CN203180902U - A frequency modulation transmitter with strong anti-interference performance - Google Patents
A frequency modulation transmitter with strong anti-interference performance Download PDFInfo
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- CN203180902U CN203180902U CN 201320139795 CN201320139795U CN203180902U CN 203180902 U CN203180902 U CN 203180902U CN 201320139795 CN201320139795 CN 201320139795 CN 201320139795 U CN201320139795 U CN 201320139795U CN 203180902 U CN203180902 U CN 203180902U
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- frequency modulation
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Abstract
The utility model discloses a frequency modulation transmitter with strong anti-interference performance. The frequency modulation transmitter comprises an audio input circuit, a pre-emphasis network circuit, an audio amplifying circuit, an oscillation frequency modulation circuit, a high-frequency amplifying circuit, and an antenna. The pre-emphasis network circuit is composed of a third resistor and a thirteenth capacitor. The first end of the third resistor is connected with the first end of the thirteenth capacitor. The second end of the third resistor is connected with the second end of the thirteenth capacitor. The audio amplifying circuit comprises a first transistor, a fourth resistor, a fifth resistor, a sixth resistor, and a seventh resistor. By applying the pre-emphasis network circuit to the frequency modulation transmitter, a signal has been filtered before suffering from amplification, excitation, power amplification, and a series of impedance matching. Compared with a conventional frequency modulation transmitter, the frequency modulation transmitter has advantages of strong anti-interference performance, low cost, and long emitting distance.
Description
Technical field
The utility model relates to a kind of frequency modulated transmitter, particularly relates to a kind of frequency modulated transmitter of strong interference immunity.
Background technology
Frequency modulated transmitter at first is modulated to frequency-modulated wave with audio signal and high frequency carrier, and the frequency of high frequency carrier is changed with audio signal, the high-frequency signal that produces is amplified again, excitation, power amplifier and a series of impedance matching make signal output to antenna, the device that sends.The generation of high-frequency signal has modes such as frequency synthesis, PLL now.The frequency range 88-108MHZ of the commercial FM broadcasting of present China, the campus is 76-87MHZ, western countries are 70-90MHZ.Existing frequency modulated transmitter exists anti-interference poor, shortcomings such as cost height.
The utility model content
The purpose of this utility model is the frequency modulated transmitter that a kind of safe and reliable, strong interference immunity that cost is low is provided in order to address the above problem.
The utility model is achieved through the following technical solutions:
A kind of frequency modulated transmitter of strong interference immunity, comprise the audio frequency input circuit, the preemphasis network circuit, audio amplifier circuit, the vibration FM circuit, high-frequency amplifier circuit and antenna, described preemphasis network circuit is made up of the 3rd resistance and the 13 electric capacity, first end of described the 3rd resistance is connected with first end of described the 13 electric capacity, second end of described the 3rd resistance and second end of described the 13 electric capacity are connected, described audio amplifier circuit comprises the first transistor, the 4th resistance, the 5th resistance, the 6th resistance and the 7th resistance, the base stage of described the first transistor is connected with first end of described the 4th resistance and first end of described the 5th resistance respectively, the collector electrode of described the first transistor is connected with first end of described the 6th resistance, the emitter of described the first transistor is connected with first end of described the 7th resistance, described vibration FM circuit comprises transistor seconds, the 4th electric capacity, the 5th electric capacity, the 6th electric capacity, the 7th electric capacity, the 8th resistance, the 9th resistance, the tenth resistance and first inductance, the base stage of described transistor seconds respectively with first end of described the 8th resistance, first end of described the 6th electric capacity, first end of the 5th electric capacity is connected with first end of the 9th resistance, second end of described the 5th electric capacity is connected with first end of described the 4th electric capacity and first end of described first inductance respectively, second end of described the 4th electric capacity respectively with first end of described first inductance, second end of the 9th resistance is connected with first end of described the 7th electric capacity, second end of described the 7th electric capacity respectively with second end of described the 6th electric capacity, the emitter of transistor seconds, first end of the 9th electric capacity is connected with first end of described the tenth resistance.
Further, described high-frequency amplifier circuit comprises the 8th electric capacity, the tenth electric capacity, the 11 electric capacity, the 12 electric capacity, the 11 resistance, the 12 resistance, second inductance and the 3rd inductance, first end of described the 8th electric capacity and first end of described second inductance, first end of the 11 electric capacity is connected with first end of the 3rd inductance, second end of described the 8th electric capacity respectively with second end of described second inductance, first end of the tenth electric capacity, first end of the 3rd transistorized collector electrode and described the 11 resistance is connected, second end of described the 11 resistance is connected with the described the 3rd transistorized base stage, the described the 3rd transistorized emitter is connected with the 4th transistorized emitter, second end of described the tenth electric capacity is connected with the described the 4th transistorized base stage with first end of described the 12 resistance respectively, second end of described the 12 resistance respectively with first end of described the 11 electric capacity, first end of described the 3rd inductance, first end of described the 12 electric capacity is connected with the 4th transistorized collector electrode, and second end of described the 12 electric capacity is connected with described antenna.
