CN203151203U - Power supply switching device - Google Patents
Power supply switching device Download PDFInfo
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- CN203151203U CN203151203U CN 201220715555 CN201220715555U CN203151203U CN 203151203 U CN203151203 U CN 203151203U CN 201220715555 CN201220715555 CN 201220715555 CN 201220715555 U CN201220715555 U CN 201220715555U CN 203151203 U CN203151203 U CN 203151203U
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Abstract
The utility model relates to a power supply switching device, which comprises a first power supply unit and a second power supply unit, wherein the first power supply unit comprises a first power supply and a first switch, the second power supply unit comprises a second power supply and a second switch, and the first power supply and the second power supply are connected with a load through the first switch and the second switch respectively. The power supply switching device further comprises a detection control unit which is used for detecting current or voltage of a first node or a second node of the first power supply unit and controlling on-off of the first switch or the second switch according to the detected value. Implementation of the power supply switching device provided by the utility model has the beneficial effects that the thermal design difficulty is low, the size of the system is small, and the cost is low.
Description
Technical field
The utility model relates to the power supply field, more particularly, relates to a kind of power transfer device.
Background technology
At present, Medical Devices on the market all have the dual power supply function, namely support external AC power supply and battery to power, alternating current is transformed to the DC power supply through AC/DC power module or AC adapter, this DC supply voltage generally is slightly larger than the battery maximum voltage, therefore the DC power supply both can charge the battery, and can power to machine system again.When using the power supply of DC power supply, internal cell is not powered.At present, Medical Devices all adopt diode to carry out between the two switching when using DC power supply and powered battery, and there is following defective in this changing method: because the diode heating is big, strengthen the complete machine internal temperature rise, increased the difficulty of the thermal design of system; When the power of equipment is big, for example: when needing to continue the supply current of 3A or 4A, diode will generate heat excessive, need fin be installed to diode, has increased volume and the cost of system.
The utility model content
The technical problems to be solved in the utility model is, above-mentioned thermal design difficulty at prior art is big, big, the higher defective of cost of the volume of system, provides a kind of thermal design difficulty volume less, system less, lower-cost power transfer device.
The technical scheme that its technical problem that solves the utility model adopts is: construct a kind of power transfer device, comprise first power supply unit and second power supply unit, described first power supply unit comprises first power supply and first switch, described second power supply unit comprises second source and second switch, and described first power supply is connected with load with second switch by described first switch respectively with second source; Also comprise for detection of the curtage of first node or Section Point in described first power supply unit and the detection control unit controlling described first switch or second switch conducting or end according to detected value.
In power transfer device described in the utility model, described first power supply is DC power supply or battery, and described second source is battery or DC power supply.
In power transfer device described in the utility model, described DC power source voltage is greater than the voltage of described battery.
In power transfer device described in the utility model, described first switch is first metal-oxide-semiconductor, and described second switch is second metal-oxide-semiconductor; The drain electrode of described first metal-oxide-semiconductor is connected with the output of described DC power supply, and grid is connected with an output of described detection control unit, and source electrode is connected with load with an input of described detection control unit respectively through described first node; The drain electrode of described second metal-oxide-semiconductor is connected with the positive pole of described power supply, grid is connected with another output of described detection control unit, source electrode is connected with described load, it also is connected described first node and Section Point short circuit through described Section Point with another input of described detection control unit.
In power transfer device described in the utility model, described first power supply unit also comprises first resistance that is arranged between described first node and the Section Point.
In power transfer device described in the utility model, described first power supply unit also comprises the 3rd metal-oxide-semiconductor, the grid of described the 3rd metal-oxide-semiconductor is connected with an output of described detection control unit, source electrode is connected with another input of described detection control unit through described Section Point, and drain electrode is connected with described load.
In power transfer device described in the utility model, described first power supply unit also comprises second resistance and second electric capacity, described second resistance is attempted by between the grid and source electrode of described first metal-oxide-semiconductor, and described second electric capacity is attempted by between the grid and source electrode of described second metal-oxide-semiconductor.
In power transfer device described in the utility model, described first power supply unit also comprises first electric capacity and the 3rd resistance, and described first electric capacity is in parallel with described second resistance, and described the 3rd resistance is in parallel with described second electric capacity.
