CN203039562U - Series connection IGBT voltage-equalizing circuit based on grid control - Google Patents

Series connection IGBT voltage-equalizing circuit based on grid control Download PDF

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CN203039562U
CN203039562U CN 201320016684 CN201320016684U CN203039562U CN 203039562 U CN203039562 U CN 203039562U CN 201320016684 CN201320016684 CN 201320016684 CN 201320016684 U CN201320016684 U CN 201320016684U CN 203039562 U CN203039562 U CN 203039562U
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igbt
voltage
grid
auxiliary
series connection
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帅智康
陈功
沈征
尹新
孙冰冰
廖淋圆
蒋梦轩
彭斌
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Hunan University
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Hunan University
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Abstract

The utility model discloses a series connection IGBT voltage-equalizing circuit based on grid control. Static voltage-equalizing resistor are used as sampling resistors at the same time, a voltage transformer is connected with a grid electrode and an emitting electrode of an auxiliary IGBT, when overvoltage occurs, through conduction of the auxiliary IGBT, an auxiliary capacitor is connected in parallel between collector electrodes and grid electrodes of IGBTs, thereby realizing relatively good voltage-equalizing effects. Compared with the prior art, in the series connection IGBT voltage-equalizing circuit based on grid control, the static voltage-equalizing resistor are used as sampling resistors, whether the auxiliary capacitor participate in voltage adjustment is determined by whether the auxiliary IGBT is conducted or not, and only few components are needed to realize ideal voltage equalization of IGBTs in series connection.

