CN203134816U - Crystal silicon solar energy cell - Google Patents
Crystal silicon solar energy cell Download PDFInfo
- Publication number
- CN203134816U CN203134816U CN2013200209836U CN201320020983U CN203134816U CN 203134816 U CN203134816 U CN 203134816U CN 2013200209836 U CN2013200209836 U CN 2013200209836U CN 201320020983 U CN201320020983 U CN 201320020983U CN 203134816 U CN203134816 U CN 203134816U
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- grid line
- grid lines
- negative electrode
- back side
- hole
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a crystal silicon solar energy cell; front side electric conduction grid lines of the cell are connected with backside negative electrode grid lines through electricity conducting through holes; the front side electric conduction grid line is formed by arranging sub-patterns of a plurality of units; the sub-pattern comprises a plurality of branch grid lines, frame grid lines surrounding the branch grid lines, the electric conducting through hole positioned in a center of the sub-pattern and porefilling grid lines gathering the plurality of branch grid lines to the electric conducting through hole; and the branch grid lines are symmetrically and regularly arranged in parallel, two ends of the branch grid line are respectively connected on the porefilling grid lines and the frame grid lines, so more charge carrier are accumulated on the front side of the cell and flow to the backside electrode through the electric conducting through hole, thereby improving efficiency of a cell sheet. Backside positive electrode grid lines and the backside negative electrode grid lines are in a discontinuous or continous line type in parallel arrangement, and are symmetrically arranged around a cell sheet central line; one end of the backside positive electrode grid line moves upwards and then bends to a backside negative electrode grid line direction, so welding by a single linear welding band is conveniently realized, thereby reducing packaging cost.
Description
Technical field
The utility model relates to field of solar thermal power generation, particularly a kind of crystal silicon MWT solar cell.
Background technology
The solar cell generating is a kind of reproducible environmental protection generation mode, can not produce carbon dioxide isothermal chamber gas in the power generation process, can not pollute environment.Solar-energy photo-voltaic cell is usually with crystalline silicon or thin-film material manufacturing, and the former is obtained by the method for cutting, ingot casting or forging, and the latter is that thin film is attached on the backing at a low price.Market produces and the solar-energy photo-voltaic cell great majority of use are made of crystalline silicon material.Such solar cell is known in the prior art.Solar cell is tabular usually and has front and back.In use, obvert incident (sun) light.Therefore, the front also is designed to collect sunlight and reflection as few as possible.Most important parameter is conversion efficiency for solar cell, the scheme that improves solar battery efficiency is a lot, and at present mainly by following several classes: back side emitter structure (as the IBC battery), emitter region break-through battery (EWT battery), some contact battery (PCC battery), metal piercing twine (MWT) or becket around battery (MWA) etc.; Wherein relatively simple with MWT solar cell making flow process, making flow process with respect to the conventional crystal silicon solar cell has only increased extra laser drilling and hole insulation twice processing step, unimodule specification requirement height, need be to accurately aiming between back side opposing electrode point and the metal forming, technical difficulty is big, and realization means complexity can't be carried out by hand, so cost is very high, become an important technology difficult point that limits its development.
The utility model content
The technical problems to be solved in the utility model is to improve the quantity of gathering of charge carrier of battery sheet sensitive surface and the efficient of confluxing, realize interconnection and traditional solar components welding procedure compatibility of the electrode of crystal silicon MWT solar cell, reduce MWT battery component packaging cost, accelerate the industrialization of MWT battery.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of crystal silicon solar batteries comprises conductive through hole, positive conduction grid line, back side negative electrode grid line, back side positive electrode grid line.Positive conduction grid line is connected to back side negative electrode grid line by the conductive through hole of solar cell, front lead grid line is arranged by the sub pattern of a plurality of unit and is formed, sub pattern comprises many grid lines, surround the frame grid lines of a grid line, be positioned at sub pattern the center conductive through hole and will many prop up grid lines and conflux to the filling perforation grid line of conductive through hole, the two ends of filling perforation grid line are connected respectively to corresponding frame grid line, prop up the parallel symmetrical distribution of grid line rule, one end is connected to the filling perforation grid line, and the other end is connected to the frame grid line.
The sectional drawing of described conductive through hole is shaped as cylindrical or truncated cone-shaped, equidistantly is arranged in the front surface of battery on single direction.Preferred spread pattern is a kind of in 3 * 3,3 * 4,3 * 5,3 * 6,4 * 4,4 * 5,4 * 6.
Preferably, the width of sub pattern filling perforation grid line outwards narrows down gradually from conductive through hole, and conductive through hole place width is 0.1-0.3mm, and the narrowest place of end width is 0.02-0.07mm.
Preferably, to prop up the angle of grid line and filling perforation grid line be 45 to sub pattern
Preferably, described back side positive electrode grid line is discontinuous or continous way line style, is symmetrically distributed with battery sheet center line, is arranged in parallel with back side negative electrode grid line, one end of the back side positive electrode grid line translation 2-10mm that makes progress is again to back side negative electrode grid line direction bending 2-10mm.
Preferably, be provided with isolation channel around the negative electrode grid line of the back side, described isolation channel is 0.1-4mm apart from the close Edge Distance of negative electrode grid line, and groove width is 0.1-3mm.
Preferably, the width of other grid lines except the filling perforation grid line is identical, is 0.02-0.08mm.
Preferably, the width of described positive electrode grid line and negative electrode grid line is 1-2mm, between spacing be 1-5mm.
The beneficial effect that the utility model is realized is: by equidistantly being divided into a plurality of sub pattern at the front gate line of battery sheet according to the number of conductive through hole, and the filling perforation grid line of conductive through hole is passed in setting, and two ends are connected to the grid line on filling perforation grid line and the frame grid line, and the multi-charge charge carrier accumulates in battery front side and flows to backplate by conductive through hole thereby make more.The outside bending of an end by back side positive electrode grid line, make the negative electrode grid line on the interconnection direction, be positioned on the straight line with back side positive electrode grid line, thereby realized when carrying out battery sheet series welding, can use single straight wire bonding band easily to realize being welded to back side negative electrode from the back side positive electrode of battery sheet, or be welded to back side positive electrode from the back side negative electrode of battery sheet, reduce MWT battery component packaging cost, accelerate the industrialization of MWT battery.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is the pattern of the embodiment of the positive conduction of crystal silicon solar batteries of the present utility model grid line;
Fig. 2 is the sub pattern of the positive conduction of the crystal silicon solar batteries grid line of the utility model embodiment;
Fig. 3 is the pattern of the crystal silicon solar batteries back side conduction grid line of the utility model embodiment;
Fig. 4 is the partial enlarged drawing of the crystal silicon solar batteries back side positive electrode grid line end bending of the utility model embodiment;
In the accompanying drawing: 1. conductive through hole, the positive conduction of 1-1. grid line, 2. filling perforation grid line, 3. a grid line, 4. back side negative electrode grid line, 5. back side positive electrode grid line, 6. isolation channel, 10. frame grid line.
Embodiment
By reference to the accompanying drawings the utility model is described in further detail now.These accompanying drawings are the schematic diagram of simplification, basic structure of the present utility model only is described in a schematic way, so it only show the formation relevant with the utility model.
Accompanying drawing 1～4th, most preferred embodiment of the present utility model, adopting the length of side is the solar cell of 156mm * 156mm, and adopting silicon substrate is the P type, and P type substrate front side spreads the N-type emitter layer that is processed to form opposite types, perhaps adopt the N-type substrate, diffusion will form P type emission basic unit.
Conductive through hole 1 distributes with 3 * 3 forms, adopt the moulding of punching on the laser means silicon substrate, cross sectional shape is cylindrical, pore size is 0.3mm, and the pattern of positive conduction grid line 1-1 is by constituting by 3 * 3 sub pattern of arranging, and the boundary of sub pattern arranges straight line frame grid line 10, the frame grid line at battery chamfering place is parallel with the frame line of battery, in the single sub pattern, two filling perforation grid lines 2 are that intersection point is vertical mutually with conductive through hole 1, and two ends are connected to frame grid line 10.Some sub pattern is propped up grid line 3 regular parallel symmetrical distributions, one end is connected to filling perforation grid line 2, one end is connected to frame grid line 10, the angle that props up grid line 3 and filling perforation grid line 2 is 45 °, and the width of filling perforation grid line 2 narrows down gradually from conductive through hole 1 outward direction, thereby forms the distribution of star, conductive through hole place width is 0.15mm, the narrowest place of end width is 0.05mm, and the width of other grid lines except the filling perforation grid line is identical, is 0.05mm.
Back side positive electrode grid line 5 is the continous way line style, be symmetrically distributed with battery sheet center line, be arranged in parallel with back side negative electrode grid line 4, the translation that makes progress of one end of back side positive electrode grid line 5, again to the 4 direction bendings of back side negative electrode grid line, the width of positive electrode grid line 5 and negative electrode grid line 4 is 2mm, between spacing be 3mm.
Be provided with isolation channel 6 around the negative electrode grid line of the back side, isolation channel 6 is 1mm apart from the close Edge Distance of negative electrode grid line, and groove width is 0.3mm, groove depth 0.01mm.
Make the method for above-mentioned crystal silicon solar batteries, include following steps:
At first on substrate, carry out laser drilling, carry out the battery blade technolgy again: making herbs into wool, spread, go PSG, PECVD, silk screen printing, sintering, laser to isolate.Described silk-screen printing technique step is: 1. simultaneously printed back positive electrode grid line 5 and back side negative electrode grid line 4; 2. printed back electric field; 3. print filling perforation grid line 2 and a grid line 3 simultaneously.
