CN203014990U - Image sensor - Google Patents
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- CN203014990U CN203014990U CN 201220686042 CN201220686042U CN203014990U CN 203014990 U CN203014990 U CN 203014990U CN 201220686042 CN201220686042 CN 201220686042 CN 201220686042 U CN201220686042 U CN 201220686042U CN 203014990 U CN203014990 U CN 203014990U
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Abstract
An image sensor comprises a plurality of pixels arranged in arrays, wherein each array of pixels shares an input power supply, an input lead wire and a signal output end; each pixel comprises a first source following tube, a floating diffusion zone, a photodiode, and a transmission tube; sources of the first source following tubes are electrically connected with the corresponding signal output ends; the floating diffusion zones are electrically connected with grids of the corresponding first source following tubes; drains of the transmission tubes are the floating diffusion zones; and sources of the transmission tubes are the photodiodes. The image sensor further comprises a plurality of voltage compensation circuits, wherein each array of pixels corresponds to one voltage compensation circuit; each voltage compensation circuit comprises an input end and an output end; the input ends are electrically connected with the corresponding input power supplies; and the output ends are electrically connected with drains of the corresponding first source following tubes. The voltage compensation circuits have an effect that when the image sensor works, a varying tendency of output voltage of the output ends of the voltage compensation circuits is the same as that of voltage of the signal output ends. The scheme of the utility model can improve the performance of the image sensor.
Description
Technical field
The utility model relates to image device, relates in particular to the method for imageing sensor, increase imageing sensor electric charge-voltage gain.
Background technology
Along with developing rapidly of digital technology, semiconductor fabrication and network, short several years, digital camera developed into 400,5,000,000 pixels even higher just by the hundreds of thousands pixel.Not only in the American-European countries of prosperity, digital camera has occupied very large market, be exactly in developing China, the market of digital camera is also increasing with surprising rapidity, therefore, its key components and parts---image sensor products just becomes the object that current and following industry is paid close attention to, and is attracting numerous manufacturers to drop into.Distinguish with product category, image sensor products mainly is divided into the CCD(charge-coupled image sensor), cmos sensor (complementary metal oxide imageing sensor).
The advantages such as the cmos image sensing is little due to power consumption, switching rate is fast, and size is little are widely used in digital camera, optical imaging device field.The dot structure of existing cmos image sensor mainly is divided into two kinds, is respectively 3T structure and 4T structure.Each pixel of the pixel of 3T structure comprises that a reset transistor, a capable gate tube and a source follow pipe.The pixel of 4T structure has increased a transfer tube than the pixel of 3T structure.For the 4T dot structure, each pixel always needs a transfer tube, and transfer tube makes the controllability of pixel better, can effectively reduce thermal noise and dark current.
Fig. 1 is the electrical block diagram of pixel in the cmos image sensor of 4T structure in prior art, Fig. 2 is the Pixel arrangement schematic diagram of cmos image sensor in prior art, with reference to figure 1 and Fig. 2, each pixel comprises that light sensitive diode PD, transfer tube TX, reset transistor RST, source follow pipe SF and row gate tube (not shown), wherein the drain electrode of transfer tube TX is floating diffusion region, the source electrode of transfer tube TX is light sensitive diode, the drain electrode that pipe is followed in the source connects supply voltage Vdd, and the drain electrode of reset transistor RST connects input voltage vin.Its operation principle is: before (1) transfer tube TX opens, floating diffusion region FD is carried out reset operation, be specially: transfer tube TX keeps closing, reset transistor RST first opens, then close, make floating diffusion region FD charging, the source electrode of following pipe SF this moment in the source is read output voltage V out and is pressed Vrf as electrical reference signal; (2) floating diffusion region reset complete after, transfer tube TX opens, in transfer tube TX opening procedure, reset transistor RST continues to keep closing, light sensitive diode PD gathers photogenerated charge, the photogenerated charge that is collected by light sensitive diode PD enters into floating diffusion region FD, then closing transmission pipe TX, the source electrode of following pipe in the source reads output voltage V out as sampled voltage Vsample.Voltage difference Vsignal between Vrf and Vsample is the signal of telecommunication corresponding with incident optical signal, is used for the follow-up picture that is reduced into.
More contents about cmos image sensor can be with reference to the Chinese patent literature of disclosed No. 1437388A on August 20th, 2003.
