CN202893212U - Reactive gas mixing device and plasma processing equipment comprising same - Google Patents
Reactive gas mixing device and plasma processing equipment comprising same Download PDFInfo
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- CN202893212U CN202893212U CN201220448240.4U CN201220448240U CN202893212U CN 202893212 U CN202893212 U CN 202893212U CN 201220448240 U CN201220448240 U CN 201220448240U CN 202893212 U CN202893212 U CN 202893212U
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- gas
- mixing arrangement
- pipeline
- reacting
- reacting gas
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Abstract
The utility model relates to a reactive gas mixing device and plasma processing equipment comprising the reactive gas mixing device. The plasma processing equipment comprises a reaction chamber and a gas spraying head. The reactive gas mixing device is used for mixing first gas and second gas into reactive gas, and the reactive gas is introduced into the plasma processing equipment to be subjected to plasma processing technique; the mixing device comprises a first gas inlet, a second gas inlet, a mixed gas outlet and a mixed gas pipeline, wherein one end of the mixed gas pipeline is connected with the first gas inlet and the second gas inlet, the other end of the mixed gas pipeline is connected with the mixed gas outlet, the mixed gas pipeline comprises at least one first pipeline part and at least one second pipeline part, and the first pipeline part and the second pipeline part are adjacently-connected pipeline parts of the mixed gas pipeline; and at least one corner pipeline is connected between the first pipeline part and the second pipeline part. The reactive gas mixing device and the plasma processing equipment comprising the reactive gas mixing device have the advantages that the structure is simple, the implementation is convenient, and the reactive gas is uniformly mixed.
Description
Technical field
The utility model relates to a kind of reacting gas mixing arrangement that is used with apparatus for processing plasma.
Background technology
In plasma-treating technology, at first need modulation gas and process gas are mixed into reacting gas, again reacting gas is imported in the reaction chamber, and apply radio-frequency power, to be processed of semiconductor is carried out plasma-treating technology.Plasma-treating technology requires modulation gas and process gas to mix, but when the gas mixer that generally adopts pipe-like or chamber shape carries out the gas mixing, owing to two kinds of gas flow rate differences, air pressure difference, in gas mixer, be difficult to obtain the mixing of better degree, thereby cause the concentration of reacting gas in the reaction chamber and non-conformity of quality to close technological requirement, bring adverse effect to plasma-treating technology.
Generally speaking, with modulating gas and the process gas mixing arrangement by a large volume, long path, will realize better the mixing to gas; But adopt this mixing arrangement can reduce the air pressure of reacting gas, thereby make plasma-treating technology increase too much expense, promoted the complexity of whole technique.
Therefore, research staff expectation obtains a kind of simple in structure, reacting gas mixing arrangement that modulation gas and process gas are mixed sufficiently uniformly.
The utility model content
The purpose of this utility model is to provide a kind of reacting gas mixing arrangement that modulation gas and process gas are mixed.
For achieving the above object, the technical solution of the utility model is as follows:
A kind of reacting gas mixing arrangement, be used with apparatus for processing plasma, apparatus for processing plasma comprises reaction chamber and gas spray, the reacting gas mixing arrangement is used for the first gas and the second gas are mixed into reacting gas, reacting gas imports in the apparatus for processing plasma and carries out plasma-treating technology, this mixing arrangement comprises: the first gas inlet, and the first gas passes into from the first gas inlet; The second gas inlet, the second gas passes into from the second gas inlet; Mixed gas outlet, reacting gas imports reaction chamber by mixed gas outlet through gas spray; The mist pipeline, the one end connects the first gas inlet and the second gas inlet, its other end connects mixed gas outlet, the mist pipeline comprises at least one first pipe section and at least one second pipe section, and the first pipe section and second pipe section are pipe section adjacent in the mist pipeline; Wherein, between the first pipe section and second pipe section, also be connected at least one bent angle pipeline.
Preferably, the bent angle pipeline removably is connected with the first pipe section, second pipe section respectively.
Preferably, the reacting gas mixing arrangement also comprises a gas separator, connects between the gentle body spray head of mist pipeline, and gas separator is divided into multichannel with reacting gas and imports the zones of different of reaction chamber by gas spray.
