CN203276880U - Conductive film - Google Patents

Conductive film Download PDF

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Publication number
CN203276880U
CN203276880U CN 201320067212 CN201320067212U CN203276880U CN 203276880 U CN203276880 U CN 203276880U CN 201320067212 CN201320067212 CN 201320067212 CN 201320067212 U CN201320067212 U CN 201320067212U CN 203276880 U CN203276880 U CN 203276880U
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China
Prior art keywords
grid
conductive grid
insulating layer
transparent insulating
conducting film
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Expired - Fee Related
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CN 201320067212
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Chinese (zh)
Inventor
周菲
张晟
高育龙
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Nanchang OFilm Tech Co Ltd
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Nanchang OFilm Tech Co Ltd
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Abstract

A conductive film comprises a transparent insulating substrate and a conductive grid formed on the transparent insulating substrate. By the way of mold embossing, the surface of the transparent insulating substrate is embossed with a grid-like groove. The process is simple and quick, and high-efficient. A metal solution is filled in the groove, and sintered to form the conductive grid. The cost is low. The spacing of the grid lines of the conductive grid is d1, wherein 100[mu]m<=d1<600[mu]m. The conductive grid square resistance is R, wherein 0.1 omega/sq<= R<200 omega/sq. In order to reduce the spacing of the grid lines, the width of the grid lines must be decreased, therefore the transparent performance of the conductive film is improved. The smaller the square resistance is, the better the conductivity of the conductive film is and also the faster the electrical signal transmission is. Low metal content helps to ensure that the square resistance is small, and also the raw material is saved.

Description

Conducting film
Technical field
The present invention relates to the touch-screen field, particularly relate to a kind of conducting film.
Background technology
Touch-screen is widely used in various electronic installations with display screen as realizing the preferred mode of man-machine interactive operation, and the conducting film indispensable part that is it.
at present, conducting film comprises the transparent insulation substrate, conductive layer and conductive grid, transparent insulation substrate and conductive layer adjacency, described conductive grid is positioned at conductive layer surface, the usual way of making conducting film is the exposure imaging mode, mode by exposure imaging becomes conductive layer with the silver salt emulsion layer, and form the conductive grid pattern on its surface, and the cloth silver of conductive grid pattern is measured, the grid line spacing, the parameter of the surface parameters such as square resistance and electrically conductive microparticle is made change, spacing between the conductive grid grid line that obtains is 600 ~ 800 μ m, square resistance is 200 ~ 800 Ω/sq, the tenor of conductive grid is 1.3 ~ 1.9g/m ﹠lt, sup TranNum="65" ﹠gt, 2 ﹠lt, /sup ﹠gt,Be intended to improve the electric conductivity of conducting film.
But there are following technical problems that need to be resolved hurrily in existing conducting film: the grid line spacing causes greatly needs to use thicker grid line, and optical property is not good; Square resistance is larger, has reduced the transmission rate of the signal of telecommunication, is processed into the touch-screen afterreaction insensitive, and user's experience sense is poor.
Summary of the invention
Based on this, be necessary for existing conducting film optical property not goodly, square resistance is large, electric signal transmission speed slow, the insensitive problem of reaction provides a kind of conducting film.
A kind of conducting film comprises transparent insulation substrate and the conductive grid that is formed on described transparent insulation substrate, and the grid line spacing of described conductive grid is d 1, and 100 μ m≤d 1<600 μ m; The conductive grid square resistance is R and 0.1 Ω/sq≤R<200 Ω/sq.
In embodiment, also comprise the transparent insulating layer that is formed at described transparent insulation substrate one surface therein, described conductive grid embeds or imbeds and is arranged in transparent insulating layer.
In embodiment, also comprise the transparent insulating layer that is formed at described transparent insulation substrate one surface therein, described transparent insulating layer forms some staggered grooves, and described conductive grid is arranged at described groove.
In embodiment, described conductive grid is by gold, silver, copper, aluminium, zinc therein, in a kind of or conductive grid that alloy at least both is made.
Therein in embodiment, the material that forms described conductive grid is 0.7 ~ 1.8g/m for silver and silver content 2
In embodiment, the grid line spacing of described conductive grid is d therein 1, and 200 μ m≤d 1≤ 500 μ m.
In embodiment, the grid line spacing of described conductive grid is d therein 1, and 200 μ m≤d 1<350 μ m.
