CN202929336U - Thin film transistor-liquid crystal display (TFT-LCD) array substrate and display device - Google Patents
Thin film transistor-liquid crystal display (TFT-LCD) array substrate and display device Download PDFInfo
- Publication number
- CN202929336U CN202929336U CN 201220669139 CN201220669139U CN202929336U CN 202929336 U CN202929336 U CN 202929336U CN 201220669139 CN201220669139 CN 201220669139 CN 201220669139 U CN201220669139 U CN 201220669139U CN 202929336 U CN202929336 U CN 202929336U
- Authority
- CN
- China
- Prior art keywords
- electrode
- grid line
- tft
- array base
- base palte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Liquid Crystal (AREA)
Abstract
The embodiment of the utility model provides a thin film transistor-liquid crystal display (TFT-LCD) array substrate and a display device, and relates to the technical field of liquid crystal display, wherein the phenomenon of residual images can be improved, and the display quality of an LCD device is improved. The TFT-LCD array substrate comprises a transparent substrate, a public electrode line, grid lines, a data line, a pixel electrode, a public electrode, a first TFT and a second TFT, wherein the public electrode line, the grid lines and the data line are arranged on the transparent substrate. After being powered up, the pixel electrode and the public electrode form a multidimensional electric field; the second TFT comprises a second grid electrode, a second source electrode and a second drain electrode; the second grid electrode is electrically connected with a n-th row grid line which is the grid line at any row other than the last row; the second drain electrode is correspondingly electrically connected with the pixel electrode of the first TFT driven by a (n+1)th row grid line; the second drain electrode is electrically connected with the public electrode line; and in a frame grid line scanning process of the array substrate, the n-th row grid line is scanned before the (n+1)th row grid line is scanned.
Description
Technical field
The utility model relates to technical field of liquid crystal display, relates in particular to a kind of TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Transistor-LCD) array base palte and display device.
Background technology
At present, liquid crystal display has been widely used on the various electronical display products such as computer, TV, mobile phone, and people also more and more pay close attention to the problem that liquid crystal display exists in procedure for displaying.May there be a lot of problems in liquid crystal display in procedure for displaying, image retention wherein occurring is one of problem.
When liquid crystal display is carried out image transitions or shutdown, because the reasons such as the coupling of memory capacitance and floating (suspension) electrode can make a lot of electric charges of accumulation on pixel electrode, these electric charges can make between described pixel electrode and public electrode and form electric field, make the liquid crystal between described pixel electrode and public electrode keep rollover states, it is image retention that display screen also has a upper residual image of the moment, along with these electric charges slowly disappear, mesomorphic state changes gradually, and the image retention on display screen also can slowly disappear; The appearance of image retention has had a strong impact on the display quality of liquid crystal display.
The utility model content
Embodiment of the present utility model provides a kind of TFT-LCD array base palte and display device, can improve afterimage phenomena, improves the display quality of liquid crystal display.
For achieving the above object, embodiment of the present utility model adopts following technical scheme:
The utility model embodiment provides a kind of TFT-LCD array base palte, transparency carrier, be arranged on the public electrode wire on described transparency carrier, grid line and data line on described transparency carrier arranged in a crossed manner is arranged on interior pixel electrode, public electrode and the first film transistor of pixel region that described grid line and data line limit; Wherein said pixel electrode and described public electrode form multi-dimensional electric field after powering up; Described the first film transistor comprises first grid, the first source electrode and the first drain electrode, and described first grid is connected with described grid line, and described the first source electrode is connected with described data line, and described the first drain electrode is connected with described pixel electrode; Described array base palte also comprises: the second thin film transistor (TFT), described the second thin film transistor (TFT) comprise second grid, the second source electrode and the second drain electrode;
Described second grid is electrically connected to the capable grid line of n, and the capable grid line of described n is the arbitrary row grid line except last column grid line; The transistorized pixel electrode of the first film with the capable grid line of n+1 drives corresponding to described the second drain electrode is electrically connected to; Described the second source electrode is electrically connected to described public electrode wire; Wherein, in a frame grid line scanning process of described array base palte, the capable grid line of described n first scans than the capable grid line of described n+1.
Preferably, the number of the second thin film transistor (TFT) of the capable grid line driving of described n is identical with the transistorized number of the first film that the capable grid line of described n+1 drives; The transistorized pixel electrode of the first film with the capable grid line of n+1 drives corresponding to described the second drain electrode is electrically connected to and comprises: the pixel electrode that each the first film transistor that the second drain electrode of each described the second thin film transistor (TFT) that the capable grid line of described n drives drives with the capable grid line of n+1 correspondingly is corresponding is electrically connected to.
Optionally, the transistorized pixel electrode of the first film with the capable grid line of n+1 drives corresponding to described the second drain electrode is electrically connected to and comprises: transistorized the first drain electrode of the first film with the capable grid line of n+1 drives corresponding to described the second drain electrode is connected, and perhaps the corresponding transistorized pixel electrode of the first film with the capable grid line of n+1 drives is connected.
Optionally, described array base palte also comprises: the public electrode that is electrically connected to described public electrode wire; Described the second source electrode is electrically connected to described public electrode wire and comprises: described the second source electrode is connected with public electrode.
The utility model embodiment provides a kind of display device, comprises the color membrane substrates after box, liquid crystal layer and array base palte, and described array base palte is above-mentioned TFT-LCD array base palte.
TFT-LCD array base palte and display device that the utility model embodiment provides, by second second grid of thin film transistor (TFT) and being electrically connected to of the capable grid line of described n, make display device can drive described the second thin film transistor (TFT) work, source electrode and the drain electrode of described the second thin film transistor (TFT) of conducting when the capable grid line of scanning n; And then pixel electrode corresponding to the first film transistor that drives with the capable grid line of n+1 respectively of the source electrode by described the second thin film transistor (TFT) and drain electrode and the electrical connection of public electrode wire, thereby corresponding pixel electrode and the public electrode of the first film transistor that the capable grid line of the described n+1 of conducting drives, making the electric potential difference between described pixel electrode and public electrode is 0, suppressed the liquid crystal deflection that causes due to charge accumulated on the pixel electrode, effectively improve afterimage phenomena, improved the display quality of display device.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or description of the Prior Art, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The vertical view of a kind of TFT-LCD array base palte that Fig. 1 provides for the utility model embodiment;
The cross-sectional view of a kind of TFT-LCD array base palte that Fig. 2 provides for the utility model embodiment;
The cross-sectional view of the another kind of TFT-LCD array base palte that Fig. 3 provides for the utility model embodiment;
The equivalent circuit diagram of a kind of TFT-LCD array base palte that Fig. 4 provides for the utility model embodiment.
Reference numeral:
1-the first film transistor, 2-the second thin film transistor (TFT), 3-pixel electrode, 4-public electrode, 51-the first passivation layer, 52-the second passivation layer, 6-gate insulation layer, 7-active layer, 8-grid line, 9-data line; The 11-first grid, 12-the first source electrode, 13-the first drain electrode, 21-second grid, 22-the second source electrode, 23-the second drain electrode, the capable grid line of 81-n, the capable grid line of 82-n+1.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that obtains under the creative work prerequisite, all belong to the scope of the utility model protection.
As shown in Figure 1 and Figure 2, the utility model embodiment provides a kind of TFT-LCD array base palte, described array base palte comprises: transparency carrier, be arranged on the public electrode wire on described transparency carrier, grid line 8 and data line 9 on described transparency carrier arranged in a crossed manner, be arranged on the interior pixel electrode 3 of pixel region that described grid line 8 and data line 9 limit, public electrode 4 and the first film transistor 1; Wherein, described pixel electrode 3 and described public electrode 4 form multi-dimensional electric field after powering up; Described the first film transistor 1 comprises first grid 11, the first source electrode 12 and the first drain electrode 13, and described first grid 11 is connected with described grid line 8, and described the first source electrode 12 is connected with described data line 9, and described the first drain electrode 13 is connected with described pixel electrode 3.In addition, as shown in Figure 2, described array base palte also comprises: gate insulation layer 6, active layer 7.
Described array base palte also comprises: the second thin film transistor (TFT) 2, described the second thin film transistor (TFT) 2 comprise second grid 21, the second source electrode 22 and the second drain electrode 23.Wherein, described second grid 21 is electrically connected to the capable grid line of n, and the capable grid line of described n is the arbitrary row grid line except last column grid line.The pixel electrode 3 corresponding to the first film transistor with the capable grid line driving of n+1 of described the second drain electrode 23 correspondences is electrically connected to; Described the second source electrode 22 is electrically connected to described public electrode wire (not shown).Usually, public electrode wire can with grid line, grid by the same layer metallic film, form by composition technique; Certainly, public electrode wire also can with data line, source electrode, drain electrode by the same layer metallic film, form by composition technique.
Here need to prove, thin film transistor (TFT) has three electrodes, and one of them electrode that applies cut-in voltage is grid, and another two are respectively source electrode and drain electrode, because the effect of source electrode and drain electrode is identical, therefore source electrode and drain electrode do not distinguish.Be described in for convenience in the utility model embodiment, what will be connected with pixel electrode is called drain electrode, for example: first drain electrode the 13, second drain electrode 23; Another electrode is called source electrode, the first source electrode 12 that for example is connected with data line, the second source electrode 22 that is electrically connected to public electrode wire.
In all embodiment of the utility model, two patterns " connection " refer to: two patterns directly contact, and two patterns " electrical connection " refer to: when energising, two patterns are communicated with, and these two patterns can directly contact, and also can connect together by other electric conductors.
On display device, every demonstration one two field picture all needs the grid line scanister every row grid line on scanning display apparatus successively, namely carry out a frame grid line scanning process, for example, the sweep frequency of grid line scanister is 64Hz, be the grid line scanning process that per second need to carry out 64 frames, the display device per second can show 64 two field pictures.In the utility model embodiment, the next line grid line that the capable grid line of n+1 is the capable grid line of n, and in each frame grid line scanning process, the capable grid line of described n always first scans than the capable grid line of described n+1.
As shown in Figure 4, be the equivalent circuit diagram of described TFT-LCD array base palte, described the second thin film transistor (TFT) 2 is connected with the capable grid line 81 of described n, during the capable grid line of scanning n, described the second thin film transistor (TFT) work, source electrode and the drain electrode of described the second thin film transistor (TFT) 2 of conducting; Public electrode and pixel electrode that the first film transistor 1 that the source electrode of described the second thin film transistor (TFT) 2 and drain electrode drive with the capable grid line of n+1 82 respectively is corresponding are electrically connected to, V
comBe the voltage of public electrode, V
PixelVoltage for pixel electrode.The source electrode of described the second thin film transistor (TFT) 2 and the conducting of drain electrode make V
Pixel=V
com, public electrode and the electric potential difference between pixel electrode of the first film transistor 1 correspondence that the capable grid line 82 of described n+1 drives are 0.So just suppress the liquid crystal deflection that causes due to charge accumulated on the pixel electrode, effectively improved afterimage phenomena, improved the display quality of display device.
In the utility model embodiment, all be connected with the second thin film transistor (TFT) on the capable grid line of n except last column grid line, the transistorized pixel electrode of the first film with the capable grid line of n+1 drives corresponding to the second drain electrode of described the second thin film transistor (TFT) is electrically connected to.
Preferably, as shown in Figure 1, the number of the second thin film transistor (TFT) that the capable grid line of described n drives is identical with the transistorized number of the first film that the capable grid line of described n+1 drives; The pixel electrode that each the first film transistor that the second drain electrode of each described the second thin film transistor (TFT) that the capable grid line of described n drives drives with the capable grid line of n+1 correspondingly is corresponding is electrically connected to.
like this, display device is when the capable grid line of scanning n, all pixel electrodes corresponding to all the first film transistors that the capable grid line of n+1 drives all with the public electrode conducting, the electric charge that accumulates on described pixel electrode all is discharged on public electrode, thereby making pixel electrode corresponding to the capable grid line of n+1 and the electric potential difference between public electrode is zero, realize pixel electrode " zero clearing ", suppress the charge accumulated on pixel electrode corresponding to the capable grid line of n+1, make so described display device in scanning current line grid line, the electric charge of accumulating on all pixel electrodes that the next line grid line is corresponding is " zero clearing " all, improved better image retention, improved the display quality of display device.
