CN203187782U - Device for preparing single crystal graphene - Google Patents
Device for preparing single crystal graphene Download PDFInfo
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- CN203187782U CN203187782U CN 201320152203 CN201320152203U CN203187782U CN 203187782 U CN203187782 U CN 203187782U CN 201320152203 CN201320152203 CN 201320152203 CN 201320152203 U CN201320152203 U CN 201320152203U CN 203187782 U CN203187782 U CN 203187782U
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- single crystal
- air outlet
- inner cavity
- exocoel
- preparing
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Abstract
The utility model relates to a device for preparing single crystal graphene. The device comprises a vacuum pump, an air inlet, an outer cavity, a heating device, an air outlet, an inner cavity and an exhaust pipe. The device is structurally characterized in that the intermediate part of the outer cavity is internally provided with the inner cavity; the heating device is positioned outside the outer cavity and is close to the position of the inner cavity; both ends of the outer cavity are respectively provided with the air inlet and the air outlet; the air outlet is connected with one end of the exhaust pipe; the exhaust pipe is connected with the vacuum pump; the structure of the inner cavity is as follows: one end which is close to the air inlet is closed, and the other end is opened; and the inner cavity and the outer cavity are hollow cylindrical or square cavities. The device disclosed by the utility model can be used for preparing the high-quality single crystal graphene on metals, such as copper, platinum, by adopting a CVD (Chemical Vapor Deposition) technology, has the advantages of simple structure, good prepared single crystal graphene quality, is convenient to use, can easily control graphene size and layer number, and can be used for preparing the single crystal graphene which has the advantages of large size, low cost, high electron mobility and good symmetry on a metal surface.
Description
Technical field
The utility model relates to a kind of Graphene preparation facilities, relates in particular to a kind of device for preparing single crystal graphite alkene.
Background technology
The method for preparing at present Graphene mainly contains following several: micromechanics partition method, epitaxy method, heating SiC method, the method for chemical vapour deposition (CVD), chemical reduction method, chemical cleavage method.And preparing the complex process that has in the method for single crystal graphite alkene, the shape to single crystal graphite alkene that has, size are difficult to control.Up to the present also there is not a kind of device that uses simply and can prepare large size, high quality single crystal Graphene.
Summary of the invention
The purpose of this utility model has been to provide a kind of device for preparing single crystal graphite alkene, and it has advantage easy to use and preparation single crystal graphite alkene quality better.
The utility model is achieved like this, a kind of device for preparing single crystal graphite alkene, it comprises vacuum pump, inlet mouth, exocoel, heating unit, air outlet, inner chamber and vapor pipe, it is characterized in that being provided with inner chamber in the exocoel middle part, heating unit is positioned at outside the exocoel, and near the inner chamber position, the two ends of exocoel are respectively equipped with inlet mouth and air outlet, the air outlet is connected an end of vapor pipe, is connected with vacuum pump on the vapor pipe; Described inner-cavity structure is the end sealing near inlet mouth, and the other end opens wide; Described inner chamber and exocoel are hollow cylindrical or square cavity.Heating unit comprises: devices such as infrared heating, electromagnetism heating, beam bombardment heating, microwave heating, resistance furnace, induction heating, radiation heating, laser, plasma body, surface plasma excimer heating.Use this device to adopt the CVD technology to prepare high-quality single crystal graphite alkene at metals such as copper, platinum.
Technique effect of the present utility model is: the utility model is not only simple in structure, uses also very conveniently, and preparation single crystal graphite alkene quality better is easy to control to size and the number of plies of Graphene; The large size that can prepare in the metallic surface, low cost, electronic mobility height, the single crystal graphite alkene that symmetry is good.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
As shown in Figure 1, the utility model is achieved like this, it comprises vacuum pump 1, inlet mouth 2, exocoel 3, heating unit 4, air outlet 5, inner chamber 6 and vapor pipe 7, its constructional feature is to be provided with inner chamber 6 in exocoel 3 middle parts, heating unit 4 is positioned at outside the exocoel 3, and near inner chamber 6 positions, the two ends of exocoel 3 are respectively equipped with inlet mouth 2 and air outlet 5, air outlet 5 is connected an end of vapor pipe 7, is connected with vacuum pump 1 on the vapor pipe 7; Described inner chamber 6 structures are the end sealing near inlet mouth 2, and the other end opens wide; Described inner chamber 6 and exocoel 3 are hollow cylindrical or square cavity.Heating unit 4 comprises: devices such as infrared heating, electromagnetism heating, beam bombardment heating, microwave heating, resistance furnace, induction heating, radiation heating, laser, plasma body, surface plasma excimer heating.Use this device to adopt the CVD technology to prepare high-quality single crystal graphite alkene at metals such as copper, platinum.
The concrete step of using is as follows: 1, the tinsel with cleaning is placed in the inner chamber 6, opens vacuum pump 1, and inner chamber 6 forms negative pressure, with rare gas element with the air emptying in the whole cavity.With heating unit 4 heating zone is heated to more than 1000 ℃; 2, carbonaceous gas, hydrogen and rare gas element are passed in the cavity specification of the single crystal graphite alkene that the flow velocity of each gas and the time of ventilation can prepare as required and deciding; 3, close all sources of the gas, remove heating 4 devices, close vacuum pump 1; 4, treat that whole device is cooled to room temperature after, tinsel is taken out, namely prepare high-quality single crystal graphite alkene.
Claims (3)
1. device for preparing single crystal graphite alkene, it comprises vacuum pump, inlet mouth, exocoel, heating unit, air outlet, inner chamber and vapor pipe, it is characterized in that being provided with inner chamber in the exocoel middle part, heating unit is positioned at outside the exocoel, and near the inner chamber position, the two ends of exocoel are respectively equipped with inlet mouth and air outlet, and the air outlet is connected an end of vapor pipe, is connected with vacuum pump on the vapor pipe.
2. a kind of device for preparing single crystal graphite alkene as claimed in claim 1 is characterized in that described inner-cavity structure is the end sealing near inlet mouth, and the other end opens wide.
3. a kind of device for preparing single crystal graphite alkene as claimed in claim 1 or 2 is characterized in that described inner chamber and exocoel are hollow cylindrical or square cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320152203 CN203187782U (en) | 2013-03-30 | 2013-03-30 | Device for preparing single crystal graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320152203 CN203187782U (en) | 2013-03-30 | 2013-03-30 | Device for preparing single crystal graphene |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203187782U true CN203187782U (en) | 2013-09-11 |
Family
ID=49104656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320152203 Expired - Fee Related CN203187782U (en) | 2013-03-30 | 2013-03-30 | Device for preparing single crystal graphene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203187782U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104695012A (en) * | 2015-03-24 | 2015-06-10 | 山东大学 | Device and method for preparing large-size high-quality graphene single crystal |
| CN107539974A (en) * | 2017-10-20 | 2018-01-05 | 金建德 | A kind of device quickly prepared for graphene |
-
2013
- 2013-03-30 CN CN 201320152203 patent/CN203187782U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104695012A (en) * | 2015-03-24 | 2015-06-10 | 山东大学 | Device and method for preparing large-size high-quality graphene single crystal |
| CN104695012B (en) * | 2015-03-24 | 2017-03-22 | 山东大学 | Device and method for preparing large-size high-quality graphene single crystal |
| CN107539974A (en) * | 2017-10-20 | 2018-01-05 | 金建德 | A kind of device quickly prepared for graphene |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130911 Termination date: 20140330 |