CN203313124U - Circuit for improving additional efficiency of power of power amplifier - Google Patents
Circuit for improving additional efficiency of power of power amplifier Download PDFInfo
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- CN203313124U CN203313124U CN2013202991048U CN201320299104U CN203313124U CN 203313124 U CN203313124 U CN 203313124U CN 2013202991048 U CN2013202991048 U CN 2013202991048U CN 201320299104 U CN201320299104 U CN 201320299104U CN 203313124 U CN203313124 U CN 203313124U
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Abstract
The utility model provides a circuit for improving additional efficiency of power of a power amplifier. The circuit comprises a power unit and a biasing module. Transistor base electrodes in the power unit are all connected with an input signal, and transistor connectors in the power unit are all connected with a signal output end. Transistor emitting electrodes are connected together through a steady resistor. Resistance values of the steady resistor connected with the transistor emitting electrodes are symmetric from outside to inside and sequentially increase. Each transistor base electrode is connected with the biasing module which provides biasing currents for transistors in the power unit, so that the currents of the transistor base electrodes in the power unit are sequentially reduced from outside to inside. The biasing states of the currents are different, the transistors work in different states, direct-current power consumption is reduced in the state of outputting the same power, the power additional efficiency of the amplifier is increased, the steady resistor which is gradually reduced from outside to inside is utilized, the hot accumulation effect in the middle of the power unit is improved, the additional efficiency of the power is further improved, and linearity is improved.
Description
Technical field
The present invention relates to the integrated power amplifier technical field, particularly a kind of circuit that improves the power amplifier added efficiency.
Background technology
The function of power amplifier is exactly by the power amplification of signal.In the communications field, power amplifier is the most important device of transmitter front ends, therefore, and the good and bad linearity of communication system and the quality of power consumption of directly affecting of the performance of power amplifier.For communication system, the power consumption of power amplifier itself is just very large, basically can account for more than 60% of system power dissipation.Therefore, the power consumption that reduces power amplifier for the service time that extends system, reduce power consumption, reduce system bulk weight and play a part crucial.
Power added efficiency (PAE, Power Added Efficiency) the power output Pout that refers to power amplifier deducts input power Pin again divided by DC consumption power P DC, because convert in the transfer process of power output in input power, must dissipation power.
The method of the raising power amplifier added efficiency of commonly using at present, mainly contains the envelope separation and recovery technology (EER), out-phase are modulated (LINC) and Doherty technology.
It is more difficult that the shortcoming of EER technology is to remove to modulate the signal with high PAR peak to average ratio with it, and the modulation efficiency of envelope passage does not reach 100%, has reduced overall efficiency, and its modulation accuracy and performance can be along with time and temperature and change.The factors such as the amplitude modulation(PAM) AM of modulator and phase-modulation PM will affect the distortion output product of amplifier, can produce additional high-order product, and the linearity is affected.
LINC is very responsive to the gain on two paths and phase difference, and any matching error of gain and phase place all can cause eliminating distorted signal fully, will affect the linearity like this.Because being difficult to coupling, gain and phase place make LINC seldom apply so far.
Doherty is for above two kinds of technology, and implementation is fairly simple, but the linearity is poor, need to promote its linearity in conjunction with technology such as predistortion, feedforwards, will make like this scheme more complicated that becomes, thereby reduces the reliability of whole system.
Therefore, how to provide a kind of simple in structure, the circuit that reliability is higher, the power added efficiency that improves power amplifier are those skilled in the art's technical issues that need to address.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of circuit that improves the power amplifier added efficiency, can improve the power added efficiency of power amplifier, and simple in structure, and reliability is higher.
The invention provides a kind of circuit that improves the power amplifier added efficiency, comprising: power cell and biasing module;
Described power cell comprises at least three transistors;
Transistorized base stage in described power cell all links together and connects input signal;
Transistor collector in described power cell all links together as signal output part;
Emitter in described power cell is all by linking together after steady resistance; The resistance of the steady resistance that in power cell, transistorized emitter connects symmetry from outside to inside increases successively;
The transistorized base stage of each in described power cell connects biasing module;
Described biasing module, be used to the transistor in described power cell that bias current is provided, and makes transistorized base current ecto-entad in described power cell reduce successively.
Preferably, also comprise input matching network;
Described power cell base stage connects input matching network and connects input signal.
Preferably, also comprise output matching network;
Described power cell collector electrode connects the input of output matching network, and the output of output matching network is as signal output part.
Preferably, also comprise bias supply;
The transistor base of the power cell of described amplifier also is linked together and connects described bias supply.
Preferably, described biasing module is bias voltage source;
In described power cell, the bias voltage of the correspondence of all crystals pipe is identical, the bias current difference.
Preferably, the transistor adopted in described power cell is all identical.