Preferably, the bent angle pipeline is a plurality of and paired setting, and is in office a pair of or appoint many to being connected with at least one control valve between the adjacent bent angle pipeline, the flow of reacting gas in the on off operating mode of control valve control mist pipeline and the mist pipeline.
The invention also discloses a kind of apparatus for processing plasma, at least comprise reaction chamber, gas spray and reacting gas mixing arrangement, the reacting gas mixing arrangement mixes the first gas and the second gas rear by carrying out plasma-treating technology in the gas spray importing reaction chamber.
The reacting gas mixing arrangement that the utility model provides, one or more bent angle pipelines in the mist pipeline, have been accessed, realized the first gas and the second gas uniform are mixed with simple structure, make that reacting gas concentration and distribution meet technological requirement in the reaction chamber, its expense is few, and it is convenient to implement.
Description of drawings
Fig. 1 illustrates the reacting gas mixing arrangement structural representation of the utility model the first embodiment;
Fig. 2 illustrates the reacting gas mixing arrangement structural representation of the utility model the second embodiment;
Fig. 3 illustrates the reacting gas mixing arrangement structural representation of the utility model the 3rd embodiment;
Fig. 4 illustrates the reacting gas mixing arrangement structural representation of the utility model the 4th embodiment.
The specific embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present utility model is described in further detail.
As described in Figure 1, the reacting gas mixing arrangement that the utility model the first embodiment provides comprises the first gas inlet 10, the second gas inlet 20, mixed gas outlet 30 and mist pipeline, and this reacting gas mixing arrangement and apparatus for processing plasma are used.Apparatus for processing plasma comprises reaction chamber and gas spray, the reacting gas mixing arrangement is mixed into reacting gas with the first gas and the second gas, reacting gas imports in the reaction chamber by gas spray subsequently, apply radio-frequency power to reaction chamber again and act on reacting gas generation plasma, the semiconductor workpiece to be processed that is positioned in the reaction chamber is carried out plasma-treating technology.
The first gas passes into this reacting gas mixing arrangement from the first gas inlet 10, and the second gas passes into from the second gas inlet 20, and the reacting gas that both mix formation exports in the gas spray from mixed gas outlet 30.
Wherein, the mist pipeline comprises the first pipe section 401, second pipe section 402 and bent angle pipeline 403, the first pipe section 401 and second pipe section 402 were adjacent pipe section originally, and present embodiment accesses bent angle pipeline 403 between the first pipe section 401 and second pipe section 402.Accessing this bent angle pipeline 403 is equivalent to provide more space for the mixing of first, second gas, thereby the first gas and the second gas can be in this mixing arrangement mix more equably, meet technological requirement so that mix the features such as concentration (comprise wherein the concentration of the first gas and the concentration of the second gas), distribution of the reacting gas that forms.
The reacting gas mixing arrangement that present embodiment provides, on the one hand, also uncomplicated with regard to its structure, the manufacturing of bent angle pipeline 403 is also relatively simple; On the other hand, the circulation path of reacting gas only slightly increases, thereby the air pressure of reacting gas does not have the reduction of obvious amplitude, makes the plasma-treating technology process can not produce unnecessary expense.
Further, bent angle pipeline 403 removably is connected with the first pipe section 401 and second pipe section 402 respectively, thereby the reacting gas mixing arrangement is simple in structure, and assembling is convenient.
Further, the bent angle of bent angle pipeline 403 is 90 degree.
Further, bent angle pipeline 403 is formed in one.
Further, the mist pipeline that comprises the first pipe section 401, second pipe section 402 and bent angle pipeline 403 is made by aluminum or aluminum alloy.
Further, in the present embodiment, the first gas is process gas, and the second gas cooperates process gas to carry out plasma-treating technology for modulation gas, modulation gas.
It will be appreciated by those skilled in the art that in the first pipe section 401 and 402 in second pipe section one or more interconnective bent angle pipelines 403 are set, all can realize technique effect of the present utility model.
Fig. 2 illustrates the reacting gas mixing arrangement according to the utility model the second embodiment.Compare with the reacting gas mixing arrangement of the first embodiment, except the first gas inlet 10, the second gas inlet 20, mixed gas outlet 30, the first pipe section 401, second pipe section 402 and bent angle pipeline 403, also comprise a gas separator 50, gas separator 50 is provided with 1 gas feed 51,2 gas vents 52,53.Gas feed 51 is communicated with to import the first gas with mixed gas outlet 30, the second gas mixes the reacting gas that forms.
