CN202925081U - High-conductivity oxygen-free copper dissolving device - Google Patents

High-conductivity oxygen-free copper dissolving device Download PDF

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Publication number
CN202925081U
CN202925081U CN 201220645784 CN201220645784U CN202925081U CN 202925081 U CN202925081 U CN 202925081U CN 201220645784 CN201220645784 CN 201220645784 CN 201220645784 U CN201220645784 U CN 201220645784U CN 202925081 U CN202925081 U CN 202925081U
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CN
China
Prior art keywords
graphite
free copper
furnace body
melting furnace
vacuum melting
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Expired - Fee Related
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CN 201220645784
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Chinese (zh)
Inventor
张海涛
张海霞
车永军
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JINZHOU NEW CENTURY QUARTZ (GROUP) CO Ltd
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JINZHOU NEW CENTURY QUARTZ (GROUP) CO Ltd
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Priority to CN 201220645784 priority Critical patent/CN202925081U/en
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Publication of CN202925081U publication Critical patent/CN202925081U/en
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Abstract

The utility model relates to a high-conductivity oxygen-free copper dissolving device. The high-conductivity oxygen-free copper dissolving device comprises a furnace body of a vacuum melting furnace, wherein a main heater is arranged in the furnace body of the vacuum melting furnace, a graphite crucible is arranged in a bulk cavity of the furnace body of the vacuum melting furnace, a liquid drainage port is arranged at the bottom of the graphite crucible, a liquid drainage control valve is arranged on the liquid drainage port, and the high-conductivity oxygen-free copper dissolving device is characterized in that a liftable graphite stirrer is suspended in the graphite crucible. The high-conductivity oxygen-free copper dissolving device has the advantages that as the graphite stirrer is increased, a copper solution can be in full contact with graphite during the lifting process of the graphite stirrer, and the contact area between oxygen in the copper solution and the graphite is increased; and furthermore, a screen plate structure of the graphite stirrer can interfere with surface tension of the copper solution during the stirring process, promote the fast departure of gas from the copper solution, realize strong deoxidization and impurity removal abilities and realize short-time high-efficiency deoxidization.

Description

High conductivity oxygen free copper material device
Technical field
The utility model relates to a kind of high conductivity oxygen free copper material device.
Background technology
Oxygen free copper is that a kind of electric conductivity is high, the metallic substance of solidity to corrosion, low temperature resistant, processing and good welding performance, is widely used in sputtering target material, high-end sound wire and high-end microelectronic device wire.GB TU0 oxygen free copper and American Standard C10100 oxygen free copper are all high level copper materials, and specific conductivity is IACS 101%, and residual resistivity is 200.Use at the high-end wire such as super conductor cable, particle accelerator components and parts, more the oxygen free copper of high conductivity becomes main direction of studying.
The raising of copper specific conductivity with reduce copper material in oxygen content, metals content impurity and to improve crystalline structure relevant, wherein, what specific conductivity was had the greatest impact is the content of oxygen and iron contamination.In copper, iron contamination can reduce by electrolysis, yet the process of electrolysis is easily brought oxygen in the copper powder of deposition into; Simultaneously, oxygen is also very high in the solubleness of copper liquid, and oxygen also is easy to enter in copper liquid in the process of melting copper, causes the oxygen level of copper material of ingot casting very high, generally can reach the ppm of hundreds of, makes specific conductivity at IACS below 100%.
At present, oxygen free copper deoxidation method of purification is that high pure electrolytic copper is put into the high purity graphite crucible, is melted to 1350 ℃~1370 ℃ by high-frequency induction heating, and 5 * 10 -2Under the vacuum environment of Pa, insulation 20min fully evaporates gas and volatile impunty, gets ultrahigh pure copper ingot.The method has adopted the heating under vacuum mode to remove oxygen and impurity, and is slow but oxygen removes speed, and the limited time of heated volatile (the oversize volatilization time can cause a large amount of copper to be evaporated) has limited the ability of vacuum deaeration and removal of impurities.
Summary of the invention
The technical problems to be solved in the utility model is to provide the high conductivity oxygen free copper material device that a kind of deoxidation speed is fast, vacuum deaeration removal of impurities ability is strong.
Technical solution of the present utility model is:
A kind of high conductivity oxygen free copper material device, comprise the vacuum melting furnace body, be provided with primary heater in the vacuum melting furnace body, be provided with plumbago crucible in the cavity volume of described vacuum melting furnace body, described plumbago crucible bottom is provided with a leakage fluid dram, described leakage fluid dram is provided with the discharge opeing control valve, and its special character is: liftable graphite whisker has suspended in described plumbago crucible.
Be positioned in the vacuum melting furnace body plumbago crucible above be provided with hoisting appliance, described graphite whisker is connected with hoisting appliance.
Described graphite whisker is comprised of sieve plate, the elevating lever that is located at the sieve plate central position.
Corresponding leakage fluid dram position is provided with auxiliary heater in the vacuum melting furnace body, solidifies in casting process to avoid liquid oxygen free copper.
The beneficial effects of the utility model:
Owing to having set up graphite whisker in plumbago crucible, graphite whisker makes copper liquid fully contact with graphite in the process of lifting, oxygen and graphite contact area in copper liquid have been increased, and the sieve-plate structure of graphite whisker disturbs the top layer tension force of copper liquid in whipping process, promote that gas leaves copper liquid fast, deoxidation and removal of impurities ability are strong, have realized short period of time high-level efficiency deoxidation.
Description of drawings
Fig. 1 is the structural representation of utility model;
Fig. 2 is the vertical view of graphite whisker in Fig. 1;
In figure: 1-vacuum melting furnace body, 2-auxiliary heater, 3-primary heater, 4-plumbago crucible, 401-leakage fluid dram, 5-graphite whisker, 501-sieve plate, 502-elevating lever, 6-hoisting appliance, 7-discharge opeing control valve, 8-ingot puller.
Embodiment
As shown in the figure, this high conductivity oxygen free copper material device, comprise vacuum melting furnace body 1, be provided with primary heater 3 in vacuum melting furnace body 1, be provided with plumbago crucible 4 in the cavity volume of described vacuum melting furnace body 1, described plumbago crucible 4 bottoms are provided with a leakage fluid dram 401, and described leakage fluid dram 401 is provided with discharge opeing control valve 7, and corresponding discharge opeing control valve 7 positions are provided with auxiliary heater 2 in vacuum melting furnace body 1.The graphite whisker 5 that suspended in described plumbago crucible 4, described graphite whisker 5 is comprised of sieve plate 501, the elevating lever 502 that is threaded connection in sieve plate 501 centre of surface positions, and the sieve aperture on the present embodiment sieve plate 501 is circular hole (also can be square hole).Described elevating lever 502 be located at vacuum melting furnace body 1 in and the hoisting appliance 6 that is positioned at plumbago crucible 4 tops be connected, realize the lifting of elevating lever 502 by hoisting appliance 6.
When producing, enter in plumbago crucible 4 electrolytic copper of the purity after cleaning, drying>99.95% is packaged, vacuumize, when vacuum tightness reaches 10Pa, start primary heater 3, copper billet is heated to 900 ℃, and vacuum melting furnace is evacuated to 0.009Pa, insulation 2h, fill protection gas, air pressure is adjusted to 1Pa, improves Heating temperature, make copper billet be fused into copper liquid under 1200 ℃; Continue gas clean-up to 0.009Pa, start graphite whisker 5, graphite whisker 5 enters copper liquid with the speed decline of 20mm/min, behind arrival plumbago crucible 4 bottoms, go up to liquid level with the speed of 20mm/min, pump in copper liquid, stir 0.5h, get liquid oxygen free copper; With auxiliary heater 2, leakage fluid dram 401 is heated to 1350 ℃, opens discharge opeing control valve 7, liquid oxygen free copper is cast in the ingot puller 8 that is positioned at material device below in vacuum melting furnace body 1, carry out crystallization and draw ingot, get the anaerobic copper ingot; The anaerobic copper ingot is carried out conductivity measurement, and measuring result is as shown in table 1.
Table 1
Specific conductivity RRR residual resistivity (4.2K) RRR residual resistivity (10K) RRR residual resistivity (20K)
IACS102.4% 500 420 310

