CN203071812U - Auxiliary booster circuit - Google Patents
Auxiliary booster circuit Download PDFInfo
- Publication number
- CN203071812U CN203071812U CN 201320025306 CN201320025306U CN203071812U CN 203071812 U CN203071812 U CN 203071812U CN 201320025306 CN201320025306 CN 201320025306 CN 201320025306 U CN201320025306 U CN 201320025306U CN 203071812 U CN203071812 U CN 203071812U
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- voltage
- booster circuit
- effect transistor
- field effect
- type field
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Abstract
An auxiliary booster circuit is characterized in that a grid electrode of a N type field effect transistor T1 is connected with a control terminal, a drain electrode is connected with a resistor R2 and a source electrode is connected with a resistor R1; the other end of the resistor R2 is connected with a resistor R3, an anode of a voltage-regulator tube D1, the anode of a diode D2 and the grid electrode of a P type field effect transistor T2; the other end of the resistor R3 is connected with an input terminal, a cathode of the voltage-regulator tube D1, the anode of a diode D3 and an input terminal IN of a booster circuit; the source electrode of the P type field effect transistor T2 is connected with the cathode of the diode D2 and a ground terminal GND of the booster circuit, and the drain electrode is connected with a resistor R4; The other ends of the resistors R1 and R4 are grounded; the cathode of the diode D3 is connected with an output terminal OUT of the booster circuit and the output terminal. After accessing to the auxiliary booster circuit, a voltage of the ground terminal of any booster circuit firstly rises to the high voltage and then boost is performed on the input voltage. Because the ground terminal voltage is in a high electric potential, the output voltage after the boost is higher than the output voltage of the booster circuit.
Description
Technical field
The utility model relates to the circuit that a kind of auxiliary traditional booster circuit improves booster voltage.Any booster circuit inserts after this auxiliary boost circuit, and the voltage of its ground end can at first be raised to than higher voltage, and then input voltage is boosted.Because the ground terminal voltage has been in one than higher current potential, the output voltage after boosting will be higher than the output voltage of simple booster circuit.
Background technology
When adopting traditional booster circuit, if require the higher value of boosting, often need the turn ratio bigger, the transformer that magnetic core is bigger, or the bigger inductance coil of magnetic core.For adopting battery powered apparatus, it is big that sort circuit exists volume, power consumption height, shortcoming such as caloric value is big
Summary of the invention
Big in order to overcome the volume that existing booster circuit exists when obtaining than high output voltage, the power consumption height, shortcomings such as caloric value is big, the utility model provide a kind of auxiliary boost circuit, and the voltage of the ground end of this circuit by promoting traditional booster circuit improves the output voltage values of booster circuit.
The utility model solves the technical scheme that its technical problem adopts: the grid of N-type field effect transistor T1 connects control end, and drain electrode connects resistance R 2, and source electrode connects resistance R 1; The other end of resistance R 2 connects resistance R 3, the anode of voltage-stabiliser tube D1, the anode of diode D2 and the grid of P type field effect transistor T2; The other end of resistance R 3 connects input, the negative electrode of voltage-stabiliser tube D1, the anode of diode D3 and the input IN of booster circuit; The source electrode of P type field effect transistor T2 connects the negative electrode of diode D2 and the ground end GND of booster circuit, and drain electrode connects resistance R 4; The other end ground connection of resistance R 1 and R4; The negative electrode of diode D3 connects output OUT and the output of booster circuit.N-type field effect transistor T1 can replace with NPN type triode.P type field effect transistor T2 can replace with the positive-negative-positive triode.
The beneficial effects of the utility model are volume and the power consumptions that significantly reduce traditional booster circuit, have significantly promoted output voltage simultaneously.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is schematic diagram of the present utility model.
Among Fig. 1, T1 is the N-type field effect transistor.T2 is P type field effect transistor.R1, R2, R3 and R4 are resistance.D1 is voltage-stabiliser tube.D2 and D3 are diodes.IN, OUT and GND are respectively input, output and the ground ends of booster circuit.
Embodiment
In Fig. 1, the grid of N-type field effect transistor T1 connects control end, and drain electrode connects resistance R 2, and source electrode connects resistance R 1; The other end of resistance R 2 connects resistance R 3, the anode of voltage-stabiliser tube D1, the anode of diode D2 and the grid of P type field effect transistor T2; The other end of resistance R 3 connects input, the negative electrode of voltage-stabiliser tube D1, the anode of diode D3 and the input IN of booster circuit; The source electrode of P type field effect transistor T2 connects the negative electrode of diode D2 and the ground end GND of booster circuit, and drain electrode connects resistance R 4; The other end ground connection of resistance R 1 and R4; The negative electrode of diode D3 connects output OUT and the output of booster circuit.
When output input logic " 0 ", N-type field effect transistor T1 turn-offs.Therefore, the voltage at voltage-stabiliser tube D1 two ends is 0, and voltage is 0 between the input IN of booster circuit and the ground end GND, and booster circuit is not worked.Output end voltage is approximately equal to input terminal voltage.
When output input logic " 1 ", N-type field effect transistor T1 conducting.Input terminal voltage produces a constant voltage, and makes P type field effect transistor T2 conducting by the dividing potential drop of resistance R 1, R2 and voltage-stabiliser tube D1 at voltage-stabiliser tube D1 two ends.Because the voltage of voltage regulation of voltage-stabiliser tube D1 is much larger than the cut-in voltage of P type field effect transistor T2, voltage can meet and exceed the minimum input voltage of booster circuit between the input IN of booster circuit and the ground end GND.Therefore, booster circuit is started working.Since during booster circuit work, voltage height between voltage ratio input IN and the ground end GND between the output OUT of booster circuit and the ground end GND, and output end voltage will be realized boost function above input terminal voltage.Diode D2 plays protection P type field effect transistor T2.Diode D3 guarantees that output voltage can not be lower than input voltage.Resistance R 1 and R4 play metering function, are used for protective circuit.
Claims (3)
1. an auxiliary boost circuit is characterized in that: the grid connection control end of N-type field effect transistor T1, drain electrode connection resistance R 2, source electrode connection resistance R 1; The other end of resistance R 2 connects resistance R 3, the anode of voltage-stabiliser tube D1, the anode of diode D2 and the grid of P type field effect transistor T2; The other end of resistance R 3 connects input, the negative electrode of voltage-stabiliser tube D1, the anode of diode D3 and the input IN of booster circuit; The source electrode of P type field effect transistor T2 connects the negative electrode of diode D2 and the ground end GND of booster circuit, and drain electrode connects resistance R 4; The other end ground connection of resistance R 1 and R4; The negative electrode of diode D3 connects output OUT and the output of booster circuit.
2. auxiliary boost circuit according to claim 1 is characterized in that: N-type field effect transistor T1 can replace with NPN type triode.
3. auxiliary boost circuit according to claim 1 is characterized in that: P type field effect transistor T2 can replace with the positive-negative-positive triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320025306 CN203071812U (en) | 2013-01-17 | 2013-01-17 | Auxiliary booster circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320025306 CN203071812U (en) | 2013-01-17 | 2013-01-17 | Auxiliary booster circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203071812U true CN203071812U (en) | 2013-07-17 |
Family
ID=48770561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320025306 Withdrawn - After Issue CN203071812U (en) | 2013-01-17 | 2013-01-17 | Auxiliary booster circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203071812U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944378A (en) * | 2013-01-17 | 2014-07-23 | 赵恩海 | Simple auxiliary step-up circuit |
-
2013
- 2013-01-17 CN CN 201320025306 patent/CN203071812U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944378A (en) * | 2013-01-17 | 2014-07-23 | 赵恩海 | Simple auxiliary step-up circuit |
| CN103944378B (en) * | 2013-01-17 | 2016-07-06 | 盐城市惠众新能源科技有限公司 | A kind of simple and easy auxiliary boost circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: 1002, room 418, unit 17, Qingjiang, Xiyuan, Jiangdong North Road, 210036, Jiangsu, Nanjing Patentee after: Zhao Enhai Address before: 210036, room 36, building 602, phoenix garden, Longfeng garden, Gulou District, Nanjing, Jiangsu Patentee before: Zhao Enhai |
|
| ASS | Succession or assignment of patent right |
Owner name: YANCHENG HUIZHONG NEW ENERGY TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: ZHAO ENHAI Effective date: 20150616 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150616 Address after: 224051 No. 666 Yingbin Road, Nanyang Economic Zone, Jiangsu, Yancheng City Patentee after: YANCHENG HUIZHONG NEW ENERGY TECHNOLOGY CO., LTD. Address before: 1002, room 418, unit 17, Qingjiang, Xiyuan, Jiangdong North Road, 210036, Jiangsu, Nanjing Patentee before: Zhao Enhai |
|
| DD01 | Delivery of document by public notice |
Addressee: Zhao Enhai Document name: Notification of Passing Examination on Formalities |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20130717 Effective date of abandoning: 20160706 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |