CN203260571U - Semiconductor package structure and leadframe strip without outer lead - Google Patents
Semiconductor package structure and leadframe strip without outer lead Download PDFInfo
- Publication number
- CN203260571U CN203260571U CN2012207367130U CN201220736713U CN203260571U CN 203260571 U CN203260571 U CN 203260571U CN 2012207367130 U CN2012207367130 U CN 2012207367130U CN 201220736713 U CN201220736713 U CN 201220736713U CN 203260571 U CN203260571 U CN 203260571U
- Authority
- CN
- China
- Prior art keywords
- several
- chip
- against corrosion
- semiconductor packaging
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The utility model discloses a semiconductor package structure and a leadframe strip without an outer lead. The semiconductor package structure without an outer lead comprises a leadframe unit, a chip, a plurality of electrical connection components, and a packaging adhesive material. The leadframe unit comprises a plurality of junctions and a corrosion resistant preplating metal layer which covers on an inner surface of the junctions. The chip is fixed in an area of the leadframe unit. The plurality of electrical connection components are used to electrically connect the chip with the corrosion resistant preplating metal layer on the junctions. The packaging adhesive material coats on the chip, the electrical connection components, and the corrosion resistant preplating metal layer, thereby forming the semiconductor package structure without an outer lead, wherein an outer surface of each junction and at least an etching sunken side surface are exposed out of the packaging adhesive material, and the outer surfaces of the junctions and the etching sunken side surfaces are covered with a soldering tin layer.
Description
Technical field
The utility model relates to a kind of non-exterior pin semiconductor packaging construction and conductive wire frame strip, particularly reaches the non-exterior pin semiconductor packaging construction of being made by described conductive wire frame strip relevant for an a kind of conductive wire frame strip with a preplating metal level against corrosion.
Background technology
Now, the semiconductor packages industry is in order to satisfy the demand of various high-density packages, develop gradually the packaging structure of various different types, and these packaging structures are normally selected lead frame (leadframe) or the next support plate (carrier) as carries chips of base plate for packaging (substrate), wherein the packaging structure of common use lead frame for example is little external form packaging structure (small outline package, SOP), quad flat package structure (quad flat package, QFP), square flat outer-pin-free packaging structure (quad flat no-lead package, QFN) or little profile non-exterior pin semiconductor packaging construction (small outline no-lead, SON) etc.
On the manufacturing process of general existing square flat outer-pin-free packaging structure (QFN) or little profile non-exterior pin semiconductor packaging construction (SON), wherein a non-exterior pin semiconductor packaging construction mainly comprises a conductive wire frame strip, a chip, several wires and a packing colloid that is formed by a metallic plate.On manufacturing process, at first prepare a metallic plate, it is the metal plate of a smooth and undressed mistake, then, first surface to described metallic plate carries out etching partially (half-etching) operation the first time, thereby form the default protruding island configuration of extended legs in a chip bearing and several, wherein said in several extended legs with single organize or many prescriptions formula be arranged around described chip bearing around.After etching partially operation for the first time, second surface to described metallic plate carries out etching partially (half-etching) operation the second time, thereby make the protruding island configuration of described chip bearing and described interior extended leg separated from one another, thereby form the conductive wire frame strip (leadframe strip) of a square flat outer-pin-free type or little profile without the conductive wire frame strip of outer pin-type, wherein the bottom correspondence of extended leg etches an outer contact in each, and the adjacent interior extended leg of each two adjacent lead frame temporarily links together with Cutting Road connection moulding simultaneously.
After finishing secondary and etching partially operation, described chip is fixed on the described chip bearing, and utilizes described several wires or several projections to carry out the routing operation, described in several on extended leg so that several connection pads on the described chip are electrically connected to respectively.After the routing operation; other utilizes described packing colloid to carry out the sealing operation; protect the first surface side of described chip, described several wires or several projections and described metallic plate, described packing colloid will expose the described outer contact (and chip bearing) of standing shape with embedding.
