CN203414980U - IC card based on RFID system applications - Google Patents
IC card based on RFID system applications Download PDFInfo
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- CN203414980U CN203414980U CN201320372618.1U CN201320372618U CN203414980U CN 203414980 U CN203414980 U CN 203414980U CN 201320372618 U CN201320372618 U CN 201320372618U CN 203414980 U CN203414980 U CN 203414980U
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- electric capacity
- diode
- nonpolar electric
- polar capacitor
- chip microcomputer
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Abstract
The utility model diskloses an IC card based on RFID system applications, which comprises a first diode, a second diode, a third diode, a fourth diode, a first non-polar capacitor, a second non-polar capacitor, a third non-polar capacitor, a fourth non-polar capacitor, a fifth non-polar capacitor, a first polar capacitor, a second polar capacitor, a voltage stabilizer, a single-chip microcomputer, a crystal oscillator, a resistor and a triode. Data transmission from a passive responder to a reader is achieved by adopting the RFID technology. The intelligent IC card sends data carried by itself to the reader in a feedback way through energy provided by the reader. The reader performs corresponding operations according to received information.
Description
Technical field
The utility model relates to a kind of RFID technology, relates in particular to a kind of IC-card based on rfid system application.
Background technology
The developing history of smart card is not remote, and all parts of the world development is unbalanced, wherein Europe develop the earliest, best.Intellective IC card comes from the European and Japanese of the seventies, and the thought of processor being inserted in IC-card card being proposed by Frenchman has afterwards obtained accepting extensively, thereby because it has the corrupt practice that perfect cryptographic function has effectively solved smart card.Smart card has obtained developing rapidly at 1977-1998 subsequently.At the nineties initial stage, smart card starts to be applied to the fields such as charge of GSM digital mobile communication, CATV (cable television).In the U.S., smart card development is relatively slow, but along with smart card has an immense impact in the European successful use ，Qi U.S., however, the U.S. in fields such as smart card techniques still in rank first.At present in China, along with the lifting of the continuing to increase of governability and supporting dynamics, technical research level, will there is deep variation in IC market competition structure.In the period that Ji Nian，Shi China IC-card system applies from now on develops in depth, China's IC-card System Market general layout will be orderly by unordered trend, and market competition will be unlimited by limited trend, and IC-card System Market will progressively move to maturity.But for most advanced and sophisticated CPU card and non-contact type IC card intellectual radio-frequency card fabrication technology and corresponding reading and writing card apparatus technology thereof, be still in a backward condition.This has greatly restricted the development of IC-card industry, particularly, in requiring the financial industry of high security and confidentiality, has restricted enforcement and the development of China's Golden Card Program.
Utility model content
The purpose of this utility model provides a kind of simple in structure with regard to being in order to address the above problem, the powerful IC-card based on rfid system application.
The utility model is achieved through the following technical solutions above-mentioned purpose:
The utility model comprises the first diode, the second diode, the 3rd diode, the 4th diode, the first nonpolar electric capacity, the second nonpolar electric capacity, the 3rd nonpolar electric capacity, the 4th nonpolar electric capacity, the 5th nonpolar electric capacity, the first polar capacitor, the second polar capacitor, voltage stabilizer, single-chip microcomputer, crystal oscillator, resistance and triode, the collector of described triode is connected with the cathode output end of described the 3rd diode with the electrode input end of described the first diode by inductance simultaneously, the electrode input end of described the second diode is connected with the cathode output end of described the 4th diode, the electrode input end of described the 3rd diode, the equal ground connection in one end of the electrode input end of described the 4th diode and described the first nonpolar electric capacity, the other end while of described the first nonpolar electric capacity and the cathode output end of described the first diode, the cathode output end of described the second diode, one end of described the second nonpolar electric capacity is connected with the input end of described voltage stabilizer, the other end of described the second nonpolar electric capacity is connected with the cathode output end of described the first polar capacitor with one end of described the 3rd nonpolar electric capacity simultaneously, the output terminal while of described voltage stabilizer and the other end of described the 3rd nonpolar electric capacity, the electrode input end of described the first polar capacitor, the 20 end of the electrode input end of described the second polar capacitor and described single-chip microcomputer is connected, the earth terminal ground connection of described voltage stabilizer, the first end of described single-chip microcomputer is connected with the cathode output end of described the second polar capacitor and one end of described resistance simultaneously, the 3rd end of described single-chip microcomputer is connected with the base stage of described triode, the five terminal of described single-chip microcomputer is connected with described the 4th one end of nonpolar electric capacity and one end of described crystal oscillator simultaneously, the 6th end of described single-chip microcomputer is connected with one end of described the 5th nonpolar electric capacity with the other end of described crystal oscillator simultaneously, the tenth end ground connection of described single-chip microcomputer, the other end of described resistance is connected with the other end of described the 5th nonpolar electric capacity with the other end of described the 4th nonpolar electric capacity simultaneously, the grounded emitter of described triode.
Further, described resistance sizes is 10 kilo-ohms, the size of described the second nonpolar electric capacity and described the 3rd nonpolar electric capacity is 0.1uf, and the size of described the first polar capacitor is 10uf, and the size of described the 4th nonpolar electric capacity and described the 5th nonpolar electric capacity is 20pf.
The beneficial effects of the utility model are:
The utility model has been realized and has been used the passive type transponder of RFID technology to the data transmission of reader, the energy that intellective IC card provides by reader, and by self-contained data feedback, to reader, reader carries out corresponding operating according to the information of receiving.
Accompanying drawing explanation
Fig. 1 is circuit theory diagrams of the present utility model.
In figure: D1-the first diode, D2-the second diode, D3-the 3rd diode, D4-the 4th diode, the nonpolar electric capacity of C1-first, the nonpolar electric capacity of C2-second, C3-the 3rd nonpolar electric capacity, C6-the 4th nonpolar electric capacity, C7-the 5th nonpolar electric capacity, C4-the first polar capacitor, C5-the second polar capacitor, ZD-voltage stabilizer, U-single-chip microcomputer, Z-crystal oscillator, R-resistance, VT-triode.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail:
As shown in Figure 1, the utility model comprises the first diode D1, the second diode D2, the 3rd diode D3, the 4th diode D4, the first nonpolar capacitor C 1, the second nonpolar capacitor C 2, the 3rd nonpolar capacitor C 3, the 4th nonpolar capacitor C 6, the 5th nonpolar capacitor C 7, the first polar capacitor C4, the second polar capacitor C5, voltage stabilizer ZD, single-chip microcomputer U, crystal oscillator Z, resistance R and triode VT, the collector of triode VT is connected with the cathode output end of the 3rd diode D3 with the electrode input end of the first diode D1 by inductance simultaneously, the electrode input end of the second diode D2 is connected with the cathode output end of the 4th diode D4, the electrode input end of the 3rd diode D3, the equal ground connection in one end of the electrode input end of the 4th diode D4 and the first nonpolar capacitor C 1, the other end while of the first nonpolar capacitor C 1 and the cathode output end of the first diode D1, the cathode output end of the second diode D2, one end of the second nonpolar capacitor C 2 is connected with the input end of voltage stabilizer ZD, the other end of the second nonpolar capacitor C 2 is connected with the cathode output end of the first polar capacitor C4 with one end of the 3rd nonpolar capacitor C 3 simultaneously, the output terminal while of voltage stabilizer ZD and the other end of the 3rd nonpolar capacitor C 3, the electrode input end of the first polar capacitor C4, the 20 end of the electrode input end of the second polar capacitor C5 and single-chip microcomputer U is connected, the earth terminal ground connection of voltage stabilizer ZD, the first end of single-chip microcomputer U is connected with the second cathode output end of polar capacitor C5 and one end of resistance R simultaneously, the 3rd end of single-chip microcomputer U is connected with the base stage of triode VT, the five terminal of single-chip microcomputer U is connected with one end of crystal oscillator Z with one end of the 4th nonpolar capacitor C 6 simultaneously, the 6th end of single-chip microcomputer U is connected with one end of the 5th nonpolar capacitor C 7 with the other end of crystal oscillator Z simultaneously, the tenth end ground connection of single-chip microcomputer U, the other end of resistance R is connected with the other end of the 5th nonpolar capacitor C 7 with the other end C6 of the 4th nonpolar electric capacity simultaneously, the grounded emitter of triode VT, resistance R size is 10 kilo-ohms, the size of the second nonpolar capacitor C 2 and the 3rd nonpolar capacitor C 3 is 0.1uf, the size of the first polar capacitor C4 is 10uf, the size of the 4th nonpolar capacitor C 6 and the 5th nonpolar capacitor C 7 is 20pf, rectification circuit in circuit is the bridge rectifier circuit of standard, in order to reduce power attenuation, the first diode D1, the second diode D2, the 3rd diode D3 and the 4th diode D4 select the germanium diode that conduction