CN202945363U - Single crystal furnace - Google Patents
Single crystal furnace Download PDFInfo
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- CN202945363U CN202945363U CN 201220545367 CN201220545367U CN202945363U CN 202945363 U CN202945363 U CN 202945363U CN 201220545367 CN201220545367 CN 201220545367 CN 201220545367 U CN201220545367 U CN 201220545367U CN 202945363 U CN202945363 U CN 202945363U
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- single crystal
- felt
- protection plate
- crystal growing
- cured blanket
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Abstract
The utility model provides a single crystal furnace. The single crystal furnace comprises a furnace body, a crucible support rod, a cured blanket protection disk and a cured blanket insulation board, wherein a through hole allowing the the crucible support rod, an electrode of the single crystal furnace and an air exhaust sheath to penetrate is formed in the cured blanket protection disk, the cured blanket insulation board is arranged at the bottom of the cured blanket protection disk, and a support rod hole allowing the crucible support rod to penetrate is formed in the cured blanket insulation board. The single crystal furnace provided by the utility model has the characteristics that a hearth protection disk and an insulation board which are made of a graphite material in the prior art are replaced by the cured blanket protection disk and the cured blanket insulation board which are made of a cured blanket material, the heat loss in a heat field in the furnace body is reduced since the heat insulation performance of the cured blanket is superior to that of the graphite, the electricity consumption of a heater is reduced, and the production cost is also obviously reduced.
Description
Technical field
The utility model relates to technical field of solar batteries, more particularly, relates to a kind of single crystal growing furnace.
Background technology
The main raw of making solar battery sheet generally comprises polysilicon and silicon single crystal, compares with polysilicon, and silicon single crystal enjoys people's favor because of its higher photoelectric transformation efficiency.
As Figure 1-Figure 4, the main production equipments of silicon single crystal is single crystal growing furnace, single crystal growing furnace generally comprises body of heater 01, is arranged on the insulated tank 02 at inboard wall of furnace body place, well heater 03, be used for support crucible 04 crucible pressure pin 05, be arranged on furnace bottom protection plate 06 and the warming plate 07 of the interior thermal field of body of heater 01 bottom, wherein, furnace bottom protection plate 06 and warming plate 07 are disk-like member.In the production process of silicon single crystal, well heater 03 produces heat by consuming electric energy, to guarantee that the inner thermal field of body of heater 01 maintains suitable temperature, make silicon single crystal to produce smoothly, but, in the prior art, furnace bottom protection plate 06 and warming plate 07 all adopt the graphite material manufacturing, its heat-proof quality is relatively relatively poor, so just caused the interior heat loss of thermal field more, and in order to keep the temperature in thermal field, well heater 03 just must consume more electric energy to produce heat, makes production cost greatly increase.
In sum, how providing a kind of single crystal growing furnace, to realize improving the heat-proof quality of furnace bottom protection plate and warming plate, reduce heat loss to save production cost, is present those skilled in the art's problem demanding prompt solution.
The utility model content
In view of this, the utility model provides a kind of single crystal growing furnace, has improved the heat-proof quality of furnace bottom protection plate and warming plate, reduces heat loss to save production cost.
In order to achieve the above object, the utility model provides following technical scheme:
A kind of single crystal growing furnace comprises body of heater, crucible pressure pin, and it also comprises:
Be arranged on the curing felt protection plate of described body of heater intracavity space bottom, be provided with on described curing felt protection plate and allow described crucible pressure pin, the electrode of described single crystal growing furnace and the through hole that exhaust jacket passes;
Be arranged on the curing felt warming plate of described curing felt protection plate bottom, be provided with the pressure pin hole that allows described crucible pressure pin to pass on described curing felt warming plate.
Preferably, in above-mentioned single crystal growing furnace, the disk-like member that described curing felt protection plate is formed in one.
Preferably, in above-mentioned single crystal growing furnace, the disk-like member of described curing felt protection plate for being spliced by a plurality of separate curing felt pieces.
Preferably, in above-mentioned single crystal growing furnace, the bottom surface of described curing felt warming plate is arc.
Preferably, in above-mentioned single crystal growing furnace, the bottom surface that forms after described curing felt protection plate and the assembling of described curing felt warming plate is arc.
