CN202871757U - Semiconductor packaging improved device - Google Patents
Semiconductor packaging improved device Download PDFInfo
- Publication number
- CN202871757U CN202871757U CN 201220425963 CN201220425963U CN202871757U CN 202871757 U CN202871757 U CN 202871757U CN 201220425963 CN201220425963 CN 201220425963 CN 201220425963 U CN201220425963 U CN 201220425963U CN 202871757 U CN202871757 U CN 202871757U
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- liquid crystal
- thickness
- improved device
- semiconductor packages
- compensation element
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Abstract
The present utility model discloses a semiconductor packaging improved device for packaging an integrated circuit into a liquid crystal. The device comprises a pressing plate for providing pressure, a pedestal fitted with the pressing plate, and a thickness compensation component arranged between the pressing plate and the pedestal, and the thickness compensation component is provided with a quid crystal and used for compensating the thickness of the liquid crystal. In the liquid crystal semiconductor packaging improved device, the thickness compensation component is arranged on the pedestal, under the effect of pressure, the thickness compensation component is penetrated into a place with small liquid crystal thickness, thus the liquid crystal thickness can be compensated, bearing of the liquid crystal is uniform, and disability rate of the liquid crystal is reduced.
Description
Technical field
The utility model relates to liquid crystal display and makes the field, relate in particular in a kind of Thin Film Transistor (TFT) liquid crystal display (Thin Film Transistor Liquid Crystal Display, TFT LCD) manufacture process applied semiconductor packages and improve device.
Background technology
Along with the development of electronic science and technology, the thickness of LCD trend ultrathin has become a kind of inevitable thickness.The thickness of LCD depends on the thickness of core component liquid crystal.So, the manufacturing process of ultrathin liquid crystal is complicated, and the difference in thickness of the ultrathin liquid crystal of producing is large.Thickness of liquid crystal difference is large, causes at liquid crystal at semiconductor packages stage unbalance stress, and the scrappage of liquid crystal is high.
The utility model content
In view of above situation, be necessary to provide a kind of semiconductor packages to improve device, be used in the semiconductor packages stage of liquid crystal, the thickness of liquid crystal is afforded redress, make liquid crystal stressed evenly, reduce the liquid crystal scrappage.
According to an aspect of the present utility model, the semiconductor packages that provides is improved device, be used for integrated antenna package to liquid crystal, comprise pressing plate, the base that cooperates with pressing plate that compressing power is provided and be arranged at base and the thickness compensation element between pressing plate and base, on the thickness compensation element liquid crystal is set, is used for the thickness of liquid crystal is compensated.
In some embodiments, base comprises body, two fixtures, two strong magnetic pieces and a plurality of fixture, fixture is fixed in stator the two opposite sides of body, the thickness compensation element is positioned over the end face of body, and two ends extend to two stators, two strong magnetic pieces are adsorbed in stator, so that the two ends of thickness compensation element are fixed.
In some embodiments, two opposite ends of strong magnetic piece are bent upwards.
In some embodiments, the thickness compensation element is made of silica gel cloth and Teflon, and Teflon is arranged on the silica gel cloth.
In some embodiments, silica gel cloth thickness is 200um.
In some embodiments, Teflon thickness is 12um.
In some embodiments, also comprise padded coaming, pressing plate is being pressed integrated circuit by padded coaming
The utility model liquid crystal semiconductor packages semiconductor packages is improved device by the thickness compensation element is set at base, under the effect of pressure, the thickness compensation element enters the thin place of thickness of liquid crystal, forms compensation with the thickness to liquid crystal, make liquid crystal stressed evenly, reduce the scrappage of liquid crystal.
Description of drawings
Fig. 1 is the schematic diagram that the utility model semiconductor packages is improved an execution mode of device;
Fig. 2 is the stereochemical structure decomposing schematic representation of base among Fig. 1.
