CN203311954U - Laminated PTC (positive temperature coefficient) thermistor - Google Patents
Laminated PTC (positive temperature coefficient) thermistor Download PDFInfo
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- CN203311954U CN203311954U CN2013203083577U CN201320308357U CN203311954U CN 203311954 U CN203311954 U CN 203311954U CN 2013203083577 U CN2013203083577 U CN 2013203083577U CN 201320308357 U CN201320308357 U CN 201320308357U CN 203311954 U CN203311954 U CN 203311954U
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Abstract
The utility model provides a laminated PTC (positive temperature coefficient) thermistor. In the laminated PTC (positive temperature coefficient) thermistor (1), a laminator (2) of a plurality of ceramic sheets (21) comprises end faces (S1 and S2) opposite to each other in the L-axis direction, connecting faces (S3 and S4) opposite to each other in the T-axis direction, and connecting faces (S5 and S6) opposite to each in the W-axis direction. In addition, at least two internal electrodes (3) are opposite to each other in the T-axis direction inside the laminator (2) and include a first internal electrode (31) close to the connecting face (S3) and a second internal electrode (32) close to the connecting face (S4). The distances in the T-axis direction from the internal electrode (31) to the connecting faces (S3 and S4) are set to be t1 and t2, the greater one in t1 and t2 is set to be tmax, and the smaller one in t1 and t2 is set to be tmin. Furthermore, distances in the W-axis direction from any one of the internal electrode (3) to the connecting faces (S5 and S6) are set to be w1 and w2, the greater one in w1 and w2 is set to be wmax, and the smaller one in w1 and w2 is set to be wmin. In the supposition, t1, t2, w1 and w2 are the value which meets the following conditions: t1 or t2 divided by w1 or w2 is greater than or equal to 0.60 and less than or equal to 2.00, tmax divided by tmin is less than or equal to 2.0, and wmax divided by wmin is less than or equal to 2.0.
Description
Technical field
The present invention relates to a kind of stacked PTC thermistor (being designated hereinafter simply as thermistor) that possesses duplexer and be formed on a plurality of internal electrodes in duplexer, wherein, duplexer comprises a plurality of potsherds.
Background technology
In the past, as this thermistor, for example had following this structure, comprising: the element body that alternately is laminated with potsherd and internal electrode; And with internal electrode, be electrically connected to and be separately positioned on the external terminal electrode (for example,, with reference to patent documentation 1) on two relative end faces of element body.
The prior art document
Patent documentation
Patent documentation: Japanese Patent Laid-Open 2012-204639 communique
Summary of the invention
Invent technical problem to be solved
In recent years, the electronic equipments such as mobile phone just are being tending towards miniaturization, densification, make the necessity of heat sink conception of electronic equipment more and more higher.Under this background, for overheated detection, the overcurrent protection of electronic equipment, the demand of thermistor improves day by day.Yet, when being installed to thermistor on substrate, make that the interarea of internal electrode is parallel with installed surface and heating temp when vertical is different.Thereby exist following problem: the difference of described heating temp can cause overheated detection characteristic, over-current protective feature to produce deviation.
Therefore, the object of the present invention is to provide a kind of can reduce the heating temperature difference and with internal electrode with respect to installed surface towards irrelevant thermistor.
The technical scheme that the technical solution problem adopts
For reaching above-mentioned purpose, one aspect of the present invention is for thermistor, comprise: duplexer, this duplexer is laminated with a plurality of potsherds in a first direction, and this duplexer comprises: first and second end face relative on second direction, first and second joint face relative on this first direction, roughly with this first and the third direction of this second direction quadrature on relative the 3rd and the 4th joint face; And at least two internal electrodes, these at least two internal electrodes are located at described duplexer inside in mode relative on described second direction, and these at least two internal electrodes comprise: near the first internal electrode of described the first joint face and the second internal electrode of close described the second joint face.
Will be along described first direction, distance till from described the first internal electrode to described the first joint face is made as t1, will be along described first direction, distance till from described the second internal electrode to described the second joint face is made as t2, and by t1 and t2 larger one be made as tmax, will be less one be made as tmin, will be along described third direction, distance till from any one internal electrode to described the 3rd joint face is made as w1, will be along described third direction, distance till from any one internal electrode to described the 4th joint face is made as w2, and by w1 and w2 larger one be made as wmax, will be less one be made as wmin, in this case, described t1, described t2, described w1, described w2 is the value that meets 0.60≤(t1 or t2)/(w1 or w2)≤2.00tmax/tmin≤2.0 and wmax/wmin≤2.0.
The invention effect
According to above-mentioned aspect, can provide a kind of reduce the heating temperature difference and with internal electrode with respect to installed surface towards irrelevant thermistor.
The accompanying drawing explanation
Fig. 1 means the stereogram of the product that complete of the thermistor that embodiments of the present invention 1 are related.
