CN203229585U - Long-life monocrystal silicon heater with uniform current field - Google Patents
Long-life monocrystal silicon heater with uniform current field Download PDFInfo
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- CN203229585U CN203229585U CN 201320238260 CN201320238260U CN203229585U CN 203229585 U CN203229585 U CN 203229585U CN 201320238260 CN201320238260 CN 201320238260 CN 201320238260 U CN201320238260 U CN 201320238260U CN 203229585 U CN203229585 U CN 203229585U
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Abstract
The utility model relates to a long-life monocrystal silicon heater with a uniform current field. The long-life monocrystal silicon heater with the uniform current field comprises a monocrystal silicon heating plate, a conductive plating, an electrode and a clamping plate, wherein the conductive plating is arranged between the monocrystal silicon heating plate and the electrode. The long-life monocrystal silicon heater with the uniform current field has high actual highest heating temperature, a large constant-temperature area and long service life, and is simple and convenient to implement and use. The conductive plating is arranged between the monocrystal silicon heating plate and the electrode, and the contact resistances between the conductive plating and the electrode and between the conductive plating and the monocrystal silicon heating plate are small and distributed uniformly, so that distribution uniformity of current on the monocrystal silicon heating plate is guaranteed, the actual highest heating temperature reaches 1,200 DEG C, the constant-temperature area is the whole monocrystal silicon heating plate, and the quality of a film, particularly the quality of a large-area film, is guaranteed. The monocrystal silicon heating plate is stressed uniformly, stable and unlikely to break, so that the service life of the monocrystal silicon heating plate is greatly prolonged, and silicon resources and energy are saved.
Description
Technical field
The utility model relates to silicon single crystal heater structure technology.Especially the silicon single crystal hot-plate in the silicon single crystal well heater and the interconnection technique of outer electrode.
Background technology
Pulsed laser deposition (PLD), sputtering method (sputtering) and method of evaporation are three kinds of the most frequently used methods that prepare film.Now not only can prepare high Tc superconducting film but also can prepare hundreds of films such as ferroelectric membranc, giant magnetoresistive thin film (LCMO film), optical thin film, superhard thin film with these three kinds of methods.Using when these three kinds of film-forming methods prepare film all needs substrate is heated.Early stage resistance heater, halogen lamp heater, the CO of adopting, 20 the end of the century silicon single crystal well heater begin to be applied, this be because the silicon single crystal well heater have simple in structure, constant temperature is regional relatively large, the highest usable temp height (theoretical maximum temperature is 1200 ℃) can bear advantages such as quenching formula rapid temperature rise and drop.But, present employed silicon single crystal heating unit all exists: the silicon single crystal hot-plate contacts bad this structural major defect with outer electrode, this current unevenness that causes distributing in the silicon single crystal hot-plate is spared, make well heater can't reach theoretical maximum temperature (the highest can only reach 960 ℃), and the flat-temperature zone of silicon single crystal well heater is difficult to be stabilized in the specific region, or even the flat-temperature zone reduces; Because local heating is uneven the silicon single crystal hot-plate is ruptured simultaneously, 900 ℃ of normal heating and cooling will be ruptured for average 40 times, and 900 ℃ of quenching formula rapid temperature rise and drops will rupture for average 3 times.
These shortcomings can influence the work-ing life of silicon single crystal well heater undoubtedly greatly, cause the significant wastage of silicon resource and the energy, can influence the quality of quality, the especially large area film of film simultaneously.
Summary of the invention
The purpose of this utility model is to propose the uniform long-life single crystal silicon of a kind of current field well heater, electric current in this silicon single crystal well heater on the silicon single crystal hot-plate is uniform and stable, the maximum heating temperature height, the constant temperature zone is the monoblock silicon chip, and has very long work-ing life.For realizing the purpose of this utility model, now pass through following technical proposal.
The uniform long-life single crystal silicon of a kind of current field well heater comprises silicon single crystal hot-plate, electroconductive coating, electrode and clamping plate, wherein establishes electroconductive coating between silicon single crystal hot-plate and the electrode.
The type of described silicon single crystal hot-plate can be p-type or n N-type semiconductorN silicon single crystal, can adopt line cutting technology to be processed into desired shape, is processed into the different structure shape according to different needs.
On the described silicon single crystal hot-plate chip bench is set, is used for placing substrate base.
The conductivity of described electroconductive coating is parity with or superiority over p-type or n type silicon single crystal hot-plate, select different electro-conductive materials for use according to different temperature requirements, it can be silvering, or gold plate, or molybdenum manganese composition metal coating, wherein the maximum operation (service) temperature of silvering is 961 ℃, and the maximum operation (service) temperature of gold plate is 1064 ℃, and molybdenum manganese composition metal coating maximum operation (service) temperature is 1580 ℃.
The plating process of described electroconductive coating can adopt hot dip or spraying plating or electroplate or evaporation or brush plating.
Described electrode is to be better than or the material that equals electroconductive coating is made by conductivity, select different electro-conductive materials for use according to different temperature requirements, it can be metal platinum, or metallic gold or argent, wherein the maximum operation (service) temperature of platinum is 1773 ℃, the maximum operation (service) temperature of gold is 1064 ℃, and the maximum operation (service) temperature of silver is 961 ℃.
Described electrode is connected with electroconductive coating on the silicon single crystal hot-plate, or connects, and wherein mode of connection can adopt contact, and bind mode can adopt welded type.
Described electroconductive coating, electrode and laminating structurally of silicon single crystal hot-plate two ends can be adopted packaging type, or the synusia formula.
Described clamping plate, the mode of being fixedly clamped can adopt slack adjuster to be fixedly clamped, or adopt the degree of tightness buckle to be fixedly clamped.
The utility model compared with prior art possesses following advantage and effect: the actual Heating temperature height of the utility model, big, the long service life in constant temperature zone, enforcement and easy to use.Owing between electrode and silicon single crystal hot-plate, be provided with electroconductive coating, contacting between electroconductive coating and the silicon single crystal hot-plate is the face contact, contact resistance between electroconductive coating and the electrode is very little simultaneously, therefore the contact resistance between electroconductive coating and electrode and the silicon single crystal hot-plate is very little and be evenly distributed, this has just created condition for the even distribution of electric current on the silicon single crystal hot-plate, and then guaranteed uniformity of temperature profile on the silicon single crystal hot-plate, thereby the actual maximum heating temperature that makes well heater can reach 1200 ℃, and realized that the constant temperature zone is monoblock silicon single crystal hot-plate, guaranteed the quality of film, especially the quality of large area film; Guaranteed that simultaneously the silicon single crystal hot-plate is heated evenly, and stablized, be difficult for breaking, thereby improved greatly the work-ing life of silicon single crystal well heater, saved silicon resource and the energy.
Description of drawings
Fig. 1 is the structural representation of the utility model integral body.
Fig. 2 is that the utility model is at the partial schematic diagram at electroconductive coating place.
Fig. 3 is the structural representation that the utility model laminates in electroconductive coating place synusia formula.
Among the figure: 1: lower plate, 2: electrode, 3: train wheel bridge, 4: electroconductive coating, 5: silicon single crystal hot-plate, 6: slack adjuster, 7: chip bench.
Embodiment
Below in conjunction with accompanying drawing the utility model is described.
As Fig. 1, novel silicon single crystal hot-plate 5, electroconductive coating 4, electrode 2, train wheel bridge 3, the lower plate 1 of comprising of this use wherein established electroconductive coating 4 between silicon single crystal hot-plate 5 and the electrode 2.Described train wheel bridge 3 and lower plate 1 are formed clamping plate, and clamping plate compress electrode 2, electroconductive coating 4 and silicon single crystal hot-plate 5 by slack adjuster 6.
Described electroconductive coating 4, electrode 2 can adopt with the frame mode that silicon single crystal hot-plate 5 two ends laminate: as shown in Figure 2, electroconductive coating 4 laminates silicon single crystal hot-plate 5 two ends with electrode 2 packaging types, or as shown in Figure 3, electroconductive coating 4 laminates silicon single crystal hot-plate 5 two ends with electrode 2 synusia formulas.
Can adopt parbuckle screw 6 to clamp between described train wheel bridge 3 and the lower plate 1, or adopt the degree of tightness buckle to clamp.
Embodiment 1: as Fig. 1, p-type or n type silicon single crystal are processed into the silicon single crystal hot-plate 5 of desired structure in elder generation during enforcement, secondly plate electroconductive coating 4 at the two ends of silicon single crystal hot-plate 5 receiving electrodes, then by slack adjuster 6(or degree of tightness buckle) use train wheel bridge 3 and lower plate 1 with electrode 2, electroconductive coating 4 and silicon single crystal hot-plate 5 laminate fixing, use at last is connected the other end of electrode 2 with power supply, wherein the mode of laminating can laminate or the synusia formula laminates with packaging type, owing to established electroconductive coating 4 at silicon single crystal hot-plate 5 two ends, make that contacting between electro-conductive material and the silicon single crystal hot-plate 5 on the electroconductive coating 4 is the face contact, and the contact resistance of electroconductive coating 4 and electrode 2 itself is just little, thereby reduced the contact resistance between electroconductive coating 4 and silicon single crystal hot-plate 5 and the electrode 2 greatly, guaranteed the homogeneity that electric current distributes at silicon single crystal hot-plate 5, and then guaranteed that maximum heating temperature of the present utility model can reach 1200 ℃, and the constant temperature zone is monoblock silicon single crystal hot-plate 5; Guaranteed that simultaneously silicon single crystal hot-plate 5 is heated evenly, be difficult for breaking, thereby improved greatly the work-ing life of silicon single crystal well heater, concrete work-ing life because of the difference of the difference of electrode 2 materials, electroconductive coating 4 materials, and Heating temperature different.
Wherein, when described electrode 2 is selected silver electrode for use, when described electroconductive coating 4 was selected silvering for use, with 900 ℃ of normal heating and cooling of speed of 1 ℃～10 ℃/min, the utility model can recycle more than 600 times continuously; With 900 ℃ of quenching formulas of speed rapid temperature rise and drop of 30 ℃～80 ℃/min, the utility model can recycle more than 100 times continuously; With 800 ℃ of normal heating and cooling of speed of 1 ℃～10 ℃/min, the utility model can recycle more than 1000 times continuously; With 800 ℃ of quenching formulas of speed rapid temperature rise and drop of 30 ℃～80 ℃/min, the utility model can recycle more than 200 times continuously.
When described electrode 2 is selected the metal platinum electrode for use, when described electroconductive coating 4 was selected molybdenum manganese composite deposite for use, with 1200 ℃ of normal heating and cooling of speed of 1 ℃～10 ℃/min, the utility model can recycle more than 150 times continuously; With 1200 ℃ of quenching formulas of speed rapid temperature rise and drop of 30 ℃～80 ℃/min, the utility model can recycle more than 30 times continuously; With 1100 ℃ of normal heating and cooling of speed of 1 ℃～10 ℃/min, the utility model can recycle more than 500 times continuously; With 1100 ℃ of quenching formulas of speed rapid temperature rise and drop of 30 ℃～80 ℃/min, the utility model can recycle more than 100 times continuously.
Embodiment 2: as Fig. 1, p-type or n type silicon single crystal are processed into the silicon single crystal hot-plate 5 of desired structure in elder generation during enforcement, electrocondution slurry is coated on the silicon single crystal hot-plate 5 then, secondly by clamping plate electrode 2 is fixedly clamped on the conductive coating at silicon single crystal hot-plate 5 two ends, put it into then and fire 10～30 minutes in the retort furnace, electrocondution slurry on the silicon single crystal hot-plate 5 sinters electroconductive coating 4 into, silicon single crystal hot-plate 5 and electrode 2 are welded together by electroconductive coating 4, described firing temperature is decided according to different electrocondution slurries, wherein the firing temperature of silver paste is 600～800 ℃, and atmosphere is air; The firing temperature of gold paste material is 700～800 ℃, and atmosphere is air; The firing temperature of molybdenum manganese slurry is 1100～1300 ℃, and atmosphere is reducing atmosphere, and use at last is connected the other end of electrode 2 with power supply.Because silicon single crystal hot-plate 5 two ends and electrode 2 weld together by electroconductive coating 4, this makes that the contact resistance between electroconductive coating 4 and silicon single crystal hot-plate 5 and the electrode 2 is very little and even, thereby guaranteed the homogeneity that electric current distributes at silicon single crystal hot-plate 5, and then guaranteed that maximum heating temperature of the present utility model can reach 1200 ℃, and the constant temperature zone is monoblock silicon single crystal hot-plate 5; Guaranteed that simultaneously silicon single crystal hot-plate 5 is heated evenly, be difficult for breaking, thereby improved greatly the work-ing life of silicon single crystal well heater.
Wherein, when described electrode 2 is selected silver electrode for use, when described electroconductive coating 4 was selected silvering for use, with 900 ℃ of normal heating and cooling of speed of 1 ℃～10 ℃/min, the utility model can recycle more than 600 times continuously; With 900 ℃ of quenching formulas of speed rapid temperature rise and drop of 30 ℃～80 ℃/min, the utility model can recycle more than 100 times continuously; With 800 ℃ of normal heating and cooling of speed of 1 ℃～10 ℃/min, the utility model can recycle more than 1000 times continuously; With 800 ℃ of quenching formulas of speed rapid temperature rise and drop of 30 ℃～80 ℃/min, the utility model can recycle more than 200 times continuously.
