CN203265578U - Equipment for continuously preparing high-purity single crystal copper - Google Patents

Equipment for continuously preparing high-purity single crystal copper Download PDF

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Publication number
CN203265578U
CN203265578U CN 201220674142 CN201220674142U CN203265578U CN 203265578 U CN203265578 U CN 203265578U CN 201220674142 CN201220674142 CN 201220674142 CN 201220674142 U CN201220674142 U CN 201220674142U CN 203265578 U CN203265578 U CN 203265578U
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China
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equipment
copper
single crystal
furnace
purity
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Expired - Fee Related
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CN 201220674142
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Chinese (zh)
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黄圆圆
付亚波
崔静
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Taizhou University
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Taizhou University
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Abstract

The utility model discloses equipment for continuously preparing high-purity single crystal copper and belongs to the technical field of new material preparation. The equipment for preparing the high-purity single crystal copper comprises an electron-beam melting furnace, horizontal continuous casting equipment, a liquid level control block, an insulation crystallizer, traction equipment and the like. A sheared 4N copper cathode plate is transported into the electron-beam melting furnace through a raw material transportation roll table and are melted and purified in a graphite boat; the purified copper melt directly flows into an insulation furnace of a horizontal continuous casting furnace through a diversion pipe; nitrogen gas as protective gas is introduced into the insulation furnace to prevent the oxidation; the copper melt passes through the insulation crystallizer and cooling equipment to form a single crystal copper drawing stock with a directional solidification tissue; and the drawing stock is drawn by the traction equipment to realize continuous production. According to the equipment and the method disclosed by the utility model, continuous preparation of the high-purity single crystal copper drawing stock can be realized; the equipment and the method have the advantages of low cost, no pollution, easiness for automatic control and the like; the prepared copper drawing stock has high purity and performances of single crystal; and the equipment is suitable for preparing materials such as bonding wires of IC (Integrated Circuit) packaging materials.

Description

The equipment of the high-purity single crystal Cu of a kind of continuous production
Technical field
The invention belongs to technical field of new material preparation, relate to the equipment of the high-purity single crystal Cu of a kind of continuous production.
Background technology
The contained impurity of high purity copper (purity that refers to copper is 5N-6N, i.e. 99.999%-99.9999%) is considerably less, thereby has good electric conductivity, thermal conductivity, ductility and good processing characteristics.
The characteristic of the existing high purity copper of high-purity single crystal Cu, the characteristic that has again single crystal Cu, various tie lines and the used for electronic packaging that can apply to endurance cable, high conductive cable and electric wire, flexible cable, electronics industry are good for zygonema, high-fidelity acoustics wire rod, ultra tiny enamel-covered wire, miniature coils, high frequency coil etc.Be used as the endurance cable as high-purity single crystal Cu, has the well performance of anti-repeatedly bend tension, can guarantee millwork people's normal operation, the service life that simultaneously can greatly improve robot, because industrial robot will be completed exercises, need to carry out a large amount of repeating motions, and transmit instruction, a large amount of cable transmission signal of control needs, the some of them cable will rotate along with the rotation of mechanical arm, and this just needs these cables that very high fatigue performance is arranged.Simultaneously, it also can be used as the transmission cable of miniature sniffing robot.
At present, the production of domestic many gold bonding silks and encapsulation enterprise begin to attempt carrying out the production of copper bonding wire one after another, the main preparation technology who adopts the preparation single crystal Cu, lattice as gloomy in Jiaozhuo, Changshu China one microelectronics, the long electricity in Jiangyin, day wawter bloom sky etc.Copper bonding wire quality or the quantity of producing at present all can not satisfy domestic market demand, and particularly the low ultra-fine bonding wire of radian, mainly depend on import, and its finished product is mainly from developed country's imports such as the U.S., Japan.
The enterprise of domestic production high purity copper such as Jinchuan Non-ferrous Metals Company can production purity 6N high purity coppers, because carry out die casting after adopting electronic beam vacuum smelting, can only produce shorter ingot casting again, can not produce continuously.And the companies such as Jiaozhuo Sen Ge adopt horizontal continuous casting technology produce single crystal copper cash, can produce continuously, but can not produce the above high purity copper wire rod of 5N.For this reason, the researcher both domestic and external preparation method and the equipment that begin one's study and to prepare continuously existing high-purity characteristic, high-purity single crystal copper wires of monocrystalline performance is arranged again.
Chinese patent " a kind of method for preparing ultrapure copper ", patent No. ZL 200810097398.X is that Chinese Jinchuan Non-ferrous Metals Company adopts nitric acid system electrolysis, electronic torch melting to combine and prepare the method for 6N high purity copper.Be characterized in take 6N electrolysis copper coin as raw material, obtain the high-purity copper ingot of 6N through electronic torch melting, satisfy the requirement of copper sputtering target material.Glow discharge spectrometry--GDMS analyzes 18 kinds of impurity elements in employing, adopts the decrement percentage composition to calculate the purity of high purity copper.The shortcoming of this technology is to realize continous way production.
Chinese patent " a kind of device and method for preparing high purity copper ", application number CN201010608453.4 is that Dalian University of Technology adopts the direct directional solidification of electronic torch melting to prepare the device and method of high purity copper.Be characterized in adopting that electronic torch melting and directional solidification are integrated, the electromagnetic purification technology, after repeatedly purifying, high-purity copper ingot of preparation can reach 6N.The shortcoming of this technology is to realize continous way production, is only suitable for adopting die casting to prepare high-purity copper ingot.
Japan Patent " manufacture method of high-purity copper, Unexamined Patent 4-365888 " and Japan Patent " manufacture method of high-purity copper, Unexamined Patent 6-173063 ", the method for employing electrolytic preparation 6N cathode copper.Its anode is cathode copper, and the cathode sheath diaphragm bag adopts the method for ion-exchange to remove impurity element in electrolyte, obtains the high pure electrolytic copper plate of 6N (99.9999%).
Calendar year 2001, in the Master's thesis that Gansu Polytechnical Univ's fourth ancestor richness is write " experimental study of the standby copper single crystal body of continuous casting of single crystal legal system ", be developed into voluntarily a horizontal continuous casting of single crystal equipment, the appearance that successfully produces diameter of phi 6mm, long 9-30m is the monocrystalline wire rod of minute surface; Grasp and progressively solved this technology in the operational key technology of equipment design and processes by engineer testing.
2008, the Master's thesis that Lanzhou University of Science ﹠ Technology's Cao Wen brightness is write " single crystal Cu prepares the performance study of bonding wire ", the performance that adopts single crystal Cu to prepare bonding wire is studied, produce at drawing ultra-fine bonding silk the finishing analysis that broken string carries out system by the single crystal Cu to the traditional handicraft preparation, the preparation technology who improves the single crystal Cu bar also tests its quality.Having studied the preparation wire diameter is the high-quality single crystal Cu bar of Φ 8mm microstructure change in orientation and performance variation law under different cold drawing states.It is the bonding wire of Φ 0.050mm that the high-quality single crystal Cu that adopts test to prepare has prepared wire diameter.
In present existing technology of preparing, Main Problems is: can adopt the method for discontinuous formula to prepare high purity copper, but can not prepare single crystal Cu; And when adopting continuation method to prepare single crystal Cu, can not prepare high purity copper.Therefore, the needs exploitation is a kind of can prepare high-purity method and apparatus that can prepare again the continous way of single crystal Cu.
Summary of the invention
The present invention is directed to the deficiency that exists in above-mentioned prior art, provide a kind of 4N copper cathode sheets take market sale as raw material, the processing technology of solidifying, draw through sealing charging, transportation, electronic torch melting, electron beam melting purification, horizontal orientation can continuous production has the method and apparatus of the copper blank of high-purity and monocrystalline performance.
The technical solution adopted in the present invention is:
