CN202903955U - Built-in ultrahigh frequency partial discharge sensor - Google Patents

Built-in ultrahigh frequency partial discharge sensor Download PDF

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Publication number
CN202903955U
CN202903955U CN 201220622538 CN201220622538U CN202903955U CN 202903955 U CN202903955 U CN 202903955U CN 201220622538 CN201220622538 CN 201220622538 CN 201220622538 U CN201220622538 U CN 201220622538U CN 202903955 U CN202903955 U CN 202903955U
Authority
CN
China
Prior art keywords
sensor
built
ultrahigh frequency
ring flange
flange plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201220622538
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Chinese (zh)
Inventor
王茂祥
赵震杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHANGZHOU AITE TECH CO., LTD.
Original Assignee
CHANGZHOU AITE TECHNOLOGY CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHANGZHOU AITE TECHNOLOGY CO LTD filed Critical CHANGZHOU AITE TECHNOLOGY CO LTD
Priority to CN 201220622538 priority Critical patent/CN202903955U/en
Application granted granted Critical
Publication of CN202903955U publication Critical patent/CN202903955U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model relates to the technical field of optical, mechanical and electronic integrated high-performance instruments, and especially relates to a built-in ultrahigh frequency partial discharge sensor, comprising a shielding protective casing, a flange plate, a built-in sensor, and a sensor protection cover. The shielding protective casing is fixed on the flange plate through screws. A bottom of the flange plate is provided with a sensor installation groove. The built-in sensor is installed in the sensor installation groove. The sensor protection cover is disposed outside the sensor installation groove. A sealing groove is disposed between the flange plate and the sensor protection cover. The center of the flange plate is provided with an adapter connecting hole. The built-in ultrahigh frequency partial discharge sensor is simple in structure, good in performance, convenient in processing, installation, and maintenance.

Description

Sensor is put in built-in ultrahigh frequency office
Technical field
The utility model relates to optical, mechanical and electronic integration high-performance field of instrumentation technology, and sensor is put in especially a kind of built-in ultrahigh frequency office.
Background technology
Always have defective in various degree in the Electric Power Equipment Insulation commonly used, be exactly the various impurity that contain in these defective solids or the liquid medium, moisture, air gap etc.In solid insulation, usually exist local damage or air gap, in fluid insulation, usually exist bubble.In these defectives, some is under various operation factors (electric field strength variation, mechanical stress, make moist etc.) long term, produce in insulation ag(e)ing, decomposition, destruction, the cracking process, some is not go totally in the manufacture process, and these defectives are the main causes that cause partial discharge of transformer.Because than other local concentrates, when the outside applied voltage and is elevated to a certain degree, it is enough large that the electric field at these positions reaches in defective position Electric Field Distribution, when having surpassed the free field intensity of this place's material, will produce dissociates discharges, and is called shelf depreciation.Shelf depreciation refers to local breakdown phenomenon in two insulating mediums between the electrode.
The GIS fault seldom, but just in case the consequence that breaks down is quite serious.The GIS service work is more numerous and diverse, and the time is long, and its power failure range relates to non-fault element sometimes; And the maintenance technological requirement is very meticulous, careless slightlyly just may cause the repair quality problem.Therefore, adopt the method do not disintegrate from the outside to equipment operation carry out state estimation, namely quite important and urgent demand is monitored and overhauled to the GIS equipment state.
It is exactly to need sensor to finish measurement to monitoring equipment that GIS office is placed on the extremely important link of line monitoring system, quantity of information is delivered to front end processor carry out collective analysis, demonstration and alarm, and upload the data to background computer and comprehensively monitor and analyze.Design so and make a kind of built-in sensor that is placed on line monitoring system for GIS office and just seem very necessary.The built-in ultrahigh frequency office sensor that this patent design and being of making are such.
The utility model content
In order to overcome the deficiencies in the prior art, the utility model provides a kind of built-in ultrahigh frequency office to put sensor.
The technical scheme that its technical matters that solves the utility model adopts is: sensor is put in a kind of built-in ultrahigh frequency office; comprise shielding protection shell, ring flange, built-in sensors and sensor protective cover; the shielding protection shell is fixed on the ring flange by screw; described ring flange bottom is provided with the installation of sensors groove; built-in sensors is installed in the installation of sensors groove; the installation of sensors groove is equipped with sensor protective cover outward, is provided with a seal groove between ring flange and the sensor protective cover.
According to another embodiment of the present utility model, further comprise the middle adapter connecting hole that is provided with of described ring flange.
The beneficial effects of the utility model are that it is simple, functional that sensor construction is put in the built-in ultrahigh frequency of basis office, is convenient to processing, installation, maintenance.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is stereographic map of the present utility model;
Fig. 2 (a), 2(b) be the structural representation that the utility model is equipped with sensor protective cover;
Fig. 3 (a), 3(b) be the structural representation of the utility model ring flange;
Among the figure, 1, the shielding protection shell, 2, ring flange, 3, built-in sensors, 4, sensor protective cover, 5, seal groove, 6, the adapter connecting hole, 7, the installation of sensors groove.
Embodiment
Such as Fig. 1, Fig. 2, shown in Figure 3; sensor is put in a kind of built-in ultrahigh frequency office; comprise shielding protection shell 1, ring flange 2, built-in sensors 3 and sensor protective cover 4; shielding protection shell 1 is fixed on the ring flange 2 by screw; described ring flange 2 bottoms are provided with installation of sensors groove 7; built-in sensors 3 is installed in the installation of sensors groove 7, and sensor protective cover 4 is equipped with in installation of sensors groove 7 outsides, is provided with a seal groove 5 between ring flange 2 and the sensor protective cover 4.Be provided with adapter connecting hole 6 in the middle of the ring flange 2.The one special installation of sensors groove 7 of placing internal sensor 3 is arranged at ring flange 2 bottoms, is farthest reducing the damage of built-in sensors 3.Sensor protective cover and flangeseal place have designed a seal groove, are used for placing O type circle, have guaranteed the good sealing property of this sensor.
Wherein, Fig. 2 (a) sensor is vertical view, has removed shielding protection shell 1; Fig. 2 (b) is the sensor upward view.Fig. 2 (b) has removed sensor protective cover 4, is vertical view 3 (a) and the upward view 3 (b) of ring flange 2.
This built-in ultrahigh frequency office puts sensor and has simple in structurely, functional, is convenient to processing, is convenient to install, and is convenient to the characteristics such as maintenance.Increased many details compared to common built-in sensor, be worthy of popularization.
Foregoing description only is technical conceive and the characteristics of explanation this patent equipment, and its purpose is to allow the personage of familiar technique can understand the content of this patent and is implemented, and can not limit with this protection domain of this patent.All equivalences of doing according to this patent Spirit Essence change or modify, and all should be encompassed in the protection domain of this patent.

Claims (2)

1. sensor is put in a built-in ultrahigh frequency office; comprise shielding protection shell (1), ring flange (2), built-in sensors (3) and sensor protective cover (4); shielding protection shell (1) is fixed on the ring flange (2) by screw; it is characterized in that; described ring flange (2) bottom is provided with installation of sensors groove (7); built-in sensors (3) is installed in the installation of sensors groove (7); sensor protective cover (4) is equipped with in installation of sensors groove (7) outside, is provided with a seal groove (5) between ring flange (2) and the sensor protective cover (4).
2. sensor is put in built-in ultrahigh frequency according to claim 1 office, it is characterized in that, is provided with adapter connecting hole (6) in the middle of the described ring flange (2).
CN 201220622538 2012-11-22 2012-11-22 Built-in ultrahigh frequency partial discharge sensor Expired - Fee Related CN202903955U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220622538 CN202903955U (en) 2012-11-22 2012-11-22 Built-in ultrahigh frequency partial discharge sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220622538 CN202903955U (en) 2012-11-22 2012-11-22 Built-in ultrahigh frequency partial discharge sensor

Publications (1)

Publication Number Publication Date
CN202903955U true CN202903955U (en) 2013-04-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220622538 Expired - Fee Related CN202903955U (en) 2012-11-22 2012-11-22 Built-in ultrahigh frequency partial discharge sensor

Country Status (1)

Country Link
CN (1) CN202903955U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104330713A (en) * 2014-11-04 2015-02-04 日新电机(无锡)有限公司 Partial discharge detecting structure for realizing high-voltage power capacitor
CN106249113A (en) * 2016-08-18 2016-12-21 张春辉 A kind of method to set up of equivalence transducer
CN108490328A (en) * 2018-05-25 2018-09-04 杭州顿恒科技有限公司 A kind of power transformer high-precision local discharging detection device
CN112304391A (en) * 2020-11-03 2021-02-02 安徽安广电气有限公司 Material level meter with excellent corrosion resistance

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104330713A (en) * 2014-11-04 2015-02-04 日新电机(无锡)有限公司 Partial discharge detecting structure for realizing high-voltage power capacitor
CN106249113A (en) * 2016-08-18 2016-12-21 张春辉 A kind of method to set up of equivalence transducer
CN108490328A (en) * 2018-05-25 2018-09-04 杭州顿恒科技有限公司 A kind of power transformer high-precision local discharging detection device
CN112304391A (en) * 2020-11-03 2021-02-02 安徽安广电气有限公司 Material level meter with excellent corrosion resistance

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP03 Change of name, title or address

Address after: 213000, No. 888, MCC Road, New Gate Street, bell tower, Jiangsu, Changzhou

Patentee after: CHANGZHOU AITE TECH CO., LTD.

Address before: 3 building, floor 3, building 2188, new gate science and Technology Industrial Park, No. 213000 Longcheng Road, Changzhou Economic Development Zone, Jiangsu, China

Patentee before: Changzhou Aite Technology Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130424

Termination date: 20171122