CN203119853U - Output short-circuit protection circuit of circuit taking MOS (metal oxide semiconductor) tube as low-end switch - Google Patents
Output short-circuit protection circuit of circuit taking MOS (metal oxide semiconductor) tube as low-end switch Download PDFInfo
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- CN203119853U CN203119853U CN 201320142052 CN201320142052U CN203119853U CN 203119853 U CN203119853 U CN 203119853U CN 201320142052 CN201320142052 CN 201320142052 CN 201320142052 U CN201320142052 U CN 201320142052U CN 203119853 U CN203119853 U CN 203119853U
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Abstract
The utility model discloses an output short-circuit protection circuit of a circuit taking an MOS (metal oxide semiconductor) tube as a low-end switch. The output short-circuit protection circuit comprises a second resistor R2, a third resistor R3, a first triode T1, a second triode T2 and a capacitor C1, one end of the capacitor C1 is grounded while the other end of the same is connected with one ends of the second resistor R2 and the third resistor R3 respectively, the other end of the second resistor R2 is connected with an input end, the other end of the third resistor R3 is connected to a base of the first triode T1, a collector of the first triode T1 is connected to a grid of the MOS tube Q1, the collector of the second triode T2 is connected to an emitter of the first triode T1, a base of the second triode T2 is connected to a drain of the MOS tube Q1, and an emitter of the second triode T2 is connected to a source of the MOS tube Q1. The protection circuit is formed through the triodes, the resistors and the capacitor, so that cost is low; and when short-circuit of an output end reaches a power source, the MOS tube is closed, so that the MOS tube is avoided being burnt.
Description
Technical field
The application relates to the circuit protection technical field, and relating in particular to a kind of is the output short circuit protection circuit of the circuit of low-end switch with the metal-oxide-semiconductor.
Background technology
Be in the circuit of low-end switch with common field effect transistor (metal-oxide-semiconductor), as shown in Figure 1, when metal-oxide-semiconductor Q1 opens, conducting, internal resistance are very little between source electrode and the drain electrode, if this moment, the drain short circuit as output arrived power supply, electric current between the source-drain electrode will rise to higher value moment, cause metal-oxide-semiconductor Q1 to burn.Though adopt the metal-oxide-semiconductor of intelligent band protection to avoid burning phenomenon by short-circuit protection, cost is too high.
The utility model content
In view of this, it is the output short circuit protection circuit of the circuit of low-end switch with the metal-oxide-semiconductor that the application's purpose is to provide a kind of, when guaranteeing under prerequisite cheaply, solving output to be shorted to power supply, and the problem of being burnt as the metal-oxide-semiconductor of low-end switch.
For achieving the above object, the application provides following technical scheme:
A kind of is the output short circuit protection circuit of the circuit of low-end switch with the metal-oxide-semiconductor, and described is that the circuit of low-end switch comprises first resistance R 1 and metal-oxide-semiconductor Q1 with the metal-oxide-semiconductor; One end of described first resistance R 1 is connected with the grid of described metal-oxide-semiconductor Q1, and the other end of described first resistance R 1 is as input; The drain electrode of described metal-oxide-semiconductor Q1 is as output, and is connected the source ground of described metal-oxide-semiconductor Q1 with power supply;
Described output short circuit protection circuit comprises second resistance R 2, the 3rd resistance R 3, the first triode T1, the second triode T2 and capacitor C 1; One end ground connection of described capacitor C 1, the other end are connected with an end of described second resistance R 2 and the 3rd resistance R 3 respectively; The other end of described second resistance R 2 is connected with described input, and the other end of described the 3rd resistance R 3 is connected to the base stage of the described first triode T1, and the collector electrode of the described first triode T1 is connected to the grid of described metal-oxide-semiconductor Q1; The collector electrode of the described second triode T2 is connected to the emitter of the described first triode T1; The base stage of the described second triode T2 is connected to the drain electrode of described metal-oxide-semiconductor Q1; The emitter of the described second triode T2 is connected to the source electrode of described metal-oxide-semiconductor Q1.
Preferably, described output short circuit protection circuit also comprises the 4th resistance R 4, the 5th resistance R 5 and the 6th resistance R 6; Between the drain electrode of described the 4th resistance R 4 and the described metal-oxide-semiconductor Q1 of the 6th resistance R 6 series connection accesses and the base stage of the described second triode T2; Between the source electrode of described the 5th resistance R 5 and the described metal-oxide-semiconductor Q1 of the 6th resistance R 6 series connection accesses and the base stage of the described second triode T2.
