CN202979448U - High-frequency X-ray machine with IGBT inversion protection device - Google Patents

High-frequency X-ray machine with IGBT inversion protection device Download PDF

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Publication number
CN202979448U
CN202979448U CN 201220727394 CN201220727394U CN202979448U CN 202979448 U CN202979448 U CN 202979448U CN 201220727394 CN201220727394 CN 201220727394 CN 201220727394 U CN201220727394 U CN 201220727394U CN 202979448 U CN202979448 U CN 202979448U
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CN
China
Prior art keywords
frequency
igbt
resonance circuit
protection device
resonant circuit
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201220727394
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Chinese (zh)
Inventor
吴基玉
李仁权
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHONGQING HUALUN HONGLI INDUSTRIAL Co Ltd
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CHONGQING HUALUN HONGLI INDUSTRIAL Co Ltd
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Priority to CN 201220727394 priority Critical patent/CN202979448U/en
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Publication of CN202979448U publication Critical patent/CN202979448U/en
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Abstract

The utility model discloses a high-frequency X-ray machine with an IGBT inversion protection device, which comprises an LC resonance circuit and a high-frequency high-voltage transformer T, wherein the LC resonance circuit is connected with the IGBT inversion output end; the LC resonance circuit is an LC serial resonance circuit; the high-frequency high-voltage transformer T is electrically connected with the LC resonance circuit; and the capacitor in the LC resonance circuit is a non-inductive capacitor. The high-frequency X-ray machine with the IGBT inversion protection device has the beneficial effects that the LC resonance circuit is connected in series onto the IGBT inversion output end, the inductor in the resonance circuit and the capacitor make up an oscillating circuit, the LC resonance circuit can protect the IGBT in the conversion under certain frequency, and the problem that the IGBT of the high-frequency X-ray machine in the inversion is likely to fail can be solved.

Description

High-frequency X-ray with IGBT inversion protection device
Technical field
The utility model relates to high-frequency X-ray field, particularly a kind of IGBT inversion protection circuit to high-frequency X-ray.
Background technology
High-frequency X-ray can be widely used in the various fields such as medical examination, historical relic detection, verification retrieval, food safety detection, seed vitality detection, board failure detection, disaster field treatment inspection, high-frequency X-ray adopts the IGBT switch to control the high-frequency inverter structure, and 220V high-frequency alternating current on power panel is elevated to the 6KV high-frequency alternating current.With this high-frequency alternating current multiplication rectification, form high direct voltage.
Wherein inverter circuit is the core of whole controller, and the circuit that generally adopts one or two high power device and commutation afterflow protection absorber element to form carries out copped wave to an end of high-tension transformer and controls, and makes high-tension transformer produce high pressure.The operation principle of tradition inverter circuit (inverter) is by the turning on and off of software control IGBT, but the shortcoming of this mode just is, software fault easily occurs, causes the straight-through and aircraft bombing of device for power switching.
Therefore need a kind of high-frequency X-ray with inversion protection circuit simple and compact for structure, with low cost.
The utility model content
In view of this, technical problem to be solved in the utility model is to provide a kind of high-frequency X-ray with inversion protection circuit simple and compact for structure, with low cost.
The utility model is achieved through the following technical solutions:
The high-frequency X-ray with IGBT inversion protection device that the utility model provides comprises the LC resonant circuit, and described LC resonant circuit is connected with the IGBT inverting output terminal, and the other end is connected with high voltage silicon stack.
Further, described LC resonant circuit is the LC series resonant circuit.
Further, described LC resonant circuit is the LC antiresonant circuit.
Further, also comprise high frequency high voltage transformer T, described high frequency high voltage transformer T is electrically connected to described high frequency high voltage transformer T with the LC resonant circuit and is connected with high voltage silicon stack.
Further, the electric capacity in described LC resonant circuit is noninductive electric capacity.
The beneficial effects of the utility model are: the utility model adopts at IGBT inverting output terminal series LC resonant circuit; in this resonant circuit, inductance and electric capacity form oscillating circuit; under certain frequency; this LC resonant circuit can be protected the IGBT in inversion, has solved the high-frequency X-ray phenomenon that IGBT easily breaks down in inversion.
Description of drawings
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing, the utility model is described in further detail, wherein:
The structure chart with the high-frequency X-ray of IGBT inversion protection device that Fig. 1 provides for the utility model embodiment.
Embodiment
Hereinafter with reference to accompanying drawing, preferred embodiment of the present utility model is described in detail.Should be appreciated that preferred embodiment only for the utility model is described, rather than in order to limit protection range of the present utility model.
The structure chart with the high-frequency X-ray of IGBT inversion protection device that Fig. 1 provides for the utility model embodiment; as shown in the figure: the high-frequency X-ray with IGBT inversion protection device that the utility model provides; comprise LC resonant circuit 1; described LC resonant circuit is connected with IGBT inverting output terminal 2; the other end is connected with high voltage silicon stack 3, also can be connected with high voltage silicon stack 3 by a transformer again.Described LC resonant circuit is the LC series resonant circuit.Described LC resonant circuit is the LC antiresonant circuit.
Also comprise high frequency high voltage transformer T, described high frequency high voltage transformer T is electrically connected to described high frequency high voltage transformer T with the LC resonant circuit and is connected with high voltage silicon stack.Electric capacity in described LC resonant circuit is noninductive electric capacity.
Explanation is at last, above embodiment is only unrestricted in order to the technical solution of the utility model to be described, although by the utility model being described with reference to preferred embodiment of the present utility model, but those of ordinary skill in the art is to be understood that, can make various changes to it in the form and details, and not depart from the spirit and scope of the present utility model that appended claims limits.

Claims (5)

1. with the high-frequency X-ray of IGBT inversion protection device, it is characterized in that: comprise the LC resonant circuit, described LC resonant circuit is connected with the IGBT inverting output terminal, and the other end is connected with high voltage silicon stack.
2. the high-frequency X-ray with IGBT inversion protection device according to claim 1, it is characterized in that: described LC resonant circuit is the LC series resonant circuit.
3. the high-frequency X-ray with IGBT inversion protection device according to claim 1, it is characterized in that: described LC resonant circuit is the LC antiresonant circuit.
4. the high-frequency X-ray with IGBT inversion protection device according to claim 1; it is characterized in that: also comprise high frequency high voltage transformer T; described high frequency high voltage transformer T is electrically connected to the LC resonant circuit, and described high frequency high voltage transformer T is connected with high voltage silicon stack.
5. the high-frequency X-ray with IGBT inversion protection device according to claim 1, it is characterized in that: the electric capacity in described LC resonant circuit is noninductive electric capacity.
CN 201220727394 2012-12-26 2012-12-26 High-frequency X-ray machine with IGBT inversion protection device Expired - Lifetime CN202979448U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220727394 CN202979448U (en) 2012-12-26 2012-12-26 High-frequency X-ray machine with IGBT inversion protection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220727394 CN202979448U (en) 2012-12-26 2012-12-26 High-frequency X-ray machine with IGBT inversion protection device

Publications (1)

Publication Number Publication Date
CN202979448U true CN202979448U (en) 2013-06-05

Family

ID=48520463

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220727394 Expired - Lifetime CN202979448U (en) 2012-12-26 2012-12-26 High-frequency X-ray machine with IGBT inversion protection device

Country Status (1)

Country Link
CN (1) CN202979448U (en)

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CX01 Expiry of patent term

Granted publication date: 20130605

CX01 Expiry of patent term