CN203086370U - Polysilicon reducing furnace high frequency heating power supply inversion main circuit - Google Patents
Polysilicon reducing furnace high frequency heating power supply inversion main circuit Download PDFInfo
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- CN203086370U CN203086370U CN 201320022678 CN201320022678U CN203086370U CN 203086370 U CN203086370 U CN 203086370U CN 201320022678 CN201320022678 CN 201320022678 CN 201320022678 U CN201320022678 U CN 201320022678U CN 203086370 U CN203086370 U CN 203086370U
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Abstract
The utility model relates to a polysilicon reducing furnace high frequency heating power supply inversion main circuit which comprises first and second inversion modules which are identical, a load and first and second capacitor groups. The first inversion module is formed by connecting first, second and third switch tube groups in parallel. The first capacitor group is connected in parallel with the third switch tube group. Each capacitor group comprises two capacitors. The midpoints of the first switch tube group and the third switch tube group are connected in series. The midpoint of the second switch tube group is connected with the midpoint of a fifth switch tube group. One end of the load is connected with the midpoint of the second switch tube group. The other end of the load is respectively connected with the midpoints of the two capacitor groups, and each switch tube is formed by splicing IGBT and a diode. The polysilicon reducing furnace high frequency heating power supply inversion main circuit provided by the utility model has the advantages that an IGBT high frequency inversion circuit is used; by using a skin effect, the magnitude and the frequency of the current flowing through a polysilicon rod are controlled according to the diameter size of the polysilicon rod, thus heating is carried out only on the surface of the polysilicon rod; the production power consumption is reduced; the temperature of a reducing furnace is reduced when the diameter of the polysilicon rod is large at the later production stage; and the power unit consumption of polysilicon reducing production is reduced.
Description
Technical field
The utility model relates to a kind of polycrystalline silicon reducing furnace high-frequency heating power inverter main circuit.
Technical background
The required polycrystalline silicon material most of employing " modified model Siemens reducing process " at present of photovoltaic generation is produced, and promptly adopts hydrogen as reducing agent, under 1100 ℃ ~ 1200 ℃ temperature, and reduction trichlorosilicane or silicon tetrachloride, deposition forms polycrystalline silicon rod.Along with the rising of temperature in the stove, the increase of silicon rod sectional area, the resistance of silicon rod constantly descends.And to keep the temperature of reduction reaction, must keep heating power constant.Therefore, must regulate according to the resistance value of silicon rod and be added in the silicon rod both end voltage.Externally power input is generally realized the adjusting of voltage by a plurality of windings of switching transformer output.Polycrystalline silicon rod is pure resistive load, but owing to adopt the frequency of more AC voltage adjusting heating system generally mostly to be 50Hz or 60Hz at present, make polycrystalline silicon rod in the process of heating, the silicon rod temperature inside is than the temperature height on silicon rod surface, along with the diameter of polycrystalline silicon rod is increasing, the difference of surface temperature and core temperature is increasing, after internal temperature reaches 1414 degree, to cause occurring the phenomenon that excellent core melts down, thereby limited the polycrystalline silicon rod diameter, limited the further raising of reduction furnace output, energy consumption is bigger.
The utility model content
The object of the present invention is to provide a kind of polycrystalline silicon reducing furnace high-frequency heating power inverter main circuit, solve the technical problem of the polycrystalline silicon rod surface and the core temperature difference.
Technical solutions of the utility model: a kind of polycrystalline silicon reducing furnace high-frequency heating power inverter main circuit, it is characterized in that comprising first, second inversion module, load, first, second capacitance group, described first inversion module is to be formed in parallel by first, second, third switching tube group, and described first capacitance group is in parallel with the 3rd switching tube group; Wherein, comprise 2 electric capacity in the capacitance group; The mid point of the first switching tube group, the 3rd switching tube group is connected in series mutually; Described second inversion module is to be formed in parallel by the 4th, the 5th, the 6th switching tube group, and described second capacitance group is in parallel with the 6th switching tube group; Wherein, comprise 2 electric capacity in the capacitance group; The mid point of the 4th switching tube group, the 6th switching tube group is connected in series mutually; Described second switch pipe class mid point links to each other with the 5th switching tube class mid point; One end of described load links to each other with second switch pipe class mid point, and the other end of described load links to each other with the mid point of two capacitance group respectively.
Described switching tube group is to be formed by two switching tubes serial connection, and described switching tube is by IGBT and diode and connects and form.
Advantage of the present utility model: adopt the IGBT high-frequency inverter circuit, utilize skin effect, diameter according to polycrystalline silicon rod, control is by the size of current and the frequency of polycrystalline silicon rod, only reach and heat on the polycrystalline silicon rod surface, reduce energy consumption, the temperature of the reduction furnace when being reduced in polycrystalline silicon rod production later stage major diameter simultaneously reduces the also power mono-consumption of original production of polysilicon.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Among the figure, 1 is the first switching tube group.
Embodiment
A kind of as shown in Figure 1 polycrystalline silicon reducing furnace high-frequency heating power inverter main circuit comprises first, second inversion module, load R, first, second capacitance group.
Described first inversion module is that first, second, third switching tube group is formed in parallel, and described first capacitance group is in parallel with the 3rd switching tube group; Wherein, comprise 2 electric capacity in the capacitance group; Mid point a, the c point of the first switching tube group, the 3rd switching tube group is serial connection mutually.
Described second inversion module is to be formed in parallel by the 4th, the 5th, the 6th switching tube group, and described second capacitance group is in parallel with the 6th switching tube group; Wherein, comprise 2 electric capacity in the capacitance group; Mid point d, the f of the 4th switching tube group, the 6th switching tube group are connected in series mutually; Described second switch pipe class mid point b links to each other with the 5th switching tube class mid point e; Described load R one end links to each other with second switch pipe class mid point b, and the other end of described load R links to each other with the mid point of two capacitance group respectively.
Described switching tube group is to be formed by two switching tubes serial connection, and described switching tube is by IGBT and diode and connects and form.
Operation principle
When being in the half-bridge mode of operation, when a brachium pontis of first inversion module go up pipe IGBT conducting the time, going up of another one brachium pontis managed also conducting of IGBT simultaneously, this moment, electric current flowed out from the anode of dc-link capacitance, manage IGBT by going up of two brachium pontis, flow into ohmic load R, enter the mid point h of dc-link capacitance group then.In the other moment, when the following pipe IGBT conducting of a brachium pontis of second inversion module, the following pipe IGBT conducting of another one brachium pontis simultaneously, this moment, electric current flowed out from the negative terminal of dc-link capacitance, by connecting the following pipe IGBT of a brachium pontis, flow into ohmic load, enter then the dc-link capacitance group mid point h.
As can be seen, under half-bridge mode, the IGBT quantity of conducting electric current has increased by one times from above analysis, therefore, under big electric current output operating mode, switches to the half-bridge mode of operation by full-bridge, can make that the output current ability under the phase homeomorphism heightens.Reduce the pressure of heat radiation.
Advantage of the present utility model: adopt the IGBT high-frequency inverter circuit, utilize skin effect, diameter according to polycrystalline silicon rod, control is by the size of current and the frequency of polycrystalline silicon rod, only reach and heat on the polycrystalline silicon rod surface, reduce energy consumption, the temperature of the reduction furnace when being reduced in polycrystalline silicon rod production later stage major diameter simultaneously reduces the also power mono-consumption of original production of polysilicon.
Claims (2)
1. polycrystalline silicon reducing furnace high-frequency heating power inverter main circuit, it is characterized in that comprising first, second inversion module, load, first, second capacitance group, described first inversion module is to be formed in parallel by first, second, third switching tube group, and described first capacitance group is in parallel with the 3rd switching tube group; Wherein, comprise 2 electric capacity in the capacitance group; The mid point of the first switching tube group, the 3rd switching tube group (a, c) point is connected in series mutually; Described second inversion module is to be formed in parallel by the 4th, the 5th, the 6th switching tube group, and described second capacitance group is in parallel with the 6th switching tube group; Wherein, comprise 2 electric capacity in the capacitance group; The mid point of the 4th switching tube group, the 6th switching tube group (d, f) is serial connection mutually; Described second switch pipe class mid point (b) links to each other with the 5th switching tube class mid point (e); One end of described load (R) links to each other with second switch pipe class mid point (b), and the other end of described load (R) links to each other with the mid point of two capacitance group respectively.
2. a kind of polycrystalline silicon reducing furnace high-frequency heating power inverter main circuit according to claim 1 is characterized in that described switching tube group is to be formed by two switching tubes serial connection, and described switching tube is by IGBT and diode and connects and form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320022678 CN203086370U (en) | 2013-01-17 | 2013-01-17 | Polysilicon reducing furnace high frequency heating power supply inversion main circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320022678 CN203086370U (en) | 2013-01-17 | 2013-01-17 | Polysilicon reducing furnace high frequency heating power supply inversion main circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203086370U true CN203086370U (en) | 2013-07-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320022678 Expired - Fee Related CN203086370U (en) | 2013-01-17 | 2013-01-17 | Polysilicon reducing furnace high frequency heating power supply inversion main circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN203086370U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103647460A (en) * | 2013-12-20 | 2014-03-19 | 内蒙古神舟硅业有限责任公司 | Implementation method for medium-frequency heating power supply of reduction furnace |
-
2013
- 2013-01-17 CN CN 201320022678 patent/CN203086370U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103647460A (en) * | 2013-12-20 | 2014-03-19 | 内蒙古神舟硅业有限责任公司 | Implementation method for medium-frequency heating power supply of reduction furnace |
| CN103647460B (en) * | 2013-12-20 | 2016-09-07 | 内蒙古神舟硅业有限责任公司 | A kind of implementation method of reduction furnace medium frequency heating power source |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130724 Termination date: 20180117 |