Fig. 2 is along with the parallel plane single-point line of TL A-A', the thermistor of Fig. 1 being completed to the cutaway view after product cut.
Fig. 3 is along with the parallel plane double dot dash line B-B' of WT, the thermistor of Fig. 1 being completed to the cutaway view after product cut.
Fig. 4 means that the thermistor of Fig. 1 completes the schematic diagram of mensuration system of the surface temperature of product.
Fig. 5 A means the schematic diagram that the assess sample of Fig. 4 is installed to the first installation method on substrate 8.
Fig. 5 B means the schematic diagram that the assess sample of Fig. 4 is installed to the second installation method on substrate 8.
Fig. 6 means the curve chart of the preferred value scope in the T gap of 1005 type thermistors/W gap.
Fig. 7 means the curve chart of the preferred value scope in the T gap of 2012 type thermistors/W gap.
Embodiment
" execution mode 1 "
Below, before the related thermistor of explanation embodiments of the present invention 1, first define the L axle shown in Fig. 1～Fig. 3, W axle, T axle.The L axle means the left and right directions (laterally) of thermistor 1, and more specifically, the L axle means roughly the second direction with the first end face S1 and the second end face S2 quadrature of duplexer 2, this first end face S1 and the second end face S2 on second direction relatively.The T axle means the above-below direction (thickness direction) of thermistor 1, more specifically, the T axle mean to be laminated with the first direction of a plurality of potsherds 21 and roughly with the first joint face S3 and the second joint face S4 quadrature of duplexer 2, and this first joint face S3 and the second joint face S4 are the party upwards relatively.The W axle is roughly vertical with L axle and T axle, means the fore-and-aft direction (vertically) of thermistor 1.In addition, the W axle means roughly the third direction vertical with the 3rd joint face S5 of duplexer 2 and the 4th joint face S6, and the 3rd joint face S5 and the 4th joint face S6 on third direction relatively.
" structure of thermistor "
In Fig. 1～Fig. 3, as basic structure, thermistor 1 comprises duplexer 2 and a plurality of internal electrode 3 with positive temperature characterisitic.In addition, thermistor 1 also comprises: 41,42, two the first filmings 51,52 of two outer electrodes and the auxiliary electrode 7 identical with internal electrode 3 quantity.In present embodiment, the example that possesses auxiliary electrode 7 is described, but thermistor 1 might not possess auxiliary electrode 7.
In addition, duplexer 2 has the size that is equivalent to 1005 types.In this case, L direction of principal axis length is approximately 1.0[mm], W direction of principal axis width is approximately 0.5[mm].T direction of principal axis thickness can be specified arbitrarily, as preference, selects 0.5[mm].
The potsherd 21 that above-mentioned duplexer 2 is made by stacked a plurality of ceramic materials by regulation (with reference to " example of thermistor manufacture method " described later) is formed.
In the example of Fig. 1～Fig. 3, be provided with at least two internal electrodes 31,32, using as a plurality of internal electrodes 3, and make they roughly with the LW plane parallel, and in the internal arrangement of duplexer 2 on the T direction of principal axis.Internal electrode 31 be take internal electrode 32 and is arranged on positive direction one side of T axle as benchmark.Here, in the present embodiment the quantity of internal electrode 3 being made as to two and describing, but be not limited to this, can be also more than three.
Each internal electrode 31,32 is by for example Ni(nickel) such metal material makes.
In addition, when from the T direction of principal axis, overlooking, each internal electrode 31,32 has rectangular shape long on the L direction of principal axis.In addition, each internal electrode 31,32 has the thickness of regulation on the T direction of principal axis.Here, in the present embodiment, the L direction of principal axis length of each internal electrode 31,32 is for example 780[μ m].W direction of principal axis width is at 40[μ m] above 460[μ m] below.In addition, for example select rightly suitable value, as T direction of principal axis thickness, 0.5[μ m]～2.0[μ m].
More specifically, internal electrode 31 possesses the first interarea S11 relative on the T direction of principal axis and the second interarea S12.Interarea S11 is positioned at positive direction one side of T axle with respect to interarea S12.In addition, in order to connect interarea S11, S12, internal electrode 31 possesses joint face S13～S16.Joint face S13, S14 are positioned at negative direction one side and positive direction one side of L axle, and are parallel to each other.Joint face S15, S16 are positioned at positive direction one side and negative direction one side of W axle, and are parallel to each other.
In addition, more specifically, internal electrode 32 possesses the first interarea S21 relative on the T direction of principal axis and the second interarea S22.Interarea S21 is positioned at positive direction one side of T axle with respect to interarea S22.In addition, in order to connect interarea S21, S22, internal electrode 32 possesses joint face S23～S26.Joint face S23, S24 are positioned at negative direction one side and positive direction one side of L axle, and are parallel to each other.Joint face S25, S26 are positioned at positive direction one side and negative direction one side of W axle, and are parallel to each other.