Under the preferable case, bent angle pipeline 403 removably is connected with the first pipe section 401 and second pipe section 402 respectively, thereby the reacting gas mixing arrangement is simple in structure, and assembling is convenient.
Fig. 3 illustrates the reacting gas mixing arrangement according to the utility model the 3rd embodiment.Compare with the reacting gas mixing arrangement of the second embodiment, it also comprises a control valve 60 except the first gas inlet 10, the second gas inlet 20, mixed gas outlet 30, the first pipe section 401, second pipe section 402, bent angle pipeline 403 and gas separator 50.Control valve 60 is connected between the gas feed 51 of mixed gas outlet 30 and gas separator 50, and the control reacting gas enters the flow of gas separator 50.
When control valve 60 was opened fully, reacting gas unhinderedly passed in the gas separator 50; When control valve 60 cut out, reacting gas can't pass into; When control valve 60 mediated attitude, reacting gas passed in the gas separator 50 with restricted flow velocity.
More specifically, control valve 60 can be connected with a control device, receives the control signal that this control device produces, and moves to control the flow that reacting gas enters gas separator 50.
Further, control valve 60 is pneumatic control valve.
Fig. 4 illustrates the reacting gas mixing arrangement according to the utility model the 4th embodiment.Compare with the reacting gas mixing arrangement of the second embodiment, it is except the first gas inlet 10, the second gas inlet 20, mixed gas outlet 30, the first pipe section 401, second pipe section 402, also comprise 2 bent angle pipelines 4031,4032 and 1 control valves 60, control valve 60 is connected between the bent angle pipeline 4031,4032, the on off operating mode of control mist pipeline and the flow of reacting gas.
More specifically, control valve 60 can be connected with a control device, receives the control signal that this control device produces, and moves to control the on off operating mode of mist pipeline and the flow of reacting gas.
Further, control valve 60 is pneumatic control valve.
Further, the first pipe section 401, second pipe section 402 are connected with the bent angle pipeline respectively, 4032 connect removably; Bent angle pipeline 4031,4032 also is connected with control valve 60 removably.
Further, bent angle pipeline 4031,4032 bent angle are 90 degree.
Further, bent angle pipeline 4031,4032 is formed in one.
Further, comprise that the first pipe section 401, second pipe section 402 and bent angle pipeline 4031,4032 mist pipeline made by aluminum or aluminum alloy.
Further, in the present embodiment, the first gas is process gas, and the second gas cooperates process gas to carry out plasma-treating technology for modulation gas, modulation gas.
Those skilled in the art understand; the a plurality of bent angle pipelines of access between the first pipe section 401, second pipe section 402; and between any two adjacent bent angle pipelines, pneumatic control valve is set; all can any impact not arranged to technique effect of the present utility model, so should fall into protection domain of the present utility model.
The utility model the 5th embodiment provides a kind of apparatus for processing plasma (accompanying drawing is not shown), comprise reaction chamber, gas spray and reacting gas mixing arrangement, the reacting gas mixing arrangement mixes process gas and modulation gas rear by in the gas spray importing reaction chamber, applied to reaction chamber by radio-frequency power supply again and produce plasma after radio-frequency power acts on reacting gas, the semiconductor workpiece to be processed that is positioned in the reaction chamber is carried out plasma-treating technology.
Wherein, the reacting gas mixing arrangement can adopt such as any structure among the utility model first, second, third or the 4th, all can implement the utility model, and reaches technique effect roughly the same, all falls into protection domain of the present utility model.
Above-described only is preferred embodiment of the present utility model; described embodiment limits scope of patent protection of the present utility model; therefore the equivalent structure done of every utilization specification of the present utility model and accompanying drawing content changes, and in like manner all should be included in the protection domain of the present utility model.