Yet the cmos image sensor performance of prior art is bad.
The utility model content
The problem that the utility model solves is that the cmos image sensor performance of prior art is bad.
For addressing the above problem, the utility model provides a kind of imageing sensor, comprises input power, input lead, and a plurality of pixels that are arranged in array, each row pixel column comprises: one or more pixels; Each row pixel shares input power, input lead, shared signal output;
Each pixel comprises: pipe is followed in the first source, and the first source is followed the pipe source electrode and is electrically connected to described signal output part; Floating diffusion region, the grid of following pipe with described the first source is electrically connected to; Light sensitive diode; Transfer tube, its drain electrode is described floating diffusion region, its source electrode is described light sensitive diode;
Described imageing sensor also comprises a plurality of voltage compensating circuits, the corresponding voltage compensating circuit of each row pixel, each voltage compensating circuit comprises input and output, described input is used for being electrically connected to described input power, described output and described the first source are followed the pipe drain electrode and be electrically connected to, the acting as of voltage compensating circuit: when imageing sensor is worked, the variation tendency of described voltage compensating circuit output output voltage is identical with the variation tendency of described signal output part voltage.
Optionally, also comprise gating circuit, be used for the pixel of gating work.
Optionally, in each row pixel, each pixel the first source is followed the pipe drain electrode and is shared input lead and be electrically connected to the voltage compensating circuit output.
Optionally, described voltage compensating circuit is that pipe is followed in the second source, the drain electrode that pipe is followed in described the second source is the input of described voltage compensating circuit, the source electrode that pipe is followed in described the second source is the output of described voltage compensating circuit, and the grid that pipe is followed in described the second source is electrically connected to described signal output part.
Optionally, also comprise: reset transistor is electrically connected to described floating diffusion region.
Optionally, the described imageing sensor cmos image sensor that is 4T structure or 5T structure.
Compared with prior art, the utlity model has following advantage:
The cmos image sensor of the technical program, every row pixel has increased voltage compensating circuit on the basis of existing technology, the input of voltage compensating circuit is electrically connected to the input power that every row pixel shares, and the output of voltage compensating circuit is electrically connected to the drain electrode that pipe is followed in the first source.Acting as of voltage compensating circuit: the variation tendency that makes imageing sensor when work voltage compensating circuit output output voltage is identical with the variation tendency of the signal output part voltage that every row pixel shares.Like this, the voltage that is used for after transfer tube is opened compensation the first source following the pipe drain electrode and the voltage difference of floating diffusion region voltage will be less than the required electric charges of existing structure at the required electric charge of difference of transfer tube switch front and back, therefore producing the required total electrical charge number of identical charges voltage gain will correspondingly reduce, identical photogenerated charge in like manner, electric charge-the voltage gain that produces will be larger, also just can improve the performance of cmos image sensor.
In specific embodiment, voltage compensating circuit is that pipe is followed in the second source, can very simply realize voltage compensating circuit, and, can not increase too many technique to the method for making cmos image sensor yet.
Description of drawings
Fig. 1 is the electrical block diagram of pixel in the cmos image sensor of 4T structure in prior art;
Fig. 2 is the Pixel arrangement schematic diagram of cmos image sensor in prior art;
Fig. 3 is the electrical block diagram of pixel in the cmos image sensor of the utility model specific embodiment 4T structure;
Fig. 4 is the pel array schematic diagram of the utility model specific embodiment cmos image sensor;
Fig. 5 is pel array schematic diagram in the cmos image sensor of display pixel structure.
Embodiment
Electric charge-the voltage gain of imageing sensor is the important parameter that affects its performance, and the gain voltage that the photogenerated charge of equivalent produces is larger, and in output signal, the signal of presentation video information is just stronger, and namely the performance of imageing sensor is better.The inventor finds through research, cause bad former of the cmos image sensor performance of prior art because:
with reference to figure 1, the cmos image sensor of prior art, TX opens at transfer tube, after the photogenerated charge of light sensitive diode PD accumulation enters floating diffusion region FD, the voltage Vfd of floating diffusion region FD is subject to the impact of photogenerated charge, before comparing transfer tube and opening, the voltage Vfd of floating diffusion region FD has become change, and that supply voltage Vdd keeps is constant, the voltage that transfer tube is opened front floating diffusion region FD is Vfd1, the voltage that transfer tube is opened rear floating diffusion region FD is Vfd2, therefore before and after the transfer tube switch voltage difference between Vdd and Vfd a numerical value is arranged is Δ V[Δ V=(Vdd-Vfd2)-(Vdd-Vfd1)=Vfd1-Vfd2] variation, the photogenerated charge that the variation of this voltage difference can consume a part compensates, the photogenerated charge of this part enters the source and follows pipe SF, and then reduced the photogenerated charge number that is used for voltage gain, corresponding source is followed the sampled voltage Vsample that the pipe source electrode reads and is reduced, the voltage difference Vsignal between reference voltage Vrf and sampled voltage Vsample reduces, namely the signal of telecommunication corresponding with incident optical signal reduces, therefore the performance of imageing sensor will be affected.
Cmos image sensor of the present utility model, increased voltage compensating circuit on the basis of existing cmos image sensor, the effect of this voltage compensating circuit is to be that the variation tendency of output voltage that the pipe source electrode is followed in the source feeds back to the drain electrode that pipe is followed in the source with signal output part, makes the source follow the change in voltage trend of pipe drain electrode identical with the variation tendency of signal output part output voltage.In this case: before and after the changing value Δ V ' of the voltage difference before and after the transfer tube switch between Vdd and Vfd=(Vsfd2-Vfd2)-(Vsfd1-Vfd1)=Vfd1-Vfd2+Vsfd2-Vsfd1, Vsfd1 and Vsfd2 are respectively the transfer tube switch, the input voltage Vsfd of transistor drain is followed in the source.Because the variation tendency of Vfd and Vsfd is identical, so Δ V '＜Δ V, therefore reduced the variation of the voltage difference between transfer tube switch front and back Vdd and Vfd, the photogenerated charge number that the corresponding variation that also just can reduce due to this voltage difference consumes, increase sampled signal, therefore can improve the performance of imageing sensor.
For above-mentioned purpose of the present utility model, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail.
Set forth detail in the following description so that fully understand the utility model.But the utility model can be different from alternate manner described here and implements with multiple, and those skilled in the art can be in the situation that do similar popularization without prejudice to the utility model intension.Therefore the utility model is not subjected to the restriction of following public embodiment.
Cmos image sensor of the present utility model can be the cmos image sensor of 4T structure, also can be the cmos image sensor of 5T structure, and well known to a person skilled in the art and can utilize cmos image sensor of the present utility model.Following emphasis is take the cmos image sensor of 4T structure as the example explanation.
Fig. 3 is the electrical block diagram of pixel in the cmos image sensor of 4T structure in the utility model specific embodiment, Fig. 4 is the pel array schematic diagram of the cmos image sensor of the utility model specific embodiment, and Fig. 5 is pel array schematic diagram in the cmos image sensor of display pixel structure.
With reference to figure 3, Fig. 4 and Fig. 5, the cmos image sensor of the utility model specific embodiment comprises a plurality of pixel p ixel that are arranged in array, and each row pixel column comprises: one or more pixel p ixel; Each row pixel shares the input power (not shown), shares input lead 21, shared signal output; The voltage of input power is Vdd, and the output voltage of signal output part is Vout.
Wherein, each pixel p ixel comprises: pipe SF1 is followed in the first source, and the first source is followed pipe SF1 source electrode and is electrically connected to signal output part; Floating diffusion region FD, the grid of following pipe SF1 with described the first source is electrically connected to; Light sensitive diode PD, transfer tube TX, the drain electrode of transfer tube TX is floating diffusion region FD, the source electrode of transfer tube TX is light sensitive diode.Connecting valve signal on the grid of transfer tube TX, be used for transfer tube TX conducting, close.
With reference to figure 4, cmos image sensor also comprises: a plurality of voltage compensating circuits 23, the corresponding voltage compensating circuit of each row pixel, each voltage compensating circuit comprises input and output, the input of voltage compensating circuit 23 is electrically connected to input power, and output is electrically connected to the drain electrode that pipe SF1 is followed in the first source.Acting as of voltage compensating circuit 23: when making imageing sensor work, the variation tendency of the output output voltage of voltage compensating circuit 23 is identical with the variation tendency of signal output part voltage Vout.Namely before and after transfer tube TX opened, the variation tendency of the output output voltage of voltage compensating circuit 23 was identical with the variation tendency of signal output part voltage Vout.
With reference to figure 4, Fig. 5, in the utility model specific embodiment, each row pixel shares input lead 21, and the input of described voltage compensating circuit 23 is electrically connected to described input power by described input lead 21; Source electrode, signal output part that pipe SF1 is followed in each row pixel shared signal output line 22, the first sources all are electrically connected to output line 22, and namely the first source is followed the voltage that the source electrode of managing SF1 exports and exported signal output part to by output line 22.And, the output that the drain electrode of pipe SF1, described voltage compensating circuit are followed in the first source is electrically connected to by described input lead 21, that is to say, the voltage of the output output of voltage compensating circuit 23 exports by input lead 21 drain electrode that pipe SF1 is followed in the first source to.
With reference to figure 4, in the utility model specific embodiment, cmos image sensor also comprises gating circuit 24, is used for the pixel of gating work.By the effect of gating circuit 24, every row pixel column only has a pixel job simultaneously.Concrete structure about this gating circuit 24 is known technology, does not do at this and gives unnecessary details.
With reference to figure 3, Fig. 4 and Fig. 5, in the utility model specific embodiment, voltage compensating circuit 23 is that pipe SF2 is followed in the second source, and the drain electrode of pipe SF2 is followed as the input of voltage compensating circuit in described the second source, is electrically connected to input power; The source electrode that the SF2 of pipe is followed in the second source is the output of voltage compensating circuit, the drain electrode of following pipe SF1 by input lead 21 and described the first source is electrically connected to, and the voltage of source electrode output that the SF2 of pipe is followed in the second source replaces supply voltage of the prior art to follow the supply voltage of managing SF1 as the first source; The grid that pipe SF2 is followed in the second source is electrically connected to the source electrode that pipe SF1 is followed in described the first source, also just be equivalent to the output voltage V out of signal output part is connected to the grid that pipe SF2 is followed in the second source, the variation of the output voltage V out of signal output part is fed back to the second source follow pipe SF2, follow pipe SF2 through the second source and this variation is fed back to the first source follow pipe SF1.
With reference to figure 3, in the utility model specific embodiment, the pixel of cmos image sensor is the 4T structure, cmos image sensor also comprises: reset transistor RST, be electrically connected to described floating diffusion region FD, concrete connected mode is: the drain electrode of reset transistor RST connects input voltage vin, and source electrode is electrically connected to floating diffusion region FD, connecting valve signal on grid (in figure not label), be used for reset transistor RST conducting, close.
The operation principle of the cmos image sensor of the 4T structure of the utility model specific embodiment is same as the prior art.After adopting the cmos image sensor of this embodiment, the first source follow the pipe SF1 the basis on have increased by second source follow the pipe SF2, the source electrode of pipe SF1 is followed except being used for output voltage in the first source, also follow the grid voltage of pipe SF2 as the second source, the voltage Vdd of input power directly is connected to the drain electrode that pipe SF2 is followed in the second source, and the input terminal voltage that this moment, transistor SF1 was followed in the first source becomes the output voltage V sfd that pipe SF2 is followed in the second source.Under this kind structure, when the transfer tube opening operation, the variation of the voltage Vfd of floating diffusion region, can follow pipe SF2 effect by the second source that signal output part connects, cause that the first source follows transistorized input terminal voltage Vsfd and also change with the output voltage V out of signal output, wherein the output voltage V out of the signal output part voltage Vfd that follows floating diffusion region changes along same trend.suppose under this new structure, before and after the transfer tube switch, the first source is followed transistorized input terminal voltage Vsfd and is respectively Vsfd1 and Vsfd2, before and after the transfer tube switch, the voltage of floating diffusion region FD is respectively Vfd1 and Vfd2, before and after the transfer tube switch voltage difference between Vsfd and Vfd a numerical value is arranged is Δ V ' [Δ V '=(Vsfd2-Vfd2)-(Vsfd1-Vfd1)=Vfd1-Vfd2+Vsfd2-Vsfd1], because Vsfd together changes along same trend with Vfd, so Δ V '＜Δ V, being used for so the required electric charge of compensation Δ V ' will be less than the required electric charge of general structure, therefore producing the required total electrical charge number of identical charges voltage gain will correspondingly reduce, identical photogenerated charge in like manner, electric charge-the voltage gain that produces will be larger, the corresponding performance of cmos image sensor that also just can improve.