In a plurality of internal electrodes 3, internal electrode 31 is near joint face S3, and is formed between two potsherds 21 adjacent on the T direction of principal axis.Here, as shown in Figure 3, the T direction of principal axis distance (hereinafter referred to as a T gap) till will be from interarea S11 to joint face S3 is made as t1.In present embodiment, making t1 is 20[μ m] above 230[μ m] following value makes.This number range is in the situation that duplexer 2 is 1.0[mm] * 0.5[mm] * 0.5[mm], lower limit and the higher limit that can make.This point is applicable to w1, w2, t2 too.
In addition, about internal electrode 31, the W direction of principal axis distance (hereinafter referred to as a W gap) till will be from joint face S15 to joint face S5 is made as w1, and the W direction of principal axis distance (hereinafter referred to as the 2nd W gap) till will be from joint face S16 to joint face S6 is made as w2.W1, w2 are the 20[μ m as above-mentioned lower limit] above, as the 230[μ m of above-mentioned higher limit] below.
In addition, the joint face S13(left side of internal electrode 31) from end face S1, expose so that it is electrically connected to outer electrode 41.
In a plurality of internal electrodes 3, internal electrode 32 is near joint face S4, and is formed between two potsherds 21 adjacent on the T direction of principal axis.T direction of principal axis distance (hereinafter referred to as the 2nd T gap) till will be from interarea S22 to joint face S4 is made as t2.T2 is same as described above, at 20[μ m] more than, 230[μ m] below.
In addition, in the present embodiment, as a preference, set t2 for identical with t1 in fact value.Here it should be noted that the upper surface that is respectively formed at corresponding potsherd 21 due to internal electrode 31,32, therefore, t2 and t1 are also not quite identical.Yet much smaller than t1, t2, so this small difference can exert an influence to heat dissipation characteristics hardly due to the thickness of each internal electrode 31,32.
In addition, internal electrode 32 when from the T direction of principal axis, overlooking in fact and the mode that coincides of internal electrode 31 be formed between potsherd.Therefore, be a W gap till from joint face S25 to joint face S5, be the 2nd W gap till from joint face S26 to joint face S6.In addition, the joint face S24(right side of internal electrode 32) from end face S2, expose so that it is electrically connected to outer electrode 42.
In addition, the first filming 51,52 is for example by Sn(tin) form, and be formed on outer electrode 41,42.
In addition, in the present embodiment, as mentioned above, possess two auxiliary electrodes 71,72, using as a plurality of auxiliary electrodes 7. Auxiliary electrode 71,72 is identical with internal electrode 31,32, by for example Ni(nickel) such metal material makes.Auxiliary electrode 71 is arranged between the potsherd that is formed with internal electrode 31, apart from the joint face S14(right side of internal electrode 31) on the position of predetermined distance.Auxiliary electrode 72 is arranged between the potsherd that is formed with internal electrode 32, apart from the joint face S23(left side of internal electrode 32) on the position of predetermined distance.
" example of thermistor manufacture method "
Above-mentioned thermistor 1 roughly can be made by following the first operation～the 8th operation.
The first operation is as follows.At first, prepare ceramic matrix 2 initiation material (being raw material), be BaTiO
3, TiO
2, Nd
2O
3, MnCO
3Powder, and carry out weighing, to meet following formula (1), then be in harmonious proportion.
(Ba
0.998Nd
0.002)(Ti
0.9995Mn
0.0005)O
3…(1)
In addition, in following formula (1), also the Nd as the semiconductor agent can be changed as other rare earth elements such as La, Sm.
In ensuing the second operation, add pure water in the powder obtained to weighing in the first operation.To add the powder of pure water with zirconia ball, together mix and pulverized 16 hours, make afterwards its drying.This crushed material is carried out the pre-burned of two hours under about 1100 ° of C, obtain thus preburning powder.
In ensuing the 3rd operation, add organic bond, dispersant and water in the preburning powder obtained in the second operation.By they and zirconia ball mixed number hour together, obtain thus ceramic size.Skill in using a kitchen knife in cookery etc. is scraped in utilization makes this ceramic size form sheet, makes afterwards its drying.Consequently, obtain becoming the ceramic green sheet of potsherd 21.The thickness of this sheet material is for example 10～40[μ m].
In ensuing the 4th operation, Ni metal dust and organic bond are diffused in organic solvent, generate thus Ni internal electrode conductive paste.Utilize this conductive paste to carry out silk screen printing, thereby print the pattern that should become each internal electrode 3 on the interarea of ceramic green sheet.Here, printed patterns, to make the thickness after sintering be 0.5～2.0[μ m].By the 4th operation, obtain the ceramic green sheet with electrode pattern.
