CN203288593U - Antenna integrated graphene PIN junction terahertz detector - Google Patents
Antenna integrated graphene PIN junction terahertz detector Download PDFInfo
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- CN203288593U CN203288593U CN2013203060306U CN201320306030U CN203288593U CN 203288593 U CN203288593 U CN 203288593U CN 2013203060306 U CN2013203060306 U CN 2013203060306U CN 201320306030 U CN201320306030 U CN 201320306030U CN 203288593 U CN203288593 U CN 203288593U
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Abstract
The utility model discloses an antenna integrated graphene PIN junction terahertz detector and belongs to the field of a semiconductor device. The detector comprises a substrate, and a planar antenna and a grapheme PIN junction arranged on the substrate, wherein gaps are arranged between the planar antenna and the grapheme PIN junction, and a first ohmic contact electrode and a second ohmic contact electrode are arranged in the P area and the N area of the grapheme PIN junction. Compared to a conventional terahertz detector, the antenna integrated graphene PIN junction terahertz detector has the following advantages: the detection scope covers a whole terahertz frequency range, and the about picoseconds level response speed is quite fast; at the same time, the cost is low and the manufacture process is simple, therefore, the performance of the provided terahertz detector is substantially improved; at the same time, the provided terahertz detector can work normally at a room temperature, the defects of low temperature working requirements of the conventional detector is overcome, and the adaptability is enhanced; and since the planar antenna is integrated into the provided detector, the capability of detecting weak terahertz signals is improved.
Description
Technical field
The utility model belongs to field of semiconductor devices.
Background technology
Terahertz (THz) ripple refers to the electromagnetic wave of frequency in the 0.1-10THz scope, wherein 1THz=1000GHz.The THz ripple occupies very special position in electromagnetic spectrum, the THz technology is the very important intersection Disciplinary Frontiers that International Technology circle is generally acknowledged.
Terahertz Technology mainly contains terahertz detection and THz source technology.Because the Terahertz frequency is too high, common material lacks significant response to THz wave, causes the detection of THz wave comparatively difficult.At present, carry out a lot of researchs both at home and abroad and surveyed THz wave, widely usedly mainly contain following several detection means: the one, by frequency mixer, the Terahertz wave frequency is down to the IF-FRE that is easy to measure, have at present based on the Terahertz Schottky diode and based on the frequency mixer of insulation superconducting junction and pyroelectrics, frequency mixer based on Schottky diode needs complicated semiconductor technology to make, its detective bandwidth is limited, is generally tens GHz; Terahertz detector based on insulation superconducting junction and pyroelectrics, need low-temperature working, can not work under room temperature.The 2nd,, by optical instrument,, based on the electro optic effect of optical crystal, realize the detection to THz wave, this detection generally is applied to the pumping-detection synchro system, needs femtosecond laser to realize, and comparison in equipment is expensive.Three are based on the plasmon detector of semi-conducting material, for example based on the detector of GaN material, such detector is similar to photovoltaic effect, can realize the detection to THz wave,, because such detector noise equivalent power is higher at present, can't realize the passive detection to THz wave.Four are based on bolometer, generally detection system need to be down to low temperature, and the temperature of approximately several K needs the measurement of cooling device realization to THz wave.
At first Britain graceful Chester A.Geim seminar of university found Graphene (graphene) with stripping means in 2004.It is the another kind found after zero dimension fullerene, the one dimension carbon nano-tube monocrystalline functional material by the tightly packed one-tenth bi-dimensional cellular of monolayer carbon atom shape lattice structure.Although the discovery of Graphene is not in a few years, the special space structure that it has, significant quantum size effect have caused people's strong interest., due to the superelevation mobility of electronics under the zero band-gap energy band structure of Graphene uniqueness, room temperature, electronic property that the short round road transports, lower than characteristics such as the resistivity of copper and silver, high-termal conductivity, from transistor, chemical sensor, to nano-electromechanical device, prepare composite, very large application potential is arranged.Due to its unique optical absorption characteristics, the application of Graphene on photoelectric device realized by people gradually, and is considered to one of application direction of tool potentiality.
Because Graphene has zero band gap, it can absorb the THz wave that photon energy is several milli electron-volts.THz wave is when shining the Graphene interface, and electronics will absorb the energy of THz wave, realize transition, produces photo-generated carrier.
The utility model content
The technical problems to be solved in the utility model is to provide the integrated Graphene PIN knot of a kind of antenna terahertz detector, and the investigative range of this detector can cover whole Terahertz frequency range, and can improve the detectivity to weak terahertz signal.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is: the integrated Graphene PIN knot of a kind of antenna terahertz detector, comprise substrate, be located at flat plane antenna and Graphene PIN knot on substrate, be provided with space between described flat plane antenna and Graphene PIN knot; P district and N district at described Graphene PIN knot are provided with the first Ohm contact electrode and the second Ohm contact electrode.
Described flat plane antenna is divided into two parts and is located at the both sides of Graphene PIN knot.
Described substrate is SiC or Si.
Described the first Ohm contact electrode and the second Ohm contact electrode adopt metal material to make.
Described flat plane antenna is butterfly antenna or logarithm periodic antenna.
The technological progress of adopting technique scheme to obtain is:
Compare with the investigative range of existing terahertz detector tens GHz, the investigative range of the detector that the utility model is made can cover whole Terahertz frequency range, and fast response time, be about picosecond magnitude, simultaneously, the utility model detector is with low cost, and manufacture craft is simple, therefore, greatly improved the performance of terahertz detector; Simultaneously, this detector also can be in the just capable work of working and room temperature, and having overcome existing detector needs the defect of low-temperature working, has improved its adaptability; Due to detector integrated flat plane antenna, also improved the detectivity to weak terahertz signal.
Description of drawings
Fig. 1 is structural representation of the present utility model;
Wherein, the 1, first Ohm contact electrode, 2, the P district, 3, flat plane antenna, 4, substrate, 5, intrinsic region, the 6, second Ohm contact electrode, 7, the N district.
Embodiment
By as can be known shown in Figure 1, the integrated Graphene PIN knot of antenna terahertz detector, comprise substrate 4, be located at flat plane antenna 3 and the Graphene PIN knot on substrate 4 and be located at the Ohm contact electrode that Graphene PIN ties; Described Graphene PIN knot is positioned at the centre position of substrate 4, and described flat plane antenna 3 is divided into two parts and is located at the both sides of Graphene PIN knot, and is provided with space between flat plane antenna 3 and Graphene PIN knot; Described Ohm contact electrode comprises the first Ohm contact electrode 1 and the second Ohm contact electrode 6, and described the first Ohm contact electrode 1 and the second Ohm contact electrode 6 lay respectively in graphite PIN knot P district 2 and N district 7; Described substrate 4 is the semi-conducting materials such as SiC or Si, and described ohmic contact layer adopts the metallic gold material to make as gold, copper etc., and described flat plane antenna 3 is butterfly type antenna.
Operation principle of the present utility model is:
During work, the first Ohm contact electrode 1 connects the negative pole of power supply, and the second Ohm contact electrode 6 connects the positive pole of power supply, has formed like this electric field that is pointed to the first Ohm contact electrode 1 by the second Ohm contact electrode 6 in the intrinsic region 5 of Graphene, electronics is aggregated N district 7, and hole is aggregated P district 2.
When THz wave is radiated at the intrinsic region 5 of Graphene, the intrinsic Graphene absorbs the THz wave of incident, produce photo-generated carrier-light induced electron and photohole, photo-generated carrier is under the effect of extra electric field, light induced electron accelerated motion is to N district 7, photohole accelerated motion is to P district 2, so just in intrinsic region, 5 photoelectric current arranged., by the size of test light electric current, can obtain the power of the THz wave of incident.
In practical application, need detector to carry out the demarcation of responsiveness.By the power of known incident THz wave, test obtains the photoelectric current in intrinsic region 5, converts and obtains the responsiveness of detector.
In the utility model, flat plane antenna 3 and the position of Graphene PIN knot on substrate 4 can arrange voluntarily.The first Ohm contact electrode 1 and the second Ohm contact electrode 6 also fixing with P district 2 and 7 positions, N district, can random combine, as long as guarantee that P district 2 and N district 7 respectively are provided with Ohm contact electrode.The type of flat plane antenna 3 is also a lot, can also be for logarithm periodic antenna except butterfly antenna etc., can select suitable type according to the performance requirement of detector.
Compare with the investigative range of existing terahertz detector tens GHz, the investigative range of the detector that the utility model is made can cover whole Terahertz frequency range, and fast response time, be about picosecond magnitude, simultaneously, the noise power of the utility model detector is low, with low cost, and manufacture craft is simple, therefore, greatly improved the performance of terahertz detector; Simultaneously, this detector also can be in the just capable work of working and room temperature, and having overcome existing detector needs the defect of low-temperature working, has improved its adaptability; Due to detector integrated flat plane antenna 3, also improved the detectivity to weak terahertz signal.
Claims (5)
1. the integrated Graphene PIN knot of an antenna terahertz detector, is characterized in that comprising substrate (4), be located at flat plane antenna (3) and Graphene PIN knot on substrate (4), is provided with space between described flat plane antenna (3) and Graphene PIN knot; P district (2) and N district (7) at described Graphene PIN knot are provided with the first Ohm contact electrode (1) and the second Ohm contact electrode (6).
2. the integrated Graphene PIN knot of antenna according to claim 1 terahertz detector, is characterized in that described flat plane antenna (3) is divided into two parts and is located at the both sides of Graphene PIN knot.
3. the integrated Graphene PIN knot of antenna according to claim 1 and 2 terahertz detector, is characterized in that described substrate (4) is SiC or Si.
4. the integrated Graphene PIN knot of antenna according to claim 1 and 2 terahertz detector, is characterized in that described the first Ohm contact electrode (1) and the second Ohm contact electrode (6) adopt metal material to make.
5. the integrated Graphene PIN knot of antenna according to claim 1 and 2 terahertz detector, is characterized in that described flat plane antenna (3) is butterfly antenna or logarithm periodic antenna.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203060306U CN203288593U (en) | 2013-05-30 | 2013-05-30 | Antenna integrated graphene PIN junction terahertz detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203060306U CN203288593U (en) | 2013-05-30 | 2013-05-30 | Antenna integrated graphene PIN junction terahertz detector |
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| Publication Number | Publication Date |
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| CN203288593U true CN203288593U (en) | 2013-11-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2013203060306U Expired - Lifetime CN203288593U (en) | 2013-05-30 | 2013-05-30 | Antenna integrated graphene PIN junction terahertz detector |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715291A (en) * | 2013-12-30 | 2014-04-09 | 中国科学院上海微系统与信息技术研究所 | Terahertz photoelectric detector |
| CN109830547A (en) * | 2019-03-05 | 2019-05-31 | 金华伏安光电科技有限公司 | A kind of sub- terahertz wave detector with light-focusing function |
-
2013
- 2013-05-30 CN CN2013203060306U patent/CN203288593U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715291A (en) * | 2013-12-30 | 2014-04-09 | 中国科学院上海微系统与信息技术研究所 | Terahertz photoelectric detector |
| CN103715291B (en) * | 2013-12-30 | 2016-05-25 | 中国科学院上海微系统与信息技术研究所 | A kind of terahertz photoelectric detector |
| CN109830547A (en) * | 2019-03-05 | 2019-05-31 | 金华伏安光电科技有限公司 | A kind of sub- terahertz wave detector with light-focusing function |
| CN109830547B (en) * | 2019-03-05 | 2020-10-27 | 温州益蓉机械有限公司 | Sub-terahertz wave detector with light condensation function |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131113 |
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| CX01 | Expiry of patent term |