On the other hand, with reference to figure 2, in prior art, in pixel layout, the drain electrode unification that pipe SF is followed in the source of same row pixel is connected to input lead 11, and the source electrode unification is connected to output line 12.The input lead 11, the output line 12 that are positioned at the pixel of same row are adjacent, and both close together produce electric capacity, and this electric capacity can exert an influence to output voltage.
With reference to figure 4 and Fig. 5, the cmos image sensor of the utility model specific embodiment, in pixel layout, the drain electrode unification of following pipe SF1 in first source that lists is connected to input lead 21, and the source electrode unification is connected to output line 22.Due to, in the utility model, input voltage on input lead 21 is namely followed the voltage of the source electrode output of managing SF2 from the second source and the output voltage on output line 22 changes along same trend, therefore power supply noise also can correspondingly reduce by the impact of electric capacity between input lead 21 and output line 22 on the output voltage V out of signal output part, thereby can further improve the performance of cmos image sensor.
Although the utility model with preferred embodiment openly as above; but it is not to limit the utility model; any those skilled in the art are not within breaking away from spirit and scope of the present utility model; can utilize method and the technology contents of above-mentioned announcement to make possible change and modification to technical solutions of the utility model; therefore; every content that does not break away from technical solutions of the utility model; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection range of technical solutions of the utility model according to technical spirit of the present utility model.
Claims (6)
1. an imageing sensor, is characterized in that, comprises input power, input lead, and a plurality of pixels that are arranged in array, each row pixel column comprises: one or more pixels; Each row pixel shares input power, input lead, shared signal output;
Each pixel comprises: pipe is followed in the first source, and the first source is followed the pipe source electrode and is electrically connected to described signal output part; Floating diffusion region, the grid of following pipe with described the first source is electrically connected to; Light sensitive diode; Transfer tube, its drain electrode is described floating diffusion region, its source electrode is described light sensitive diode;
Described imageing sensor also comprises a plurality of voltage compensating circuits, the corresponding voltage compensating circuit of each row pixel, each voltage compensating circuit comprises input and output, described input is used for being electrically connected to described input power, described output and described the first source are followed the pipe drain electrode and be electrically connected to, the acting as of voltage compensating circuit: when imageing sensor is worked, the variation tendency of described voltage compensating circuit output output voltage is identical with the variation tendency of described signal output part voltage.
2. imageing sensor as claimed in claim 1, is characterized in that, also comprises gating circuit, is used for the pixel of gating work.
3. imageing sensor as claimed in claim 1, is characterized in that, in each row pixel, each pixel the first source is followed the pipe drain electrode and shared input lead and be electrically connected to the voltage compensating circuit output.
4. imageing sensor as claimed in claim 1, it is characterized in that, described voltage compensating circuit is that pipe is followed in the second source, the drain electrode that pipe is followed in described the second source is the input of described voltage compensating circuit, the source electrode that pipe is followed in described the second source is the output of described voltage compensating circuit, and the grid that pipe is followed in described the second source is electrically connected to described signal output part.
5. imageing sensor as claimed in claim 1, is characterized in that, also comprises: reset transistor is electrically connected to described floating diffusion region.
6. imageing sensor as claimed in claim 1, is characterized in that, described imageing sensor is the cmos image sensor of 4T structure or 5T structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220686042 CN203014990U (en) | 2012-12-12 | 2012-12-12 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220686042 CN203014990U (en) | 2012-12-12 | 2012-12-12 | Image sensor |
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| CN203014990U true CN203014990U (en) | 2013-06-19 |
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| CN 201220686042 Withdrawn - After Issue CN203014990U (en) | 2012-12-12 | 2012-12-12 | Image sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102984473A (en) * | 2012-12-12 | 2013-03-20 | 格科微电子（上海）有限公司 | Image sensor and method for increasing charge-voltage gain of image sensor |
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- 2012-12-12 CN CN 201220686042 patent/CN203014990U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102984473A (en) * | 2012-12-12 | 2013-03-20 | 格科微电子（上海）有限公司 | Image sensor and method for increasing charge-voltage gain of image sensor |
| CN102984473B (en) * | 2012-12-12 | 2015-04-29 | 格科微电子（上海）有限公司 | Image sensor and method for increasing charge-voltage gain of image sensor |
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Granted publication date: 20130619 Effective date of abandoning: 20150429 |