This crystal silicon MWT solar cell is carried out the method for series welding, the multi-disc battery is equidistantly placed along the direction of back side grid line, the end bending part of the back side positive electrode grid line 5 of a slice after negative electrode grid line 4 ends, the back side of a slice are soldered in the past with the generic linear welding, welding covers bending and negative electrode grid line 4.Negative pole welding in the front-end and back-end of entire cell string is drawn from negative electrode grid line 4, and anodal welding is drawn from the end bending part of back side positive electrode grid line, links to each other with the respective electrode of next battery strings, thereby finishes the welding of whole solar panel.
Be enlightenment with above-mentioned foundation desirable embodiment of the present utility model, by above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this utility model technological thought.The technical scope of this utility model is not limited to the content on the specification, must determine its technical scope according to the claim scope.
Claims (7)
1. crystal silicon solar batteries, comprise conductive through hole (1), battery front side conduction grid line (1-1), back side negative electrode grid line (4), back side positive electrode grid line (5), positive conduction grid line (1-1) is connected to back side negative electrode grid line (4) by conductive through hole (1), described front lead grid line (1-1) is arranged by the sub pattern of a plurality of unit and is formed, it is characterized in that described sub pattern comprises many grid lines (3), surround the frame grid line (10) of a grid line, be positioned at the conductive through hole (1) of the center of sub pattern and prop up grid lines with many and conflux to the filling perforation grid line (2) of conductive through hole, the two ends of described filling perforation grid line (2) are connected respectively to corresponding frame grid line (10), the regular parallel symmetrical distribution of described grid line (3), one end is connected to filling perforation grid line (2), and the other end is connected to frame grid line (10).
2. according to the described crystal silicon solar batteries of claim 1, the sectional drawing that it is characterized in that described conductive through hole (1) is shaped as cylindrical or truncated cone-shaped, equidistantly be arranged in the front surface of battery on single direction, spread pattern is a kind of in 3 * 3,3 * 4,3 * 5,3 * 6,4 * 4,4 * 5,4 * 6.
3. according to the described crystal silicon solar batteries of claim 1, it is characterized in that the width of filling perforation grid line (2) narrows down gradually from conductive through hole (1) outward direction, conductive through hole place width is 0.1-0.3 mm, and the narrowest place of end width is 0.02-0.07 mm.
4. according to the described crystal silicon solar batteries of claim 1, it is characterized in that it is the 45o angle that sub pattern is propped up the angle of grid line (3) and filling perforation grid line (2).
5. according to the described crystal silicon solar batteries of claim 1, it is characterized in that described back side positive electrode grid line (5) and back side negative electrode grid line (4) discontinuous or the continous way line style for being arranged in parallel, be symmetrically distributed with battery sheet center line, one end of back side positive electrode grid line (5) the translation 2-10 mm that makes progress is again to back side negative electrode grid line (4) direction bending 2-10mm.
6. according to the described crystal silicon solar batteries of claim 1, it is characterized in that back side negative electrode grid line (4) is provided with isolation channel (6) on every side, described isolation channel (6) is 0.1-4 mm apart from the close Edge Distance of negative electrode grid line (4), and groove width is 0.1-3 mm.
7. according to the described crystal silicon solar batteries of claim 1, the width that it is characterized in that other grid lines except filling perforation grid line (2) is identical, be 0.02-0.08 mm, the width of described positive electrode grid line (5) and negative electrode grid line (4) is 1-2mm, between spacing be 1-5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013200209836U CN203134816U (en) | 2013-01-15 | 2013-01-15 | Crystal silicon solar energy cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013200209836U CN203134816U (en) | 2013-01-15 | 2013-01-15 | Crystal silicon solar energy cell |
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| Publication Number | Publication Date |
|---|---|
| CN203134816U true CN203134816U (en) | 2013-08-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013200209836U Withdrawn - After Issue CN203134816U (en) | 2013-01-15 | 2013-01-15 | Crystal silicon solar energy cell |
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| Country | Link |
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| CN (1) | CN203134816U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103107211A (en) * | 2013-01-15 | 2013-05-15 | 常州亿晶光电科技有限公司 | Crystalline silicon solar cell and manufacture method thereof |
-
2013
- 2013-01-15 CN CN2013200209836U patent/CN203134816U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103107211A (en) * | 2013-01-15 | 2013-05-15 | 常州亿晶光电科技有限公司 | Crystalline silicon solar cell and manufacture method thereof |
| CN103107211B (en) * | 2013-01-15 | 2015-08-12 | 常州亿晶光电科技有限公司 | A kind of crystal silicon solar batteries and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130814 Effective date of abandoning: 20150812 |
|
| RGAV | Abandon patent right to avoid regrant |