From above-mentioned technical scheme as can be seen, the application forms protective circuit by triode, resistance and electric capacity, access is in the circuit of low-end switch with the metal-oxide-semiconductor, when having realized that output is shorted to power supply, to close as the metal-oxide-semiconductor of low-end switch, avoid metal-oxide-semiconductor to be burnt, realized the short-circuit protection to metal-oxide-semiconductor; Simultaneously, discrete elements such as above-mentioned triode, resistance are with low cost, are easy to the realization of circuit.Therefore, the embodiment of the present application has solved prior art problems.
Description of drawings
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiment of the application, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is for being the circuit structure diagram of low-end switch with the metal-oxide-semiconductor in the prior art;
What Fig. 2 provided for the embodiment of the present application one is the structure chart of output short circuit protection circuit of the circuit of low-end switch with the metal-oxide-semiconductor;
What Fig. 3 provided for the embodiment of the present application two is the structure chart of output short circuit protection circuit of the circuit of low-end switch with the metal-oxide-semiconductor.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present application, the technical scheme in the embodiment of the present application is clearly and completely described, obviously, described embodiment only is the application's part embodiment, rather than whole embodiment.Based on the embodiment among the application, those of ordinary skills are not making the every other embodiment that obtains under the creative work prerequisite, all belong to the scope of the application's protection.
It is the output short circuit protection circuit of the circuit of low-end switch with the metal-oxide-semiconductor that the embodiment of the present application discloses a kind of, when guaranteeing under prerequisite cheaply, solving output to be shorted to power supply, and the problem of being burnt as the metal-oxide-semiconductor of low-end switch.
It is the circuit of low-end switch that the embodiment of the present application one is applied to the metal-oxide-semiconductor.With reference to Fig. 2, should be that the circuit of low-end switch comprises first resistance R 1 and metal-oxide-semiconductor Q1 with the metal-oxide-semiconductor.Wherein, an end of first resistance R 1 is connected with the grid of metal-oxide-semiconductor Q1, and the other end of first resistance R 1 be the input of the circuit of low-end switch as being somebody's turn to do with the metal-oxide-semiconductor; The drain electrode of metal-oxide-semiconductor Q1 is as output, and is connected the source ground of metal-oxide-semiconductor Q1 with power supply.
As shown in Figure 2, what the embodiment of the present application one provided is the output short circuit protection circuit of the circuit of low-end switch with the metal-oxide-semiconductor, is made up of second resistance R 2, the 3rd resistance R 3, the first triode T1, the second triode T2 and capacitor C 1.Wherein, an end ground connection of capacitor C 1, the other end is connected with the end of second resistance R 2 with the 3rd resistance R 3 respectively; The other end of second resistance R 2 is connected with above-mentioned input, and the other end of the 3rd resistance R 3 is connected to the base stage of the first triode T1, and the collector electrode of the first triode T1 is connected to the grid of metal-oxide-semiconductor Q1; The collector electrode of the second triode T2 is connected to the emitter of the first triode T1; The base stage of the described second triode T2 is connected to the drain electrode of described metal-oxide-semiconductor Q1; The emitter of the second triode T2 is connected to the source electrode of metal-oxide-semiconductor Q1.
The described circuit working principle of above-described embodiment is as follows:
Before circuit powered on, the first triode T1 closed, capacitor C is 1 uncharged, metal-oxide-semiconductor Q1 closes, and its drain electrode is high level, the voltage U between source electrode and the drain electrode
Q1Put between the base stage and emitter of the second triode T2, make conducting between the base stage of the second triode T2 and the emitter, namely circuit not under the operating state the second triode T2 be in opening.
After normally powering on, the input input high level, the grid voltage of metal-oxide-semiconductor Q1 is drawn high thereupon, and metal-oxide-semiconductor Q1 opens, and drain voltage (being output voltage) reduces, U
Q1Can not reach the basic emitter-base bandgap grading cut-in voltage (decided by the second triode T2 self parameter, be generally 0.7V) of the second triode T2, the second triode T2 closes.Simultaneously, capacitor C 1 is by 2 chargings of second resistance R, and the voltage at capacitor C 1 two ends raises, and the basic emitter voltage of the first triode T1 also increases, when the basic emitter voltage of the first triode T1 was increased to the basic emitter-base bandgap grading cut-in voltage of the first triode T1, the first triode T1 opened.Because the time delay that capacitor C 1 charging causes, when the first triode T1 opens, the second triode T2 closes, so the first triode T1 and the second triode T2 can not open simultaneously, can not form current path between the first triode T1 and the second triode T2, the grid voltage of metal-oxide-semiconductor Q1 can not dragged down, and metal-oxide-semiconductor Q1 can be held open state.
