CN203116851U - Improved photosensitive sensor circuit - Google Patents

Improved photosensitive sensor circuit Download PDF

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Publication number
CN203116851U
CN203116851U CN 201320171220 CN201320171220U CN203116851U CN 203116851 U CN203116851 U CN 203116851U CN 201320171220 CN201320171220 CN 201320171220 CN 201320171220 U CN201320171220 U CN 201320171220U CN 203116851 U CN203116851 U CN 203116851U
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China
Prior art keywords
resistance
operational amplifier
pin
integrated operational
electrically connected
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Expired - Fee Related
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CN 201320171220
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Chinese (zh)
Inventor
钱培玉
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JIAXING YINGLI ELECTRONIC TECHNOLOGY Co Ltd
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JIAXING YINGLI ELECTRONIC TECHNOLOGY Co Ltd
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Priority to CN 201320171220 priority Critical patent/CN203116851U/en
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Abstract

The utility model relates to an improved photosensitive sensor circuit. The improved photosensitive sensor circuit comprises an acquisition module, a processing module and an output module; the acquisition module is a photoresistor (RG1); the processing module comprises an integrated operational amplifier (U1), an adjustable resistor (RP1), a resistor (R4), a resistor (R5) and a resistor (R6); and the output module comprises a resistor (R1), a resistor (R2), a resistor (R3), a triode (Q1), a light emitting diode (LED1) and an output end (P1). According to a principle that a resistance value of the photoresistor varies according to changes of illumination, the utility model sets up the improved photosensitive sensor circuit which is simple and reasonable and has wide application and adjustable sensitivity.

Description

A kind of improved light sensor circuit
Technical field
The utility model relates to a kind of improved light sensor circuit.
Background technology
Photoresistance is to utilize the incident of light to cause that the variation of semiconductor resistor carries out work.The principle of work of photoresistance is based on photoconductive effect: when unglazed the photograph, photoresistance has very high resistance; When illumination is arranged, when photoelectronic energy greater than the material energy gap, transit to conduction band after the Electron absorption photon energy in the valence band, inspire the electron-hole pair that can conduct electricity, resistance is reduced, light is stronger, the electron-hole pair that inspires is more many, and resistance value is more low; After illumination stops, free electron and hole-recombination, conductive capability descends, and resistance recovers initial value.Therefore can utilize the principle of photoresistance to build a kind of improved light sensor circuit, to realize detection or the opto-electronic conversion to light.But different application scenarios needs no sensitivity, if adopt the resistance of fixed resistance value in the reference voltage branch road, its luminous sensitivity is fixed, and can't satisfy the user of different occasion demands, has certain limitation.
The utility model content
The utility model has been built a kind of advantages of simple according to the resistance of photoresistance according to the principle that the variation of illumination changes, and is widely used and improved light sensor circuit that sensitivity is adjustable.
The utility model is achieved through the following technical solutions:
A kind of improved light sensor circuit, comprise acquisition module, processing module and output module, described acquisition module is a photoresistance (RG1), described processing module comprises integrated operational amplifier (U1), adjustable resistance (RP1), resistance (R4), resistance (R5) and resistance (R6), described resistance (R4) is connected between first pin and tripod of described integrated operational amplifier (U1), described photoresistance (RG1) two ends are electrically connected with tripod and the 4th pin of described integrated operational amplifier (U1) respectively, the two ends of described resistance (R6) are electrically connected with crus secunda and the 4th pin of integrated operational amplifier (U1) respectively, the two ends of described adjustable resistance (RP1) are electrically connected with the 5th pin and the crus secunda of integrated operational amplifier (U1) respectively, the two ends of described resistance (R5) are electrically connected with the 5th pin and the tripod of integrated operational amplifier (U1) respectively, described output module comprises resistance (R1), resistance (R2), resistance (R3), triode (Q1), light emitting diode (LED1) and output terminal (P1), described resistance (R3) end is electrically connected with first pin of described integrated operational amplifier (U1), the other end is electrically connected with the base stage of triode (Q1), the collector of described triode (Q1) respectively with described resistance (R2), the negative pole of light emitting diode (LED1) and output terminal (P1) are electrically connected, the positive pole of described light emitting diode (LED1) is electrically connected with resistance (R1), the 4th pin ground connection of the emitter of described triode (Q1) and integrated operational amplifier (U1), the 5th pin of described integrated operational amplifier (U1), a wherein termination power of resistance (R1) and resistance (R2).
The resistance of described resistance (R1), resistance (R2) and resistance (R3) is 1K.
The resistance of described resistance (R4) is 1M.
The resistance of described resistance (R5) is 47K.
The resistance of described resistance (R6) is 22K.
The beneficial effect that the utility model brings is:
In the utility model, described improved light sensor circuit design advantages of simple, the intensity of illumination of accepting when photoresistance (RG1) are during less than preset threshold, and triode (Q1) is in cut-off state, and 2 pin of output terminal (P1) are output as high level; The intensity of illumination of accepting when photoresistance (RG1) is during greater than the threshold values set, and triode (Q1) is in conducting state, and 2 pin of output terminal (P1) are output as low level.By such opto-electronic conversion, can realize the detection to illumination, or realize the control to some external circuit; By regulating adjustable resistance (RP1), can change this circuit to the sensitivity of illumination in addition, be applicable to different application scenarios, improve utilization factor greatly.
Description of drawings
Below in conjunction with accompanying drawing the utility model is described in further detail.
Fig. 1 is the circuit diagram of improved light sensor circuit described in the utility model.
Embodiment
Below in conjunction with drawings and Examples the utility model is described in further detail:
As improved light sensor embodiment of circuit described in the utility model, as shown in Figure 1, comprise acquisition module, processing module and output module, described acquisition module is a photoresistance (RG1), described processing module comprises integrated operational amplifier (U1), adjustable resistance (RP1), resistance (R4), resistance (R5) and resistance (R6), described resistance (R4) is connected between first pin and tripod of described integrated operational amplifier (U1), described photoresistance (RG1) two ends are electrically connected with tripod and the 4th pin of described integrated operational amplifier (U1) respectively, the two ends of described resistance (R6) are electrically connected with crus secunda and the 4th pin of integrated operational amplifier (U1) respectively, the two ends of described adjustable resistance (RP1) are electrically connected with the 5th pin and the crus secunda of integrated operational amplifier (U1) respectively, the two ends of described resistance (R5) are electrically connected with the 5th pin and the tripod of integrated operational amplifier (U1) respectively, described output module comprises resistance (R1), resistance (R2), resistance (R3), triode (Q1), light emitting diode (LED1) and output terminal (P1), described resistance (R3) end is electrically connected with first pin of described integrated operational amplifier (U1), the other end is electrically connected with the base stage of triode (Q1), the collector of described triode (Q1) respectively with described resistance (R2), the negative pole of light emitting diode (LED1) and output terminal (P1) are electrically connected, the positive pole of described light emitting diode (LED1) is electrically connected with resistance (R1), the 4th pin ground connection of the emitter of described triode (Q1) and integrated operational amplifier (U1), the 5th pin of described integrated operational amplifier (U1), a wherein termination power of resistance (R1) and resistance (R2).The intensity of illumination of accepting when photoresistance (RG1) is during less than preset threshold, and triode (Q1) is in cut-off state, and 2 pin of output terminal (P1) are output as high level; The intensity of illumination of accepting when photoresistance (RG1) is during greater than the threshold values set, and triode (Q1) is in conducting state, and 2 pin of output terminal (P1) are output as low level.By such opto-electronic conversion, can realize the detection to illumination, or realize the control to some external circuit.By regulating adjustable resistance (RP1), can change this circuit to the sensitivity of illumination in addition, be applicable to different application scenarios, improve utilization factor greatly.
In the present embodiment, the resistance of described resistance (R1), resistance (R2) and resistance (R3) is 1K.
In the present embodiment, the resistance of described resistance (R4) is 1M.
In the present embodiment, the resistance of described resistance (R5) is 47K.
In the present embodiment, the resistance of described resistance (R6) is 22K.