Claims (10)
1. reacting gas mixing arrangement, be used with apparatus for processing plasma, described apparatus for processing plasma comprises reaction chamber and gas spray, described reacting gas mixing arrangement is used for the first gas and the second gas are mixed into described reacting gas, described reacting gas imports and carries out plasma-treating technology in the described apparatus for processing plasma, and described mixing arrangement comprises:
The first gas inlet, described the first gas passes into from described the first gas inlet;
The second gas inlet, described the second gas passes into from described the second gas inlet;
Mixed gas outlet, described reacting gas imports described reaction chamber by described mixed gas outlet through described gas spray;
The mist pipeline, the one end connects described the first gas inlet and the second gas inlet, its other end connects described mixed gas outlet, described mist pipeline comprises at least one first pipe section and at least one second pipe section, and described the first pipe section and second pipe section are adjacent pipe section in the described mist pipeline;
It is characterized in that, between described the first pipe section and described second pipe section, also be connected at least one bent angle pipeline.
2. reacting gas mixing arrangement as claimed in claim 1 is characterized in that, described bent angle pipeline removably is connected with described the first pipe section, described second pipe section respectively.
3. reacting gas mixing arrangement as claimed in claim 2, it is characterized in that, described reacting gas mixing arrangement also comprises a gas separator, connect between described mist pipeline and the described gas spray, described gas separator is divided into multichannel with described reacting gas and imports the zones of different of described reaction chamber by described gas spray.
4. reacting gas mixing arrangement as claimed in claim 3, it is characterized in that, described reacting gas mixing arrangement also comprises at least one control valve, connect between described mixed gas outlet and the described gas separator, described control valve is controlled the flow that described reacting gas enters described gas separator.
5. reacting gas mixing arrangement as claimed in claim 3, it is characterized in that, described bent angle pipeline is a plurality of and paired setting, in office a pair of or appoint manyly to being connected with at least one control valve between the adjacent described bent angle pipeline, described control valve is controlled the flow of reacting gas described in the on off operating mode of described mist pipeline and the described mist pipeline.
6. such as each described reacting gas mixing arrangement in the claim 1 to 5, it is characterized in that the bent angle of described bent angle pipeline is 90 degree.
7. reacting gas mixing arrangement as claimed in claim 6 is characterized in that, described bent angle pipeline is formed in one.
8. reacting gas mixing arrangement as claimed in claim 7 is characterized in that, described mist pipeline is made by aluminum or aluminum alloy.
9. reacting gas mixing arrangement as claimed in claim 6 is characterized in that, described the first gas is process gas, and described the second gas cooperates described the first gas to carry out described plasma-treating technology for modulation gas.
10. apparatus for processing plasma, at least comprise reaction chamber, gas spray and such as each described reacting gas mixing arrangement in the claim 1 to 5, import by described gas spray after described reacting gas mixing arrangement mixes the first gas and the second gas and carry out plasma-treating technology in the described reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220448240.4U CN202893212U (en) | 2012-09-04 | 2012-09-04 | Reactive gas mixing device and plasma processing equipment comprising same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220448240.4U CN202893212U (en) | 2012-09-04 | 2012-09-04 | Reactive gas mixing device and plasma processing equipment comprising same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202893212U true CN202893212U (en) | 2013-04-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201220448240.4U Expired - Lifetime CN202893212U (en) | 2012-09-04 | 2012-09-04 | Reactive gas mixing device and plasma processing equipment comprising same |
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| CN (1) | CN202893212U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11772058B2 (en) | 2019-10-18 | 2023-10-03 | Taiwan Semiconductor Manufacturing Company Limited | Gas mixing system for semiconductor fabrication |
-
2012
- 2012-09-04 CN CN201220448240.4U patent/CN202893212U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11772058B2 (en) | 2019-10-18 | 2023-10-03 | Taiwan Semiconductor Manufacturing Company Limited | Gas mixing system for semiconductor fabrication |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Reactive gas mixing device and plasma processing equipment comprising same Effective date of registration: 20150202 Granted publication date: 20130424 Pledgee: China Development Bank Co. Pledgor: ADVANCED MICRO FABRICATION EQUIPMENT Inc. SHANGHAI Registration number: 2009310000663 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170809 Granted publication date: 20130424 Pledgee: China Development Bank Co. Pledgor: ADVANCED MICRO FABRICATION EQUIPMENT Inc. SHANGHAI Registration number: 2009310000663 |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: China micro semiconductor equipment (Shanghai) Co.,Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: ADVANCED MICRO FABRICATION EQUIPMENT Inc. SHANGHAI |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130424 |