Description

A kind of based on grid-controlled series IGBT equalizer circuit
Technical field
The overvoltage that the utility model relates to a kind of IGBT suppresses circuit, and is particularly a kind of based on grid-controlled series IGBT equalizer circuit.
Background technology
Along with the withstand voltage and through-current capability of IGBT improves gradually, IGBT is more and more wider in application on power system as large power all-controlled type device, HVDC Light for example, being incorporated into the power networks etc. of wind power generation.Existing IGBT series connection method is a lot, and direct series connection is arranged, three level, many level, concatenation technology etc.But many level, concatenation technology control circuit complexity, the device count of use increases.And two level or three level device count are little, and drive circuit is simple, so in the high voltage power transmission practical engineering application or based on the direct serial connection technology of IGBT.But adopt direct IGBT serial connection technology often to need dozens of even up to a hundred IGBT to connect, because IGBT converter valve switching speed is fast, itself there are differences device, thereby signal transmits the unbalanced-voltage-division weighing apparatus that asynchronous grade will cause voltage, electric stress when particularly dynamic electric voltage is unbalanced impacts and more may cause faults such as IGBT series connection valve burns out, and therefore needs peripheral auxiliary circuit to regulate the electric voltage equalization of IGBT series connection converter valve.
At present, a lot of to the research of IGBT series connection method both at home and abroad, load-side control and grid control two big classes.Load-side control refers to when the IGBT load side voltage is unbalanced, directly load-side just collector emitter carry out regulating and controlling.Grid control refers to when voltage occurring when unbalanced, by the grid of IGBT being regulated to control the equilibrium of IGBT voltage.Control at the IGBT series average-voltage, when controlling for the employing load-side, when overvoltage marquis when bigger occurring, the method of load end control is because the absorption energy difference of IGBT two ends electric capacity, the both end voltage that will cause IGBT is unbalanced bigger, the load-side control turn-off time is longer, thereby loss is bigger.In the method for IGBT series connection control, more relatively at grid-controlled research both at home and abroad, but the general grid control method response delay time is longer, and circuit is comparatively complicated, perhaps may cause concussion.
Summary of the invention
Technical problem to be solved in the utility model is, at the prior art deficiency, provide a kind of simple in structure, the reaction time is fast based on grid-controlled series IGBT equalizer circuit, realizes static state and the dynamic electric voltage equilibrium of series IGBT.
For solving the problems of the technologies described above, the technical scheme that the utility model adopts is: a kind of based on grid-controlled series IGBT equalizer circuit, the main IGBT that comprises series connection more than two, described each main IGBT all is connected with a pressure unit, described pressure unit comprises operational amplifier, voltage transformer, auxiliary IGBT or metal-oxide-semiconductor, by all pressures branch road that two grading resistors are composed in series, the described branch road of all pressing is connected in parallel between the described main IGBT collector and emitter; Described operational amplifier positive input terminal is in parallel to be inserted between described two grading resistors, input of described operational amplifier output terminal and the former limit of described voltage transformer is connected successively, another input of the former limit of described voltage transformer and described branch road one end of all pressing, the emitter of main IGBT connects, an output of described voltage transformer secondary is connected with described auxiliary IGBT grid or metal-oxide-semiconductor grid, another output of described voltage transformer secondary is connected with described auxiliary IGBT emitter or metal-oxide-semiconductor source electrode, and described auxiliary IGBT emitter or metal-oxide-semiconductor source electrode insert described main IGBT grid; The described branch road other end of all pressing inserts described auxiliary IGBT collector electrode or metal-oxide-semiconductor drain electrode by a capacitance resistance parallel branch; Described operational amplifier output terminal is connected with described operational amplifier negative input end.
Described all the pressure between branch road and the described resistance capacitance parallel branch is connected to a diode.
Compared with prior art, the beneficial effect that the utility model has is: the utility model circuit reaction time is fast, and is simple in structure, realized static state and the dynamic electric voltage equilibrium of series IGBT.
Description of drawings
Fig. 1 is the circuit theory diagrams of two main IGBT series connection of the utility model one embodiment.
Embodiment
As shown in Figure 1, the utility model one embodiment comprises two main IGBT
Figure DEST_PATH_RE-DEST_PATH_IMAGE002
With
Figure DEST_PATH_RE-DEST_PATH_IMAGE004
, static voltage sharing With
Figure DEST_PATH_RE-DEST_PATH_IMAGE008
, pulse transformer, operational amplifier
Figure DEST_PATH_RE-DEST_PATH_IMAGE010
(being used as voltage follower in the present embodiment), voltage transformer
Figure DEST_PATH_RE-DEST_PATH_IMAGE012
, auxiliary IGBT
Figure DEST_PATH_RE-DEST_PATH_IMAGE014
, auxiliary capacitor
Figure DEST_PATH_RE-DEST_PATH_IMAGE016
, discharge resistance
Figure DEST_PATH_RE-DEST_PATH_IMAGE018
(auxiliary capacitor
Figure DEST_PATH_11438DEST_PATH_IMAGE016
, discharge resistance
Figure DEST_PATH_484008DEST_PATH_IMAGE018
Compose in parallel the resistance capacitance branch road), diode
Figure DEST_PATH_RE-DEST_PATH_IMAGE020
Constitute.Static voltage sharing
Figure DEST_PATH_659774DEST_PATH_IMAGE006
With
Figure DEST_PATH_585005DEST_PATH_IMAGE008
Be connected in parallel on collector electrode-emitter of main IGBT as voltage detecting resistance,
Figure DEST_PATH_871630DEST_PATH_IMAGE008
Be connected in parallel on voltage transformer
Figure DEST_PATH_933127DEST_PATH_IMAGE012
Former limit, auxiliary IGBT Grid and collector electrode be connected in parallel on Secondary, auxiliary capacitor And diode
Figure DEST_PATH_904832DEST_PATH_IMAGE020
Be connected on collector electrode and the auxiliary IGBT of main IGBT
Figure DEST_PATH_156822DEST_PATH_IMAGE014
Collector electrode between,
Figure DEST_PATH_56645DEST_PATH_IMAGE018
Be connected in parallel on auxiliary capacitor
Figure DEST_PATH_622756DEST_PATH_IMAGE016
Two ends, wherein " x " expression " 1 " or " 2 ".
Resistance
Figure DEST_PATH_986741DEST_PATH_IMAGE006
With
Figure DEST_PATH_347315DEST_PATH_IMAGE008
Series connection is regulated static electric voltage equalization as static voltage sharing.Resistance
Figure DEST_PATH_734434DEST_PATH_IMAGE008
As voltage detecting resistance, when no matter which kind of reason causes that voltage on certain main IGBT surpasses that main IGBT sets when bearing voltage, On voltage will be above the threshold voltage of auxiliary IGBT, the overvoltage signal of collection is strengthened the back through voltage follower and is acted on auxiliary IGBT by voltage transformer
Figure DEST_PATH_57148DEST_PATH_IMAGE014
Grid-emitter, thereby make auxiliary IGBT
Figure DEST_PATH_854203DEST_PATH_IMAGE014
Conducting, auxiliary capacitor at this moment
Figure DEST_PATH_463039DEST_PATH_IMAGE016
Regulate the electric voltage equalization of IGBT, thereby reach the purpose that the main IGBT of series connection all presses.Wherein the effect of voltage transformer comprises following several aspect: at first make when overvoltage occurring
Figure DEST_PATH_RE-DEST_PATH_IMAGE022
Thereby the pipe conducting makes electric capacity
Figure DEST_PATH_698848DEST_PATH_IMAGE016
Be connected in parallel on IGBT collector electrode-emitter two ends; On the other hand, make equalizer circuit not influence the setting of the normal turn-off voltage of main IGBT, can also play in addition isolate the static state voltage equipoise branch road and
Figure DEST_PATH_709529DEST_PATH_IMAGE004
The effect of grid emitter.For the load that prevents the voltage transformer secondary influence to former sampling edge signal, increase a voltage follower on the former limit of voltage transformer, voltage follower also can play the effect that strengthens driving force simultaneously.Auxiliary capacitor has increased diode to the influence of ON time when preventing conducting
Figure DEST_PATH_RE-DEST_PATH_IMAGE024
Figure DEST_PATH_739802DEST_PATH_IMAGE018
Effect be electric capacity
Figure DEST_PATH_835934DEST_PATH_IMAGE016
Provide a discharge loop, electric capacity
Figure DEST_PATH_609855DEST_PATH_IMAGE016
Energy should in one-period, pass through
Figure DEST_PATH_475043DEST_PATH_IMAGE018
Consume, allow electric capacity
Figure DEST_PATH_613900DEST_PATH_IMAGE016
Suppress to prepare for join overvoltage next time.
Auxiliary IGBT can adopt metal-oxide-semiconductor to replace, i.e. the collector electrode of the drain electrode of metal-oxide-semiconductor equivalence IGBT, the emitter of the source electrode equivalence IGBT of MOS.