After the sealing operation, utilize cutting tool to excise at least most described Cutting Road and connect moulding, so make each two adjacent packaging structure separated from one another, to finish the manufacture process of several non-exterior pin semiconductor packaging constructions, the lower surface of wherein said packing colloid exposes the lower surface of described outer contact, and it can be as input/output terminal.In addition, a fraction of interior extended leg is understood corresponding described outer contact and is exposed on each side surface of described packing colloid.
In above-mentioned non-exterior pin semiconductor packaging construction (square flat outer-pin-free packaging structure or little profile non-exterior pin semiconductor packaging construction), when excision forming, because cutting tool and metal friction, and then the generation burr (bur) that extend, contact and then can cause bridge joint phenomenon between the interior extension pin if the burr of adjacent leads are unexpected, and for anti-here phenomenon occurs, must reduce cutting speed, but also therefore cause cutting efficiency to reduce; Moreover the consume of cutting tool is also accelerated in the friction between cutting tool and the metal base easily.
So, be necessary to provide a kind of non-exterior pin semiconductor packaging construction and conductive wire frame strip, to solve the existing problem of prior art.
The utility model content
In view of this, the utility model provides a kind of non-exterior pin semiconductor packaging construction and conductive wire frame strip, the problem that is produced to solve existing expensive pre-plating layer and the cutting process of prior art.
Main purpose of the present utility model is to provide a kind of non-exterior pin semiconductor packaging construction and conductive wire frame strip, it can avoid cutting tool and metal excessive friction, and then produce to extend and cause bridge joint phenomenon between the interior extension pin, can also make cutting tool avoid damaging excessively easily because rubbing, and then improve cutting efficiency.
Secondary objective of the present utility model is to provide a kind of non-exterior pin semiconductor packaging construction and conductive wire frame strip, and it can be by the pre-plating layer of plating single face, to reduce the cost of pre-plating layer.
For reaching aforementioned purpose of the present utility model, the utility model one embodiment provides a kind of conductive wire frame strip of non-exterior pin semiconductor packaging construction, and wherein said conductive wire frame strip comprises a housing, several connection brackets, several lead frame unit and a preplating metal level against corrosion.Described several connection brackets are staggered in the scope of described housing.Described several lead frame unit are arranged in the space of described connection bracket definition, and each described lead frame unit comprises several contacts.Described several contacts are connected on the described connection bracket.Described pre-metal cladding against corrosion covers an inner surface of described contact and described connection bracket.
In addition, the utility model another embodiment provide a kind of non-exterior pin semiconductor packaging construction, and wherein said non-exterior pin semiconductor packaging construction comprises a lead frame unit, a chip, several electric connection element and packaging adhesive materials.Described lead frame unit comprises several contacts and a preplating metal level against corrosion.Described pre-metal cladding against corrosion covers an inner surface of described contact.Described chip is fixed in the zone of described lead frame unit.Described several are electrically connected elements and are electrically connected the against corrosion pre-metal cladding of described chip to the described contact.Described packaging adhesive material coats described chip, described electric connection element and described pre-metal cladding against corrosion, to consist of a non-exterior pin semiconductor packaging construction, an outer surface and at least one etching notched side of exposed each the described contact of wherein said packaging adhesive material.Be coated with in addition a soldering-tin layer on the outer surface of wherein said contact and the etching notched side.
Compared with prior art, non-exterior pin semiconductor packaging construction of the present utility model and conductive wire frame strip, so not only can avoid cutting tool and metal excessive friction, and then produce to extend and cause bridge joint phenomenon between the interior extension pin, can also make cutting tool avoid damaging excessively easily because rubbing, and then improve cutting efficiency; Moreover, can also be by the pre-plating layer of plating single face, to reduce the cost of pre-plating layer.
For foregoing of the present utility model can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Description of drawings
Fig. 1 is the upper parallax stereogram of the conductive wire frame strip of the utility model one embodiment non-exterior pin semiconductor packaging construction.
Fig. 2 is the side cutaway view of the conductive wire frame strip of the utility model one embodiment non-exterior pin semiconductor packaging construction.
Fig. 3 is the side cutaway view of the utility model one embodiment non-exterior pin semiconductor packaging construction.