voltage drop is 0.3V, the radio-frequency component that the first nonpolar capacitor C 1 may contain in can filtering rectification after-current, also there is certain pressure stabilization function, the electric current that alternating current is exported after rectification has preferably level and smooth degree, can serve as the power supply of circuit in general, but magnitude of voltage now is still subject to the impact of aerial voltage fluctuation and load variations, the voltage of exporting after rectification is because the impact of various factors is unsettled often, in order to make output voltage stabilization, here used mu balanced circuit part, the effect of mu balanced circuit is exactly autostable output voltage, make output voltage not be subject to the impact of other factors, here the restriction of voltage stabilizer ZD internal current and hot turn-off characteristic are wanted better, make it to be specially adapted to the situation of overload, what the utility model adopted is the single-chip microcomputer of 20 leads ends encapsulation, in port used, the 20 end is low side fixed power source voltage end, first end is the RESET input, the 3rd end is serial delivery outlet, five terminal is input end oscillator inverting amplifier and internal clock generator, the 6th end is the outer middle broken ends of fractured bone, the tenth end is earth terminal, what in this circuit, triode VT adopted is NPN type.
Claims (2)
1. the IC-card based on rfid system application, it is characterized in that: comprise the first diode, the second diode, the 3rd diode, the 4th diode, the first nonpolar electric capacity, the second nonpolar electric capacity, the 3rd nonpolar electric capacity, the 4th nonpolar electric capacity, the 5th nonpolar electric capacity, the first polar capacitor, the second polar capacitor, voltage stabilizer, single-chip microcomputer, crystal oscillator, resistance and triode, the collector of described triode is connected with the cathode output end of described the 3rd diode with the electrode input end of described the first diode by inductance simultaneously, the electrode input end of described the second diode is connected with the cathode output end of described the 4th diode, the electrode input end of described the 3rd diode, the equal ground connection in one end of the electrode input end of described the 4th diode and described the first nonpolar electric capacity, the other end while of described the first nonpolar electric capacity and the cathode output end of described the first diode, the cathode output end of described the second diode, one end of described the second nonpolar electric capacity is connected with the input end of described voltage stabilizer, the other end of described the second nonpolar electric capacity is connected with the cathode output end of described the first polar capacitor with one end of described the 3rd nonpolar electric capacity simultaneously, the output terminal while of described voltage stabilizer and the other end of described the 3rd nonpolar electric capacity, the electrode input end of described the first polar capacitor, the 20 end of the electrode input end of described the second polar capacitor and described single-chip microcomputer is connected, the earth terminal ground connection of described voltage stabilizer, the first end of described single-chip microcomputer is connected with the cathode output end of described the second polar capacitor and one end of described resistance simultaneously, the 3rd end of described single-chip microcomputer is connected with the base stage of described triode, the five terminal of described single-chip microcomputer is connected with described the 4th one end of nonpolar electric capacity and one end of described crystal oscillator simultaneously, the 6th end of described single-chip microcomputer is connected with one end of described the 5th nonpolar electric capacity with the other end of described crystal oscillator simultaneously, the tenth end ground connection of described single-chip microcomputer, the other end of described resistance is connected with the other end of described the 5th nonpolar electric capacity with the other end of described the 4th nonpolar electric capacity simultaneously, the grounded emitter of described triode.
2. the IC-card based on rfid system application according to claim 1, it is characterized in that: described resistance sizes is 10 kilo-ohms, the size of described the second nonpolar electric capacity and described the 3rd nonpolar electric capacity is 0.1uf, the size of described the first polar capacitor is 10uf, and the size of described the 4th nonpolar electric capacity and described the 5th nonpolar electric capacity is 20pf.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320372618.1U CN203414980U (en) | 2013-06-26 | 2013-06-26 | IC card based on RFID system applications |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320372618.1U CN203414980U (en) | 2013-06-26 | 2013-06-26 | IC card based on RFID system applications |
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| Publication Number | Publication Date |
|---|---|
| CN203414980U true CN203414980U (en) | 2014-01-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320372618.1U Expired - Lifetime CN203414980U (en) | 2013-06-26 | 2013-06-26 | IC card based on RFID system applications |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104252637A (en) * | 2013-06-26 | 2014-12-31 | 成都新方洲信息技术有限公司 | IC card based on RFID system application |
-
2013
- 2013-06-26 CN CN201320372618.1U patent/CN203414980U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104252637A (en) * | 2013-06-26 | 2014-12-31 | 成都新方洲信息技术有限公司 | IC card based on RFID system application |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: JIANGSU NEW YIDI INTELLIGENT TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: CHENGDU XINFANGZHOU INFORMATION TECHNOLOGY CO., LTD. Effective date: 20140715 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 610000 CHENGDU, SICHUAN PROVINCE TO: 215001 SUZHOU, JIANGSU PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20140715 Address after: 215001, No. 3, building No. 10, Suzhou house, Suzhou District, Jiangsu, Suzhou Patentee after: JIANGSU NEW YIDI INTELLIGENT TECHNOLOGY CO.,LTD. Address before: 1, No. 5, No. 564, No. 1388, Tianfu Road, Chengdu hi tech Zone, Sichuan, Chengdu, 610000 Patentee before: CHENGDU NEWISLAND INFORMATION TECHNOLOGY Co.,Ltd. |
|
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: SHENZHEN WTSD TECHNOLOGY DEVELOPMENT Co.,Ltd. Assignor: CHENGDU NEWISLAND INFORMATION TECHNOLOGY Co.,Ltd. Contract record no.: 2014440020204 Denomination of utility model: IC card based on RFID system application Granted publication date: 20140129 License type: Exclusive License Record date: 20140612 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| ASS | Succession or assignment of patent right |
Owner name: CHENGDU XINFANGZHOU INFORMATION TECHNOLOGY CO., LT Free format text: FORMER OWNER: JIANGSU NEW YIDI INTELLIGENT TECHNOLOGY CO., LTD. Effective date: 20150127 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 215001 SUZHOU, JIANGSU PROVINCE TO: 610000 CHENGDU, SICHUAN PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20150127 Address after: 1, No. 1388, No. 5, 610000, Tianfu Avenue, Chengdu hi tech Zone, Sichuan, 564 Patentee after: CHENGDU NEWISLAND INFORMATION TECHNOLOGY Co.,Ltd. Address before: 215001, No. 3, building No. 10, Suzhou house, Suzhou District, Jiangsu, Suzhou Patentee before: JIANGSU NEW YIDI INTELLIGENT TECHNOLOGY CO.,LTD. |
|
| ASS | Succession or assignment of patent right |
Owner name: SHENZHEN WANTONG SHUNDA TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: CHENGDU XINFANGZHOU INFORMATION TECHNOLOGY CO., LTD. Effective date: 20150326 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 610000 CHENGDU, SICHUAN PROVINCE TO: 518000 SHENZHEN, GUANGDONG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20150326 Address after: 518000 Guangdong city in Shenzhen Province, Futian District Shennan Road Design Creative Industrial Park 8 Building 1 floor Patentee after: SHENZHEN WTSD TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: 1, No. 1388, No. 5, 610000, Tianfu Avenue, Chengdu hi tech Zone, Sichuan, 564 Patentee before: CHENGDU NEWISLAND INFORMATION TECHNOLOGY Co.,Ltd. |
|
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518000 Guangdong city in Shenzhen Province, Futian District Shennan Road Design Creative Industrial Park 8 Building 1 floor Patentee after: SHENZHEN WONDERFUL STAR TECHNOLOGY., Ltd. Address before: 518000 Guangdong city in Shenzhen Province, Futian District Shennan Road Design Creative Industrial Park 8 Building 1 floor Patentee before: SHENZHEN WTSD TECHNOLOGY DEVELOPMENT Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20140129 |
|
| CX01 | Expiry of patent term |