Claims (2)

1. one kind based on grid-controlled series IGBT equalizer circuit, the main IGBT that comprises series connection more than two, it is characterized in that, described each main IGBT all is connected with a pressure unit, described pressure unit comprises operational amplifier, voltage transformer, auxiliary IGBT or metal-oxide-semiconductor, by all pressures branch road that two grading resistors are composed in series, the described branch road of all pressing is connected in parallel between the described main IGBT collector and emitter; Described operational amplifier positive input terminal is in parallel to be inserted between described two grading resistors, input of described operational amplifier output terminal and the former limit of described voltage transformer is connected successively, another input of the former limit of described voltage transformer and described branch road one end of all pressing, the emitter of main IGBT connects, an output of described voltage transformer secondary is connected with described auxiliary IGBT grid or metal-oxide-semiconductor grid, another output of described voltage transformer secondary is connected with described auxiliary IGBT emitter or metal-oxide-semiconductor source electrode, and described auxiliary IGBT emitter or metal-oxide-semiconductor source electrode insert described main IGBT grid; The described branch road other end of all pressing inserts described auxiliary IGBT collector electrode or metal-oxide-semiconductor drain electrode by a capacitance resistance parallel branch; Described operational amplifier output terminal is connected with described operational amplifier negative input end.
2. according to claim 1ly it is characterized in that based on grid-controlled series IGBT equalizer circuit described all the pressure between branch road and the described resistance capacitance parallel branch is connected to a diode.
CN 201320016684 2013-01-14 2013-01-14 Series connection IGBT voltage-equalizing circuit based on grid control Expired - Lifetime CN203039562U (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104362840A (en) * 2014-12-12 2015-02-18 中国电建集团中南勘测设计研究院有限公司 Load-side control series-connection IGBT (Insulated Gate Bipolar Translator) voltage-sharing circuit
CN104377941A (en) * 2014-12-12 2015-02-25 中国电建集团中南勘测设计研究院有限公司 Load-side control IGBT (insulated gate bipolar transistor) series voltage sharing circuit
CN104377942A (en) * 2014-12-12 2015-02-25 中国电建集团中南勘测设计研究院有限公司 High-voltage IGBT (insulated gate bipolar transistor) series conversion voltage-sharing circuit
CN104377943A (en) * 2014-12-12 2015-02-25 中国电建集团中南勘测设计研究院有限公司 Voltage-sharing circuit for serial-connected IGBTs (insulated gate bipolar transistors)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104362840A (en) * 2014-12-12 2015-02-18 中国电建集团中南勘测设计研究院有限公司 Load-side control series-connection IGBT (Insulated Gate Bipolar Translator) voltage-sharing circuit
CN104377941A (en) * 2014-12-12 2015-02-25 中国电建集团中南勘测设计研究院有限公司 Load-side control IGBT (insulated gate bipolar transistor) series voltage sharing circuit
CN104377942A (en) * 2014-12-12 2015-02-25 中国电建集团中南勘测设计研究院有限公司 High-voltage IGBT (insulated gate bipolar transistor) series conversion voltage-sharing circuit
CN104377943A (en) * 2014-12-12 2015-02-25 中国电建集团中南勘测设计研究院有限公司 Voltage-sharing circuit for serial-connected IGBTs (insulated gate bipolar transistors)

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Granted publication date: 20130703

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