CN203119455U - Insulated gate bipolar transistor (IGBT) overcurrent locking protecting circuit - Google Patents
Insulated gate bipolar transistor (IGBT) overcurrent locking protecting circuit Download PDFInfo
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- CN203119455U CN203119455U CN 201320110193 CN201320110193U CN203119455U CN 203119455 U CN203119455 U CN 203119455U CN 201320110193 CN201320110193 CN 201320110193 CN 201320110193 U CN201320110193 U CN 201320110193U CN 203119455 U CN203119455 U CN 203119455U
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Abstract
An insulated gate bipolar transistor (IGBT) overcurrent locking protecting circuit comprises an overcurrent signal checking-in unit, an overcurrent checking-in processing unit, an overcurrent checking-out processing unit, a pulse-width modulation (PWM) controlling unit, a feedback locking unit, a power supply unit and a power processing unit, wherein the overcurrent checking-in processing unit and the overcurrent checking-out processing unit are sequentially connected with the overcurrent signal checking-in unit, the PWM controlling unit, the feedback locking unit, the power supply unit and the power processing unit are connected with the overcurrent checking-out processing unit. The IGBT overcurrent locking protecting circuit is characterized in that one end of the feedback locking unit is connected with an output end of the overcurrent checking-out processing unit, and the other end of the feedback locking unit is connected with the overcurrent checking-in processing unit. The power supply unit is respectively connected with the overcurrent checking-in processing unit, the power processing unit and the overcurrent checking-out processing unit, and an output end of the power processing unit is connected with an overcurrent checking-out unit.
Description
Technical field
The utility model relates to electricity field, particularly a kind of IGBT overcurrent locking protection circuit.
Background technology
Growing along with electronic switch power, the power of power supply is done increasingly, IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor arises at the historic moment, in the application of Switching Power Supply, requirement is monitored the saturation conduction pressure drop of IGBT, in the time of the IGBT overcurrent, be flow through in the device greater than the electric current of rated value the time, the component pipe core junction temperature is raise, cause device to burn out, this just requires power supply will make reaction rapidly, cut off the work of main circuit, cause more serious loss in order to avoid IGBT damages.Conventional method is to lock protection with the special-purpose chip that latchs, and price compares higher.A low cost of specialized designs, the overcurrent locking protection circuit that reaction speed is fast.
The utility model content
For solving the problems of the technologies described above, it is a kind of simple in structure that the purpose of this utility model is to provide, the IGBT overcurrent locking protection circuit that reaction speed is fast.
For achieving the above object; a kind of IGBT overcurrent locking protection circuit of the utility model; it comprises over-current signal check-in unit; the overcurrent check-in processing unit and the overcurrent that link to each other successively with described over-current signal check-in unit detect processing unit; and the described overcurrent of connection detects the PWM control unit of processing unit; the feedback lock cell; power subsystem and the processing unit that powers on; it is characterized in that: an end of described feedback lock cell connects described overcurrent and detects the processing unit output; its other end links to each other with described overcurrent check-in processing unit; described power subsystem and described overcurrent check-in processing unit; the processing unit that powers on detects processing unit with overcurrent and links to each other respectively, and the output of the described processing unit that powers on connects described overcurrent and detects the unit.
Preferred on the basis of such scheme, described overcurrent check-in processing unit comprises resistance R 1, the inverter and the resistance R 3 that are connected with described resistance R 1, the input of described resistance R 1 links to each other with described over-current signal check-in unit, the input of described resistance R 3 links to each other with described power subsystem, and the output of inverter detects processing unit with described overcurrent and links to each other.
Preferred on the basis of such scheme, described feedback lock cell comprises resistance R 2, and described resistance R 2 links to each other with the output of described inverter.
Preferred on the basis of such scheme, described feedback lock cell also comprises first diode, and an end of described first diode links to each other with the input of described inverter, and its other end detects processing unit with described overcurrent and links to each other.