Claims (4)

1. high conductivity oxygen free copper material device, comprise the vacuum melting furnace body, be provided with primary heater in the vacuum melting furnace body, be provided with plumbago crucible in the cavity volume of described vacuum melting furnace body, described plumbago crucible bottom is provided with a leakage fluid dram, described leakage fluid dram is provided with the discharge opeing control valve, it is characterized in that: liftable graphite whisker has suspended in described plumbago crucible.
2. high conductivity oxygen free copper material device according to claim 1 is characterized in that: be positioned in the vacuum melting furnace body plumbago crucible above be provided with hoisting appliance, described graphite whisker is connected with hoisting appliance.
3. high conductivity oxygen free copper material device according to claim 1 is characterized in that: described graphite whisker is to be made of sieve plate, the elevating lever that is located at the sieve plate central position.
4. high conductivity oxygen free copper material device according to claim 1, it is characterized in that: corresponding leakage fluid dram position is provided with auxiliary heater in the vacuum melting furnace body.
CN 201220645784 2012-11-30 2012-11-30 High-conductivity oxygen-free copper dissolving device Expired - Fee Related CN202925081U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220645784 CN202925081U (en) 2012-11-30 2012-11-30 High-conductivity oxygen-free copper dissolving device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220645784 CN202925081U (en) 2012-11-30 2012-11-30 High-conductivity oxygen-free copper dissolving device

Publications (1)

Publication Number Publication Date
CN202925081U true CN202925081U (en) 2013-05-08

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104357698A (en) * 2014-09-28 2015-02-18 江苏中容铜业有限公司 Copper strip base material production system for lead frame
CN105296775A (en) * 2015-11-30 2016-02-03 银邦金属复合材料股份有限公司 Aluminium alloy smelting device
CN107177738A (en) * 2017-04-28 2017-09-19 重庆市永川区益锐机械有限责任公司 Oxygen-free copper foundry furnace
CN107805722A (en) * 2017-12-12 2018-03-16 芜湖精艺铜业有限公司 Oxygen-free copper foundry furnace

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104357698A (en) * 2014-09-28 2015-02-18 江苏中容铜业有限公司 Copper strip base material production system for lead frame
CN104357698B (en) * 2014-09-28 2016-06-22 江苏中容铜业有限公司 A kind of lead frame copper strip base material production system
CN105296775A (en) * 2015-11-30 2016-02-03 银邦金属复合材料股份有限公司 Aluminium alloy smelting device
CN107177738A (en) * 2017-04-28 2017-09-19 重庆市永川区益锐机械有限责任公司 Oxygen-free copper foundry furnace
CN107805722A (en) * 2017-12-12 2018-03-16 芜湖精艺铜业有限公司 Oxygen-free copper foundry furnace

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130508

Termination date: 20191130

CF01 Termination of patent right due to non-payment of annual fee