Compared with prior art, the present invention has the following advantages:
Under initial condition, due to transistor biasings all in power cell under identical voltage, and steady resistance difference, therefore, the transistor biasing electric current that steady resistance is little is large, the transistor biasing electric current that steady resistance is large is little, even closes.When the power of input signal increased gradually, due to the existence of automatic biasing effect, transistor was just opened and is entered amplification mode gradually.The tradition amplifier allows all transistors be in opening always, and DC power is large, and efficiency is low.The circuit that this invention provides has effectively utilized transistor opening process gradually dynamically, can effectively improve the power added efficiency of power amplifier.In addition, in the present invention, emitter-base bandgap grading steady resistance ecto-entad is the distribution increased gradually, makes the DC power of intermediary device lower than peripheral components, produce heat still less, to the poor compensation of carrying out power of middle heat dissipation environment, can further improve thermal effect, thereby improve efficiency and the linearity.Circuit structure provided by the invention is simple, and reliability is higher.
The accompanying drawing explanation
Fig. 1 is circuit embodiments one schematic diagram of raising power amplifier added efficiency provided by the invention;
Fig. 2 is circuit embodiments two schematic diagrames of raising power amplifier added efficiency provided by the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Referring to Fig. 1, this figure is circuit embodiments one schematic diagram of raising power amplifier added efficiency provided by the invention.
The circuit of the raising power amplifier added efficiency that the present embodiment provides comprises: power cell 100 and biasing module 200;
Described power cell 100 comprises at least three transistors; In Fig. 1, take three transistors as example is described, be respectively Q1, Q2 and Q3.
Be understandable that, according in practical application to the demand difference of watt level, a plurality of transistor parallel connections can be set in power cell 100, to realize larger power stage.
In described power cell 100, transistorized base stage all links together and connects input signal, is connected to simultaneously a biasing module; The base stage of Q1 in Fig. 1, Q2 and Q3 all is connected input signal.
In described power cell 100, the collector electrode of transistor Q1, Q2 and Q3 links together as signal output part;
In described power cell 100, transistorized emitter-base bandgap grading is connected in series a steady resistance; Steady resistance value ecto-entad symmetry increases successively; Emitter series connection the first steady resistance Re1 of Q1, emitter series connection the second steady resistance Re2 of Q2, emitter series connection the 3rd steady resistance Re3 of Q3.
Described biasing module 200 provides identical bias voltage for the transistor in described power cell 100.
In Fig. 1, the power cell that three transistors of take form describes as example.Transistor Q1, Q2, Q3 base stage link together and are connected into input signal; The collector electrode of transistor Q1, Q2, Q3 links together as output; Transistor Q1, Q2, Q3 all connect identical biasing module 200.
The circuit that the present embodiment provides, under initial condition, the steady resistance difference because bias voltage is identical, therefore, the bias current of emission is non-uniform Distribution.When the power of input signal hour, input signal is not enough for example, only can make the transistor of steady resistance minimum open so that all transistors are opened, other transistor turn-offs, like this, whole input signals transistor that steady resistance is little thus amplifies.Along with the increase of input signal power, the existence of automatic biasing effect makes other transistor also progressively open, thereby efficient input signal is carried out to power amplification, can improve like this power added efficiency of power amplifier.In addition, in the distribution of steady resistance, it is symmetrical that the employing ecto-entad progressively increases, and makes the DC power of inter-transistor be less than the DC power of edge transistors, thereby compensate the heat accumulation effect caused because middle heat dissipation environment is poor.Circuit structure provided by the invention is simple, and reliability is higher.
Below in conjunction with a physical circuit figure, introduce the operation principle of circuit provided by the invention, wherein, the power cell of take comprises that three transistors are introduced as example.Be understandable that, transistorized number can be selected different numbers according to actual needs.
Referring to Fig. 2, this figure is circuit embodiments two schematic diagrames of raising power amplifier added efficiency provided by the invention.
The circuit of the raising power amplifier added efficiency that the present embodiment provides, can also comprise input matching network 300;
The effect of input matching network 300 is in order to realize the coupling between signal source output impedance and this power amplifier input impedance, makes power amplifier obtain maximum exciting power;
In described power cell 100, the base stage of transistor Q1, Q2, Q3 all links together and passes through described input matching network 300 and connects input signal IN.
Be understandable that, the circuit that the present embodiment provides can also comprise output matching network 400;
Similar with the effect of input matching network 300, the effect of output matching network 400 is that the guaranteed output amplifier outputs to the power maximum of load for the load impedance by actual is converted to the desired optimum impedance of this power amplifier.
Transistor Q1, Q2 in described power cell 100 and the collector electrode of Q3 all link together and are connected the input of output matching network 400, and the output of output matching network 400 is as the signal output part of this circuit.
Preferably, the circuit in the present embodiment, can also comprise bias supply VCC;
The collector electrode of the transistor Q1 in described power cell and the transistor from amplifier (Q2 and Q3) all links together and is connected described bias supply VCC.
It should be noted that, described biasing module is bias voltage source;
In described power model, transistorized bias voltage source is all identical.