With the 4N copper cathode sheets of selling on market, due to impurity and oxygen content higher, poor-performing need to be purified and is prepared into the tissue of monocrystalline.The 4N copper cathode sheets is cut into strip, through the position of roller transport to electron beam work, through electronic torch melting and two operations of electron beam purification, copper melts is by high purity graphite boat and mozzle, flow in holding furnace, be provided with temperature, liquid level automatic checkout equipment in holding furnace, can automatically control the temperature of melt and the height of liquid level.Through insulation crystallizer and cooling device, blank is solidified with oriented approach, form the blank with oriented freezing organization.Pulling equipment involves the blank that solidifies, and can realize continuously and steady production.This technology will prepare high pure metal and obtain single crystal organization to be combined, and develops a kind ofly can prepare high-purity Apparatus and method for that can prepare again the continous way of single crystal Cu.
The equipment that the present invention prepares high-purity single crystal Cu comprises that holding furnace, liquid level controll block, insulation crystallizer, cooling device, pulling equipment and the raw material conveyor roller of electron beam furnace, horizontal continuous casting furnace consist of.Raw material conveyor roller and electron beam furnace link together, graphite boat is housed in electron beam furnace, its holding furnace by mozzle and horizontal continuous casting furnace links together, and is provided with liquid level controll block in holding furnace, and the centre-height of insulation crystallizer, cooling device and pulling equipment is consistent.Have friction feeding, laser heating, quantity-produced characteristics, automaticity is higher.
The method of the high-purity single crystal Cu of manufacturing that the present invention relates to comprises the following steps:
Step 1: the 4N copper cathode sheets after shearing is transported into electron beam furnace by the raw material conveyor roller, is evacuated to 10 -2-10 -3During Pa, start electron gun bombardment copper billet, carry out melting and purification on graphite boat;
Step 2: the copper melts after purification flows directly into the holding furnace of horizontal continuous casting furnace by mozzle, pass into protective gas nitrogen in stove, anti-oxidation;
Step 3: copper melts forms the monocrystalline copper cash base with oriented freezing organization through insulation crystallizer and cooling device;
Step 4: the line base has been realized continuous production through the traction of pulling equipment;
Step 5: above-mentioned steps is combined to be realized serialization production, can obtain the copper cash base of endless, not only have high-purity but also have the performance of monocrystalline.
Advantage of the present invention is with electronic torch melting and purification, directional solidification are purified and horizontal casting is combined, the copper cash base of preparation has the low characteristics of high-purity, single crystal organization and oxygen content, the pollution to environment can be effectively avoided, low cost, endless and high efficient production can be realized.
Description of drawings
Fig. 1 is the equipment schematic diagram of the high-purity single crystal Cu of preparation.
In Fig. 1: 1 copper cash base; 2 pulling equipments; 3 cooling devices; 4 insulation crystallizer overcoats; 5 crystallizer heating jackets; 6 insulation crystallizers; The heating jacket of 7 horizontal stoves; The holding furnace of 8 horizontal stoves; 9 liquid level controll blocks; 10 electron beam furnaces; 11 feed(raw material)inlets; 12 raw material conveying tracks; 13 raw materials; 14 graphite boats; Liquation after 15 electron-beam meltings; 16 mozzles; The liquation of 17 holding furnaces
The specific embodiment
Describe specific embodiments of the invention in detail below in conjunction with technical scheme and accompanying drawing.
The equipment of the high-purity single crystal Cu of continuous production, this equipment comprises holding furnace 8, liquid level controll block, insulation crystallizer 6, cooling device 3, pulling equipment 2 and the raw material conveyor roller 12 of electron beam furnace 10, horizontal continuous casting furnace, raw material conveyor roller 12 links together with electron beam furnace 10, graphite boat 14 is housed in electron beam furnace 10, it links together by the holding furnace 8 of mozzle 16 with horizontal continuous casting furnace, be provided with liquid level controll block in holding furnace, the centre-height of insulation crystallizer 6, cooling device 3 and pulling equipment 2 is consistent.
Embodiment 1
4N copper cathode sheets 13 adds acetone soln with ultrasonic wave and cleans, then rinse post-drying with deionized water through after shearing; Copper billet is transported to electron beam furnace 10 by feed(raw material)inlet 11 by raw material conveying track 12, and raw material carries out melting and purification on graphite boat 14, forms copper melts 15, and temperature is 1200 ℃; Copper melts flows into mozzle 16 under the effect of 2 degree inclination component, enter the holding furnace 8 of horizontal continuous casting furnace, forms the melt 17 of holding furnace, and the steady temperature of holding furnace is provided in photothermal mode by heating jacket 7; Under the regulating action of liquid level controll block 9, guarantee that liquid level and crystallizer height are more than 300mm; Melt enters insulation crystallizer 6 under the static pressure effect; 4 energisings of insulation crystallizer overcoat, heating jacket 5 is made by graphite, makes melt temperature constant in 1100 ℃ of left and right by radiation; Cooling device 3 startings make the blank directional solidification, form oriented freezing organization; Pulling equipment 2 startings, the blank 1 that will solidify involves, and realizes producing continuously high line monocrystalline copper cash base.Higher front 22 kinds of impurity elements of content by analysis, the purity of decrement percentage composition is 5N to 6N.
Embodiment 2
4N copper cathode sheets 13 adds acetone soln with ultrasonic wave and cleans, then rinse post-drying with deionized water through after shearing; Copper billet is transported to electron beam furnace 10 by feed(raw material)inlet 11 by raw material conveying track 12, and raw material carries out melting and purification on graphite boat 14, forms copper melts 15, and temperature is 1250 ℃; Copper melts flows into mozzle 16 under the effect of 3 degree inclination component, enter the holding furnace 8 of horizontal continuous casting furnace, forms the melt 17 of holding furnace, and the steady temperature of holding furnace is provided in photothermal mode by heating jacket 7; Under the regulating action of liquid level controll block 9, guarantee that liquid level and crystallizer height are more than 300mm; Melt enters insulation crystallizer 6 under the static pressure effect; 4 energisings of insulation crystallizer overcoat, heating jacket 5 is made by graphite, makes melt temperature constant in 1150 ℃ of left and right by radiation; Cooling device 3 startings make the blank directional solidification, form oriented freezing organization; Pulling equipment 2 startings, the blank 1 that will solidify involves, and realizes producing continuously high line monocrystalline copper cash base.Higher front 22 kinds of impurity elements of content by analysis, the purity of decrement percentage composition is 5N to 6N.

Claims (2)

1. the equipment of the high-purity single crystal Cu of continuous production, this equipment comprises holding furnace, liquid level controll block, insulation crystallizer, cooling device, pulling equipment and the raw material conveyor roller of electron beam furnace, horizontal continuous casting furnace, raw material conveyor roller and electron beam furnace link together, graphite boat is housed in electron beam furnace, its holding furnace by mozzle and horizontal continuous casting furnace links together, be provided with liquid level controll block in holding furnace, the centre-height of insulation crystallizer, cooling device and pulling equipment is consistent.
2. equipment according to claim 1, be further characterized in that, raw material conveyor roller and electron beam furnace link together, and closes the feed(raw material)inlet during not charging.
CN 201220674142 2012-12-10 2012-12-10 Equipment for continuously preparing high-purity single crystal copper Expired - Fee Related CN203265578U (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104190891A (en) * 2014-09-10 2014-12-10 西安工业大学 Device for manufacturing small-diameter metal single-crystal wire
CN106460225A (en) * 2014-04-03 2017-02-22 釜山大学校产学协力团 Method for manufacturing single-crystalline metal ultrafine wire
CN107622899A (en) * 2017-10-11 2018-01-23 陕西斯瑞新材料股份有限公司 A kind of copper chromium composite contact mass production Preparation equipment and method
CN113930625A (en) * 2021-11-11 2022-01-14 东莞市单晶电子科技有限公司 Multilayer centrifugal high-purity single crystal copper reduction furnace and smelting method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106460225A (en) * 2014-04-03 2017-02-22 釜山大学校产学协力团 Method for manufacturing single-crystalline metal ultrafine wire
CN106460225B (en) * 2014-04-03 2019-06-04 釜山大学校产学协力团 The manufacturing method of single crystals metal ultrafine wire
CN104190891A (en) * 2014-09-10 2014-12-10 西安工业大学 Device for manufacturing small-diameter metal single-crystal wire
CN104190891B (en) * 2014-09-10 2016-04-06 西安工业大学 Prepare the device of minor diameter metal single crystal wire rod
CN107622899A (en) * 2017-10-11 2018-01-23 陕西斯瑞新材料股份有限公司 A kind of copper chromium composite contact mass production Preparation equipment and method
CN113930625A (en) * 2021-11-11 2022-01-14 东莞市单晶电子科技有限公司 Multilayer centrifugal high-purity single crystal copper reduction furnace and smelting method

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20131106

Termination date: 20141210

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