Fig. 4 A-4F is the step of the manufacture method of the utility model one embodiment non-exterior pin semiconductor packaging construction.
Embodiment
Below the explanation of each embodiment be with reference to additional graphic, can be in order to the specific embodiment of implementing in order to illustration the utility model.Moreover, the direction term that the utility model is mentioned, such as upper and lower, top, the end, front, rear, left and right, inside and outside, side, on every side, central authorities, level, laterally, vertically, vertically, axially, radially, the superiors or orlop etc., only be the direction with reference to annexed drawings.Therefore, the direction term of use is in order to explanation and understands the utility model, but not in order to limit the utility model.
Please refer to Figure 1 and Figure 2, the conductive wire frame strip of the non-exterior pin semiconductor packaging construction of the utility model one embodiment is a strip plate body, system is made by copper, iron, aluminium, nickel or equivalent metal or alloy usually for it, and being processed to form following detail structure via etching partially (half-etching), punching press (punching) or other equivalent methods, wherein said conductive wire frame strip mainly comprises: a housing 10, several connection brackets 11, several lead frame unit 12 and a preplating metal level 13 against corrosion.Described several connection brackets 11 are crosswise, are staggered in the scope of described housing.Described several lead frame unit 12 are arranged in the space that described connection bracket 11 supports, separates and define, and each described lead frame unit 12 comprises several contacts 121.Described several contacts 121 are connected on the described connection bracket 11.Described pre-metal cladding 13 against corrosion covers an inner surface of described contact 121 and described connection bracket 11.Described lead frame unit 12 comprises a chip bearing 122 in addition, described several contacts 121 be arranged in described chip bearing 122 around, described pre-metal cladding 13 against corrosion also covers an inner surface of described chip bearing 122.
Described pre-metal cladding 13 against corrosion can be nickel/palladium/gold (Ni-Pd-Au) pre-plating layer, palladium/gold (Pd-Au) pre-plating layer or golden pre-plating layer.Described pre-metal cladding 13 against corrosion is except anti-etching purpose, and it can also improve the conjugation of described contact 121 and plain conductor (wire) and projection (bump).In existing manufacturing process, if the Jin Taihou that forms in the projection zone then has the phenomenon of ion migration (migration) to solder projection, cause surface engagement not good; Yet Nei Ruojin is excessively thin in the routing zone, and its metal wire joint capacity can reduce, and nickel then has the small part metal and migrates to gold, can cause the routing conjugation grade that problem is arranged.Again in existing manufacturing process, form the tin layer, still have the problem of ion migration, also can cause surface engagement power not good, so that cost of manufacture waste, so nickel/palladium/gold (Ni-Pd-Au) pre-plating layer is sequentially to plate nickel dam, palladium layer and gold layer on described contact 121, it can promote so that the thread tacking of described conductive wire frame strip is right.In addition, described pre-metal cladding 13 against corrosion can also improve the conjugation of described contact 121 and adhesive material.
Please refer to shown in Figure 3ly, the non-exterior pin semiconductor packaging construction of the utility model one embodiment mainly comprises: a lead frame unit 12, a chip 14, several are electrically connected elements 15, a packaging adhesive material 16.Described lead frame unit 12 comprises several contacts 121 and a preplating metal level 13 against corrosion.Described pre-metal cladding 13 against corrosion covers an inner surface of described contact 121.Described chip 14 is fixed in the zone of described lead frame unit 12, for example is fixed on the described chip bearing 122.Described several are electrically connected elements 15 and are electrically connected the against corrosion pre-metal cladding 13 of described chip 14 to the described contact 121.Described packaging adhesive material 16 coats described chip 14, described electric connection element 15 and described pre-metal cladding 13 against corrosion, to consist of a non-exterior pin semiconductor packaging construction, one outer surface and at least one etching notched side 1211 of wherein said packaging adhesive material 16 exposed each described contact 121, preferably, an outer surface and two etching notched sides 1211 of described packaging adhesive material 16 exposed each described contact 121; Be coated with in addition a soldering-tin layer 20 on the outer surface of wherein said contact 121 and the etching notched side.Described lead frame unit 12 comprises a chip bearing 122 in addition, described several contacts 121 be arranged in described chip bearing 122 around, described pre-metal cladding 13 against corrosion covers an inner surface of described chip bearing 122.Described pre-metal cladding 13 against corrosion is nickel/palladium/gold (Ni-Pd-Au) pre-plating layer, palladium/gold (Pd-Au) pre-plating layer or golden pre-plating layer.Described pre-metal cladding 13 against corrosion is except anti-etching purpose, and it can also raising and the conjugation of plain conductor and projection.
