling and not increasing image element circuit as far as possible, the electroluminescent cell number in the present embodiment is two, and the Organic Light Emitting Diode of being used widely at AMOLED of take below describes as example.
Image element circuit as shown in Figure 3, comprises the first Organic Light Emitting Diode D1 and the second Organic Light Emitting Diode D2 that the electrode of the second polarity is connected with control module respectively, the first end of the first Organic Light Emitting Diode D1 and the first current controling end V dSconnect the first end of the second Organic Light Emitting Diode D2 and the second current controling end V sDconnect, above-mentioned connected mode makes the first current controling end V dSwith the second current controling end V sDavailable current opposite in direction; By utilizing the Current Control of a pair of opposite direction, switch in turn ground and control two organic light emitting diodes and replace luminescence display, reduce half fluorescent lifetime of each organic light emitting diode, make it at not luminous period reverse bias simultaneously; A concrete example is as shown in Fig. 4 and Fig. 5.In Fig. 4, the first current controling end V dSfor high level V dD, the first organic light emitting diode D1 is from the first current controling end V dSflow to luminescence display under the Current Control of driver element; The second current controling end V sDfor low level V sS, the second organic light emitting diode D2 reverse bias, alleviates its inner ion polarity, extends its serviceable life.In Fig. 5, the second current controling end V sDfor high level V dD, the second organic light emitting diode D2 is from the second current controling end V sDflow to luminescence display under the Current Control of driver element; The first current controling end V dSfor low level V sS, the first organic light emitting diode D1 reverse bias, alleviates its inner ion polarity, extends its serviceable life.
As shown in Figure 6, the driver element in the present embodiment comprises on-off element, energy-storage travelling wave tube and driving element; On-off element is for controlling the writing of data voltage of data line, and its first end is connected with data line, and the second end is connected with the first end of energy-storage travelling wave tube; Driving element is used to organic illuminating element that drive current is provided, its first input end connects the first end of driving power, the second input end is connected with the second end of on-off element and the first end of energy-storage travelling wave tube respectively, and output terminal is connected with the electrode of the second polarity of each Organic Light Emitting Diode respectively; Energy-storage travelling wave tube is used for storing data voltage, and its second end is connected with driving power the second end.
In Fig. 6, a kind of specific implementation of image element circuit as shown in Figure 7; Wherein on-off element is switching transistor T2, and energy-storage travelling wave tube is memory capacitance C1, and driving element is driving transistors T1, and switching transistor T2 and driving transistors T1 are N channel-type thin film transistor (TFT).Scan signal line provides sweep signal to come conducting or cutoff switch transistor T 2, data line by switching transistor T2 to data writing voltage signal in pixel.The grid of switching transistor T2 is connected with scan signal line, and source electrode is connected with data line, and drain electrode is connected with the first end of memory capacitance C1; Under the control of the sweep signal providing at scan signal line, switching transistor T2 provides the data voltage signal of data line and keeps this voltage by memory capacitance C1 to memory capacitance C1.The grid of driving transistors T1 is connected with the drain electrode of switching transistor T2 and the first end of memory capacitance C1 respectively, source electrode is connected with the high level output end of driving power, drain electrode respectively with the anodic bonding of the first Organic Light Emitting Diode D1 and the second Organic Light Emitting Diode D2; The second end of memory capacitance C1 is connected with the low level output end of driving power; Driving transistors T1 is subject to the control of data voltage that data line provides and memory capacitance C1 storage voltage and conducting or cut-off.The negative electrode of the first Organic Light Emitting Diode D1 connects the first current controling end V dS, the negative electrode of the second Organic Light Emitting Diode D2 connects the second current controling end V sD.
Those skilled in the art are easy to draw that image element circuit provided by the utility model can change P channel-type thin-film transistor circuit easily into, specifically as shown in Figure 8, mainly be with the syndeton difference of N channel-type thin-film transistor circuit, the source electrode of driving transistors T1 is connected with the low level output end of driving power, and drain electrode is connected with the negative electrode of the first Organic Light Emitting Diode D1 and the second Organic Light Emitting Diode D2 respectively; The second end of memory capacitance C1 is connected with the high level output end of driving power.Certainly, image element circuit provided by the utility model can change CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor (CMOS)) circuit easily into; The image element circuit providing in the present embodiment is provided, does not repeat them here.
The utility model also provides a kind of driving method that drives above-mentioned image element circuit, and it mainly comprises the charging period and drives display time interval; Each frame only has a current controling end to control the electroluminescent cell being connected with this current controling end in working hour luminous, and it is not luminous that all the other current controling ends are controlled the electroluminescent cell being connected with this current controling end; Two frames of arbitrary neighborhood are in working hour, and luminous electroluminescent cell is different; Can make so different electroluminescent cell one after the others luminous, avoid single electroluminescent cell for a long time in direct current biasing luminance, thereby extend the serviceable life of electroluminescent cell.The driving method that is applied to image element circuit shown in Fig. 7 of take below describes as example, and it drives period schematic diagram as shown in Figure 9, in this period figure, illustrated at two adjacent frames in working hour, and the scanning voltage signal V of scan signal line sCAN, data line data voltage V dATA, the first current controling end V dSand the second current controling end V sDthe variation of Current Control.
Wherein, the first charging period T1:
In this period, carry out following operation: at scan signal line, apply high level scanning voltage signal actuating switch transistor T 2, the data voltage on data line writes memory capacitance C1; The first current controling end V dSfor low level V sS, control the first Organic Light Emitting Diode D1 luminous; The second current controling end V sDfor high level V dD, control the second Organic Light Emitting Diode D2 reverse bias; But owing to charging the period, data voltage need to write memory capacitance, like this may be unstable to causing the grid supply voltage of driving transistors T1, affect the stability of photoluminescence of Organic Light Emitting Diode, therefore, in the present embodiment, in the charging period, also can control the first Organic Light Emitting Diode reverse bias and control the second Organic Light Emitting Diode reverse bias by the second current controling end by the first current controling end, avoid unstable luminous appearance.
First drives display time interval T2:
This period equivalent electrical circuit as shown in Figure 10; Carry out following operation: at scan signal line, apply low level scanning voltage signal cutoff switch transistor T 2; The first current controling end V dSfor low level V sS, control data voltage that the first Organic Light Emitting Diode D1 stores in memory capacitance C1 luminous under driving; The second current controling end V sDfor high level V dD, control the second Organic Light Emitting Diode D2 reverse bias.
The second charging period T3:
In this period, carry out following operation: at scan signal line, apply high level scanning voltage signal actuating switch transistor T 2, the data voltage on data line writes memory capacitance C1; The second current controling end V sDfor low level V sS, control the second Organic Light Emitting Diode D2 luminous; The first current controling end V dSfor high level V dD, control the first Organic Light Emitting Diode D1 reverse bias; But owing to charging the period, data voltage need to write memory capacitance, like this may be unstable to causing the grid supply voltage of driving transistors T1, affect the stability of photoluminescence of Organic Light Emitting Diode, therefore, in the present embodiment, in the charging period, also can control the first Organic Light Emitting Diode reverse bias and control the second Organic Light Emitting Diode reverse bias by the second current controling end by the first current controling end, avoid unstable luminous appearance.
Second drives display time interval T4:
This period equivalent electrical circuit as shown in Figure 11; Carry out following operation: at scan signal line, apply low level scanning voltage signal cutoff switch transistor T 2; The second current controling end V sDfor low level V sS, control data voltage that the second Organic Light Emitting Diode D2 stores in memory capacitance C1 luminous under driving; The first current controling end V dSfor high level V dD, control the first Organic Light Emitting Diode D1 reverse bias.
In the present embodiment, provide in pixel circuit drive method, because two frames of arbitrary neighborhood are in working hour, two Organic Light Emitting Diode one after the other luminescence displays, avoided single electroluminescent cell for a long time in direct current biasing luminance, slowed down the polarity speed of organic material, make Organic Light Emitting Diode threshold voltage stable, improved the luminescence efficiency of Organic Light Emitting Diode, significantly extended the serviceable life of Organic Light Emitting Diode.
The utility model also provides a kind of display device that comprises above-mentioned any one image element circuit; Because the image element circuit using has longer serviceable life relatively, therefore, also obtained accordingly prolongation the serviceable life of this display device, and quality is more reliable.
Above embodiment is only for illustrating the utility model; and be not limitation of the utility model; the those of ordinary skill in relevant technologies field; in the situation that not departing from spirit and scope of the present utility model; can also make a variety of changes and modification, therefore all technical schemes that are equal to also belong to protection category of the present utility model.

Claims (7)

1. an image element circuit, it is characterized in that, comprise at least two electroluminescent cells, described in each, the electrode of the first polarity of electroluminescent cell is connected with a current controling end respectively, and described in each, the electrode of the second polarity of electroluminescent cell is all connected with the driver element for described electroluminescent cell supply drive current.