Further, described audio frequency input circuit comprises first electric capacity, second electric capacity, first resistance, second resistance, audio input interface and microphone, first end of described audio input interface and first end of described microphone, second end of described audio input interface is connected with first end of described first resistance, second end of described first resistance is connected with first end of described second resistance, first end of second electric capacity and second end of described microphone respectively, the second end ground connection of second end of described first electric capacity and described second electric capacity.
The beneficial effects of the utility model are:
By in the utility model, increasing the preemphasis network circuit, making signal carry out filtering before through amplification, excitation, power amplifier and a series of impedance handles, compare with traditional frequency modulated transmitter, of the present utility modelly have strong interference immunity, an advantage such as cost is low and transmitting range is far away.
Description of drawings
Fig. 1 is the circuit diagram of the frequency modulated transmitter of a kind of strong interference immunity of the utility model.
Embodiment
The utility model is described in further detail below in conjunction with drawings and the specific embodiments:
As shown in Figure 1, the frequency modulated transmitter of a kind of strong interference immunity of the utility model, comprise the audio frequency input circuit, the preemphasis network circuit, audio amplifier circuit, the vibration FM circuit, high-frequency amplifier circuit and antenna, described preemphasis network circuit is made up of the 3rd resistance R 3 and the 13 capacitor C 13, first end of described the 3rd resistance R 3 is connected with first end of described the 13 capacitor C 13, second end of described the 3rd resistance R 3 is connected with second end of described the 13 capacitor C 13, described audio amplifier circuit comprises the first transistor VT1, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6 and the 7th resistance R 7, the base stage of described the first transistor VT1 is connected with first end of described the 4th resistance R 4 and first end of described the 5th resistance R 5 respectively, the collector electrode of described the first transistor VT1 is connected with first end of described the 6th resistance R 6, the emitter of described the first transistor VT1 is connected with first end of described the 7th resistance R 7, described vibration FM circuit comprises transistor seconds VT2, the 4th capacitor C 4, the 5th capacitor C 5, the 6th capacitor C 6, the 7th capacitor C 7, the 8th resistance R 8, the 9th resistance R 9, the tenth resistance R 10 and first inductance L 1, the base stage of described transistor seconds VT2 respectively with first end of described the 8th resistance R 8, first end of described the 6th capacitor C 6, first end of the 5th capacitor C 5 is connected with first end of the 9th resistance R 9, second end of described the 5th capacitor C 5 is connected with first end of described the 4th capacitor C 4 and first end of described first inductance L 1 respectively, second end of described the 4th capacitor C 4 respectively with first end of described first inductance L 1, second end of the 9th resistance R 9 is connected with first end of described the 7th capacitor C 7, second end of described the 7th capacitor C 7 respectively with second end of described the 6th capacitor C 6, the emitter of transistor seconds VT2, first end of the 9th capacitor C 9 is connected with first end of described the tenth resistance R 10.
Described high-frequency amplifier circuit comprises the 8th capacitor C 8, the tenth capacitor C 10, the 11 capacitor C 11, the 12 capacitor C 12, the 11 resistance R 11, the 12 resistance R 12, second inductance L 2 and the 3rd inductance L 3, first end of first end of described the 8th capacitor C 8 and described second inductance L 2, first end of the 11 capacitor C 11 is connected with first end of the 3rd inductance L 3, second end of described the 8th capacitor C 8 respectively with second end of described second inductance L 2, first end of the tenth capacitor C 10, the collector electrode of the 3rd transistor VT3 is connected with first end of described the 11 resistance R 11, second end of described the 11 resistance R 11 is connected with the base stage of described the 3rd transistor VT3, the emitter of described the 3rd transistor VT3 is connected with the emitter of the 4th transistor VT4, second end of described the tenth capacitor C 10 is connected with first end of described the 12 resistance R 12 and the base stage of described the 4th transistor VT4 respectively, second end of described the 12 resistance R 12 respectively with first end of described the 11 capacitor C 11, first end of described the 3rd inductance L 3, first end of described the 12 capacitor C 12 is connected with the collector electrode of the 4th transistor VT4, and second end of described the 12 capacitor C 12 is connected with described antenna.
Described audio frequency input circuit comprises first capacitor C 1, second capacitor C 2, first resistance R 1, second resistance R 2, audio input interface and microphone, first end of described audio input interface and first end of described microphone, second end of described audio input interface is connected with first end of described first resistance R 1, second end of described first resistance R 1 is connected with first end of described second resistance R 2, first end of second capacitor C 2 and second end of described microphone respectively, the second end ground connection of second end of described first capacitor C 1 and described second capacitor C 2.