The mode that the transistorized pixel electrode 3 of the first film with the capable grid line of n+1 drives of described the second drain electrode 23 correspondences is electrically connected to:
Optional (not shown), transistorized first drain electrode 13 of the first film with the capable grid line of n+1 drives of the second drain electrode 23 correspondences of the second thin film transistor (TFT) that the capable grid line of n drives is connected; Because described the first drain electrode 13 generally is connected by the via hole on the second passivation layer 52 with described pixel electrode 3, therefore described the second drain electrode 23 is electrically connected to described pixel electrode 3 by described the first drain electrode 13.
Perhaps optional, as shown in Figure 1, the pixel electrode 3 corresponding to the first film transistor 1 with the capable grid line driving of n+1 of the second drain electrode 23 correspondences of the second thin film transistor (TFT) that the capable grid line of n drives connects; Example, as shown in Figure 2, described the second drain electrode 23 can directly be connected with pixel electrode 3 by the via hole on the second passivation layer 52, only needs to use composition technique to do a via hole on the second passivation layer 52 and gets final product.
The TFT-LCD array base palte that the utility model embodiment provides goes for AD-SDS (Advanced-Super Dimensional Switching, referred to as ADS, senior super dimension field switch) production of the liquid crystal indicator of the type such as type, IPS (In Plane Switch, transverse electric field effect) type.The longitudinal electric field that the parallel electric field that the AD-SDS technology produces by pixel electrode edge in same plane and pixel electrode layer and public electrode interlayer produce forms multi-dimensional electric field, make in liquid crystal cell between pixel electrode, directly over electrode, all aligned liquid-crystal molecules can both produce the rotation conversion, thereby to have improved planar orientation be the liquid crystal work efficiency and increased light transmission efficiency.
Above-mentioned which kind of liquid crystal indicator all comprises color membrane substrates and the array base palte that box is shaped.Public electrode and the pixel electrode of ADS type display device and IPS type display device all are arranged on array base palte.Wherein, in accompanying drawing 1,2 be the array base palte that is applied in ADS type display device be that example illustrates, Fig. 3 is that the array base palte in the IPS type display device illustrates as example.
Above-mentioned TFT-LCD array base palte is in the situation that be applied to IPS type display device and ADS type display device, and described TFT-LCD array base palte also comprises: the public electrode that is electrically connected to described public electrode wire; Described the second source electrode is electrically connected to described public electrode wire and comprises: described the second source electrode is connected with public electrode.
As shown in Fig. 1 or 2, in the array base palte of described ADS type display device, the different layer of described public electrode 4 and described pixel electrode 3 arranges, and the electrode that wherein is positioned at the upper strata comprises a plurality of strip electrodes, and the electrode that is positioned at lower floor comprises a plurality of strip electrodes or for plate shaped.Need to prove, no matter be positioned at upper strata or lower floor, as long as the electrode that is electrically connected to public electrode wire just is public electrode, the electrode that the transistorized drain electrode of the first film is electrically connected to is just pixel electrode, that is to say, the electrode that is positioned at the upper strata can be pixel electrode (or public electrode), and the electrode that is positioned at lower floor can be public electrode (or pixel electrode).Example, as shown in Figure 2, the electrode that comprises a plurality of strip electrodes that is positioned at the upper strata is pixel electrode 3, the plate-shaped electrode that is positioned at lower floor is public electrode 4.
Different layer arranges at least two kinds of patterns, and at least two kinds of different layer settings of pattern refer to, double-layer films forms at least two kinds of patterns by composition technique at least respectively.Refer to for two kinds of different layer settings of pattern, by composition technique, respectively form a kind of pattern by double-layer films.For example, the different layer setting of public electrode and pixel electrode refers to: form lower electrode by the ground floor transparent conductive film by composition technique, form upper electrode by second layer transparent conductive film by composition technique, wherein, lower electrode is public electrode (or pixel electrode), and upper electrode is pixel electrode (or public electrode).
As shown in Figure 3, in the array base palte of described IPS type display device, described public electrode 4 and described pixel electrode 3 arrange with layer, described public electrode 4 comprises a plurality of the first strip electrodes, described pixel electrode 3 comprises a plurality of the second strip electrodes, and described the first strip electrode and described the second bar shaped electrode gap arrange.
Arrange at least two kinds of patterns with layer; At least two kinds of patterns refer to layer setting: same film is formed at least two kinds of patterns by composition technique.For example, public electrode and pixel electrode refer to layer setting: form pixel electrode and public electrode by same transparent conductive film by composition technique.Wherein, pixel electrode refers to that the electrode that is electrically connected to data line by switch element (for example, can be thin film transistor (TFT)), public electrode refer to the electrode that is electrically connected to public electrode wire.
The utility model embodiment also provides a kind of method for making of TFT-LCD array base palte, comprising: make forming public electrode wire, grid line and data line, pixel electrode, public electrode, the first film transistor and the second thin film transistor (TFT) on transparency carrier; Wherein said pixel electrode and described public electrode form multi-dimensional electric field after powering up; The described the first film transistor that forms comprises first grid, the first source electrode and the first drain electrode; Described the second thin film transistor (TFT) that forms comprises second grid, the second source electrode and the second drain electrode; The described second grid that forms is electrically connected to the capable grid line of n, and the capable grid line of described n of formation is the arbitrary row grid line except last column grid line; The transistorized pixel electrode of the first film with the capable grid line of n+1 drives corresponding to described the second drain electrode that forms is electrically connected to; Described the second source electrode is electrically connected to described public electrode wire; Wherein, in a frame grid line scanning process of described array base palte, the capable grid line of described n first scans than the capable grid line of described n+1.
Optionally, take the array base palte of ADS type display device shown in Figure 2 as example, its method for making can be with reference to following steps:
S1, make the grid metallic film on transparency carrier, form at least grid line and first grid 11 and second grid 21 by composition technique; Wherein, described second grid 21 is electrically connected to the capable grid line of n.Example, when forming above-mentioned pattern, can also further form the public electrode wire (not shown).
S2, make gate insulation layer 6 on the transparency carrier of described at least formation grid line, first grid 11 and second grid 21.
S3, make semiconductive thin film on the transparency carrier of described formation gate insulation layer 6, and form active layer 7 by composition technique.
S4, make transparent conductive film on the transparency carrier of described formation active layer 7, form public electrode 4 by composition technique.
S5, make the passivation layer film on the transparency carrier of described formation public electrode 4, and form the first passivation layer 51 with via hole by composition technique, this via hole is positioned at the top of public electrode 4.
S6, metallic film is leaked in the making source on the transparency carrier of described formation the first passivation layer 51, forms at least the first source electrode 12, first drain electrode the 13, second source electrode 22, the second drain electrode 23 and data line by composition technique; Described the second source electrode 22 is connected with public electrode 4 by the via hole of described the first passivation layer 51.
S7, make the passivation layer film on the transparency carrier of described at least formation source-drain electrode and data line, and forming the second passivation layer 52 with two via holes by composition technique, two via holes of described the second passivation layer 52 lay respectively at first drain electrode the 13, second drain electrode 23 tops.
S8, make transparent conductive film on the transparency carrier of described formation the second passivation layer 52, form pixel electrode 3 by composition technique, described pixel electrode 3 is connected with described the second drain electrode 23 with described the first drain electrode 13 respectively by the via hole on described the second passivation layer 52.
Above-mentioned method for making is that array base palte take a kind of ADS type display device is as example, array base palte described in the utility model embodiment can also be other ADS types, be not limited to structure type shown in Figure 2, the manufacture craft of the array base palte of other ADS types can be with reference to above-mentioned steps.
Optionally, take the array base palte of IPS type display device shown in Figure 3 as example, its method for making can be with reference to following steps:
Q1, make the grid metallic film on transparency carrier, form at least grid line and first grid 11 and second grid 21 by composition technique; Wherein, described second grid 21 is electrically connected to the capable grid line of n.Example, when forming above-mentioned pattern, can also further form the public electrode wire (not shown).
Q2, make gate insulation layer 6 and active layer 7 on the described transparency carrier that forms at least grid line, public electrode wire, first grid 11 and second grid 21.
Q3, make the passivation layer film on the transparency carrier of described formation active layer 7, and form the first passivation layer 51 by composition technique.
Q4, metallic film is leaked in the making source on the transparency carrier of described formation the first passivation layer 51, forms at least the first source electrode 12, first drain electrode the 13, second source electrode 22, the second drain electrode 23 and data line by composition technique.
Q5, make the passivation layer film on the described transparency carrier that forms at least source, drain electrode and data line, and by second passivation layer 52 of composition technique formation with three via holes, three via holes of described the second passivation layer lay respectively at the top of second drain electrode the 23, second source electrode 22 and the first drain electrode 13.
Q6, make transparent conductive film on the transparency carrier of described formation the second passivation layer 52, form by composition technique pixel electrode 3 and the public electrode 4 that the interval arranges, described pixel electrode 3 is connected with the first drain electrode 13 with described the second drain electrode 23 respectively by the via hole on described the second passivation layer, and described public electrode 4 is connected with described the second source electrode 22 by the via hole on described the second passivation layer 52.
Above-mentioned method for making is that array base palte take a kind of IPS type display device is as example, array base palte described in the utility model embodiment can also be other IPS types, be not limited to structure type shown in Figure 3, the manufacture craft of the array base palte of other IPS types can be with reference to above-mentioned steps.
The utility model embodiment also provides a kind of display device, comprises the color membrane substrates after box, liquid crystal layer and array base palte, and wherein, described array base palte can be any above-mentioned TFT-LCD array base palte.Described display device can have for liquid crystal display, LCD TV, digital camera, mobile phone, panel computer etc. product or the parts of any Presentation Function.
The above; it is only embodiment of the present utility model; but protection domain of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; the variation that can expect easily or replacement are within all should being encompassed in protection domain of the present utility model.Therefore, protection domain of the present utility model should be as the criterion with the protection domain of described claim.
Claims (7)
1. TFT-LCD array base palte, it is characterized in that, comprise: transparency carrier, be arranged on the public electrode wire on described transparency carrier, grid line and data line on described transparency carrier arranged in a crossed manner is arranged on interior pixel electrode, public electrode and the first film transistor of pixel region that described grid line and data line limit; Wherein said pixel electrode and described public electrode form multi-dimensional electric field after powering up; Described the first film transistor comprises first grid, the first source electrode and the first drain electrode, and described first grid is connected with described grid line, and described the first source electrode is connected with described data line, and described the first drain electrode is connected with described pixel electrode;
And described array base palte also comprises: the second thin film transistor (TFT), described the second thin film transistor (TFT) comprise second grid, the second source electrode and the second drain electrode;
Described second grid is electrically connected to the capable grid line of n, and the capable grid line of described n is the arbitrary row grid line except last column grid line;
The transistorized pixel electrode of the first film with the capable grid line of n+1 drives corresponding to described the second drain electrode is electrically connected to;
Described the second source electrode is electrically connected to described public electrode wire; Wherein, in a frame grid line scanning process of described array base palte, the capable grid line of described n first scans than the capable grid line of described n+1.
2. TFT-LCD array base palte according to claim 1, is characterized in that, the number of the second thin film transistor (TFT) that the capable grid line of described n drives is identical with the transistorized number of the first film that the capable grid line of described n+1 drives;
The transistorized pixel electrode of the first film with the capable grid line of n+1 drives corresponding to described the second drain electrode is electrically connected to and comprises:
The pixel electrode that each the first film transistor that the second drain electrode of each described the second thin film transistor (TFT) that the capable grid line of described n drives drives with the capable grid line of n+1 correspondingly is corresponding is electrically connected to.
3. TFT-LCD array base palte according to claim 1, is characterized in that, the transistorized pixel electrode of the first film with the capable grid line of n+1 drives corresponding to described the second drain electrode is electrically connected to and comprises:
Transistorized the first drain electrode of the first film with the capable grid line of n+1 drives corresponding to described the second drain electrode is connected, and perhaps the corresponding transistorized pixel electrode of the first film with the capable grid line of n+1 drives is connected.
4. TFT-LCD array base palte according to claim 1, is characterized in that, also comprises: the public electrode that is electrically connected to described public electrode wire;
Described the second source electrode is electrically connected to described public electrode wire and comprises: described the second source electrode is connected with described public electrode.
5. TFT-LCD array base palte according to claim 4, it is characterized in that, described public electrode and described pixel electrode arrange with layer, described public electrode comprises a plurality of the first strip electrodes, described pixel electrode comprises a plurality of the second strip electrodes, and described the first strip electrode and described the second bar shaped electrode gap arrange.
6. TFT-LCD array base palte according to claim 4, it is characterized in that, the different layer of described public electrode and described pixel electrode arranges, and the electrode that wherein is positioned at the upper strata comprises a plurality of strip electrodes, and the electrode that is positioned at lower floor comprises a plurality of strip electrodes or for plate shaped.
7. a display device, comprise the color membrane substrates after box and array base palte, it is characterized in that, described array base palte is the claims 1～6 described TFT-LCD array base paltes of any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220669139 CN202929336U (en) | 2012-12-06 | 2012-12-06 | Thin film transistor-liquid crystal display (TFT-LCD) array substrate and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220669139 CN202929336U (en) | 2012-12-06 | 2012-12-06 | Thin film transistor-liquid crystal display (TFT-LCD) array substrate and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202929336U true CN202929336U (en) | 2013-05-08 |
Family
ID=48219280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220669139 Expired - Lifetime CN202929336U (en) | 2012-12-06 | 2012-12-06 | Thin film transistor-liquid crystal display (TFT-LCD) array substrate and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202929336U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103018988A (en) * | 2012-12-06 | 2013-04-03 | 京东方科技集团股份有限公司 | TFT-LCD (thin film transistor-liquid crystal display) array substrate, manufacturing method thereof and display device |
| CN104483786A (en) * | 2014-12-30 | 2015-04-01 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and LCD device |
| CN105974704A (en) * | 2016-07-22 | 2016-09-28 | 京东方科技集团股份有限公司 | Pixel structure, method for driving pixel structure, display substrate and display panel |
-
2012
- 2012-12-06 CN CN 201220669139 patent/CN202929336U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103018988A (en) * | 2012-12-06 | 2013-04-03 | 京东方科技集团股份有限公司 | TFT-LCD (thin film transistor-liquid crystal display) array substrate, manufacturing method thereof and display device |
| CN104483786A (en) * | 2014-12-30 | 2015-04-01 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and LCD device |
| CN104483786B (en) * | 2014-12-30 | 2017-04-19 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and LCD device |
| CN105974704A (en) * | 2016-07-22 | 2016-09-28 | 京东方科技集团股份有限公司 | Pixel structure, method for driving pixel structure, display substrate and display panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103018988A (en) | TFT-LCD (thin film transistor-liquid crystal display) array substrate, manufacturing method thereof and display device | |
| CN101140743B (en) | Display panel and drive method thereof | |
| TWI288912B (en) | Driving method for a liquid crystal display | |
| CN103399440A (en) | Array substrate, display device and drive method | |
| US20050190138A1 (en) | LCD and method of driving the same | |
| CN104880871A (en) | Display panel and display device | |
| US9425219B2 (en) | Array substrate with data line sharing, manufacturing method thereof and display panel | |
| CN201072484Y (en) | Active element array substrates and LCD panel | |
| CN104090438A (en) | Array substrate, display device and driving method of display device | |
| CN102929054A (en) | Array substrate and driving method of pixels | |
| US20090058785A1 (en) | Liquid crystal display and driving method thereof | |
| WO2001048546A1 (en) | Liquid crystal device | |
| US20140111099A1 (en) | Array substrate, lcd device and driving method | |
| CN105629609A (en) | Array substrate, liquid crystal display device and driving method of liquid crystal display device | |
| CN102981339A (en) | Array substrate, and 3D display device and drive method thereof | |
| CN105551446A (en) | Liquid crystal display panel driving method | |
| CN106647055A (en) | Display panel and display device | |
| CN107180618B (en) | HVA mode of connection based on GOA circuit | |
| CN104503113A (en) | Liquid crystal display panel and display device | |
| CN110189718A (en) | Pixel-driving circuit and image element driving method | |
| CN105116579B (en) | Liquid crystal display panel and its driving method | |
| US8576349B2 (en) | Liquid crystal display panel and liquid crystal display array substrate | |
| CN202929336U (en) | Thin film transistor-liquid crystal display (TFT-LCD) array substrate and display device | |
| CN100465739C (en) | Liquid crystal display and its driving method and electrode layout method | |
| CN101424833B (en) | Multi-domain LCD |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130508 |
|
| CX01 | Expiry of patent term |