In ensuing the 5th operation, prepare the ceramic green sheet with electrode pattern of specified quantity and the ceramic green sheet without electrode pattern of specified quantity.They are carried out stacked, make t1, t2 after burning till be included in 20[μ m] above 230[μ m] in following scope, and be substantially identical value, and the T direction of principal axis thickness after making to burn till is about 0.5[mm].Now, because the quantity of internal electrode 3 in the present embodiment is two, therefore, utilizes without the stacked quantity of the ceramic green sheet of electrode pattern t1, t2 are adjusted to desired value.Duplexer to above-mentioned ceramic green sheet carries out crimping.Afterwards, the duplexer after crimping is cut into to the ceramic original chip of given size, burn till afterwards.Now, the cutting of carrying out makes w1, w2 be included in 20[μ m] above 230[μ m] in following scope and be roughly identical value.In addition, ceramic original chip is cut, making the L direction of principal axis length of the product that complete of thermistor 1 is 1.0[mm], W direction of principal axis width is 0.5[mm].
In ensuing the 6th operation, in atmosphere, approximately under 300 ° of C, the ceramic original chip obtained in above-mentioned the 5th operation is carried out to the ungrease treatment of 12 hours.Afterwards, at N
2/ H
2Reducing atmosphere under, and the original chip after at the temperature of 1180 ℃～1240 ℃, ungrease treatment being completed is carried out 2 hours burning till.Obtain thus the ceramic post sintering cell cube.
In ensuing the 7th operation, at first the ceramic post sintering cell cube obtained in above-mentioned the 6th operation is carried out to tumbling grinding and vitreous coating.Afterwards, under air atmosphere, with about 700 ° of C, the ceramic post sintering cell cube after applying is heat-treated.Thus, form glassy layer on the ceramic post sintering cell cube, then, the ceramic post sintering cell cube is carried out to secondary oxidation.
In ensuing the 8th operation, utilize sputtering method, with the order of Cr, NiCu, Ag, on the left and right both ends of the surface of the ceramic post sintering cell cube after secondary oxidation, form outer electrode 41,42.Finally, by electroplating, at first externally on the surface of electrode 41,42, form the first filming 51,52 of Sn.
By above eight procedures, thermistor 1 is accomplished.
In thermistor 1 after completing, come in the following manner t1, t2, w1, w2 are measured, check.At first, along the direction of vertical with the L axle (namely, parallel with the WT face),, grind completing product once or the end of negative direction one side from the positive direction of L axle.Till this grinding lasts till that all internal electrodes 3 expose from abradant surface.Abradant surface while exposing becomes state as shown in Figure 3.Afterwards, utilize digital microscope to measure t1, t2, w1, w2.
More specifically, measure in the following manner t1, t2.On the interarea S11 that at first, will expose from abradant surface, W axle positive direction side point, W direction of principal axis mid point and W axle negative direction side point be made as measuring point.T direction of principal axis distance till from each measuring point to joint face S3 is measured, and these mean values of measuring distance are made as to t1.On the interarea S22 that will expose equally,, W axle positive direction side point, W direction of principal axis mid point and W axle negative direction side point be made as measuring point.T direction of principal axis distance till from each measuring point to joint face S4 is measured, and these mean values of measuring distance are made as to t2.In present embodiment, as the T gap of thermistor 1, for example select less in t1, t2 one.Wherein, in present embodiment, t1, t2 are identical in fact values, so between them, only can produce the difference of error degree (in other words, tolerance degree).
Measure in the following manner w1, w2.At first, joint face S15, S25 from exposing are measured to the distance of the W direction of principal axis till joint face S5, and the mean value of these measuring distances is made as to w1.Equally, will to the distance of the W direction of principal axis till joint face S6, the mean value that calculates, be made as w2 according to joint face S16, S26 from exposing.As the W gap of thermistor 1, for example select less in w1, w2 one.Wherein, w1, w2 are identical in fact values, between them, only can produce the difference of tolerance degree.
In addition, in present embodiment, be illustrated selecting a less value that is used as the T gap of thermistor 1 in t1, t2.But, be not limited to this, also can select larger in t1, t2 one.For the W gap, be also the same.In addition, also can utilize above-mentioned other method in addition to determine t1, t2, w1, w2.
" effect of thermistor "
For the effect (that is, heat dissipation characteristics) of clear and definite above-mentioned thermistor 1, the present inventor has made the assess sample No.1 of the various combination in 16 kinds of T gaps and W gap～No.16.As in following table 1 and table 2, putting down in writing, the common ground of each assess sample is to possess two internal electrodes 31,32, and possesses auxiliary electrode 71,72.
About assess sample No.1, as in following table 1, putting down in writing, the interelectrode distance of internal electrode 31,32 is 40[μ m], the T gap is 230[μ m], the W gap is 105[μ m], T/W is 2.190.Here, T/W is T gap/W gap.Other assess sample No.2～No.16, as record in table 1, table 2, omits record here.