Under the metal-oxide-semiconductor Q1 opening, its source-drain electrode voltage U
Q1=I
Q1* R
Q1(I
Q1Be the source-drain electrode conducting electric current of metal-oxide-semiconductor Q1, R
Q1Be the source-drain electrode internal resistance), i.e. the base stage of the second triode T2 and the voltage U between the emitter
T2=U
R5=I
Q1* R
Q1U
T2=U
R5=I
Q1*R
Q1*(R5/(R4+R5))
When the output (being the drain electrode of metal-oxide-semiconductor Q1) of circuit when being shorted to power supply, the source-drain electrode electric current I of metal-oxide-semiconductor Q1
Q1Sharply increase U
T2Increase to the basic emitter-base bandgap grading cut-in voltage of (surpassing) second triode T2, the second triode T2 opens thereupon; Because this moment, the first triode T1 also was in opening, so the grid of metal-oxide-semiconductor Q1 passes through the first triode T1 and the second triode T2 ground connection, namely the grid of metal-oxide-semiconductor Q1 and source voltage are almost nil, and metal-oxide-semiconductor Q1 closes, I
Q1Disappear thereupon, avoided metal-oxide-semiconductor Q1 to be burnt.After metal-oxide-semiconductor Q1 closes, circuit is in self-locking state, have only the output of eliminating short trouble, close input, just can make each element of circuit reset (the first triode T1 closes, the second triode T2 opens, capacitor C 1 uncharged), and then re-power, metal-oxide-semiconductor Q1 opens, circuit recovers operate as normal.
By foregoing circuit structure and the course of work as can be known, the embodiment of the present application is formed protective circuit by triode, resistance and electric capacity, when having realized that output is shorted to power supply, will close as the metal-oxide-semiconductor of low-end switch, avoid metal-oxide-semiconductor to be burnt, realized the short-circuit protection to metal-oxide-semiconductor; Simultaneously, discrete elements such as above-mentioned triode, resistance are with low cost, are easy to the realization of circuit.Therefore, the embodiment of the present application has solved prior art problems.
It is the circuit of low-end switch that the embodiment of the present application two is applied to the metal-oxide-semiconductor.With reference to Fig. 3, should be that the circuit of low-end switch comprises first resistance R 1 and metal-oxide-semiconductor metal-oxide-semiconductor Q1 with the metal-oxide-semiconductor.Wherein, an end of first resistance R 1 is connected with the grid of metal-oxide-semiconductor Q1, and the other end of first resistance R 1 be the input of the circuit of low-end switch as being somebody's turn to do with the metal-oxide-semiconductor; The drain electrode of metal-oxide-semiconductor Q1 is as output, and is connected the source ground of metal-oxide-semiconductor Q1 with power supply.
As shown in Figure 3; what the embodiment of the present application two provided is the output short circuit protection circuit of the circuit of low-end switch with the metal-oxide-semiconductor, is made up of second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the first triode T1, the second triode T2 and capacitor C 1.Wherein, an end ground connection of capacitor C 1, the other end is connected with the end of second resistance R 2 with the 3rd resistance R 3 respectively; The other end of second resistance R 2 is connected with above-mentioned input, the other end of the 3rd resistance R 3 is connected to the base stage of the first triode T1, the collector electrode of the first triode T1 is connected to the grid of metal-oxide-semiconductor Q1, and the emitter of the first triode T1 is connected to the collector electrode of the second triode T2.Between the drain electrode of the 4th resistance R 4 and the 6th resistance R 6 series connection access metal-oxide-semiconductor Q1 and the base stage of the second triode T2, between the source electrode of the 5th resistance R 5 and the 6th resistance R 6 series connection access metal-oxide-semiconductor Q1 and the base stage of the second triode T2, that is: one of the 4th resistance R 4 drain electrode that is terminated at metal-oxide-semiconductor Q1, the other end is connected with an end of the 5th resistance R 5 and an end of the 6th resistance R 6 respectively; The other end of the 5th resistance R 5 is connected to the source electrode of metal-oxide-semiconductor Q1; The other end of the 6th resistance R 6 is connected to the base stage of the second triode T2.