Claims (2)
1. the frequency modulated transmitter of a strong interference immunity, it is characterized in that: comprise the audio frequency input circuit, the preemphasis network circuit, audio amplifier circuit, the vibration FM circuit, high-frequency amplifier circuit and antenna, described preemphasis network circuit is made up of the 3rd resistance and the 13 electric capacity, first end of described the 3rd resistance is connected with first end of described the 13 electric capacity, second end of described the 3rd resistance and second end of described the 13 electric capacity are connected, described audio amplifier circuit comprises the first transistor, the 4th resistance, the 5th resistance, the 6th resistance and the 7th resistance, the base stage of described the first transistor is connected with first end of described the 4th resistance and first end of described the 5th resistance respectively, the collector electrode of described the first transistor is connected with first end of described the 6th resistance, the emitter of described the first transistor is connected with first end of described the 7th resistance, described vibration FM circuit comprises transistor seconds, the 4th electric capacity, the 5th electric capacity, the 6th electric capacity, the 7th electric capacity, the 8th resistance, the 9th resistance, the tenth resistance and first inductance, the base stage of described transistor seconds respectively with first end of described the 8th resistance, first end of described the 6th electric capacity, first end of the 5th electric capacity is connected with first end of the 9th resistance, second end of described the 5th electric capacity is connected with first end of described the 4th electric capacity and first end of described first inductance respectively, second end of described the 4th electric capacity respectively with first end of described first inductance, second end of the 9th resistance is connected with first end of described the 7th electric capacity, second end of described the 7th electric capacity respectively with described the 6th electric capacity, the emitter of transistor seconds, first end of the 9th electric capacity is connected with first end of described the tenth resistance.
2. the frequency modulated transmitter of a kind of strong interference immunity according to claim 1, it is characterized in that: described high-frequency amplifier circuit comprises the 8th electric capacity, the tenth electric capacity, the 11 electric capacity, the 12 electric capacity, the 11 resistance, the 12 resistance, second inductance and the 3rd inductance, first end of described the 8th electric capacity and first end of described second inductance, first end of the 11 electric capacity is connected with first end of the 3rd inductance, second end of described the 8th electric capacity respectively with second end of described second inductance, first end of the tenth electric capacity, first end of the 3rd transistorized collector electrode and described the 11 resistance is connected, second end of described the 11 resistance is connected with the described the 3rd transistorized base stage, the described the 3rd transistorized emitter is connected with the 4th transistorized emitter, second end of described the tenth electric capacity is connected with the described the 4th transistorized base stage with first end of described the 12 resistance respectively, second end of described the 12 resistance respectively with first end of described the 11 electric capacity, first end of described the 3rd inductance, first end of described the 12 electric capacity is connected with the 4th transistorized collector electrode, and second end of described the 12 electric capacity is connected with described antenna.
3. the frequency modulated transmitter of a kind of strong interference immunity according to claim 1, it is characterized in that: described audio frequency input circuit comprises first electric capacity, second electric capacity, first resistance, second resistance, audio input interface and microphone, first end of described audio input interface and first end of described microphone, second end of described audio input interface is connected with first end of described first resistance, second end of described first resistance respectively with first end of described second resistance, first end of second electric capacity and second end of described microphone are connected, the second end ground connection of second end of described first electric capacity and described second electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320139795 CN203180902U (en) | 2013-03-24 | 2013-03-24 | A frequency modulation transmitter with strong anti-interference performance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320139795 CN203180902U (en) | 2013-03-24 | 2013-03-24 | A frequency modulation transmitter with strong anti-interference performance |
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| Publication Number | Publication Date |
|---|---|
| CN203180902U true CN203180902U (en) | 2013-09-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201320139795 Expired - Fee Related CN203180902U (en) | 2013-03-24 | 2013-03-24 | A frequency modulation transmitter with strong anti-interference performance |
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| CN (1) | CN203180902U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103731165A (en) * | 2012-10-14 | 2014-04-16 | 四川九鼎数码科技有限公司 | Crystal oscillator type frequency modulation transmitter for cordless telephone |
| CN107579742A (en) * | 2017-08-10 | 2018-01-12 | 江西吉斯电子科技有限公司 | A kind of new frequency modulation transmitter |
-
2013
- 2013-03-24 CN CN 201320139795 patent/CN203180902U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103731165A (en) * | 2012-10-14 | 2014-04-16 | 四川九鼎数码科技有限公司 | Crystal oscillator type frequency modulation transmitter for cordless telephone |
| CN107579742A (en) * | 2017-08-10 | 2018-01-12 | 江西吉斯电子科技有限公司 | A kind of new frequency modulation transmitter |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130904 Termination date: 20140324 |