As shown in Figure 4, each sample for example is arranged on substrate 8(, FR4(Flame Retardant Type 4: flame retardant type 4)) upper, and the coefficient of heat transfer with regulation.Here, utilize two kinds of methods respectively assess sample No.1～No.16 to be installed on substrate 8.The first installation method is called as the contact of LW face in the present embodiment.When carrying out this LW face contact, as shown in Figure 5A, mounting means is as follows: the interarea S22 of internal electrode 32 is roughly parallel to the installed surface 81 of substrate 8, and is roughly the T gap with the distance of installed surface 81.On the other hand, the second installation method is called as the contact of LT face in the present embodiment.As shown in Figure 5 B, mounting means is as follows: joint face S16, the S26 of internal electrode 31,32 are roughly parallel to the installed surface 81 of substrate 8 in this LT face contact, and are roughly the W gap with the distance of installed surface 81.
Here, as shown in table 1 and table 2, the R25 of assess sample No.1～No.16 ℃ [Ω] may not be consistent.Yet, in order to confirm heat dissipation characteristics, need to make the power consumption of each assess sample roughly unified.Therefore, between the outer electrode 41,42 of each assess sample No.1～No.16, apply voltage respectively, making its output power separately is 0.5[W] (with reference to table 1 and table 2).Now, the most of heat produced in each assess sample is conducted to substrate 8 from duplexer 2, and thus, the heat produced in each assess sample is released.
The temperature of the fillet part 9 of each assess sample when the present inventor utilizes moisture recorder 10 to measure heat radiation.The temperature of the fillet part 9 while more specifically, assess sample No.1～No.16 being measured respectively to LW face when contact and the contact of LT face.Here, the fillet temperature when the LW face is contacted is called Tt[℃], the fillet temperature when the LT face is contacted is called Tw[℃].
In addition, as shown in the formula (1), define like that temperature difference Δ T[%].
ΔT=(Tmax/Tmin-1)×100…(1)
In formula, Tmax is larger one of Tt, Tw intermediate value.Tmin is less one of Tt, Tw intermediate value.During this is measured, the assess sample using above-mentioned Δ T in 10% scope, namely generate heat the temperature difference less and with internal electrode 3 with respect to installed surface 81 towards irrelevant sample as good example.This measurement result is as shown in following table 1 and table 2.
[table 1]
[table 2]
As shown in above-mentioned table 1 and table 2, as can be known: for assess sample No.2～4,6,7,10,11,13～15, Δ T narrows down to below 10%, and the heating temperature difference between when LT face when contact contacts with the LW face is less.In addition, if draw as shown in Figure 6 assess sample No.2～4,6,7,10,11,13～15 T gap and W gap, as can be known, if T/W(is namely, the slope of straight line) in the scope below 2.00 more than 0.60, Δ T will be converged in 10% so less scope.As described above, in this thermistor 1, t1, t2 are identical in fact and w1, w2 are identical in fact, in this case, by T/W is set in above-mentioned number range, thereby can reduce the heating temperature difference, and with internal electrode 3 with respect to installed surface 81 towards irrelevant.
" execution mode 2 "
Then, the related thermistor 1a of embodiments of the present invention 2 is described.About the basic structure beyond the design item, thermistor 1a compares with thermistor 1, and except the design item, its difference is size.In addition, between two kinds of thermistors 1,1a, there is no difference.Therefore, in the following description, quote Fig. 1～Fig. 5 B.In addition, in thermistor 1a, to the structure mark identical label suitable with thermistor 1, and omission illustrates one by one to it.
In thermistor 1a, duplexer 2 has the size that is equivalent to 2012 types.In this case, L direction of principal axis length is approximately 2.0[mm], W direction of principal axis width is approximately 1.2[mm].T direction of principal axis thickness can be selected arbitrarily, for example selects 0.9[mm].
In thermistor 1a, the L direction of principal axis length of each internal electrode 31,32 is for example 1780[μ m].W direction of principal axis width is at 40[μ m] above 1160[μ m] below.In addition, selecting rightly suitable value to be used as T direction of principal axis thickness, is for example 0.5[μ m]～2.0[μ m].
In addition, internally the interarea S11 of electrode 31 to the T clearance t 1 till joint face S3 at 20[μ m] more than, 430[μ m] below.This number range is in the situation that duplexer 2 is 2.0[mm] * 1.2[mm] * 0.9[mm], lower limit and the higher limit that can make.This point is applicable to t2 too.In addition, the W gap w1 till from joint face S15 to joint face S5, the 2nd W gap w2 till from joint face S16 to joint face S6 are all at 20[μ m] more than, 580[μ m] below.This number range is to be 2.0[mm at duplexer 2] * 1.2[mm] * 0.9[mm] and the width of internal electrode 3 in the situation that 40[μ m] more than, 1160[μ m] below, lower limit and the higher limit that can make.
In addition, the interarea S22 of electrode 32 is identical with the situation of the first clearance t 1 to the 2nd T clearance t 2 till joint face S4 internally, at 20[μ m] more than, 430[μ m] below.
" example of thermistor manufacture method "
The manufacture method of this thermistor 1a is compared with the manufacture method of above-mentioned thermistor 1, and difference is as described below.In addition, between the manufacture method of two kinds of thermistors 1,1a, there is no difference.Therefore, below can reduce the explanation to the common part of two kinds of manufacture methods.
In the 4th operation, print, make the W direction of principal axis width of the pattern that should become internal electrode 3 at 40[μ m] more than, 1160[μ m] below scope in, and T direction of principal axis thickness is at 0.5[μ m] more than, 2.0[μ M] below scope in.
In the 5th operation, to the ceramic green sheet with electrode pattern with do not have the ceramic green sheet of electrode pattern to carry out stacked, make t1, t2 after burning till be included in 20[μ m] above, 430[μ m] in following scope, and be roughly identical value, and the T direction of principal axis thickness after burning till is about 0.9[mm].In addition, the sheet material after stacked is cut into to ceramic original chip, burn till afterwards.Here, ceramic original chip is cut, makes w1, w2 be included in 20[μ m] above, 580[μ m] in following scope, and be roughly identical value, and L direction of principal axis length is roughly 2.0[mm], W direction of principal axis width is roughly 1.2[mm].
" effect of thermistor "
For the heat dissipation characteristics of clear and definite above-mentioned thermistor 1a, the present inventor has made the assess sample No.17 of the various combination in 16 kinds of T gaps and W gap～No.32.The present inventor utilizes mensuration system shown in Figure 4 to measure fillet temperature T t, Tw and Δ T, usings heat dissipation characteristics as these assess sample.About each assess sample No.17～No.32, detailed specification and measurement result are as shown in table 3 and table 4.The reference method of table 3 and table 4 and table 1, table 2 are identical, therefore reduce its detailed description.
[table 3]
[table 4]
As shown in above-mentioned table 3 and table 4, for assess sample No.18～20,22,23,26,27,29～31, T/W is in the scope more than 0.60, below 2.00, and Δ T is converged in 10% scope.As mentioned above, according to this thermistor 1a, even in the situation that size is different from thermistor 1 or W direction of principal axis width is different with T direction of principal axis thickness, by T/W being set in suitable number range, thereby can reduce the heating temperature difference, and with internal electrode 3 with respect to installed surface 81 towards irrelevant.
" execution mode 3 "
Then, the related thermistor 1b of execution mode 3 is described.About the basic structure of design beyond item, thermistor 1b compares with 1005 type thermistors 1, and difference is, t1, t2 are chosen in the value in the scope that meets t1/t2≤2.0.In addition, there is no difference between two kinds of thermistors 1,1b, therefore, in the following description, quote Fig. 1～Fig. 5 B.In addition, in thermistor 1b, the identical label of structure mark to suitable with thermistor 1, do not illustrate one by one to it.
" effect of thermistor "
For the heat dissipation characteristics of clear and definite thermistor 1b, the present inventor has made the assess sample No.33 that three kinds of t1/t2 are different～No.35.For assess sample No.33～35, the interelectrode distance of its internal electrode 31,32 is 50[μ m], the W gap is 160[μ m] (with reference to following table 5).In addition, in assess sample No.33, t1 is that 310, t2 is 140.In this case, t1/t2 is 2.214.The t1/W gap is that 1.938, t2/W gap is 0.875.Other assess sample No.34,35, as in table 5, putting down in writing, thereby do not illustrate it one by one, and T/W separately is in the scope more than 0.60, below 2.00 of definition in execution mode 1.
For each assess sample No.33～35, the fillet temperature T t2 the when present inventor utilizes the mensuration system of Fig. 4 to contact the fillet temperature T t1 in (with reference to Fig. 5 A), while making the t1 side near installed surface 81 and make the t2 side near installed surface 81 the LW face measures.In addition, after this, calculate the temperature difference Tt[% shown in following formula (2)].
ΔTt=(Ttmax/Ttmin-1×100…(2)
In formula, Ttmax is larger one of Tt1, Tt2 intermediate value.Ttmin is less one of Tt1, Tt2 intermediate value.During this is measured, by the assess sample of above-mentioned Δ Tt in 10% scope be judged as the heating temperature difference less and with internal electrode 3 with respect to installed surface 81 towards irrelevant thermistor.
Said determination result and result of calculation are as shown in table 5 below.
[table 5]
As above shown in table 5, as can be known: for assess sample No.34,35, Δ Tt narrows down to below 10%, thereby the heating temperature difference of existing two kinds of LW faces contact is less.Thus, according to this thermistor 1b, in 1005 types, even t1, t2 are not identical, but as long as t1/t2≤2.0, just can reduce the heating temperature difference by T/W is set in above-mentioned number range, and with internal electrode 3 with respect to installed surface 81 towards haveing nothing to do.
" execution mode 4 "
Then, the related thermistor 1c of execution mode 4 is described.About the basic structure of design beyond item, thermistor 1c compares with 2012 type thermistor 1a, and difference is, t1, t2 are chosen in the value in the scope that meets t1/t2≤2.0.In addition, there is no difference between two kinds of thermistor 1a, 1c, therefore, in the following description, quote Fig. 1～Fig. 5 B.In addition, in thermistor 1c, the identical label of structure mark to suitable with thermistor 1a, do not illustrate one by one to it.
" effect of thermistor "
For the heat dissipation characteristics of clear and definite thermistor 1c, the present inventor has made the assess sample No.36 that three kinds of t1/t2 are different～No.38.For assess sample No.36～38, the interelectrode distance of its internal electrode 31,32 is 150[μ m], and the W gap is 300[μ m] (with reference to following table 6).In addition, in assess sample No.36, t1 is that 510, t2 is 240.In this case, t1/t2 is 2.125.The t1/W gap is that 1.700, t2/W gap is 0.800.Other assess sample No.37,38, as in table 6, putting down in writing, thereby does not illustrate it one by one, but its T/W separately all is in the scope more than 0.60, below 2.00 of definition in execution mode 1.
For each assess sample No.36～38, the fillet temperature T t2 the when present inventor utilizes the mensuration system of Fig. 4 to contact the fillet temperature T t1 in (with reference to Fig. 5 A), while making the t1 side near installed surface 81 and make the t2 side near installed surface 81 the LW face measures.In addition, after this, calculate the temperature difference Tt[% shown in following formula (2)].Said determination result and result of calculation are as shown in table 6 below.
[table 6]
As above shown in table 6, as can be known: for assess sample No.37,38, Δ Tt narrows down to below 10%, thereby the heating temperature difference of existing two kinds of LW faces contact is less.Thus, according to this thermistor 1c, in 2012 types, even t1, t2 are not identical, as long as but meet t1/t2≤2.0, just can reduce the heating temperature difference by T/W is set in above-mentioned number range, and with internal electrode 3 with respect to installed surface 81 towards irrelevant.
" execution mode 5 "
Then, the related thermistor 1d of execution mode 5 is described.About the basic structure of design beyond item, thermistor 1d compares with 1005 type thermistors 1, and difference is, w1, w2 are chosen in the value in the scope that meets w1/w2≤2.0.In addition, there is no difference between two kinds of thermistors 1,1d, therefore, in the following description, quote Fig. 1～Fig. 5 B.In addition, in thermistor 1d, the identical label of structure mark to suitable with thermistor 1, do not illustrate one by one to it.
" effect of thermistor "
For the heat dissipation characteristics of clear and definite thermistor 1d, the present inventor has made the assess sample No.39 that three kinds of w1/w2 are different～No.41.For assess sample No.39～41, the interelectrode distance of its internal electrode 31,32 is 60[μ m], the T gap is 220[μ m] (with reference to following table 7).In addition, in assess sample No.39, w1 is that 310, w2 is 140.In this case, w1/w2 is 2.214.In addition, T gap/w1 is that 0.710, T gap/w2 is 1.571.Other assess sample No.40,41 specification, as in table 7, putting down in writing, thereby do not illustrate it one by one, but its T/W separately all is in the scope more than 0.60, below 0.00 of definition in execution mode 1.
For above-mentioned each assess sample No.39～41, the fillet temperature T w2 the when present inventor utilizes the mensuration system of Fig. 4 to contact the fillet temperature T w1 in (with reference to Fig. 5 B), while making the w1 side near installed surface 81 and make the w2 side near installed surface 81 the LT face measures.In addition, after this, calculate the temperature difference Tw[% shown in following formula (3)].
ΔTw=(Twmax/Twmin-1)×100…(3)
In formula, Twmax is larger one of Tw1, Tw2 intermediate value.Twmin is less one of Tw1, Tw2 intermediate value.During this is measured, by the assess sample of above-mentioned Δ Tw in 10% scope be judged as the heating temperature difference less and with internal electrode 3 with respect to installed surface 81 towards irrelevant thermistor.
Said determination result and result of calculation are as shown in table 7 below.
[table 7]
As above shown in table 7, as can be known: for assess sample No.40,41, Δ Tw narrows down to below 10%, thereby the heating temperature difference the during contact of existing two kinds of LT faces is less.Thus, according to this thermistor 1d, in 1005 types, as long as w1 and w2 meet w1/w2≤2.0, even their differences also can reduce the heating temperature difference by T/W is set in above-mentioned number range, and with internal electrode 3 with respect to installed surface 81 towards irrelevant.
" execution mode 6 "
Then, the related thermistor 1e of execution mode 6 is described.About the basic structure of design beyond item, thermistor 1e compares with 2012 type thermistor 1a, and difference is, w1, w2 are chosen in the value in the scope that meets w1/w2≤2.0.In addition, there is no difference between two kinds of thermistor 1a, 1e, therefore, in the following description, quote Fig. 1～Fig. 5 B.In addition, in thermistor 1e, the identical label of structure mark to suitable with thermistor 1a, do not illustrate one by one to it.
" effect of thermistor "
For the heat dissipation characteristics of clear and definite thermistor 1e, the present inventor has made the assess sample No.42 that three kinds of w1/w2 are different～No.44.For assess sample No.42～44, the interelectrode distance of its internal electrode 31,32 is 60[ν m], the T gap is 420[μ m] (with reference to following table 8).In addition, in assess sample No.42, w1 is that 510, w2 is 240.In this case, w1/w2 is 2.125.T gap/w1 is that 0.824, T gap/w2 is 1.750.Other assess sample No.43,44 specification, as in table 8, putting down in writing, thereby do not illustrate it one by one, but its T/W separately all is in the scope more than 0.60, below 2.00 of definition in execution mode 1.
For each assess sample No.42～44, the fillet temperature T w2 the when present inventor utilizes the mensuration system of Fig. 4 to contact the fillet temperature T w1 in (with reference to Fig. 5 B), while making the w1 side near installed surface 81 and make the w2 side near installed surface 81 the LT face measures.In addition, after this, calculate the temperature difference Tw[% shown in following formula (3)].Said determination result and result of calculation are as shown in table 8 below.
[table 8]
As above shown in table 8, as can be known: for assess sample No.43,44, Δ T narrows down to below 10%, thereby the heating temperature difference between during the contact of existing two kinds of LT faces is less.Thus, according to this thermistor 1e, even in the situation that 2012 types, as long as w1 and w2 meet w1/w2≤2.0, just can reduce the heating temperature difference by T/W is set in above-mentioned number range, and with internal electrode 3 with respect to installed surface 81 towards haveing nothing to do.
Industrial practicality
Thermistor involved in the present invention can reduce the heating temperature difference, and with internal electrode with respect to installed surface towards irrelevant, therefore be applicable to electronic equipment, be particularly useful for the overheated detection of miniaturized electronics etc.
Label declaration
1,1a～1e thermistor
2 duplexers
3 internal electrodes
31 first internal electrodes
32 second internal electrodes
41 first outer electrodes
42 second outer electrodes
7 auxiliary electrodes
Claims (3)
1. a stacked PTC thermistor, is characterized in that, comprising:
Duplexer, this duplexer is laminated with a plurality of potsherds in a first direction, and comprises: first and second end face relative on second direction, first and second joint face relative on this first direction, roughly with this first and the third direction of this second direction quadrature on relative the 3rd and the 4th joint face; And
At least two internal electrodes, these at least two internal electrodes are located at described duplexer inside in mode relative on described second direction, and comprise: near the first internal electrode of described the first joint face and the second internal electrode of close described the second joint face
To be made as t1 along the distance till on described first direction, from described the first internal electrode to described the first joint face, to be made as t2 along the distance till on described first direction, from described the second internal electrode to described the second joint face, and by t1 and t2 larger one be made as tmax, will be less one be made as tmin
To be made as w1 along the distance till on described third direction, from any one internal electrode to described the 3rd joint face, to be made as w2 along the distance till on described third direction, from any one internal electrode to described the 4th joint face, and by w1 and w2 larger one be made as wmax, will be less one be made as wmin
In this case, described t1, described t2, described w1, described w2 are the values that meets 0.60≤(t1 or t2)/(w1 or w2)≤2.00, tmax/tmin≤2.0 and wmax/wmin≤2.0.
2. stacked PTC thermistor as claimed in claim 1, is characterized in that, described first and the shape of described the second end face roughly be square.
3. stacked PTC thermistor as claimed in claim 1 or 2, is characterized in that, this stacked PTC thermistor is 1005 types.
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| CN2013203083577U CN203311954U (en) | 2013-05-30 | 2013-05-30 | Laminated PTC (positive temperature coefficient) thermistor |
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| CN2013203083577U CN203311954U (en) | 2013-05-30 | 2013-05-30 | Laminated PTC (positive temperature coefficient) thermistor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114072883A (en) * | 2019-03-22 | 2022-02-18 | 上海利韬电子有限公司 | PTC device including self-healing fuse |
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2013
- 2013-05-30 CN CN2013203083577U patent/CN203311954U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114072883A (en) * | 2019-03-22 | 2022-02-18 | 上海利韬电子有限公司 | PTC device including self-healing fuse |
| US11854723B2 (en) | 2019-03-22 | 2023-12-26 | Littelfuse Electronics (Shanghai) Co., Ltd. | PTC device including polyswitch |
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