In power transfer device described in the utility model, described first metal-oxide-semiconductor, second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor are all the P channel MOS tube that has parasitic diode.
In power transfer device described in the utility model, described DC power supply is to be converted to by internal or external AC/DC power module or AC adapter by alternating current.
Implement power transfer device of the present utility model, has following beneficial effect: because first power supply unit comprises first power supply and first switch, second power supply unit comprises second source and second switch, and first power supply is connected with load with second switch by first switch respectively with second source; Detect control unit by detecting first node in first power supply unit or Section Point curtage and control first switch or second switch conducting or end according to detected value, thereby realize the switching between first power supply and the second source, in addition, because the power consumption of first switch and second switch is less, the employing natural heat dissipation gets final product, reduced system bulk, reduced cost, simultaneously because the conducting resistance of first switch and second switch is little, its power consumption is less, thermal design to system can be ignored, and has reduced the design difficulty of system; So its battery flying power better, thermal design difficulty volume less, system is less, cost is lower.
Description of drawings
Fig. 1 is the structural representation of the utility model power transfer device in first embodiment;
Fig. 2 is the circuit theory schematic diagram of power transfer device among described first embodiment;
Fig. 3 is the circuit theory schematic diagram of power transfer device among second embodiment.
Embodiment
Can understand and implement the utility model for the ease of those of ordinary skill in the art, below in conjunction with accompanying drawing the utility model embodiment is described further.
In first embodiment, the structural representation of power transfer device as shown in Figure 1.Among Fig. 1, this power transfer device comprises first power supply unit 01, second power supply unit 02 and detects control unit 03; Wherein, first power supply unit 01 comprises first power supply and first switch, and second power supply unit 02 comprises second source and second switch, and first power supply is connected with load with second switch by first switch respectively with second source; Detection control unit 03 is also controlled first switch or second switch conducting according to detected value for detection of the curtage of first node or Section Point (seeing also 1 among Fig. 2,2) in first power supply unit 01 or is ended.Among this first embodiment, first power supply is the DC power supply, and second source is battery, and the DC power source voltage is greater than the voltage of battery.What deserves to be mentioned is that among this first embodiment, power transfer device does not comprise load, for convenience of description, Gu also has been drawn in load among the figure.
Fig. 2 is the circuit theory schematic diagram of this first embodiment power transfer device, and among Fig. 2, first switch is the first metal-oxide-semiconductor Q1, and second switch is the second metal-oxide-semiconductor Q2; The drain D of the first metal-oxide-semiconductor Q1 is connected (namely the positive pole with the DC power supply is connected) with the output of DC power supply, its grid G is connected with an output that detects control unit 03, and its source S is connected with load with an input that detects control unit 03 respectively through first node 1.Second power supply unit 02 also comprises the second metal-oxide-semiconductor Q2, the drain D of the second metal-oxide-semiconductor Q2 is connected with the positive pole of power supply Battery, its grid G is connected with another output that detects control unit 03, its source S is connected with load, and the source S of the second metal-oxide-semiconductor Q2 also is connected with another input that detects control unit 03 through Section Point 2.First power supply unit 01 also comprises first resistance R 1 that is arranged between first node 1 and the Section Point 2.
Among this first embodiment, first power supply unit 01 also comprises second resistance R 2, the 3rd resistance R 3, first capacitor C 1 and second capacitor C 2; Wherein, second resistance R 2 is attempted by between the grid G and source S of the first metal-oxide-semiconductor Q1, and second capacitor C 2 is attempted by between the grid G and source S of the second metal-oxide-semiconductor Q2, and first capacitor C 1 is in parallel with second resistance R 2, and the 3rd resistance R 3 is in parallel with second capacitor C 2.Second resistance R 2, the 3rd resistance R 3, first capacitor C 1 and 2 pairs of circuit of second capacitor C play protective action, can be according to actual conditions, second resistance R 2 or/and the resistance of the 3rd resistance R 3 is adjusted, is not perhaps needed to insert second resistance R 2 or/and the 3rd resistance R 3; Certainly, can the appearance value of first capacitor C 1 and second capacitor C 2 be adjusted according to actual conditions, perhaps do not need to insert first capacitor C 1 and second capacitor C 2.Also according to actual needs namely, can select corresponding resistance or electric capacity that circuit is protected.What deserves to be mentioned is that the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 are all the P channel MOS tube that has parasitic diode.Certainly, under the other situation of this first embodiment, the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 also can be all the N-channel MOS pipe that has parasitic diode, at this moment the negative pole of DC power supply and battery should be connected with the drain D of first metal-oxide-semiconductor and the drain D of second metal-oxide-semiconductor respectively certainly.
Among this first embodiment, the DC power source voltage is greater than the voltage of battery Battery.The DC power supply is to be converted to by built-in AC/DC power module or AC adapter by alternating current.Among this first embodiment, AC/DC power module or AC adapter are arranged on device interior, do not need DC Power Supply Hot Swap control function.In the specific implementation, detecting control unit 03 is current sense device, electric current for detection of first node 1 or Section Point 2, and by calculating the voltage difference between current conversion first node 1 and the Section Point 2 (also i.e. the voltage at first resistance R, 1 two ends), and can draw magnitude relationship between the voltage U 2 of the voltage U 1 of first node 1 and Section Point 2 according to voltage difference.
When equipment does not insert the DC power supply (when incoming transport is not electric), detecting control unit 03 detects the electric current of first node 1 or Section Point 2 and obtain U2 after calculating〉U1, at this moment, detecting control unit 03 control ends the first metal-oxide-semiconductor Q1, and make the second metal-oxide-semiconductor Q2 conducting, V_out also is that battery Battery power supply is passed through in load by battery Battery power supply.(during the incoming transport electricity) do not obtain U1 by detection when equipment inserts battery Battery and inserts the DC power supply〉U2, detect control unit 03 control the second metal-oxide-semiconductor Q2 is ended, and make the first metal-oxide-semiconductor Q1 conducting, at this moment V_out is powered by the DC power supply.When equipment inserts DC power supply and battery Battery, obtain U1 by detection〉U2, also namely detect control unit 03 and detect the access of DC power supply, control ends the second metal-oxide-semiconductor Q2, and makes the first metal-oxide-semiconductor Q1 conducting, and at this moment, V_out is powered by the DC power supply.When DC power supply and battery Battery all insert, if alternating current disconnects suddenly, because the second metal-oxide-semiconductor Q2 has a parasitic diode, in the moment that alternating current disconnects suddenly, battery Battery is by the parasitic diode powering load of the second metal-oxide-semiconductor Q2, then detect control unit 03 and obtain U2 by detection U1, conclude that the DC power supply disconnects, detecting control unit 03 control ends the first metal-oxide-semiconductor Q1, and make the second metal-oxide-semiconductor Q2 conducting, because the conduction impedance the when impedance of the parasitic diode of the second metal-oxide-semiconductor Q2 is higher than the second metal-oxide-semiconductor Q2 conducting, this moment, battery Battery was by the second metal-oxide-semiconductor Q2 power to the load (by the second metal-oxide-semiconductor Q2 parasitic diode).When DC power supply and battery Battery all inserted, if battery Battery disconnects suddenly, at this moment system was failure to actuate, and continued to keep the V_out(load) powered by the DC power supply.When battery Battery powers, if the DC power supply inserts suddenly, this moment, the DC power supply was exported by the parasitic diode of the first metal-oxide-semiconductor Q1, because the DC power source voltage of the parasitic diode of first metal-oxide-semiconductor Q1 output is higher than electric Battery voltage, be U1〉U2, this moment, V_out was powered by the parasitic diode that passes through the first metal-oxide-semiconductor Q1 of DC power supply, when detection control unit 03 detects the power supply of DC power supply, control ends the second metal-oxide-semiconductor Q2, and making the first metal-oxide-semiconductor Q1 conducting, V_out is not by the power supply of DC power supply (passing through the parasitic diode of the first metal-oxide-semiconductor Q1).When the DC power supply is powered, insert battery Battery suddenly, this moment, system was failure to actuate, and continued to keep V_out to be powered by the DC power supply.