In the present embodiment, it can be wire that described several are electrically connected element 15, it can be selected from gold thread, copper cash, aluminum steel, plating palladium copper cash or other metal wire rods, the utility model is not limited, but described several also are electrically connected element 15 projection (bumps), and are arranged on the described contact 121 in the mode of flip-chip (flip chip, FC), projection is in order to replace wire, and described lead frame unit 12 may be omitted the chip bearing was set this moment; And described packaging adhesive material 16 for example is to be selected from epoxy resin model plastics (epoxy molding compound, EMC), the encapsulating material that its general reference is commonly used.
Described non-exterior pin semiconductor packaging construction utilizes the described pre-metal cladding 13 against corrosion of the plating inner surface of a conductive wire frame strip, and the one outer surface then is the plated solder layer, can utilize described pre-metal cladding 13 against corrosion to reach simultaneously to improve thread tacking right and owing to only have the inner surface of the described conductive wire frame strip of plating cost-effective effect.
The utility model will be in hereinafter utilizing Fig. 4 A to 4E to describe in detail one by one, the manufacture method of the utility model one embodiment non-exterior pin semiconductor packaging construction, and it mainly comprises the following step:
At first, please refer to shown in Figure 2ly, a conductive wire frame strip is provided, comprise a housing 10, several connection brackets 11, several lead frame unit 12 and a preplating metal level 13 against corrosion; Each described lead frame unit 12 has several contacts 121, and described pre-metal cladding 13 against corrosion covers an inner surface of described contact 121 and described connection bracket 12; Described lead frame unit 12 comprises a chip bearing 122 in addition, described several contacts 121 be arranged in described chip bearing 122 around, described pre-metal cladding 13 against corrosion covers an inner surface of described chip bearing 122.Described pre-metal cladding 13 against corrosion is nickel/palladium/gold (Ni-Pd-Au) pre-plating layer, palladium/gold (Pd-Au) pre-plating layer or golden pre-plating layer.Described pre-metal cladding 13 against corrosion is except anti-etching purpose, and it can also improve the conjugation of described contact 121 and plain conductor, projection and packaging adhesive material.
Then, please refer to shown in Fig. 4 A, a chip 14 is provided, and described chip 14 is fixed in the zone of described lead frame unit 12, for example be fixed on the described chip bearing 122; Afterwards, recycle several be electrically connected elements 15 (wire or projection are depicted as a plain conductor such as Fig. 4 A) be electrically connected as described in chip 14 with as described in against corrosion pre-metal cladding 13 on the contact 121.
Then, please refer to shown in Fig. 4 B, utilize a packaging adhesive material 16 to coat described chip 14, described electric connection element 15 and described pre-metal cladding 13 against corrosion, described packaging adhesive material 16 for example is to be selected from epoxy resin model plastics, the encapsulating material that its general reference is commonly used after this step, can carry out mark lettering (marking) technique in addition, the mark lettering is on described packaging adhesive material 16 (not illustrating), and the mark Printing process can pass through laser marking or printing ink lettering.
Afterwards, please refer to shown in Fig. 4 C, at an outer surface of described contact 121 primary antibodie etching mask M1 is set, expose described connection bracket 11, then, the described connection bracket 11 that the described anti-etching mask M1 of etching exposes; Wherein said anti-etching mask M1 can be selected from photoresist film (photoresist) or the reusable mechanical mask plate of application type or dry-film type.
Then, please refer to shown in Fig. 4 D, the result of the described connection bracket 11 of etching forms an etching bath 30, described pre-metal cladding 13 against corrosion is exposed in described etching bath naked 30, then, remove described anti-etching mask M1, because metal base has been removed in preformed described etching bath 30, so can reduce the afterwards wearing and tearing of cutting tool of this step and the efficient of promoting cutting technique.
Please refer to shown in Fig. 4 E, moreover, after this step, can re-plating one soldering-tin layer 20 in the outer surface of described contact 121 and the described contact 121 at least one etching notched side in the face of described etching bath 30, preferably, electroplate described soldering-tin layer 20 in the two etching notched sides that outer surface and the described contact 121 of described contact 121 are faced described etching bath 30.Described soldering-tin layer 20 for example is various existing Pb-free solder alloys.
At last, please refer to shown in Fig. 4 F, utilize a cutting tool 40 cleavages at against corrosion pre-metal cladding 13 and the packaging adhesive material 16 of described cutting groove 30, so make each two adjacent packaging structure separated from one another, to finish the manufacture process of several non-exterior pin semiconductor packaging constructions, as shown in Figure 3, the lower surface of wherein said packing colloid exposes the lower surface of described contact 121, and it can be as input/output terminal.In addition, in this step, because described connection bracket 11 removed by in advance etching, so also so that adopt machine cuts or laser cutting parameter cuts described pre-metal cladding 13 against corrosion and packaging adhesive material 16 becomes feasible.
Non-exterior pin semiconductor packaging construction of the present utility model and conductive wire frame strip are useful in any non-exterior pin semiconductor packaging construction, namely can be applicable to the semiconductor packaging structure that four limits have pin, square flat outer-pin-free packaging structure (quad flat no-lead package for example, QFN), can also be useful in the semiconductor packaging structure that both sides have pin, for example little profile non-exterior pin semiconductor packaging construction (small outline no-lead, SON), perhaps on one side, three limits have the non-exterior pin semiconductor packaging construction of pin.
As mentioned above, compared to existing non-exterior pin semiconductor packaging construction and conductive wire frame strip, non-exterior pin semiconductor packaging construction of the present utility model and conductive wire frame strip, not only can avoid cutting tool and metal excessive friction, and then produce to extend and cause bridge joint phenomenon between the interior extension pin, can also make cutting tool avoid damaging excessively easily because rubbing, and then improve cutting efficiency; Moreover, can also be by the pre-plating layer of plating single face, to reduce the cost of pre-plating layer.
The utility model is described by above-mentioned related embodiment, yet above-described embodiment is only for implementing example of the present utility model.Must be pointed out that published embodiment does not limit scope of the present utility model.On the contrary, being contained in the spirit of claims and modification and impartial setting of scope is included in the scope of the present utility model.
Claims (4)
1. the conductive wire frame strip of a non-exterior pin semiconductor packaging construction, it is characterized in that: described conductive wire frame strip comprises:
One housing;
Several connection brackets are staggered in the scope of described housing;
Several lead frame unit are arranged in the space of described connection bracket definition, and each described lead frame unit comprises:
Several contacts are connected on the described connection bracket; And
One preplating metal level against corrosion covers an inner surface of described contact and described connection bracket.
2. the conductive wire frame strip of non-exterior pin semiconductor packaging construction as claimed in claim 1, it is characterized in that: described lead frame unit comprises a chip bearing in addition, described several banks of contacts list in described chip bearing around, described pre-metal cladding against corrosion covers an inner surface of described chip bearing.
3. non-exterior pin semiconductor packaging construction, it is characterized in that: described non-exterior pin semiconductor packaging construction comprises:
One lead frame unit comprises: several contacts and a preplating metal level against corrosion cover an inner surface of described contact;
One chip is fixed in the zone of described lead frame unit;
Several are electrically connected element, are electrically connected the against corrosion pre-metal cladding of described chip to the described contact; And
One packaging adhesive material coats described chip, described electric connection element and described pre-metal cladding against corrosion, to consist of a non-exterior pin semiconductor packaging construction, an outer surface and at least one etching notched side of exposed each the described contact of wherein said packaging adhesive material;
Be coated with in addition a soldering-tin layer on the outer surface of wherein said contact and the etching notched side.
4. non-exterior pin semiconductor packaging construction as claimed in claim 3, it is characterized in that: described lead frame unit comprises a chip bearing in addition, described several banks of contacts list in described chip bearing around, described pre-metal cladding against corrosion covers an inner surface of described chip bearing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012207367130U CN203260571U (en) | 2012-12-28 | 2012-12-28 | Semiconductor package structure and leadframe strip without outer lead |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012207367130U CN203260571U (en) | 2012-12-28 | 2012-12-28 | Semiconductor package structure and leadframe strip without outer lead |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203260571U true CN203260571U (en) | 2013-10-30 |
Family
ID=49473114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012207367130U Expired - Lifetime CN203260571U (en) | 2012-12-28 | 2012-12-28 | Semiconductor package structure and leadframe strip without outer lead |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203260571U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103021892A (en) * | 2012-12-28 | 2013-04-03 | 日月光半导体（昆山）有限公司 | Leadless semiconductor package, method for manufacturing the same, and lead frame strip |
-
2012
- 2012-12-28 CN CN2012207367130U patent/CN203260571U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103021892A (en) * | 2012-12-28 | 2013-04-03 | 日月光半导体（昆山）有限公司 | Leadless semiconductor package, method for manufacturing the same, and lead frame strip |
| CN103021892B (en) * | 2012-12-28 | 2016-05-11 | 日月光半导体（昆山）有限公司 | Leadless semiconductor package, method for manufacturing the same, and lead frame strip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102054385B1 (en) | Resin-encapsulated semiconductor device and method of manufacturing the same | |
| US20070222040A1 (en) | Leadless semiconductor package with electroplated layer embedded in encapsulant and the method for manufacturing the same | |
| CN104916606B (en) | Semiconductor device and its manufacturing method | |
| CN107994004A (en) | Stacked die semiconductor package body | |
| CN101312177A (en) | Lead frame for semiconductor device | |
| CN102214631A (en) | Lead frame for semiconductor device | |
| JP5278037B2 (en) | Resin-sealed semiconductor device | |
| CN103021892B (en) | Leadless semiconductor package, method for manufacturing the same, and lead frame strip | |
| CN103972199A (en) | Wire bonding method and structure | |
| CN101958257B (en) | Packaging method of directly placing firstly-plated and later-etched module by double-sided graphic chip | |
| CN103021879B (en) | Leadless semiconductor package, method for manufacturing the same, and lead frame strip | |
| CN105845585A (en) | Chip packaging method and chip packaging structure | |
| CN106206326A (en) | The semiconductor device of method and correspondence for manufacturing surface-mount type semiconductor device | |
| CN203260571U (en) | Semiconductor package structure and leadframe strip without outer lead | |
| CN102044445B (en) | Method for manufacturing lead frame of no-lead semiconductor package (QFN) | |
| CN115995440A (en) | Semiconductor packaging structure and manufacturing method thereof | |
| CN105355567B (en) | Two-sided etching water droplet bump package structure and its process | |
| CN105206594B (en) | One side etches water droplet bump package structure and its process | |
| CN203134783U (en) | No-lead semiconductor package structure and lead frame strip | |
| CN103824820B (en) | Leadframe area array package technology | |
| CN103107145A (en) | Semiconductor package, prefabricated lead frame and manufacturing method thereof | |
| CN101459154B (en) | Conductive wire rack and encapsulation construction applying the conductive wire rack | |
| CN101685809A (en) | Semiconductor packaging component and conducting wire rack thereof | |
| CN104681449A (en) | Leadless semiconductor package with optical inspection feature | |
| KR102525683B1 (en) | Clip structure and semiconductor package comprising the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 215341 No. 497, Huangpujiang South Road, Qiandeng Town, Kunshan City, Suzhou City, Jiangsu Province Patentee after: Riyuexin semiconductor (Kunshan) Co.,Ltd. Address before: 215341 No. 373, Songnan Road, Qiandeng Town, Kunshan City, Suzhou City, Jiangsu Province Patentee before: ADVANCED SEMICONDUCTOR ENGINEERING (KUNSHAN) Ltd. |
|
| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131030 |
|
| CX01 | Expiry of patent term |