In embodiment, the grid line spacing of described conductive grid is d therein 1, and 350 μ m≤d 1≤ 500 μ m.
In embodiment, described conductive grid square resistance is R and 1 Ω/sq≤R≤60 Ω/sq therein.
In embodiment, the grid live width of described conductive grid is d therein 2, and 1 μ m≤d 2≤ 10 μ m.
In embodiment, the grid live width of described conductive grid is d therein 2, and 2 μ m≤d 2<5 μ m.
In embodiment, described conductive grid is the regular figure that is evenly arranged therein.
In embodiment, the thickness of described transparent insulating layer is d therein 4, recess width is d 3, and 0.5≤d 4/ d 3≤ 1.5.
In embodiment, the groove side of described transparent insulating layer is provided with and improves transparent insulating layer mechanical characteristic effect and prevent the abrasive protective layer of transparent insulating layer therein.
Above-mentioned conductive film for touch screen arranges latticed groove at the transparent insulation substrate surface, fills metallic solution and form conductive grid in groove; Spacing between grid line is d 1, and 100 μ m≤d 1<600 μ m, sheet resistance is R and 0.1 Ω/sq≤R<200 Ω/sq; Described sheet resistance is R and 0.1 Ω/sq≤R<200 Ω/sq, can in the situation that tenor certain to make the spacing between described grid line be d 1, and 100 μ m≤d 1<600 μ m.Reducing mesh spacing must reduce the grid line width, thereby improves the light transmission of conducting film; Sheet resistance is less, and the electric conductivity of conducting film is better, and the transmission speed of the signal of telecommunication is faster, and the deviation of sheet resistance reduces simultaneously.
Description of drawings
Fig. 1 is this conductive film structure schematic diagram;
Fig. 2 is this conducting film linear pattern conductive grid schematic diagram;
Fig. 3 is this conducting film wave line style conductive grid schematic diagram;
Fig. 4 imbeds the transparent insulating layer structural representation for this conducting film conductive grid;
Fig. 5 directly is arranged at transparent insulation substrat structure schematic diagram for this conducting film conductive grid;
Fig. 6 is this conducting film transparent insulation layer thickness and recess width structural representation;
Fig. 7 is the manufacturing flow chart of this conducting film.
Embodiment
For the ease of understanding the present invention, the below is described more fully the present invention with reference to relevant drawings.Provided first-selected embodiment of the present invention in accompanying drawing.But the present invention can realize in many different forms, is not limited to embodiment described herein.On the contrary, providing the purpose of these embodiment is to make to disclosure of the present invention more thoroughly comprehensively.
Unless otherwise defined, all technology of using of this paper and scientific terminology are with to belong to the implication that those skilled in the art of the present invention understand usually identical.The term that uses in specification of the present invention herein is not intended to be restriction the present invention just in order to describe the purpose of specific embodiment.Term as used herein " and/or " comprise one or more relevant Listed Items arbitrarily with all combinations.
" transparent " in the transparent insulation substrate can be regarded as " transparent " and " substantially transparent " in the present invention; " insulation " in the transparent insulation substrate can be regarded as " insulation " and " dielectric medium (dielectric) " in the present invention, so " transparent insulation substrate " in the present invention includes but not limited to transparent insulation substrate, substantially transparent dielectric substrate, transparent dielectric medium substrate and substantially transparent dielectric medium substrate.
As shown in Figure 1, a kind of conducting film comprises transparent insulation substrate 10 and the conductive grid 11 that is formed on described transparent insulation substrate 10.Described transparent insulation substrate 10 is the transparent insulation shape, and optical property is good, can not affect the light transmission of conducting film; Described conductive grid 11 has conductivity, has guaranteed the conduction Film conductivity; The assurance of light transmission and conductivity two large characteristics makes conducting film can be used for touch-screen.
Wherein, as shown in Figure 2 and Figure 3, the grid line spacing of described conductive grid 11 is d 1, and 100 μ m≤d 1<600 μ m; Conductive grid 11 square resistances are R and 0.1 Ω/sq≤R<200 Ω/sq.Reduce the grid line spacing d of conductive grid 11 1, make 100 μ m≤d 1<600 μ m need to use thinner grid line, reduce to form the grid line width d of grid 2, because conductive grid 11 is light tight, reduce grid line width d 2Can increase glazed area, the light transmission of conducting film improves.The square resistance of conducting film affects conductivity, and square resistance reduces to improve the electric conductivity of conductive film, and square resistance is less, and conductivity is better, and electric signal transmission speed is faster; Reduce conductive grid 11 square resistance R, make 0.1 Ω/sq≤R<200 Ω/sq, improved the conduction Film conductivity, electric signal transmission speed is fast.
