CN203193603U - Transistor light-sensing device with malfunction-avoiding function - Google Patents
Transistor light-sensing device with malfunction-avoiding function Download PDFInfo
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- CN203193603U CN203193603U CN 201320181416 CN201320181416U CN203193603U CN 203193603 U CN203193603 U CN 203193603U CN 201320181416 CN201320181416 CN 201320181416 CN 201320181416 U CN201320181416 U CN 201320181416U CN 203193603 U CN203193603 U CN 203193603U
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- triode
- resistance
- sensing device
- electric capacity
- capacitor
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Abstract
The utility model discloses a transistor light-sensing device with a malfunction-avoiding function. The transistor light-sensing device comprises a first triode, a second triode, a third triode, a first capacitor, a second capacitor, a third capacitor, a first resistor, a second resistor, a third resistor, a fourth resistor and a fifth resistor. According to the transistor light-sensing device disclosed by the utility model, a current flowing through the emitter of a phototransistor is in direct proportion to the intensity of incident light, so that the bias of the base of the phototransistor is reduced and cannot achieve a saturated state, thus forming a self-bias circuit; and the intensity of the self-bias circuit is fed back, so that the transistor light-sensing device is stable in working, and free from the malfunctions caused by external light.
Description
Technical field
The utility model relates to a kind of phototransistor infrared rays receiver, relates in particular to a kind of transistor photosensitive device of avoiding the misoperation function that has.
Background technology
In optical pickup apparatus, the luminous average ambient light of identification and the impulse wave of can be used as of pulsed, this device output not only has conducting, cut-off state, also has the pulse train output identical with driving frequency, but, if phototransistor is subjected to photo-labile, cause ambient light to cause misoperation, reliability will descend.
Summary of the invention
The purpose of this utility model provides a kind of transistor photosensitive device of avoiding the misoperation function that has with regard to being in order to address the above problem.
The utility model is achieved through the following technical solutions above-mentioned purpose:
The utility model comprises first triode, second triode, the 3rd triode, first electric capacity, second electric capacity, the 3rd electric capacity, first resistance, second resistance, the 3rd resistance, the 4th resistance and the 5th resistance, the collector electrode of described first triode is connected with the base stage of described second triode and first end of described first resistance simultaneously, the emitter of described first triode is connected with first end of described second resistance, the base stage while of described first triode and first end of described first electric capacity, first end of described the 3rd resistance, first end of described second electric capacity is connected with the emitter of described second triode, second end while of described first resistance and the collector electrode of described second triode, first end of described the 5th resistance, first end of described the 3rd electric capacity, second end of described the 3rd electric capacity, second end of described the 5th resistance, first end of described the 4th resistance, the collector electrode of described the 3rd triode, the emitter of described the 3rd triode, second end of described the 3rd resistance, second end of described first electric capacity is connected with second end of described second resistance, and second end of described the 4th resistance is connected with second end of described second electric capacity and the base stage of described the 3rd triode simultaneously.
Second triode described in the utility model is phototriode, and described first triode and described the 3rd triode are NPN type triode.
The beneficial effects of the utility model are:
The electric current that the utility model flows through the phototransistor emitter is directly proportional with the incident light intensity, the base stage offset of optotransistor is reduced, attitude can not reach capacity, thereby constituted from the offset circuit, be fed from the offset current strength, so working stability can not cause the misoperation that is caused by ambient light.
Description of drawings
Fig. 1 is circuit structure schematic diagram of the present utility model.
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing:
As shown in Figure 1: the utility model comprises the first triode VT1, the second triode VT2, the 3rd triode VT3, first capacitor C 1, second capacitor C 2, the 3rd capacitor C 3, first resistance R 1, second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4 and the 5th resistance R 5, the collector electrode of the first triode VT1 is connected with the base stage of the second triode VT2 and first end of first resistance R 1 simultaneously, the emitter of the first triode VT1 is connected with first end of second resistance R 2, the base stage while of the first triode VT1 and first end of first capacitor C 1, first end of the 3rd resistance R 3, first end of second capacitor C 2 is connected with the emitter of the second triode VT2, second end while of first resistance R 1 and the collector electrode of the second triode VT2, first end of the 5th resistance R 5, first end of the 3rd capacitor C 3, second end of the 3rd capacitor C 3, second end of the 5th resistance R 5, first end of the 4th resistance R 4, the collector electrode of the 3rd triode VT3, the emitter of the 3rd triode VT3, second end of the 3rd resistance R 3, second end of first capacitor C 1 is connected with second end of second resistance R 2, and second end of the 4th resistance R 4 is connected with second end of second capacitor C 2 and the base stage of the 3rd triode VT3 simultaneously.
As shown in Figure 1: the utility model second triode VT2 is phototriode, and the first triode VT1 and the 3rd triode VT3 are NPN type triode.
As shown in Figure 1: the electric current that flows through the second triode VT2 emitter is directly proportional with the incident light intensity, as the incident ambient light, the second triode VT2 base stage just has electric current and flows through, collector voltage reduces, the base stage offset of the second triode VT2 is reduced, the attitude that can not reach capacity, thus constituted from the offset circuit.As do not have ambient light, and have only light modulated, its intensity is fed, so working stability.The averaging circuit that the 3rd resistance R 3 and the first capacitor C1 constitute constant at that time is set at recurrent pulses light is not responded, and is only permitted ambient light and passes through.
Claims (2)
1. one kind has the transistor photosensitive device of avoiding the misoperation function, it is characterized in that: comprise first triode, second triode, the 3rd triode, first electric capacity, second electric capacity, the 3rd electric capacity, first resistance, second resistance, the 3rd resistance, the 4th resistance and the 5th resistance, the collector electrode of described first triode is connected with the base stage of described second triode and first end of described first resistance simultaneously, the emitter of described first triode is connected with first end of described second resistance, the base stage while of described first triode and first end of described first electric capacity, first end of described the 3rd resistance, first end of described second electric capacity is connected with the emitter of described second triode, second end while of described first resistance and the collector electrode of described second triode, first end of described the 5th resistance, first end of described the 3rd electric capacity, second end of described the 3rd electric capacity, second end of described the 5th resistance, first end of described the 4th resistance, the collector electrode of described the 3rd triode, the emitter of described the 3rd triode, second end of described the 3rd resistance, second end of described first electric capacity is connected with second end of described second resistance, and second end of described the 4th resistance is connected with second end of described second electric capacity and the base stage of described the 3rd triode simultaneously.
2. according to claim 1 have a transistor photosensitive device of avoiding the misoperation function, and it is characterized in that: described second triode is phototriode, and described first triode and described the 3rd triode are NPN type triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320181416 CN203193603U (en) | 2013-04-12 | 2013-04-12 | Transistor light-sensing device with malfunction-avoiding function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320181416 CN203193603U (en) | 2013-04-12 | 2013-04-12 | Transistor light-sensing device with malfunction-avoiding function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203193603U true CN203193603U (en) | 2013-09-11 |
Family
ID=49110427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320181416 Expired - Fee Related CN203193603U (en) | 2013-04-12 | 2013-04-12 | Transistor light-sensing device with malfunction-avoiding function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203193603U (en) |
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2013
- 2013-04-12 CN CN 201320181416 patent/CN203193603U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130911 Termination date: 20140412 |