The described bias voltage source that the present embodiment provides realized by voltage source and a resistance, and as shown in Figure 2, described bias voltage source 200 comprises: resistance R 1 and bias voltage source Vbias;
Described emitter connects described steady resistance.That is, Q1 is connected to power cell 100 emitters by the first steady resistance Re1; Q2 is connected to 100 emitters by the second steady resistance Re2; Q3 is connected to 100 emitters by the 3rd steady resistance Re3.
It should be noted that, the resistance on both sides is symmetrically distributed, and the ecto-entad symmetry increases successively, i.e. Re1=Re3<Re2.
It should be noted that, the transistor described in the implementation case in power cell is all identical, identical refers to transistorized measure-alikely herein, comprises length and width and mutual conductance.
Below in conjunction with Fig. 1, operation principle is described.
Input signal enters from input IN, after input matching network 300 impedance transformation, can pass through Q1, Q2, Q3 amplification.
Under initial condition, due to steady resistance Re1=Re3<Re2, the emitter current of Q1, Q3 pipe is identical, all is greater than the bias current of Q2 pipe.
When input signal hour, the automatic biasing effect is very weak, input signal is not enough to make transistor all to open, the Q2 pipe is closed, Q1, Q3 open, all signals are managed amplification by Q1, Q3.
Along with the increase of input power, the automatic biasing effect is more and more significant, and now the base input signal of Q2 pipe increases, the Q2 pipe is opened, and the part signal Q2 that flows through amplifies, and dynamically the process of turn-on transistor makes transistor Q2 effectively utilize, thereby reduced idle DC power, raised the efficiency.
To sum up, the present invention adopts symmetrical structure transistor Q1, Q2, the Q3 formation power scale unit that the steady resistance ecto-entad increases gradually to carry out circuit design, make that only Q1, Q3 pipe carry out work under small-power, under high-power condition, open simultaneously Q2, carry out the amplification of part signal, make whole power amplifier no matter under low-power input or high power initial conditions, can effectively utilize transistor, improved power added efficiency, guarantee that simultaneously the inter-transistor DC power is little, reduce the heat accumulation effect, further increase efficiency, improve the linearity.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction.Although the present invention discloses as above with preferred embodiment, yet not in order to limit the present invention.Any those of ordinary skill in the art, do not breaking away from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention,, all still belong in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (6)
1. a circuit that improves the power amplifier added efficiency, is characterized in that, comprising: power cell and biasing module;
Described power cell comprises at least three transistors;
Transistorized base stage in described power cell all links together and connects input signal;
Transistor collector in described power cell all links together as signal output part;
Emitter in described power cell is all by linking together after steady resistance; The resistance of the steady resistance that in power cell, transistorized emitter connects symmetry from outside to inside increases successively;
The transistorized base stage of each in described power cell connects biasing module;
Described biasing module, be used to the transistor in described power cell that bias current is provided, and makes transistorized base current ecto-entad in described power cell reduce successively.
2. the circuit of raising power amplifier added efficiency according to claim 1, is characterized in that, also comprises input matching network;
Described power cell base stage connects input matching network and connects input signal.
3. the circuit of raising power amplifier added efficiency according to claim 1, is characterized in that, also comprises output matching network;
Described power cell collector electrode connects the input of output matching network, and the output of output matching network is as signal output part.
4. the circuit of raising power amplifier added efficiency according to claim 1, is characterized in that, also comprises bias supply;
The transistor base of the power cell of described amplifier also is linked together and connects described bias supply.
5. the circuit of raising power amplifier added efficiency according to claim 1, is characterized in that, described biasing module is bias voltage source;
In described power cell, the bias voltage of the correspondence of all crystals pipe is identical, the bias current difference.
6. the circuit of raising power amplifier added efficiency according to claim 1, is characterized in that, the transistor adopted in described power cell is all identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013202991048U CN203313124U (en) | 2013-05-28 | 2013-05-28 | Circuit for improving additional efficiency of power of power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013202991048U CN203313124U (en) | 2013-05-28 | 2013-05-28 | Circuit for improving additional efficiency of power of power amplifier |
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| Publication Number | Publication Date |
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| CN203313124U true CN203313124U (en) | 2013-11-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2013202991048U Expired - Lifetime CN203313124U (en) | 2013-05-28 | 2013-05-28 | Circuit for improving additional efficiency of power of power amplifier |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103338009A (en) * | 2013-05-28 | 2013-10-02 | 苏州英诺迅科技有限公司 | Circuit for improving power added efficiency of power amplifier |
| CN104022741A (en) * | 2014-06-16 | 2014-09-03 | 东南大学苏州研究院 | Pseudo-differential power amplifier with power addition efficiency improved |
-
2013
- 2013-05-28 CN CN2013202991048U patent/CN203313124U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103338009A (en) * | 2013-05-28 | 2013-10-02 | 苏州英诺迅科技有限公司 | Circuit for improving power added efficiency of power amplifier |
| CN104022741A (en) * | 2014-06-16 | 2014-09-03 | 东南大学苏州研究院 | Pseudo-differential power amplifier with power addition efficiency improved |
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Granted publication date: 20131127 |