In the single crystal growing furnace that the utility model provides, curing felt protection plate is arranged on the bottom of body of heater intracavity space, solidify the felt warming plate and be arranged on the bottom of solidifying the felt protection plate, the crucible pressure pin passes and solidifies the felt protection plate and solidify through hole and pressure pin hole on the felt warming plate, the electrode of single crystal growing furnace and exhaust jacket pass the through hole that solidifies the felt protection plate, make heat in thermal field can't be diffused into the furnace bottom place, to realize heat insulation to bottom of furnace body.The single crystal growing furnace that the utility model provides, adopt the curing felt protection plate of solidifying felt material and solidify the felt warming plate, the furnace bottom protection plate and the warming plate that replace graphite material of the prior art, the heat-proof quality that is better than graphite by solidifying felt, reduce the heat loss in thermal field in body of heater, reduce the consumption of well heater to electric energy, reduced significantly production cost.In addition, due to the curing felt material that is provided with between well heater and body of heater for insulation, so adopt the curing felt protection plate of solidifying the felt material manufacturing and solidify the felt warming plate, can not affect the quality of production of silicon single crystal, also can not increase the purchase cost in production process.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or description of the Prior Art, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The structural representation of the single crystal growing furnace that Fig. 1 provides for prior art;
Fig. 2 is the partial enlarged drawing of Fig. 1;
The structural representation of the furnace bottom protection plate that Fig. 3 provides for prior art;
The structural representation of the warming plate that Fig. 4 provides for prior art;
The main pseudosection of the curing felt protection plate that Fig. 5 provides for the utility model embodiment;
The main pseudosection of the curing felt warming plate that Fig. 6 provides for the utility model embodiment.
Fig. 7 is for solidifying felt protection plate and the wiring layout that solidifies the felt warming plate.
In above Fig. 1-Fig. 7:
Solidify felt protection plate 1, through hole 2, solidify felt warming plate 3, pressure pin hole 4.
Embodiment
In order further to understand the utility model, below in conjunction with embodiment, the utility model preferred implementation is described, but should be appreciated that these describe just in order to further illustrate feature and advantage of the present utility model, rather than to the restriction of the utility model claim.
The utility model provides a kind of single crystal growing furnace, has improved the heat-proof quality of furnace bottom protection plate and warming plate, reduces heat loss to save production cost.
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that obtains under the creative work prerequisite, all belong to the scope of the utility model protection.
As Fig. 5-shown in Figure 7, the single crystal growing furnace that the utility model provides comprises body of heater, crucible pressure pin, and it also comprises:
Be arranged on the curing felt protection plate 1 of body of heater intracavity space bottom, be provided with on curing felt protection plate 1 and allow crucible pressure pin, the electrode of single crystal growing furnace and the through hole 2 that exhaust jacket passes;
Be arranged on the curing felt warming plate 3 that solidifies felt protection plate 1 bottom, solidify and be provided with the pressure pin hole 4 that allows that the crucible pressure pin passes on felt warming plate 3.
In the single crystal growing furnace that the present embodiment provides, curing felt protection plate 1 is arranged on the bottom of body of heater intracavity space, solidify felt warming plate 3 and be arranged on the bottom of solidifying felt protection plate 1, the crucible pressure pin passes and solidifies felt protection plate 1 and solidify through hole 2 and pressure pin hole 4 on felt warming plate 3, the electrode of single crystal growing furnace and exhaust jacket pass the through hole 2 that solidifies felt protection plate 1, make heat in thermal field can't be diffused into the furnace bottom place, to realize heat insulation to bottom of furnace body.
The single crystal growing furnace that the present embodiment provides, adopt the curing felt protection plate 1 of solidifying felt material and solidify felt warming plate 3, the furnace bottom protection plate and the warming plate that replace graphite material of the prior art, the heat-proof quality that is better than graphite by solidifying felt, reduce the heat loss in thermal field in body of heater, reduce the consumption of well heater to electric energy, reduced significantly production cost.In addition, due to the curing felt material that is provided with between well heater and body of heater for insulation, solidify so adopt curing felt protection plate 1 and the curing felt warming plate 3 that felt material is made, can not affect the quality of production of silicon single crystal, also can not increase the purchase cost in production process.