Claims (5)

1. improved light sensor circuit, it is characterized in that comprising acquisition module, processing module and output module, described acquisition module is a photoresistance (RG1), described processing module comprises integrated operational amplifier (U1), adjustable resistance (RP1), resistance (R4), resistance (R5) and resistance (R6), described resistance (R4) is connected between first pin and tripod of described integrated operational amplifier (U1), described photoresistance (RG1) two ends are electrically connected with tripod and the 4th pin of described integrated operational amplifier (U1) respectively, the two ends of described resistance (R6) are electrically connected with crus secunda and the 4th pin of integrated operational amplifier (U1) respectively, the two ends of described adjustable resistance (RP1) are electrically connected with the 5th pin and the crus secunda of integrated operational amplifier (U1) respectively, the two ends of described resistance (R5) are electrically connected with the 5th pin and the tripod of integrated operational amplifier (U1) respectively, described output module comprises resistance (R1), resistance (R2), resistance (R3), triode (Q1), light emitting diode (LED1) and output terminal (P1), described resistance (R3) end is electrically connected with first pin of described integrated operational amplifier (U1), the other end is electrically connected with the base stage of triode (Q1), the collector of described triode (Q1) respectively with described resistance (R2), the negative pole of light emitting diode (LED1) and output terminal (P1) are electrically connected, the positive pole of described light emitting diode (LED1) is electrically connected with resistance (R1), the 4th pin ground connection of the emitter of described triode (Q1) and integrated operational amplifier (U1), the 5th pin of described integrated operational amplifier (U1), a wherein termination power of resistance (R1) and resistance (R2).
2. improved light sensor circuit as claimed in claim 1 is characterized in that the resistance of described resistance (R1), resistance (R2) and resistance (R3) is 1K.
3. improved light sensor circuit as claimed in claim 1, the resistance that it is characterized in that described resistance (R4) is 1M.
4. improved light sensor circuit as claimed in claim 1, the resistance that it is characterized in that described resistance (R5) is 47K.
5. improved light sensor circuit as claimed in claim 1, the resistance that it is characterized in that described resistance (R6) is 22K.
CN 201320171220 2013-03-28 2013-03-28 Improved photosensitive sensor circuit Expired - Fee Related CN203116851U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201320171220 CN203116851U (en) 2013-03-28 2013-03-28 Improved photosensitive sensor circuit

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Application Number Priority Date Filing Date Title
CN 201320171220 CN203116851U (en) 2013-03-28 2013-03-28 Improved photosensitive sensor circuit

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CN203116851U true CN203116851U (en) 2013-08-07

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103674241A (en) * 2013-12-14 2014-03-26 成都国蓉科技有限公司 Photosensitive circuit for detecting photosensitive signal
CN104374472A (en) * 2014-10-28 2015-02-25 何林 Ambient light illumination detecting device
WO2020107417A1 (en) * 2018-11-26 2020-06-04 郑娜薇 Warning circuit based on photoelectric sensing
CN112618377A (en) * 2021-01-05 2021-04-09 北京麦康医疗器械有限公司 Infusion pipeline blockage and bubble detection device of enteral nutrition pump

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103674241A (en) * 2013-12-14 2014-03-26 成都国蓉科技有限公司 Photosensitive circuit for detecting photosensitive signal
CN104374472A (en) * 2014-10-28 2015-02-25 何林 Ambient light illumination detecting device
WO2020107417A1 (en) * 2018-11-26 2020-06-04 郑娜薇 Warning circuit based on photoelectric sensing
CN112618377A (en) * 2021-01-05 2021-04-09 北京麦康医疗器械有限公司 Infusion pipeline blockage and bubble detection device of enteral nutrition pump

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GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130807

Termination date: 20140328