CN202905660U - 离子注入昆腾设备上离子源的结构 - Google Patents
离子注入昆腾设备上离子源的结构 Download PDFInfo
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- CN202905660U CN202905660U CN 201220476687 CN201220476687U CN202905660U CN 202905660 U CN202905660 U CN 202905660U CN 201220476687 CN201220476687 CN 201220476687 CN 201220476687 U CN201220476687 U CN 201220476687U CN 202905660 U CN202905660 U CN 202905660U
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CN 201220476687 CN202905660U (zh) | 2012-09-17 | 2012-09-17 | 离子注入昆腾设备上离子源的结构 |
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CN 201220476687 CN202905660U (zh) | 2012-09-17 | 2012-09-17 | 离子注入昆腾设备上离子源的结构 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131227 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20131227 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130424 Termination date: 20150917 |
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EXPY | Termination of patent right or utility model |