CN2030379U - Planar gas-sensitive semiconductor sensor - Google Patents
Planar gas-sensitive semiconductor sensor Download PDFInfo
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- CN2030379U CN2030379U CN 87216840 CN87216840U CN2030379U CN 2030379 U CN2030379 U CN 2030379U CN 87216840 CN87216840 CN 87216840 CN 87216840 U CN87216840 U CN 87216840U CN 2030379 U CN2030379 U CN 2030379U
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- gas
- sensitive
- semiconductor
- sensitive composite
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Abstract
The utility model relates to a semiconductor gas-sensitive composite element, which is characterized in that a cover layer of polycrystalline semiconductor of gas-sensitive active metal oxides is deposited on the surface of the drift region of a transverse P-N junction plane type silicon device, on the surface of an injection region and on the electrode thereof. The utility model has the advantages of good interchange ability, high sensitivity and low dissipating energy. The semiconductor gas-sensitive composite element is suitable for an electric bridge circuit connected in the form of a black and a white elements and is used for making up of a sensor which is used for monitoring reducing gas, and besides the semiconductor gas-sensitive composite element is suitable for monitoring all kinds of inflammable gas and organic solvent which is volatile, is easily burnt and is easily exploded.
Description
The utility model relates to a kind of semiconductor air-sensitive composite component.
Semiconductor gas sensor is made with the metal oxide sintered ceramic usually.This element is with the surface conductance of its cellular poly semiconductor, can be under 300～600 ℃ delicately along with ambiance in the content of reducibility gas composition different and change into principal character tempestuously.Element base core before this element thermal sintering is made, and mostly is molded abroad, and domestic many with hand finishing.Such goods, work efficiency is low during making, and survival rate is low, product is individual inhomogeneous.And, because its working temperature must be at 300～600 ℃, so must bury coil underground with the platinum filament coiled of φ 40 μ m at the base in-core, heater as element, this not only when device becomes the detector of common continuous operation, needs to consume certain heating power, and because survival rate is low.Brought the luxus consumption of noble metal again, thus make product the cost height, consume big, cost an arm and a leg, seriously hindered the extensive use of gas-sensitive sensing element.In addition, also the dispersiveness of the performance parameter of bringing to manufactured goods because of the heterogeneity of material and forming technology causes this gas sensory element in supporting application, lacks interchangeability, this has brought very big inconvenience to application again, and because the low waste that causes element then of supporting rate.In addition, this gas sensor of making by unification compound composition sintering, atmosphere for the reproducibility fuel gas has " broad spectrum type " gas sensing property, and it is responsive entirely and do not have distinguishing and a selective sensitivity for the various compositions of the reducibility gas in the ambiance in other words.For this reason, since the early eighties, Japan and the United States, Germany etc. have announced several the some optionally modified model gas sensors with gas-sensitive property successively, but corresponding product is not seen in the domestic market, and its corresponding critical process is not broken through yet.
Task of the present utility model provides a kind of gas-sensitive sensing element that can batch machining, reaches the product uniformity, has preferably interchangeability and selective sensitivity and consume energy low, low price and technology are easy to realize big purpose of producing.
The utility model is achieved in that on the surface, drift region and injection region electrode of the silicon device of the horizontal P-N knot of having of planar structure, is deposited with the metal oxide poly semiconductor cover layer of gas-sensitive activity.Metal oxide poly semiconductor cover layer adopts SnO
2, ZnO, Fe
2O
3Deng as gas sensitive, it is realized with vapour-phase pyrolysis deposit and photoetching formation technology.Tectal effect is that the base electricity of leading the modulation lateral transistor with oxide air-sensitive electricity leads, and directly to tie enlarge-effect compound with P-N thereby make gas sensitive effect.
The utility model has the advantages that, it adopts " planar technique " of semiconductor device as the basic means of making, particularly can form the metal oxide semiconductor overlay film with gas-sensitive activity of homogeneous with the technology mode of big production, this overlay film can be repeatedly by metal oxide not of the same race through deposit and photoetching formation, thereby make element obtain that different reducing gas compositions is had different selective sensitivities.Because the oxide semiconductor air-sensitive overlay film granularity of this homogeneous is fine and closely woven, and is convenient to technology controlling and process, therefore make its uniformity consistency that can realize product and interchangeability.Owing to adopt gas sensitive effect and the compound structure of P-N knot enlarge-effect, it is become need not to heat and " room temperature air-sensitive " air-sensitive detector sensing element that low consumption moves.
Concrete structure of the present utility model is provided by following examples and accompanying drawing thereof:
Fig. 1 is an exemplary block diagram of the present utility model.Wherein: 1, substrate; 2, drift region; 3, injection region; 4, electrode; 5, gas sensing layer; 6, SiO
2Protective layer.
Fig. 2 is a kind of typical application examples of the present utility model, and wherein: A is the gas sensory element, IC-linear amplifier, SCR-noncontacting switch, BZ-alarm or start-up control circuit.
Referring to accompanying drawing: by substrate 1, drift region 2, injection region 3, electrode 4, SiO
2Protective layer 6 has constituted the plane silicon device with horizontal P-N knot.Top equal deposit one deck of drift region 2 and injection region 3 and electrode 4 has the metal oxide poly semiconductor cover layer 5 of gas-sensitive activity.This deposit gas sensing layer adopts SnO
2, ZnO, Fe
2O
3Deng material preparation.Can use homogenous material, also can with different materials repeatedly deposit form sandwich construction.
The utility model is suitable for being connected into electric bridge in " black-and-white component " mode, constitutes the transducer (Fig. 2) of monitoring reducibility gas.It is applicable to various fuel gas (as: H
2, CO, BH
3, CH
4, C
2H
2Deng) and the detection of the inflammable and explosive organic solvent of volatility (as: gasoline, ether, alcohol, cyclic hydrocarbon, ketone, aldehyde, ester etc.) and continuation monitors and safety automation control, be the Primary Component of industry department indispensable safe practice perception means such as oil field, colliery, chemical industry, rocket launching, grain and oil processing, Building Fire Protection, medical and health, take pictures printing, environmental protection and system safety engineering formation.
Claims (3)
1, a kind of semiconductor air-sensitive composite component, it comprises by substrate, drift region, injection region, electrode and SiO
2That protective layer constitutes, have horizontal P-N junction plane type silicon device, it is characterized in that: the cover layer that adds layer of metal oxide gas-sensitive activity material on the surface of drift region and injection region and electrode thereof.
2, semiconductor air-sensitive composite component according to claim 1 is characterized in that: the metal oxide poly semiconductor cover layer of said gas-sensitive activity adopts SnO
2, ZnO, Fe
2O
3Deposit of material vapour-phase pyrolysis and photoetching process moulding.
3, according to claim 1 and 2 described semiconductor air-sensitive composite components, it is characterized in that: the deposited capping layer of said gas-sensitive activity material can be the single layer structure of single material, also can be to constitute sandwich construction by the material of deposit unlike material repeatedly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 87216840 CN2030379U (en) | 1987-12-24 | 1987-12-24 | Planar gas-sensitive semiconductor sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 87216840 CN2030379U (en) | 1987-12-24 | 1987-12-24 | Planar gas-sensitive semiconductor sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2030379U true CN2030379U (en) | 1989-01-04 |
Family
ID=4830712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 87216840 Withdrawn CN2030379U (en) | 1987-12-24 | 1987-12-24 | Planar gas-sensitive semiconductor sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2030379U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102192925A (en) * | 2009-12-14 | 2011-09-21 | 基德科技公司 | Sensor apparatus and method therefor |
| CN104677952A (en) * | 2015-03-25 | 2015-06-03 | 海卓赛思（苏州）传感技术有限公司 | High-stability film hydrogen sensor and use method thereof |
| CN105929003B (en) * | 2016-04-12 | 2018-06-26 | 吉林大学 | A kind of preparation method of catalysis filter membrane for improving gas sensor selectivity |
-
1987
- 1987-12-24 CN CN 87216840 patent/CN2030379U/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102192925A (en) * | 2009-12-14 | 2011-09-21 | 基德科技公司 | Sensor apparatus and method therefor |
| US8534117B2 (en) | 2009-12-14 | 2013-09-17 | Kidde Technologies, Inc. | Sensor apparatus and method therefor |
| CN104677952A (en) * | 2015-03-25 | 2015-06-03 | 海卓赛思（苏州）传感技术有限公司 | High-stability film hydrogen sensor and use method thereof |
| CN105929003B (en) * | 2016-04-12 | 2018-06-26 | 吉林大学 | A kind of preparation method of catalysis filter membrane for improving gas sensor selectivity |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C15 | Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993) | ||
| RN01 | Renewal of patent term | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |