CN203203778U - High power semiconductor laser light spot detection apparatus - Google Patents
High power semiconductor laser light spot detection apparatus Download PDFInfo
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- CN203203778U CN203203778U CN 201320159679 CN201320159679U CN203203778U CN 203203778 U CN203203778 U CN 203203778U CN 201320159679 CN201320159679 CN 201320159679 CN 201320159679 U CN201320159679 U CN 201320159679U CN 203203778 U CN203203778 U CN 203203778U
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- high power
- power semiconductor
- spot detection
- lens
- detection device
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Abstract
The utility model relates to a high power semiconductor laser light spot detection apparatus, comprising a lens body, a clamp and a heat dissipation base. The lens body is installed on the clamp; the clamp is installed on the heat dissipation base. The light spot detection apparatus can rapidly detect light spot quality of a C-mount packaged semiconductor laser, is convenient to use and easy to operate and is suitable for light spot quality detection of C-mount packaged semiconductor laser devices in batch production. The light spot detection apparatus has good detection effects on the light spot quality of a C-mount packaged semiconductor laser and possesses a fast detection speed; the lens can be changed timely in dependence on cases and be used in a more flexible and convenient way.
Description
Technical field
The utility model relates to a kind of spot detection device of high power semiconductor lasers, and especially the pick-up unit of the hot spot of the semiconductor laser of C-monut encapsulation belongs to field of semiconductor photoelectron technique.
Technical background
Semiconductor laser is as highly reliable light source, have low in energy consumption, in light weight, the life-span is long, volume is little, lower-price characteristic, is widely used in pumped solid-state laser, laser display technology, fields such as the medical treatment of light power, light of stage, laser lighting.For laser instrument itself comparatively strict evaluating standard is arranged in the above-mentioned numerous areas, after satisfying standard, just can reach request for utilization.
Yet semiconductor laser itself has apparent in view defective,, beam quality difference excessive such as the angle of divergence etc.Though emerging technologies such as optical shaping occurred, but because chip deviation may occur in the encapsulation assembling process, and manual influence in the optical processing process, in the far field of laser instrument, all can become the amplification of multiple, influence the optical characteristics of laser instrument itself, especially being applied to fields such as pumping, collimation, is the one of the main reasons that influences the semiconductor laser marketing.At the mass production semiconductor laser, how optical quality, the collimation of checking semiconductor laser instrument are important problems.
At present, the semiconductor laser of single tube encapsulation is based on the C-mount packing forms, because problems such as off-axis, light distribution are inhomogeneous, distortion that complete manual influence in the optical shaping process, the far-field spot of laser instrument may occur have a strong impact on the normal use of laser instrument.
Summary of the invention
The variety of issue that exists at the far-field spot of semiconductor laser, according to the characteristics of the semiconductor laser of existing C-mount encapsulation, the utility model provides a kind of spot detection device and spot detection method of high power semiconductor lasers.A kind of pick-up unit and the spot detection method that can judge the semiconductor laser remote field optical quality of C-mount encapsulation fast and accurately especially is provided.
The term explanation:
The C-mount encapsulation: be a kind of LD encapsulation mode, be called for short the C encapsulation, C encapsulated semiconductor laser instrument is the routine techniques of high-power LD, and the structural representation of C encapsulated semiconductor laser instrument as shown in Figure 6.The semiconductor laser size of existing C-mount encapsulation is generally determined, the heat sink rectangle that is generally, and the laser facula that sends is generally square.
The technical solution of the utility model is as follows:
A kind of spot detection device of high power semiconductor lasers, comprise anchor clamps and the lens body that is installed on the anchor clamps, lens body comprises the location cylinder of lower ending opening and is arranged on the lens of cylinder upper surface, location, on the vertical axis that is centered close to the location cylinder of lens; Anchor clamps comprise clamp base and the insulation spacer that is installed with fixed station, fixed station is the circular arc platform structure that has same radius with the location cylinder, the center of the center of lens and fixed station place circle is on the same axis, the upper surface of fixed station is installed with the positioning step positive electrode of holding concurrently, the positioning step positive electrode of holding concurrently is provided with the side of vertical direction, be installed with negative electrode on the insulation spacer, hold concurrently positive electrode and negative electrode of positioning step fixedlyed connected positive electrode lead-in wire and negative electrode by the lead-in wire fixed orifice respectively and gone between.Positive electrode is provided with the side of vertical direction because positioning step is held concurrently, the semiconductor laser of detected C-mount encapsulation leans against positioning step and holds concurrently on the side of positive electrode and guaranteed vertically deflection not of relative clamp base upper surface, thereby accurately be positioned on the anchor clamps, and make chip center's (being luminous point) of the semiconductor laser that C-mount encapsulates, the center of lens and the center of fixed station place circle be on the same axis.
According to the utility model, preferred, described lens are convex lens, and more preferably diameter is the convex lens of 1～3cm.
According to the utility model, preferred, the side of cylinder lower end, described location is provided with breach, is used for by positive electrode lead-in wire and negative electrode lead-in wire.
According to the utility model, preferred, the mode of fixedlying connected of described fixed station and clamp base is for being connected, and more preferably, fixed station is provided with fixed orifice, and fixed station and clamp base are fastenedly connected.
According to the utility model, preferred, the lower surface of described clamp base is provided with pilot pin, is used for the stationary fixture base, preferred 2 of the number of pilot pin.
According to the utility model, preferred, the spot detection device of described high power semiconductor lasers also comprises heat dissipation base, and heat dissipation base is provided with and the pilot pin corresponding positioning hole, and anchor clamps are fixedlyed connected with heat dissipation base with pilot hole by pilot pin.
The utility model lens can take off in good time replacing from lens body.
Fixed station of the present utility model, insulating mat pad, positioning step are held concurrently after positive electrode and negative electrode distributed areas altogether make that in the zone of location cylinder disc the location cylinder is installed, and fixed station, insulating mat pad, positioning step are held concurrently positive electrode and negative electrode all in locating cylinder.
The utility model, the preferred plastics of the material of lens body; The preferred aluminium of the material of heat dissipation base or oxygen-free copper have guaranteed good heat conduction.The insulating mat pad is used for preventing the spot detection device use short circuit of high power semiconductor lasers.
Because fixed station is the circular arc platform structure that has same radius with the location cylinder, has guaranteed that the location cylinder is installed on the anchor clamps fast and accurately; Because the upper surface of fixed station is installed with the positioning step positive electrode of holding concurrently, the semiconductor laser that has guaranteed the C-mount encapsulation can accurately be positioned on the anchor clamps, and makes chip center's (being the luminous point of laser instrument) of laser instrument, the center of fixed station place circle and the center of lens be on the same axis.
When using the utility model to carry out spot detection, the semiconductor laser of C-mount encapsulation heat sink abutted in positioning step holds concurrently on the side of positive electrode and the vertical deflection not of clamp base upper surface relatively, the screw of the semiconductor laser of C-mount encapsulation is aimed at the hold concurrently side of positive electrode of positioning step, thereby accurately be positioned on the anchor clamps, the transition electrode sheet of the semiconductor laser of C-mount encapsulation is connected with the negative electrode on the anchor clamps, chip center and the lens center of the semiconductor laser of C-mount encapsulation are on the same axis, after the energising, the semiconductor laser of C-mount encapsulation sends laser, pool the image of hot spot at lens, judge the collimation of the semiconductor laser chip assembling of C-mount encapsulation according to the picture quality of hot spot;
Be not square or do not drop on fully in the circular imaging region of lens that then the chip of the semiconductor laser of C-mount encapsulation is equipped with deflection if see through the hot spot of lens imaging, collimation is relatively poor; Be square or drop on fully in the circular imaging region of lens that then the chip of the semiconductor laser of C-mount encapsulation assembles no deflection if see through the hot spot of lens imaging, collimation is better.
The center of chip center's (being luminous point) of the semiconductor laser of the utility model C-mount encapsulation, fixed station place circle and the center of lens are on the same axis, deflection appears in the chip assembling of the semiconductor laser of C-mount encapsulation, the hot spot that sees through lens imaging is not square or do not drop in the circular imaging region of lens (such as a corner of hot spot the circular imaging region of lens outside) fully, can judge the collimation that the chip of the semiconductor laser of C-mount encapsulation assembles thus.