Among this first embodiment, realized the duplicate supply switching by the break-make of controlling the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2, according to the demand of difference in functionality in the reality, its design can adjust accordingly.It is to be come by AC/DC power module or AC adapter conversion by alternating current at device interior that this first embodiment is fit to the DC power supply, but does not need to support the situation of the hot plug function of DC power supply.Under the other situation of this first embodiment, for example: when detecting control unit 03 and can detect the device of voltage for the MCU of band AD or other, at this moment first node 1 and Section Point 2 short circuits, detect 03 magnitude of voltage that needs to detect first node 1 or Section Point 2 of control unit, and draw DC power supply or battery Battery power supply according to this magnitude of voltage, and then carry out the corresponding metal-oxide-semiconductor of concrete control by still conducting.What deserves to be mentioned is that under the certain situation of this first embodiment, the position of above-mentioned DC power supply and battery Battery is interchangeable.
In the prior art, because the conduction voltage drop of diode increases with the increase of electric current, the maximum pressure drop of general diode (for example: MBR20100CT) can reach 0.75V, if the continuous current of 1A, then the power consumption on diode is 0.75W, reduce the battery flying power so greatly, caused battery flying power variation; Among this first embodiment, because the conducting resistance of the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 is little, its power consumption is less, so less to the flying power influence of battery, namely the flying power of battery is better.
Fig. 3 is the circuit theory schematic diagram of power transfer device among second embodiment.What second embodiment was different with first embodiment is that first power supply unit 01 also comprises the 3rd metal-oxide-semiconductor Q3, has saved first capacitor C 1 and the 3rd resistance R 3; The grid of the 3rd metal-oxide-semiconductor Q3 is connected with an output that detects control unit 03, its source S is connected with another input that detects control unit 03 through Section Point 2, its drain D is connected with load, and second capacitor C 2 is attempted by between the grid G and source S of the 3rd metal-oxide-semiconductor Q3.What deserves to be mentioned is, according to the actual conditions needs, second resistance R 2 or/and the value of second capacitor C 2 can adjust accordingly or it be removed.Among this second embodiment, AC/DC power module or AC adapter are in the outside of equipment, and the DC power supply is to be converted to by external AC/DC power module or AC adapter by alternating current.The 3rd metal-oxide-semiconductor Q3 is also for having the P channel MOS tube of parasitic diode.Certainly, under the other situation of this second embodiment, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2 and the 3rd metal-oxide-semiconductor Q3 also can be all the N-channel MOS pipe that has parasitic diode, at this moment the negative pole of DC power supply and battery should be connected with the drain D of first metal-oxide-semiconductor and the drain D of second metal-oxide-semiconductor respectively certainly.
During concrete enforcement, when equipment does not insert the DC power supply (when incoming transport is not electric), detect control unit 03 by the electric current of detection first node 1 or Section Point 2 and draw U2 U1, detecting control unit 03 control ends the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3, and make the second metal-oxide-semiconductor Q2 conducting, at this moment V_out is powered by battery Battery.When equipment does not meet battery Battery and inserts the DC power supply (not plugging process), detect control unit 03 by the electric current of detection first node 1 or Section Point 2 and draw U1 U2, detecting control unit 03 control ends the second metal-oxide-semiconductor Q2, and make the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3 conducting, at this moment V_out is powered by the DC power supply.When meeting battery Battery and insert the DC power supply, equipment (the plug process is not arranged, insert the DC power supply suddenly) time, the DC power supply at first passes through the parasitic diode conducting of the first metal-oxide-semiconductor Q1, this moment, the second metal-oxide-semiconductor Q2 and the 3rd metal-oxide-semiconductor Q3 ended, V_out is output not, and after detection control unit 03 detected the input of DC power supply, control ended the second metal-oxide-semiconductor Q2, and making the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3 conducting, V_out is powered by the DC power supply; Because in the plug process, the DC power supply is not to output to V_out immediately, but time-delay is arranged, control and make the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3 conducting by detecting control unit 03, be equivalent to play cushioning effect, effectively prevented the influence of hot plug to load, so support Power Supply Hot Swap.When DC power supply and battery Battery all insert (not plugging process), detect control unit 03 and detect the DC power supply and insert, control ends the second metal-oxide-semiconductor Q2, and makes the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3 conducting, and V_out is powered by DC power supply Battery.DC power supply and battery Battery all insert, and when alternating current disconnects suddenly, because the second metal-oxide-semiconductor Q2 has a parasitic diode, disconnect moment suddenly at alternating current, and V_out is by the parasitic diode power supply of battery Battery by the second metal-oxide-semiconductor Q2; Then detect control unit 03 and detect the disconnection of DC power supply, control makes the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3 is ended, and make the second metal-oxide-semiconductor Q2 conducting, because the conduction impedance when the parasitic diode impedance of the second metal-oxide-semiconductor Q2 is higher than the second metal-oxide-semiconductor Q2 conducting, this moment V_out by battery Battery through the second metal-oxide-semiconductor Q2 power (without the parasitic diode of the second metal-oxide-semiconductor Q2).DC power supply and battery Battery all insert, and when battery Battery disconnected suddenly, system was failure to actuate, and continue to keep V_out to be powered by the DC power supply.When the DC power supply is powered, insert battery Battery suddenly, system is failure to actuate, and continues to keep V_out to be powered by the DC power supply.
Certainly, under the certain situation of this second embodiment, for example: when detecting control unit 03 and can detect the device of voltage for the MCU of band AD or other, at this moment first node 1 and Section Point 2 short circuits, detect 03 magnitude of voltage that needs to detect first node 1 or Section Point 2 of control unit, and draw DC power supply or battery Battery power supply according to this magnitude of voltage, and then carry out the corresponding metal-oxide-semiconductor of concrete control by still conducting.What deserves to be mentioned is that under the certain situation of this second embodiment, the position of above-mentioned DC power supply and battery Battery is interchangeable.When the DC power supply is when importing from device external, then need to support the hot plug function of this DC power supply, then adopt the scheme of this second embodiment, if the DC power supply is to import from device interior, be that the DC power supply is when having device interior to convert, then both can have adopted scheme among first embodiment also can adopt scheme among second embodiment.In the prior art, when the AC/DC power module during external or external AC adapter, the input of DC power supply needs hot plug, use double diode can not support the requirement of Power Supply Hot Swap, therefore, need to increase extra Power Supply Hot Swap circuit, among this second embodiment, be connected by 01 negative electrode that the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3 and both parasitic diodes are set in first power supply unit, when DC power supply during in hot plug, control and make the first metal-oxide-semiconductor Q1 and the 3rd metal-oxide-semiconductor Q3 conducting by detecting control unit 03, played cushioning effect, effectively prevent the influence of hot plug to load, supported the hot plug function of power supply.
In a word, in the above-described embodiments, detecting control unit 03 mainly is the break-make that detects voltage and the above-mentioned first metal-oxide-semiconductor Q1 of control or the second metal-oxide-semiconductor Q2 or the 3rd metal-oxide-semiconductor, it can be made of chip or the discrete device of MCU or corresponding function, and V_out is that battery Battery or DC power supply are exported to power devices.If detecting control unit 03 is made of current sense device, then need first resistance R 1 among Fig. 2 and Fig. 3, if detecting control unit 03 is made of voltage detection device: can detect the device of voltage as the MCU of band AD or other, then first resistance R 1 among Fig. 2 and Fig. 3 can be removed, directly with first node 1 and Section Point 2 short circuits.Above-described embodiment employing metal-oxide-semiconductor is realized the switching between the power supply, mainly contain following advantage: the conducting resistance during the MOS conducting is less, for example: the conducting maximum resistance during the SI7619DN conducting is 0.021 Ω, for general Medical Devices, when continuous current is 3A or 4A, the power consumption of metal-oxide-semiconductor is 0.084W, and so little power consumption is very little to the battery flying power influence of general patient monitor, so the flying power of battery is better; For MOS, less than the power consumption of 0.1W, adopt natural heat dissipation to get final product, do not need other radiation fin, so reduced system bulk, reduced cost; The power consumption of metal-oxide-semiconductor autophage is less, can ignore for the thermal design of system, and it has reduced the design difficulty of system.In a second embodiment, owing to increased by the 3rd metal-oxide-semiconductor Q3, played cushioning effect, so support Power Supply Hot Swap.Simultaneously, according to the needs of actual conditions, can select corresponding metal-oxide-semiconductor and corresponding protection circuit.
The above embodiment has only expressed several execution mode of the present utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model claim.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the utility model design, can also make some distortion and improvement, these all belong to protection range of the present utility model.Therefore, the protection range of the utility model patent should be as the criterion with claims.
Claims (10)
1. power transfer device, it is characterized in that, comprise first power supply unit and second power supply unit, described first power supply unit comprises first power supply and first switch, described second power supply unit comprises second source and second switch, and described first power supply is connected with load with second switch by described first switch respectively with second source; Also comprise for detection of the curtage of first node or Section Point in described first power supply unit and the detection control unit controlling described first switch or second switch conducting or end according to detected value; Described first switch is connected with load with an input of described detection control unit respectively through described first node, described second switch is connected with described load, and described second switch also is connected with another input of described detection control unit through described Section Point.
2. power transfer device according to claim 1 is characterized in that, described first power supply is DC power supply or battery, and described second source is battery or DC power supply.
3. power transfer device according to claim 2 is characterized in that, described DC power source voltage is greater than the voltage of described battery.
4. power transfer device according to claim 3 is characterized in that, described first switch is first metal-oxide-semiconductor, and described second switch is second metal-oxide-semiconductor; The drain electrode of described first metal-oxide-semiconductor is connected with the output of described DC power supply, and grid is connected with an output of described detection control unit, and source electrode is connected with load with an input of described detection control unit respectively through described first node; The drain electrode of described second metal-oxide-semiconductor is connected with the positive pole of described power supply, grid is connected with another output of described detection control unit, source electrode is connected with described load, it also is connected described first node and Section Point short circuit through described Section Point with another input of described detection control unit.
5. power transfer device according to claim 4 is characterized in that, described first power supply unit also comprises first resistance that is arranged between described first node and the Section Point.
6. according to claim 4 or 5 described power transfer devices, it is characterized in that, described first power supply unit also comprises the 3rd metal-oxide-semiconductor, the grid of described the 3rd metal-oxide-semiconductor is connected with an output of described detection control unit, source electrode is connected with another input of described detection control unit through described Section Point, and drain electrode is connected with described load.
7. according to claim 4 or 5 described power transfer devices, it is characterized in that, described first power supply unit also comprises second resistance and second electric capacity, described second resistance is attempted by between the grid and source electrode of described first metal-oxide-semiconductor, and described second electric capacity is attempted by between the grid and source electrode of described second metal-oxide-semiconductor.
8. power transfer device according to claim 7 is characterized in that, described first power supply unit also comprises first electric capacity and the 3rd resistance, and described first electric capacity is in parallel with described second resistance, and described the 3rd resistance is in parallel with described second electric capacity.
9. power transfer device according to claim 8 is characterized in that, described first metal-oxide-semiconductor, second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor are all the P channel MOS tube that has parasitic diode.
10. power transfer device according to claim 9 is characterized in that, described DC power supply is to be converted to by internal or external AC/DC power module or AC adapter by alternating current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220715555 CN203151203U (en) | 2012-12-21 | 2012-12-21 | Power supply switching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220715555 CN203151203U (en) | 2012-12-21 | 2012-12-21 | Power supply switching device |
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| CN203151203U true CN203151203U (en) | 2013-08-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220715555 Expired - Lifetime CN203151203U (en) | 2012-12-21 | 2012-12-21 | Power supply switching device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356988A (en) * | 2016-10-09 | 2017-01-25 | 珠海市杰理科技有限公司 | Power switching and controlling circuit |
| TWI616050B (en) * | 2017-05-19 | 2018-02-21 | 碩天科技股份有限公司 | Power supply system |
| WO2018076794A1 (en) * | 2016-10-25 | 2018-05-03 | 宁德时代新能源科技股份有限公司 | Redundant backup control circuit of battery management system |
| CN109525033A (en) * | 2018-11-29 | 2019-03-26 | 威创集团股份有限公司 | Power supply circuit, method and low-power projection device |
-
2012
- 2012-12-21 CN CN 201220715555 patent/CN203151203U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356988A (en) * | 2016-10-09 | 2017-01-25 | 珠海市杰理科技有限公司 | Power switching and controlling circuit |
| CN106356988B (en) * | 2016-10-09 | 2019-01-15 | 珠海市杰理科技股份有限公司 | Power supply control switching circuit |
| WO2018076794A1 (en) * | 2016-10-25 | 2018-05-03 | 宁德时代新能源科技股份有限公司 | Redundant backup control circuit of battery management system |
| TWI616050B (en) * | 2017-05-19 | 2018-02-21 | 碩天科技股份有限公司 | Power supply system |
| CN109525033A (en) * | 2018-11-29 | 2019-03-26 | 威创集团股份有限公司 | Power supply circuit, method and low-power projection device |
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