CN203103283U - Novel MOS tube - Google Patents
Novel MOS tube Download PDFInfo
- Publication number
- CN203103283U CN203103283U CN 201220638272 CN201220638272U CN203103283U CN 203103283 U CN203103283 U CN 203103283U CN 201220638272 CN201220638272 CN 201220638272 CN 201220638272 U CN201220638272 U CN 201220638272U CN 203103283 U CN203103283 U CN 203103283U
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- oxide
- metal
- pin
- semiconductor
- mos tube
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Abstract
The utility model provides a novel MOS tube. A tube pin of the novel MOS tube employs a bending pin structure and is an R-shaped bending structure. During welding, the MOS tube must be perpendicular to a PCB board; preferably, a distance from the R-shaped bending tube pin to the PCB board remains 6.5mm; during production, a dimension of the R-shaped bending tube pin is controlled in a range from 6.0mm to 7.0mm. The novel MOS tube is advantaged in that the MOS tube employs the R-shaped bending structure, has a function of vibration and impact buffering and improves vibration resistance capability and impact resistance capability of products.
Description
Technical field
The utility model relates to all electronic product fields, is meant a kind of metal-oxide-semiconductor clubfoot structure especially.
Background technology
Common on the market inverter is attached to metal-oxide-semiconductor on the shell and dispels the heat, because fit is unreasonable, in the mechanical oscillation process, or in the mechanical shock process, produced relative secondary vibration between PCBA and the shell, the metal-oxide-semiconductor pin is fractureed, and cause the inverter disabler.
In view of above problem, a kind of new invention effective, metal-oxide-semiconductor that properties of product are high is imperative.
The utility model content
The technical problems to be solved in the utility model is: have the pin structure of metal-oxide-semiconductor on the market now, can not satisfy the practical set demand.
For solving above technical problem, the utility model provides a kind of metal-oxide-semiconductor R type bent angle structure, it is by this kind metal-oxide-semiconductor R type clubfoot structure, prolong the active force time, and then played the effect of buffering vibration and impact. avoided inverter inside when secondary vibration, the metal-oxide-semiconductor pin is because of stressed excessive, and the phenomenon of generation fracture.
That is: the utility model structure is to come specific implementation by the following technical programs:
A kind of Novel MOS tube, it adopts R type clubfoot structure, and it comprises the mechanism that can be used for buffering vibration and impact.Because momentum is relevant with active force with the time, under the certain situation of momentum, time and active force are inversely proportional to, and the time is long more, and active force is more little on the contrary.The metal-oxide-semiconductor of this kind R type bent angle structure has used this kind principle exactly, by the increase time, comes mitigation power, and then makes metal-oxide-semiconductor pin root stressed less, avoids the metal-oxide-semiconductor pin to rupture under violent vibration condition, causes the unusual phenomenon of power supply function.
That is, a kind of pin of its metal-oxide-semiconductor of Novel MOS tube adopts the clubfoot structure, is the shape of R type bending.
When the welding metal-oxide-semiconductor, metal-oxide-semiconductor is pcb board vertically, and the crooked pin of preferred R type remains on the size of 6.5mm to the distance of pcb board.
The crooked pin of described R type is controlled between the 6.0mm-7.0mm when producing.
The beneficial effects of the utility model are: the metal-oxide-semiconductor pin adopts the structure of R type bent angle, plays the effect of buffering vibration and impact, has strengthened the antivibration ability of product and has impacted anti-stress.
Description of drawings
To the description of embodiment of the present utility model, can further understand its practical novel purpose, specific structural features and advantage by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 is a metal-oxide-semiconductor R type clubfoot structural representation for the utility model;
Embodiment
The utility model is on the new Passat of Shanghai Volkswagen, the pure sine wave inverter of use and custom-designed.The utility model metal-oxide-semiconductor, the pin of its metal-oxide-semiconductor adopts the clubfoot structure, is the shape of R type bending.Be that pin with prior art is the metal-oxide-semiconductor of straight type, carry out shaping, make pin become the shape of R type bending, strengthen the anti-stress performance of self by a cover tool fixture.
The utility model has well solved metal-oxide-semiconductor and shell sticks together when assembling, and the metal-oxide-semiconductor pin that causes fracture.Certainly, every other electronic elements similar to the metal-oxide-semiconductor pin configuration all can use this structure, as long as the electronic element model is changed or transformed, therefore, the technical scheme of every and this structure similar is all in the protection range of this patent.
With reference to being illustrated in figure 1 as metal-oxide-semiconductor R type bent angle structural representation, concrete method carried out therewith is: the metal-oxide-semiconductor that has R type bent angle structure 10 is welded on the pcb board, when the welding metal-oxide-semiconductor, metal-oxide-semiconductor is pcb board vertically, must guarantee the size of 6.5mm among Fig. 1 at the new Passat of Shanghai Volkswagen, when producing, generally be controlled between the 6.0mm-7.0mm.Simultaneously, this R type bent angle structure 10 can not be inserted in the pcb board hole, after above problem is controlled well, could guarantee that metal-oxide-semiconductor and PCB assembling is good.Prevent that when secondary vibration the risk of fracture takes place the metal-oxide-semiconductor pin.Certainly, if at the size of 6.5mm among other products Fig. 1, and the size of the 6.0mm-7.0mm when producing, can different sizes be arranged according to different product, do not repeat them here.
The description of above preferred embodiment makes those skilled in the art can make or use the utility model.The various modifications of these embodiment are conspicuous for a person skilled in the art, and Ding Yi General Principle can be applied among other embodiment and not deviate from spirit or scope of the present utility model here.Therefore, the embodiment that the utility model is not limited to illustrate here, and will meet and the principle and the novel feature the most wide in range consistent scope that disclose here.
Claims (1)
1. Novel MOS tube is characterized in that: the pin of its metal-oxide-semiconductor adopts the clubfoot structure, is the shape of R type bending.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220638272 CN203103283U (en) | 2012-11-28 | 2012-11-28 | Novel MOS tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220638272 CN203103283U (en) | 2012-11-28 | 2012-11-28 | Novel MOS tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203103283U true CN203103283U (en) | 2013-07-31 |
Family
ID=48854667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220638272 Expired - Lifetime CN203103283U (en) | 2012-11-28 | 2012-11-28 | Novel MOS tube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203103283U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108695288A (en) * | 2017-04-04 | 2018-10-23 | 丰田自动车株式会社 | Semiconductor devices and power converter |
-
2012
- 2012-11-28 CN CN 201220638272 patent/CN203103283U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108695288A (en) * | 2017-04-04 | 2018-10-23 | 丰田自动车株式会社 | Semiconductor devices and power converter |
| CN108695288B (en) * | 2017-04-04 | 2021-07-16 | 丰田自动车株式会社 | Semiconductor device and power converter |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130731 |