2. image element circuit according to claim 1, is characterized in that, described driver element comprises on-off element, energy-storage travelling wave tube and driving element; The first end of described on-off element is connected with data line, and the second end is connected with the first end of described energy-storage travelling wave tube; The first input end of described driving element connects the first end of driving power, the second input end is connected with the second end of described on-off element and the first end of described energy-storage travelling wave tube respectively, and output terminal is connected with the electrode of the second polarity of electroluminescent cell described in each respectively; The second end of described energy-storage travelling wave tube is connected with driving power the second end.
3. image element circuit according to claim 2, is characterized in that, described electroluminescent cell is two.
4. image element circuit according to claim 3, it is characterized in that, two described electroluminescent cells are the first Organic Light Emitting Diode and the second Organic Light Emitting Diode, and described on-off element is switching transistor, described energy-storage travelling wave tube is memory capacitance, and described driving element is driving transistors;
The grid of described switching transistor is connected with scan signal line, and source electrode is connected with data line, and drain electrode is connected with the first end of described memory capacitance;
The grid of described driving transistors is connected with the drain electrode of described switching transistor and the first end of described memory capacitance respectively, source electrode is connected with the first end of driving power, and drain electrode is connected with the electrode of the second polarity of the first Organic Light Emitting Diode and the second Organic Light Emitting Diode respectively;
The second end of described memory capacitance is connected with the second end of driving power;
The electrode of the first polarity of described the first Organic Light Emitting Diode connects the first current controling end, and the electrode of the first polarity of described the second Organic Light Emitting Diode connects the second current controling end.
5. image element circuit according to claim 4, is characterized in that, described driving transistors is N channel-type thin film transistor (TFT); The source electrode of described driving transistors is connected with the high level output end of described driving power, drain electrode respectively with the anodic bonding of described the first Organic Light Emitting Diode and the second Organic Light Emitting Diode; The second end of described memory capacitance is connected with the low level output end of described driving power.
6. image element circuit according to claim 4, is characterized in that, described driving transistors is P channel-type thin film transistor (TFT); The source electrode of described driving transistors is connected with the low level output end of described driving power, and drain electrode is connected with the negative electrode of described the first Organic Light Emitting Diode and the second Organic Light Emitting Diode respectively; The second end of described memory capacitance is connected with the high level output end of described driving power.
7. a display device, is characterized in that, comprises the image element circuit described in claim 1-6 any one.
CN201320368649.XU 2013-06-25 2013-06-25 Pixel circuit and display device Expired - Lifetime CN203444736U (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103325340A (en) * 2013-06-25 2013-09-25 京东方科技集团股份有限公司 Pixel circuit, pixel circuit driving method and display device
WO2016110021A1 (en) * 2015-01-05 2016-07-14 京东方科技集团股份有限公司 Pixel structure, display panel, and display device
CN107544177A (en) * 2016-06-28 2018-01-05 群创光电股份有限公司 Display device
CN108682389A (en) * 2018-05-16 2018-10-19 上海瀚莅电子科技有限公司 Pixel circuit and display device
CN110136636A (en) * 2018-02-08 2019-08-16 三星显示有限公司 Display device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103325340A (en) * 2013-06-25 2013-09-25 京东方科技集团股份有限公司 Pixel circuit, pixel circuit driving method and display device
WO2014205888A1 (en) * 2013-06-25 2014-12-31 京东方科技集团股份有限公司 Pixel circuit, pixel circuit drive method, display panel, display device, and electronic product
US9269299B2 (en) 2013-06-25 2016-02-23 Chengdu Boe Optoelectronics Technology Co., Ltd. Pixel circuit, method for driving pixel circuit, and display panel
WO2016110021A1 (en) * 2015-01-05 2016-07-14 京东方科技集团股份有限公司 Pixel structure, display panel, and display device
US9842542B2 (en) 2015-01-05 2017-12-12 Boe Technology Group Co., Ltd. Display apparatus having a pixel structure for driving a plurality of organic light-emitting diodes
CN107544177A (en) * 2016-06-28 2018-01-05 群创光电股份有限公司 Display device
CN107544177B (en) * 2016-06-28 2021-01-26 群创光电股份有限公司 Display device
CN110136636A (en) * 2018-02-08 2019-08-16 三星显示有限公司 Display device
CN110136636B (en) * 2018-02-08 2023-11-24 三星显示有限公司 display device
CN108682389A (en) * 2018-05-16 2018-10-19 上海瀚莅电子科技有限公司 Pixel circuit and display device

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Granted publication date: 20140219