The present embodiment conducting film transparent insulation substrate 10 used can be selected any one in the high grade of transparency materials such as poly terephthalic acid class plastics, plastic transparent material, Merlon or glass.
In the present embodiment, described conducting film also comprises the transparent insulating layer 12 that is formed at described transparent insulation substrate 10 1 surfaces, and described conductive grid 11 embeds or imbeds and is arranged at transparent insulating layer 12.Described transparent insulating layer 12 can be light binding, hot-setting adhesive or certainly do adhesive curing formation, be preferably without shadow glue (UV solidifies glue), optical cement or liquid optical cement (LOCA glue).Described light binding, hot-setting adhesive or certainly do the adhesive curing piece, condition of cure is low, intensity is high, does not need to spend more technique and cost can reach the curing purpose.Optical cement can be the OCA optical film, and UV solidifies glue, OCA optical film or liquid optical cement, and all the adhesive effect with waterglass, metal, plastics etc. is good; Adhesive strength is high, and transparency is good; After curing the internal stress cracking phenomena can not appear; Curing rate is fast, has greatly improved operating efficiency; Can put glue or wire mark applying glue, handled easily by automation.
Wherein, described transparent insulation substrate 10 1 surfaces can be by photoetching, the means such as impression form groove shape structure, can be at described groove shape body structure surface glue coating, solidify to form transparent insulating layer 12, fill described conductive grid 11 again in the groove shape structure that described transparent insulating layer 12 forms, conductive grid 11 is embedded be arranged at transparent insulating layer 12.Perhaps, as shown in Figure 4, in described transparent insulation substrate 10 1 surface formation groove shape structures, starch at the groove shape body structure surface blade coating silver that transparent insulation substrate 10 forms, so that silver slurry is filled described groove shape structure, sintering and solidify to form described conductive grid 11 then, then at transparent insulation substrate 10 and conductive grid 11 surface-coated glue, solidify to form transparent insulating layer 12, conductive grid 11 is imbedded be arranged at transparent insulating layer 12.
In embodiment, described conducting film also comprises the transparent insulating layer 12 that is formed at described transparent insulation substrate 10 1 surfaces therein, and described transparent insulating layer 12 forms some staggered grooves, and described conductive grid 11 is arranged in described groove.Transparent insulating layer 12 adhesive strengths are high, can be bonding with waterglass, metal, plastics etc., after bonding and transparent insulation substrate 10, form some staggered grooves on transparent insulating layer 12 surfaces by methods such as die marks, in the groove that transparent insulating layer 12 surface imprint form, conductive grid 11 is set again, simple to operate, efficient is high, and cost is low.
Perhaps, as shown in Figure 5, conductive grid 11 can also directly be formed at transparent insulation substrate 10 surfaces that groove is not set.
Described conductive grid 11 is by gold, silver, copper, aluminium, zinc, in a kind of or conductive grid 11 that alloy at least both is made.Above-mentioned material easily obtains, and cost is lower, Nano Silver particularly, and cost is low, conducts electricity very well.
In the present embodiment, the material that forms described conductive grid 11 is 0.7 ~ 1.8g/m for silver-colored and silver content 2Silver content is lower, can save raw material guaranteeing to reduce the consumption of silver on described conducting film light transmission and conductivity good or more excellent basis, reduces costs.
The grid line spacing d of described conductive grid 11 1Be preferably 200 μ m≤d 1≤ 500 μ m.Below 14 inches the time, preferably select 200 μ m≤d when the touch-screen size 1The grid line spacing range of<350 μ m; More than 14 inches the time, preferably select 350 μ m≤d when the touch-screen size 1The grid line spacing range of≤500 μ m.Grid line spacing d 1Be associated with the size of touch-screen, mainly from light transmission, conductivity and cost aspect consideration, under the prerequisite that satisfies corresponding light transmission and conductivity, reduce costs as much as possible.
Described conductive grid 11 square resistances are R and are preferably 1 Ω/sq≤R≤60 Ω/sq.Square resistance R in this scope, can significantly improve the conduction Film conductivity, significantly improve the transmission speed of the signal of telecommunication, and low than 0.1 Ω/sq≤R<200 Ω/sq to the requirement of precision, namely reduce technological requirement under the prerequisite that guarantees conductivity, reduced cost.
The grid live width of described conductive grid 11 is d 2, and 1 μ m≤d 2≤ 10 μ m.The live width of grid affects the light transmission of conducting film, and the grid live width is less, and light transmission is better.Needing the grid line spacing d of conductive grid 11 1Be 100 μ m≤d 1When<600 μ m, conductive grid 11 square resistance R are 0.1 Ω/sq≤R<200 Ω/sq, grid live width d 2Be 1 μ m≤d 2≤ 10 μ m can meet the demands, and can improve the light transmission of conducting film simultaneously.The grid live width d of conductive grid 11 particularly 2Be 2 μ m≤d 2During<5 μ m, the conducting film glazed area is larger, and light transmission is better, and required precision is relatively low.
In embodiment one, get d 1=200 μ m, R=4 ~ 5 Ω/sq, argentiferous measures 1.1g/m 2, grid live width d 2Get 500nm ~ 5um.Certainly, what of the value of sheet resistance R, silver content all can be subject to grid live width d 2With the impact of the depth of groove of filling, grid live width d 2Depth of groove larger, that fill is larger, and sheet resistance can increase thereupon to some extent, silver content also increases thereupon.
In embodiment two, get d 1=300 μ m, R=10 Ω/sq, argentiferous measures 0.9 ~ 1.0g/m 2, grid live width d 2Get 500nm ~ 5um.Certainly, what of the value of sheet resistance R, silver content all can be subject to grid live width d 2With the impact of the depth of groove of filling, grid live width d 2Depth of groove larger, that fill is larger, and sheet resistance can increase thereupon to some extent, silver content also increases thereupon.
In embodiment three, get d 1=500 μ m, R=30 ~ 40 Ω/sq, argentiferous measures 0.7g/m 2, grid live width d 2Get 500nm ~ 5um.Certainly, what of the value of sheet resistance R, silver content all can be subject to grid live width d 2With the impact of the depth of groove of filling, grid live width d 2Depth of groove larger, that fill is larger, and sheet resistance can increase thereupon to some extent, silver content also increases thereupon.
The regular figure of described conductive grid 11 for being evenly arranged.Conductive grid 11 is arranged evenly rule, grid line spacing d 1All equate, can make the conducting film printing opacity even on the one hand; On the other hand, the distribution of resistance on conductive grid 11 surfaces is even, and resistance deviation is little, need not the setting for the revisal resistance deviation, makes imaging even.Can be the straight line grid pattern of nearly orthogonal form, crooked wave grid pattern etc.
As shown in Figure 6, in the present embodiment, the thickness of described transparent insulating layer is d 4, recess width is d 3, and 0.5≤d 4/ d 3≤ 1.5.When transparent insulating layer 12 coatings and transparent insulation substrate 10 1 surfaces, and when transparent insulating layer 12 impressions form groove, because the degree of depth of described groove than recess width quite or slightly large will impress glue laminated and wears and expose transparent insulation substrate 10 in the time of can avoiding embossed grooves.Transparent insulating layer 12 thickness d 4With recess width d 3Ratio be 0.5≤d 4/ d 3≤ 1.5, both reached the requirement of transparent insulating layer 12 thickness, be conducive to again save material; d 4/ d 3Than less, seeing through of light is better; Simultaneously, also can be because of transparent insulating layer 12 thickness d 4Excessive, and be unfavorable for reducing the gross thickness of described conducting film, be conducive to reduce the thickness of touch-screen.
In the present embodiment, described conducting film also comprises the groove side that is arranged at transparent insulating layer 12, is used for improving transparent insulating layer 12 mechanical characteristic effects and preventing the abrasive protective layer of transparent insulating layer 12.Described protective layer can be to be formed by adhesives such as gelatin or high molecular polymers; groove side and thickness that protective layer fits in described transparent insulating layer 12 can be below 0.2 μ m; can prevent from abrading transparent insulating layer 12, also improve simultaneously the mechanical characteristic effect of transparent insulating layer 12.
In embodiment, described conducting film also can comprise electric conductive polymer layer or electrically conductive microparticle layer therein, and described electric conductive polymer layer or electrically conductive microparticle layer conductivity are low, high resistance and transparent, and conductivity is 1.0 * 10 7More than Ω/sq, can with described transparent insulating layer 12 adjoining positions, form high-resistance transparency conducting layer on conducting film, can make the deviation of conductive grid 11 square resistances even.
As shown in Figure 7, a kind of conducting film manufacture method, comprise the following steps: S110: die marks, on transparent insulation substrate 10 surfaces or transparent insulating layer 12 surface pressure print off latticed groove, described transparent insulation substrate 10 and transparent insulating layer 12 adjacency, and the grid line spacing of described mould is 100 μ m≤d 1<600 μ m; S120: solidify groove; S130: printing is filled, and metallic solution is filled in printing in described groove; S140: the described metallic solution of metallic solution sintering that sintering is filled, form conductive grid 11, making conductive grid 11 square resistances is 0.1 Ω/sq≤R<200 Ω/sq, tenor is 0.7 ~ 1.8g/m 2, to make conducting film.The mould that utilization makes impresses out corresponding groove on transparent insulation substrate 10, and groove is solidified, and forms the groove that intensity is high and shape is fixing, and the simple efficient of operation is high.Wherein, the grid line spacing of described mould is 100 μ m≤d 1It is 100 μ m≤d that<600 μ m, die marks can obtain spacing 1The groove of<600 μ m.By pouring metallic solution in the groove that forms at impression, and type metal solution, make its uniform filling in each groove; The metallic solution that sintering is filled makes the metal simple-substance in solution sinter the conduction fine rule into, and solvent volatilizees in sintering, and formed conductive grid 11 square resistances are 0.1 Ω/sq≤R<200 Ω/sq, and tenor is 0.7 ~ 1.8g/m 2Wherein, described metal material is selected from a kind of or alloy in gold, silver, copper, aluminium, zinc, and preferred silver, metallic solution are the silver slurry.
In embodiment, described S110 die marks specifically comprises the following steps: S1102 therein: embossed grooves, print off latticed groove in transparent insulation substrate 10 surface pressure; S1104: coating transparent insulating layer 12, glue coating is to form transparent insulating layer 12 in groove; Perhaps S1106: coating transparent insulating layer 12, at transparent insulation substrate 10 surface-coated glue to form transparent insulating layer 12; S1108: embossed grooves, print off latticed groove in transparent insulating layer 12 surface pressure.Described transparent insulating layer 12 has transparent characteristics, does not affect the light transmission of conducting film; The adhesive function that also has glue can not fit in described transparent insulation substrate 10 by other adhesives, has simplified technique and composition; Also have simultaneously the characteristics of the moulding of being easy to.On transparent insulation substrate 10, groove is set, then on groove glue coating, form transparent insulating layer 12, can reduce the gross thickness of transparent insulation substrate 10 and transparent insulating layer 12, also can save material.The certain thickness transparent insulating layer 12 of coating on transparent insulation substrate 10, utilize mould embossed grooves on transparent insulating layer 12, because transparent insulating layer 12 is easy to moulding, so die marks is simple, quick and cost is low, the higher groove of intensity can be formed after curing, and the light transmission of conducting film can be do not affected after filling the silver slurry.
Therein in embodiment, the spacing d between the grid line of the described conductive grid 11 of die marks 1Be 100 μ m≤d 1<600 μ m; The conductive grid 11 square resistance 0.1 Ω/sq≤R<200 Ω/sq of metallic solution printing; The tenor of conductive grid 11 is 0.7 ~ 1.8g/m 2
The grid of mould is made into spacing d between grid line 1Be 100 μ m≤d 1<600 μ m can impress out corresponding groove at the interface that needs form conductive grid 11, after filling metallic solution and sintering, obtain the grid line of corresponding spacing, by reducing to form the grid line width d of grid 2, lighttight grid line width d 2Reduce, the light transmission of conducting film improves; More intensive because of conductive grid 11 simultaneously, more clear by the writings and image imaging that touch-screen shows, observability is good.