The beneficial effects of the utility model:
1, the utility model can be realized the fast detecting of the semiconductor laser optical quality of C-mount encapsulation, and is easy to use, simple to operate.The optical quality of the semiconductor laser that the C-mount that is fit to produce in batches encapsulates detects.
2, the utility model is fine to the detection effect of the semiconductor laser optical quality of C-mount encapsulation, and detection speed is fast, and lens can according to circumstances be changed in good time, use more flexible.
Description of drawings
Fig. 1 is the one-piece construction synoptic diagram of the utility model embodiment 2;
Fig. 2 is the structural representation of the utility model embodiment 2 lens body;
Fig. 3 is the structural representation of the utility model embodiment 2 anchor clamps;
Fig. 4 is the side view of the utility model embodiment 2 clamp structures;
Fig. 5 is the structural representation of the utility model embodiment 2 heat dissipation bases.
Fig. 6 is the structural representation of the semiconductor laser of C-mount encapsulation in the prior art.
Among the figure: 1, lens body, 2, anchor clamps, 3, heat dissipation base, 4, lens, 5, location cylinder, 6, clamp base, 7, fixed station, 8, fixed orifice, 9, the positioning step positive electrode of holding concurrently, 10, negative electrode, 11, the insulating mat pad, 12, positive electrode lead-in wire, 13, the negative electrode lead-in wire, 14, the lead-in wire fixed orifice, 15, pilot pin, 16, pilot hole, 17, the transition electrode sheet, 18, heat sink, 19, screw, 20, the chip of laser instrument.
Embodiment
Also by reference to the accompanying drawings the utility model is described further below by specific embodiment, but is not limited thereto.
A kind of spot detection device of high power semiconductor lasers, comprise anchor clamps 2 and the lens body 1 that is installed on the anchor clamps 2, lens body 1 comprises the location cylinder 5 of lower ending opening and is arranged on the lens 4 of cylinder 5 upper surfaces, location, on the vertical axis that is centered close to location cylinder 5 of lens 4; Anchor clamps 2 comprise clamp base 6 and the insulation spacer 11 that is installed with fixed station 7, fixed station 7 is the circular arc platform structure that has same radius with location cylinder 5, the center of the center of lens 4 and fixed station 7 places circle is on the same axis, the upper surface of fixed station 7 is installed with the positioning step positive electrode 9 of holding concurrently, the positioning step positive electrode 9 of holding concurrently is provided with the side of vertical direction, be installed with negative electrode 10 on the insulation spacer 11, hold concurrently positive electrode 9 and negative electrode 10 of positioning step fixedlyed connected positive electrode lead-in wire 12 and negative electrode lead-in wire 13 by lead-in wire fixed orifice 14 respectively.
A kind of spot detection device of high power semiconductor lasers, agent structure are with embodiment 1, and different is:
The side of cylinder 5 lower ends, described location is provided with breach, is used for by positive electrode lead-in wire 12 and negative electrode lead-in wire 13;
Described fixed station 7 is provided with fixed orifice 8, and fixed station 7 is fastenedly connected with clamp base 6;
The lower surface of described clamp base 6 is provided with 2 pilot pins 15, the spot detection device of described high power semiconductor lasers also comprises heat dissipation base 3, heat dissipation base 3 is provided with 2 and pilot pin 15 corresponding positioning hole 16, and anchor clamps 2 are fixedlyed connected with heat dissipation base 3 with pilot hole 16 by pilot pin 15.
Lens 4 are the convex lens of 1cm for diameter and can take off in good time replacing from lens body 1 in the present embodiment, and the material of lens body 1 is plastics; The material of heat dissipation base 3 is aluminium or oxygen-free copper, has guaranteed good heat conduction.