In order further to optimize technique scheme, in the single crystal growing furnace that the present embodiment provides, solidify the disk-like member that felt protection plate 1 is formed in one.Concrete; in the present embodiment, to solidify felt protection plate 1 in order coordinating with the miscellaneous part of single crystal growing furnace, it to be arranged as a whole disk-like member; have the through hole 2 that is passed by crucible pressure pin, electrode and exhaust jacket on it, and then make it play the effect of protection furnace bottom.This kind structure can be tighter furnace bottom is protected, and complete processing is simple, improvement cost is lower.
Corresponding with above-mentioned integrated design, solidify felt protection plate 1 and can also be the disk-like member that is spliced by a plurality of separate curing felt pieces.This kind mode is exactly that curing felt protection plate 1 with integral body is divided into a plurality of separate plates, and can interconnect between each plate, connects in use to be integrated, and is arranged on the bottom of single crystal growing furnace intracavity space.The curing felt protection plate 1 of this type is convenient to installation and removal, can save certain operating time, can improve to a certain extent the production efficiency of silicon single crystal.
As shown in Figure 6, the bottom surface of curing felt warming plate 3 is arc.The bottom surface of solidifying felt is set to arc, can reduce the usage quantity of solidifying felt under the prerequisite that does not affect heat-proof quality, and then reduce production costs.
As shown in Figure 7, solidifying felt protection plate 1 is arc with solidifying the bottom surface that forms after 3 assemblings of felt warming plate.This kind set-up mode can be according to the distribution of thermograde in thermal field, heat bottom thermal field is more reasonably isolated, reduce heat scattering and disappearing to the body of heater outside, make the temperature in thermal field to keep for a long time, make well heater need not to produce more heat and keep temperature, reduce the consumption of electric energy, reduced production cost.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the utility model.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from spirit or scope of the present utility model, realization in other embodiments.Therefore, the utility model will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (5)
1. a single crystal growing furnace, comprise body of heater, crucible pressure pin, it is characterized in that, also comprises:
Be arranged on the curing felt protection plate (1) of described body of heater intracavity space bottom, be provided with on described curing felt protection plate (1) and allow described crucible pressure pin, the electrode of described single crystal growing furnace and the through hole (2) that exhaust jacket passes;
Be arranged on the curing felt warming plate (3) of described curing felt protection plate (1) bottom, be provided with the pressure pin hole (4) that allows described crucible pressure pin to pass on described curing felt warming plate (3).
2. single crystal growing furnace according to claim 1, is characterized in that, the disk-like member that described curing felt protection plate (1) is formed in one.
3. single crystal growing furnace according to claim 1, is characterized in that, the disk-like member of described curing felt protection plate (1) for being spliced by a plurality of separate curing felt pieces.
4. single crystal growing furnace according to claim 1, is characterized in that, the bottom surface of described curing felt warming plate (3) is arc.
5. single crystal growing furnace according to claim 4, is characterized in that, described curing felt protection plate (1) is arc with the bottom surface of the rear formation of described curing felt warming plate (3) assembling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220545367 CN202945363U (en) | 2012-10-23 | 2012-10-23 | Single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220545367 CN202945363U (en) | 2012-10-23 | 2012-10-23 | Single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202945363U true CN202945363U (en) | 2013-05-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220545367 Expired - Fee Related CN202945363U (en) | 2012-10-23 | 2012-10-23 | Single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202945363U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111778550A (en) * | 2020-07-16 | 2020-10-16 | 宁夏协鑫晶体科技发展有限公司 | Furnace bottom heater for single crystal furnace |
-
2012
- 2012-10-23 CN CN 201220545367 patent/CN202945363U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111778550A (en) * | 2020-07-16 | 2020-10-16 | 宁夏协鑫晶体科技发展有限公司 | Furnace bottom heater for single crystal furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171020 Address after: 835800 A District, Xinyuan County Industrial Park, the Xinjiang Uygur Autonomous Region, Yili Patentee after: Xinjiang Ke Ke Energy Co., Ltd. Address before: 334100, Shangrao Economic Development Zone, Jiangxi Province Road, No. 1 Patentee before: Jinko Solar Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130522 Termination date: 20201023 |