When described electrode 2 is selected the metal platinum electrode for use, when described electroconductive coating 4 was selected molybdenum manganese composite deposite for use, with 1200 ℃ of normal heating and cooling of speed of 1 ℃～10 ℃/min, the utility model can recycle more than 150 times continuously; With 1200 ℃ of quenching formulas of speed rapid temperature rise and drop of 30 ℃～80 ℃/min, the utility model can recycle more than 30 times continuously; With 1100 ℃ of normal heating and cooling of speed of 1 ℃～10 ℃/min, the utility model can recycle more than 500 times continuously; With 1100 ℃ of quenching formulas of speed rapid temperature rise and drop of 30 ℃～80 ℃/min, the utility model can recycle more than 100 times continuously.
When using the utility model, if the inequality of being heated occurs, well heater can be unloaded, take off clamping plate and electrode 2, grind off old electroconductive coating 4, plate electroconductive coating 4 then again, reach installing electrodes 2 and clamping plate and get final product; In addition, regularly polish off old electroconductive coating 4, plate new electroconductive coating 4, can be implemented on the above-mentioned basis that recycles the life-span continuously and further effectively prolong work-ing life of the present utility model.
Implement the utility model by the way, the maximum heating temperature that can realize the silicon single crystal well heater is 1200 ℃, and the constant temperature zone is monoblock silicon single crystal hot-plate 5, thereby has guaranteed the quality of quality, the especially large area film of film; Effectively prolong simultaneously the work-ing life of silicon single crystal well heater, saved silicon resource and the energy.
Claims (6)
1. the uniform long-life single crystal silicon of a current field well heater comprises silicon single crystal hot-plate (5), electroconductive coating (4), electrode (2) and clamping plate, it is characterized in that: establish electroconductive coating (4) between silicon single crystal hot-plate (5) and the electrode (2).
2. the uniform long-life single crystal silicon of current field well heater according to claim 1, it is characterized in that: the type of described silicon single crystal hot-plate (5) can be the p-type single crystal silicon semiconductor, or n N-type semiconductorN silicon single crystal.
3. the uniform long-life single crystal silicon of current field well heater according to claim 1, it is characterized in that: the electro-conductive material of described electroconductive coating (4) is the material that conductivity is parity with or superiority over silicon single crystal hot-plate (5), it can be silvering, or gold plate, or molybdenum manganese composition metal coating, wherein the maximum operation (service) temperature of silvering is 961 ℃, the maximum operation (service) temperature of gold plate is 1064 ℃, the maximum operation (service) temperature of molybdenum manganese composition metal coating is 1580 ℃, selects different electro-conductive materials for use according to different temperature requirements.
4. the uniform long-life single crystal silicon of current field well heater according to claim 1, it is characterized in that: described electrode (2) is to be better than or the material that equals electroconductive coating (4) is made by conductivity, it can be metal platinum, or metallic gold or argent, wherein the maximum operation (service) temperature of platinum is 1773 ℃, the maximum operation (service) temperature of gold is 1064 ℃, and the maximum operation (service) temperature of silver is 961 ℃, selects different electrode materialss for use according to different temperature requirements.
5. the uniform long-life single crystal silicon of current field well heater according to claim 1, it is characterized in that: described electrode (2) is connected with electroconductive coating (4) on the silicon single crystal hot-plate (5), or connect, wherein mode of connection can adopt contact, and bind mode can adopt welded type.
6. the uniform long-life single crystal silicon of current field well heater according to claim 1 is characterized in that: establish chip bench (7) on the described silicon single crystal hot-plate (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320238260 CN203229585U (en) | 2013-05-06 | 2013-05-06 | Long-life monocrystal silicon heater with uniform current field |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320238260 CN203229585U (en) | 2013-05-06 | 2013-05-06 | Long-life monocrystal silicon heater with uniform current field |
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| Publication Number | Publication Date |
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| CN203229585U true CN203229585U (en) | 2013-10-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320238260 Expired - Fee Related CN203229585U (en) | 2013-05-06 | 2013-05-06 | Long-life monocrystal silicon heater with uniform current field |
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| CN (1) | CN203229585U (en) |
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- 2013-05-06 CN CN 201320238260 patent/CN203229585U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131009 Termination date: 20160506 |
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| CF01 | Termination of patent right due to non-payment of annual fee |