Preferred on the basis of such scheme, the described processing unit that powers on comprises second diode, the electric capacity that is connected with described diode and resistance R 4, described second diode links to each other with the output of described resistance R 2, one end of described resistance R 4 links to each other with described power subsystem, its other end connects the output of described second diode, the output head grounding of described electric capacity.
Preferred on the basis of such scheme, described power supply is the 5V DC power supply.
The utility model compared with prior art; its beneficial effect is: adopted the overcurrent lock cell by the utility model; when detecting over-current signal; can force the PWM control unit in off position locked; guarantee IGBT overcurrent protection reliability; the utility model is simple in structure simultaneously, can reduce and produce old.
Description of drawings
Fig. 1 is the circuit diagram of a kind of IGBT overcurrent locking protection circuit of the present utility model;
Fig. 2 is the calcspar of a kind of IGBT overcurrent locking protection circuit of the present utility model.
Embodiment
By the technology contents, the structural feature that describe the utility model in detail, reached purpose and effect, below exemplify embodiment and conjunction with figs. now and know clearly and give explanation.
See also Fig. 1 to shown in Figure 2; the utility model provides a kind of IGBT overcurrent locking protection circuit; the overcurrent check-in processing unit 20 that it comprises over-current signal check-in unit 10, link to each other successively with described over-current signal check-in unit 10 and overcurrent detect processing unit 40, and are connected PWM control unit 70 that described overcurrent detects processing unit 40, feed back lock cell 30, power subsystem 60 and the processing unit 50 that powers on, wherein:
Described overcurrent check-in processing unit 20 comprises resistance R 1, the inverter and the resistance R 3 that are connected with described resistance R 1, the input of described resistance R 1 links to each other with described over-current signal check-in unit 10, the input of described resistance R 3 links to each other with described power subsystem 60, and the output of this inverter detects processing unit 40 with described overcurrent and links to each other.
Described overcurrent detects processing unit 40 and comprises one first inverter, and described first inverter can be thought series connection for the odd number inverter.As preferred version of the present utility model, preferred one of described first inverter.
One end of described feedback lock cell 30 connects described overcurrent and detects processing unit 40 outputs, its other end links to each other with described overcurrent check-in processing unit 20, and this feedback lock cell 30 comprises the firstth diode, one end of described first diode links to each other with the input of described inverter, and its other end detects processing unit 40 with described overcurrent and links to each other.As a kind of preferred version of the present utility model, described feedback lock cell 30 also comprises a resistance R 2, and described resistance R 2 one ends link to each other with the output of described inverter, and its other end connects the input that described overcurrent detects first inverter of processing unit 40.
Described power subsystem 60 detects processing unit 40 with overcurrent and links to each other respectively with described overcurrent check-in processing unit 20, the processing unit 50 that powers on, and the described output that powers on processing unit 50 connects described overcurrent and detects the unit.Wherein said power subsystem 60 preferred 5V DC power supply.
This processing unit 50 that powers on comprises second diode, the electric capacity and the resistance R 4 that are connected with described second diode, described second diode links to each other with the output of described resistance R 2, one end of described resistance R 4 links to each other with described power subsystem 60, its other end connects the output of described second diode, the output head grounding of described electric capacity.
During work; when overcurrent appears in IGBT; the 10 meeting inputs of over-current signal check-in unit can be sent the low level signal of 10mS time and be come; the input level that causes overcurrent to detect the inverter of processing unit 40 transfers low level to; this low level signal its output after inverter is anti-phase becomes high level; the overcurrent input that detects output unit is also forced to draw and is high level like this; after second inverter that detects output unit is anti-phase, become low level; be delivered to PWM control unit 70; allow the pwm chip positive closing; simultaneously by the first diode D1; the input of working as of first inverter is also forced to drag down level; the output of first inverter also is high level always; the input of second inverter also can continue high level always; the output of nature second inverter can be low level also always, thereby pressure is locked in off position down the pressure of PWM chip, has reached the effect of protection IGBT.In this case, have only behind the dump, it is normal that this locked circuit just can recover.In this process, the resistance R 1 of described electric current check-in processing unit mainly is that inverter provides a bias voltage, the capacitor C 1 of the described processing unit 50 that powers on mainly is at power supply power supply initial stage stabling current, by second diodes force pressure of first inverter is moved to low level simultaneously.
In sum, only be the preferred embodiment of the utility model, do not limit protection range of the present utility model with this, all equivalences of doing according to the utility model claim and description change and modify, and are all within the scope that the utility model patent contains.
Claims (6)
1. IGBT overcurrent locking protection circuit; it comprises over-current signal check-in unit; the overcurrent check-in processing unit and the overcurrent that link to each other successively with described over-current signal check-in unit detect processing unit; and the described overcurrent of connection detects the PWM control unit of processing unit; the feedback lock cell; power subsystem and the processing unit that powers on; it is characterized in that: an end of described feedback lock cell connects described overcurrent and detects the processing unit output; its other end links to each other with described overcurrent check-in processing unit; described power subsystem and described overcurrent check-in processing unit; the processing unit that powers on detects processing unit with overcurrent and links to each other respectively, and the output of the described processing unit that powers on connects described overcurrent and detects the unit.
2. IGBT overcurrent locking protection circuit according to claim 1; it is characterized in that: described overcurrent check-in processing unit comprises resistance R 1, the inverter and the resistance R 3 that are connected with described resistance R 1; the input of described resistance R 1 links to each other with described over-current signal check-in unit; the input of described resistance R 3 links to each other with described power subsystem, and the output of inverter detects processing unit with described overcurrent and links to each other.
3. as IGBT overcurrent locking protection circuit as described in the claim 2, it is characterized in that: described feedback lock cell comprises a resistance R 2, and described resistance R 2 links to each other with the output of described inverter.
4. as IGBT overcurrent locking protection circuit as described in the claim 3; it is characterized in that: described feedback lock cell also comprises first diode; one end of described first diode links to each other with the input of described inverter, and its other end detects processing unit with described overcurrent and links to each other.
5. as IGBT overcurrent locking protection circuit as described in the claim 3; it is characterized in that: the described processing unit that powers on comprises second diode, the electric capacity that is connected with described diode and resistance R 4; described second diode links to each other with the output of described resistance R 2; one end of described resistance R 4 links to each other with described power subsystem; its other end connects the output of described second diode, the output head grounding of described electric capacity.
6. IGBT overcurrent locking protection circuit according to claim 1, it is characterized in that: described power supply is the 5V DC power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320110193 CN203119455U (en) | 2013-03-12 | 2013-03-12 | Insulated gate bipolar transistor (IGBT) overcurrent locking protecting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320110193 CN203119455U (en) | 2013-03-12 | 2013-03-12 | Insulated gate bipolar transistor (IGBT) overcurrent locking protecting circuit |
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| Publication Number | Publication Date |
|---|---|
| CN203119455U true CN203119455U (en) | 2013-08-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320110193 Expired - Fee Related CN203119455U (en) | 2013-03-12 | 2013-03-12 | Insulated gate bipolar transistor (IGBT) overcurrent locking protecting circuit |
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| CN (1) | CN203119455U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103219706A (en) * | 2013-03-28 | 2013-07-24 | 深圳市安众电气有限公司 | IGBT (Insulated Gate Bipolar Transistor) over-current lock-in protection circuit |
-
2013
- 2013-03-12 CN CN 201320110193 patent/CN203119455U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103219706A (en) * | 2013-03-28 | 2013-07-24 | 深圳市安众电气有限公司 | IGBT (Insulated Gate Bipolar Transistor) over-current lock-in protection circuit |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130807 Termination date: 20140312 |