Described metallic solution is preferably the silver slurry, makes solvent evaporates by sintering, sinters silver-colored simple substance into the conductive mesh ruling, and the tenor that makes conductive grid 11 is 0.7 ~ 1.8g/m 2, to reduce the square resistance on conductive grid 11 surfaces, simultaneously, save raw material.
By reducing to form the grid line width d of grid 2, reduce the tenor of conductive grid 11, described conductive grid 11 square resistances are 0.1 Ω/sq≤R<200 Ω/sq.The square resistance of conducting film affects conductivity, and square resistance reduces to improve the electric conductivity of conductive film, and square resistance is less, good conductivity, and electric signal transmission speed is fast; Conductive grid 11 square resistances are reduced to 0.1 Ω/sq≤R<200 Ω/sq, have improved the conduction Film conductivity, and electric signal transmission speed is fast.
Certainly, conductive grid 11 is at 100 μ m≤d 1The grid line spacing d of<600 μ m 10.1 the square resistance of Ω/sq≤R<200 Ω/sq; 0.7 ~ 1.8g/m 2Tenor between different values have different conductivity and light transmission, subtle difference is specifically arranged, the analog value in range of choice, can obtain different conducting films as required.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.Should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.

Claims (13)

1. a conducting film, is characterized in that, comprises transparent insulation substrate and the conductive grid that is formed on described transparent insulation substrate, and the grid line spacing of described conductive grid is d 1, and 100 μ m≤d 1<600 μ m; The conductive grid square resistance is R and 0.1 Ω/sq≤R<200 Ω/sq.
2. conducting film according to claim 1, is characterized in that, also comprises the transparent insulating layer that is formed at described transparent insulation substrate one surface, and described conductive grid embeds or imbeds and is arranged in transparent insulating layer.
3. conducting film according to claim 1, is characterized in that, also comprises the transparent insulating layer that is formed at described transparent insulation substrate one surface, and described transparent insulating layer forms some staggered grooves, and described conductive grid is arranged at described groove.
4. according to claim 1~3 described conducting films of any one, is characterized in that, described conductive grid is by gold, silver, copper, aluminium, zinc, in a kind of or conductive grid that alloy at least both is made.
5. conducting film according to claim 1, is characterized in that, the grid line spacing of described conductive grid is d 1, and 200 μ m≤d 1≤ 500 μ m.
6. conducting film according to claim 1, is characterized in that, the grid line spacing of described conductive grid is d 1, and 200 μ m≤d 1<350 μ m.
7. conducting film according to claim 1, is characterized in that, the grid line spacing of described conductive grid is d 1, and 350 μ m≤d 1≤ 500 μ m.
8. conducting film according to claim 1, is characterized in that, described conductive grid square resistance is R and 1 Ω/sq≤R≤60 Ω/sq.
9. according to claim 1~3 described conducting films of any one, is characterized in that, the grid live width of described conductive grid is d 2, and 1 μ m≤d 2≤ 10 μ m.
10. conducting film according to claim 9, is characterized in that, the grid live width of described conductive grid is d 2, and 2 μ m≤d 2<5 μ m.
11. according to claim 1~3 described conducting films of any one is characterized in that described conductive grid is the regular figure that is evenly arranged.
12. conducting film according to claim 3 is characterized in that, the thickness of described transparent insulating layer is d 4, recess width is d 3, and 0.5≤d 4/ d 3≤ 1.5.
13. conducting film according to claim 3 is characterized in that, the groove side of described transparent insulating layer is provided with and improves transparent insulating layer mechanical characteristic effect and prevent the abrasive protective layer of transparent insulating layer.
CN 201320067212 2013-02-05 2013-02-05 Conductive film Expired - Fee Related CN203276880U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456390A (en) * 2013-02-05 2013-12-18 南昌欧菲光科技有限公司 Conducting film and manufacturing method thereof
CN109360674A (en) * 2018-10-18 2019-02-19 吴江友鑫新材料科技有限公司 A kind of transparent conductive metal grid film and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456390A (en) * 2013-02-05 2013-12-18 南昌欧菲光科技有限公司 Conducting film and manufacturing method thereof
CN103456390B (en) * 2013-02-05 2016-04-27 南昌欧菲光科技有限公司 Conducting film and manufacture method thereof
CN109360674A (en) * 2018-10-18 2019-02-19 吴江友鑫新材料科技有限公司 A kind of transparent conductive metal grid film and preparation method thereof

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