Claims (8)
1. the spot detection device of a high power semiconductor lasers, comprise anchor clamps and the lens body that is installed on the anchor clamps, it is characterized in that lens body comprises the location cylinder of lower ending opening and is arranged on the lens of cylinder upper surface, location, on the vertical axis that is centered close to the location cylinder of lens; Anchor clamps comprise clamp base and the insulation spacer that is installed with fixed station, fixed station is the circular arc platform structure that has same radius with the location cylinder, the center of the center of lens and fixed station place circle is on the same axis, the upper surface of fixed station is installed with the positioning step positive electrode of holding concurrently, the positioning step positive electrode of holding concurrently is provided with the side of vertical direction, be installed with negative electrode on the insulation spacer, hold concurrently positive electrode and negative electrode of positioning step fixedlyed connected positive electrode lead-in wire and negative electrode by the lead-in wire fixed orifice respectively and gone between.
2. the spot detection device of high power semiconductor lasers according to claim 1 is characterized in that, described lens are convex lens.
3. the spot detection device of high power semiconductor lasers according to claim 2 is characterized in that, described convex lens diameter is 1～3cm.
4. the spot detection device of high power semiconductor lasers according to claim 1 is characterized in that, the side of cylinder lower end, described location is provided with breach.
5. the spot detection device of high power semiconductor lasers according to claim 1 is characterized in that, the mode of fixedlying connected of described fixed station and clamp base is for being connected.
6. the spot detection device of high power semiconductor lasers according to claim 1 is characterized in that fixed station is provided with fixed orifice, and fixed station and clamp base are fastenedly connected.
7. the spot detection device of high power semiconductor lasers according to claim 1 is characterized in that, the lower surface of described clamp base is provided with 2 pilot pins.
8. the spot detection device of high power semiconductor lasers according to claim 7, it is characterized in that, the spot detection device of described high power semiconductor lasers also comprises heat dissipation base, heat dissipation base is provided with and the pilot pin corresponding positioning hole, and anchor clamps are fixedlyed connected with heat dissipation base with pilot hole by pilot pin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320159679 CN203203778U (en) | 2013-03-30 | 2013-03-30 | High power semiconductor laser light spot detection apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320159679 CN203203778U (en) | 2013-03-30 | 2013-03-30 | High power semiconductor laser light spot detection apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203203778U true CN203203778U (en) | 2013-09-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201320159679 Expired - Lifetime CN203203778U (en) | 2013-03-30 | 2013-03-30 | High power semiconductor laser light spot detection apparatus |
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| CN (1) | CN203203778U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104075873A (en) * | 2013-03-30 | 2014-10-01 | 山东华光光电子有限公司 | Light spot detecting device and method of high-power semiconductor lasers |
| US20160072252A1 (en) * | 2014-09-04 | 2016-03-10 | Canare Electric Co., Ltd. | Semiconductor Lasers |
| CN112014073A (en) * | 2020-09-03 | 2020-12-01 | 湖南镭目科技有限公司 | Laser detection device and laser detection method for alignment of high-energy laser beam |
-
2013
- 2013-03-30 CN CN 201320159679 patent/CN203203778U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104075873A (en) * | 2013-03-30 | 2014-10-01 | 山东华光光电子有限公司 | Light spot detecting device and method of high-power semiconductor lasers |
| CN104075873B (en) * | 2013-03-30 | 2017-02-08 | 山东华光光电子股份有限公司 | Light spot detecting device and method of high-power semiconductor lasers |
| US20160072252A1 (en) * | 2014-09-04 | 2016-03-10 | Canare Electric Co., Ltd. | Semiconductor Lasers |
| US20170070028A1 (en) * | 2014-09-04 | 2017-03-09 | Canare Electric Co., Ltd. | Laser Light Modules |
| CN112014073A (en) * | 2020-09-03 | 2020-12-01 | 湖南镭目科技有限公司 | Laser detection device and laser detection method for alignment of high-energy laser beam |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Patentee after: SHANDONG HUAGUANG OPTOELECTRONICS CO., LTD. Address before: 250101 Shandong city of Ji'nan province high tech Zone (Lixia) Tianchen Street No. 1835 Patentee before: Shandong Huaguang Photoelectronic Co., Ltd. |