The described circuit working principle of above-described embodiment is as follows:
Before circuit powers on; the first triode T1 closes; capacitor C 1 is uncharged; metal-oxide-semiconductor Q1 closes; its drain electrode is high level; the 4th resistance R 4 and the 5th resistance R 5 series voltages are equivalent to supply voltage VBAT; the dividing potential drop of the 5th resistance R 5 puts on that (the 6th resistance R 6 is the current-limiting resistance of the second triode T2 between the base stage and emitter of the second triode T2; the second triode T2 is shielded; for simplifying operation principle; the dividing potential drop of ignoring the 6th resistance R 6 is below described); make conducting between the base stage of the second triode T2 and the emitter, namely circuit not under the operating state the second triode T2 be in opening.
After normally powering on, the input input high level, the grid voltage of metal-oxide-semiconductor Q1 is drawn high thereupon, metal-oxide-semiconductor Q1 opens, drain voltage (being output voltage) reduces, the dividing potential drop of the 5th resistance R 5 can not reach the basic emitter-base bandgap grading cut-in voltage (decided by the second triode T2 self parameter, be generally 0.7V) of the second triode T2, and the second triode T2 closes.Simultaneously, capacitor C 1 is by 2 chargings of second resistance R, and the voltage at capacitor C 1 two ends raises, and the basic emitter voltage of the first triode T1 also increases, when the basic emitter voltage of the first triode T1 was increased to the basic emitter-base bandgap grading cut-in voltage of the first triode T1, the first triode T1 opened.Because the time delay that capacitor C 1 charging causes, when the first triode T1 opens, the second triode T2 closes, so the first triode T1 and the second triode T2 can not open simultaneously, can not form current path between the first triode T1 and the second triode T2, the grid voltage of metal-oxide-semiconductor Q1 can not dragged down, and metal-oxide-semiconductor Q1 can be held open state.
Under the metal-oxide-semiconductor Q1 opening, its source-drain electrode voltage U
Q1=I
Q1* R
Q1(I
Q1Be the source-drain electrode conducting electric current of metal-oxide-semiconductor Q1, R
Q1Be the source-drain electrode internal resistance); The base stage of the second triode T2 and the voltage U between the emitter
T2=U
R5=I
Q1* R
Q1* (R5/ (R4+R5)).
When the output (being the drain electrode of metal-oxide-semiconductor Q1) of circuit when being shorted to power supply, the source-drain electrode electric current I of metal-oxide-semiconductor Q1
Q1Sharply increase U
T2Increase to the basic emitter-base bandgap grading cut-in voltage of (surpassing) second triode T2, the second triode T2 opens thereupon; Because this moment, the first triode T1 also was in opening, so the grid of metal-oxide-semiconductor Q1 passes through the first triode T1 and the second triode T2 ground connection, namely the grid of metal-oxide-semiconductor Q1 and source voltage are almost nil, and metal-oxide-semiconductor Q1 closes, I
Q1Disappear thereupon, avoided metal-oxide-semiconductor Q1 to be burnt.After metal-oxide-semiconductor Q1 closes, circuit is in self-locking state, have only the output of eliminating short trouble, close input, just can make each element of circuit reset (the first triode T1 closes, the second triode T2 opens, capacitor C 1 uncharged), and then re-power, metal-oxide-semiconductor Q1 opens, circuit recovers operate as normal.
By foregoing circuit structure and the course of work as can be known, the embodiment of the present application, will be closed as the metal-oxide-semiconductor of low-end switch when having realized that output is shorted to power supply by two triodes, four resistance and an electric capacity, avoid metal-oxide-semiconductor to be burnt, realized the short-circuit protection to metal-oxide-semiconductor; Simultaneously, discrete elements such as above-mentioned triode, resistance are with low cost, are easy to the realization of circuit.
In addition, the short circuit current difference that can bear of the metal-oxide-semiconductor of different capacity.By relational expression U
T2=U
R5=I
Q1* R
Q1* (R5/ (R4+R5)) by regulating the relative size of the 4th resistance R 4 and the 5th resistance R 5, regulates the limit value of short circuit current as can be known, namely controls I when metal-oxide-semiconductor Q1 closes under the short-circuit conditions
Q1Size, adapting to the metal-oxide-semiconductor of different capacity, the metal-oxide-semiconductor that has overcome intelligent band protection in the prior art can not be used for the drawback of the very big circuit of power output.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the application.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and defined General Principle can realize under the situation of the spirit or scope that do not break away from the application in other embodiments herein.Therefore, the application will can not be restricted to these embodiment shown in this article, but will meet the wideest scope consistent with principle disclosed herein and features of novelty.
Claims (2)
1. one kind is the output short circuit protection circuit of the circuit of low-end switch with the metal-oxide-semiconductor, it is characterized in that, described is that the circuit of low-end switch comprises first resistance R 1 and metal-oxide-semiconductor Q1 with the metal-oxide-semiconductor; One end of described first resistance R 1 is connected with the grid of described metal-oxide-semiconductor Q1, and the other end of described first resistance R 1 is as input; The drain electrode of described metal-oxide-semiconductor Q1 is as output, and is connected the source ground of described metal-oxide-semiconductor Q1 with power supply;
Described output short circuit protection circuit comprises second resistance R 2, the 3rd resistance R 3, the first triode T1, the second triode T2 and capacitor C 1; One end ground connection of described capacitor C 1, the other end are connected with an end of described second resistance R 2 and the 3rd resistance R 3 respectively; The other end of described second resistance R 2 is connected with described input, and the other end of described the 3rd resistance R 3 is connected to the base stage of the described first triode T1, and the collector electrode of the described first triode T1 is connected to the grid of described metal-oxide-semiconductor Q1; The collector electrode of the described second triode T2 is connected to the emitter of the described first triode T1; The base stage of the described second triode T2 is connected to the drain electrode of described metal-oxide-semiconductor Q1; The emitter of the described second triode T2 is connected to the source electrode of described metal-oxide-semiconductor Q1.
2. output short circuit protection circuit according to claim 1 is characterized in that, described output short circuit protection circuit also comprises the 4th resistance R 4, the 5th resistance R 5 and the 6th resistance R 6; Between the drain electrode of described the 4th resistance R 4 and the described metal-oxide-semiconductor Q1 of the 6th resistance R 6 series connection accesses and the base stage of the described second triode T2; Between the source electrode of described the 5th resistance R 5 and the described metal-oxide-semiconductor Q1 of the 6th resistance R 6 series connection accesses and the base stage of the described second triode T2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320142052 CN203119853U (en) | 2013-03-26 | 2013-03-26 | Output short-circuit protection circuit of circuit taking MOS (metal oxide semiconductor) tube as low-end switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320142052 CN203119853U (en) | 2013-03-26 | 2013-03-26 | Output short-circuit protection circuit of circuit taking MOS (metal oxide semiconductor) tube as low-end switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203119853U true CN203119853U (en) | 2013-08-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320142052 Expired - Lifetime CN203119853U (en) | 2013-03-26 | 2013-03-26 | Output short-circuit protection circuit of circuit taking MOS (metal oxide semiconductor) tube as low-end switch |
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| CN (1) | CN203119853U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110308756A (en) * | 2018-03-27 | 2019-10-08 | 艾普凌科有限公司 | Voltage regulator |
| CN111712015A (en) * | 2019-03-18 | 2020-09-25 | 精工爱普生株式会社 | Light emission control device, light source device, and projection type image display device |
-
2013
- 2013-03-26 CN CN 201320142052 patent/CN203119853U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110308756A (en) * | 2018-03-27 | 2019-10-08 | 艾普凌科有限公司 | Voltage regulator |
| CN110308756B (en) * | 2018-03-27 | 2022-03-01 | 艾普凌科有限公司 | Voltage regulator |
| CN111712015A (en) * | 2019-03-18 | 2020-09-25 | 精工爱普生株式会社 | Light emission control device, light source device, and projection type image display device |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
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| CP03 | Change of name, title or address |
Address after: 4 / F, building 1, No.14 Jiuxianqiao Road, Chaoyang District, Beijing 100020 Patentee after: Beijing Jingwei Hengrun Technology Co.,Ltd. Address before: 100101 Beijing city Chaoyang District Anxiang Beili 11 B block 8 layer Patentee before: Beijing Jingwei HiRain Technologies Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130807 |