Fig. 3 is the perspective view behind the floor installation thickness compensation element among Fig. 2.
Embodiment
Below in conjunction with drawings and the specific embodiments utility model is described in further detail explanation.
Please refer to Fig. 1 to Fig. 3, the utility model semiconductor packages is improved application of installation in the liquid crystal semiconductor packages stage, be used for integrated circuit 101 is packaged into liquid crystal 102, one embodiment comprises pressing plate 103, buffer element 106, thickness compensation element 105 and base 104.
Liquid crystal 102 has thickness difference.
During assembling, the through hole 206 of two stators 202 is over against the fixing hole 205 of body 201.Fixture 204 passes through hole 206 and locks fixing hole 205 stator 202 is fixed in body 201.Thickness compensation element 105 is positioned over the end face of the body 201 of base 104, and the two ends of thickness compensation element 105 extend to the both sides of body 201, and covers stator 202.The two ends of stretching thickness compensation element 105 make thickness compensation element 105 smooth.Strong magnetic 203 is adsorbed in stator 202, thereby makes thickness compensation element 105 fixing.Semiconductor element 101 is positioned over liquid crystal 102.Buffer element 106 is positioned on the semiconductor element 102.Pressing plate 103 is pushed down buffer element 106.The pressure of pressing plate 103 is sent to liquid crystal 102, and liquid crystal 102 is being pressed thickness compensation element 105.Because thickness compensation element 105 is made of silica gel cloth and Teflon, and silica gel cloth is flexible product, so under the effect of pressure, thereby silica gel cloth can be extruded the place of removing to fill up liquid crystal 102 thin thickness, thereby guarantee the stress equalization of liquid crystal 102, guarantee the explosion conducting of ACF (anisotropic conductive tape) particle.
In the present embodiment, add Teflon to avoid silica gel cloth directly to contact with liquid crystal 102 at silica gel cloth, can avoid silica gel at high temperature can produce silica gel oil, cause liquid crystal 102 to pollute.
In the present embodiment, use the silica gel cloth of 200um can guarantee to fill up fully the local of liquid crystal 102 thin thickness and can owing to adding silica gel cloth, not make semiconductor packages improve the rising of device internal temperature again; Use the Teflon of 12um thickness, can reduce the impact that silica gel cloth is cushioned and not affect the temperature that semiconductor packages is improved device.
In the present embodiment, the corner warpage of strong magnetic 203 is convenient to the strong magnetic 203 of dismounting.
The utility model liquid crystal semiconductor packages semiconductor packages is improved device by at base (104) thickness compensation element 105 being set, under the effect of pressure, thickness compensation element 105 enters the place of liquid crystal 102 thin thickness, form compensation with the thickness to liquid crystal 102, make liquid crystal 102 stressed even, reduce the scrappage of liquid crystal 102.
Claims (7)
1. semiconductor packages is improved device, be used for integrated circuit (101) is packaged into liquid crystal (102), it is characterized in that, comprise the pressing plate (103) that compressing power is provided and oppresses described integrated circuit, the base (104) that cooperates with described pressing plate (103) and be arranged at described base (104) and be positioned at described pressing plate (103) and described base (104) between thickness compensation element (105), described liquid crystal (102) is set on the described thickness compensation element (105), is used for the thickness of described liquid crystal (102) is compensated.
2. semiconductor packages as claimed in claim 1 is improved device, it is characterized in that, described base (104) comprises body (201), two stators (202), two strong magnetic pieces (203) and a plurality of fixture (204), described fixture (204) is fixed in described stator (202) two opposite sides of described body (201), described thickness compensation element (105) is positioned over the end face of described body (201), and two ends extend to two stators (202), two strong magnetic pieces (203) are adsorbed in described stator (202), so that the two ends of described thickness compensation element (105) are fixed.
3. semiconductor packages as claimed in claim 2 is improved device, it is characterized in that, two opposite ends of described strong magnetic piece (203) are bent upwards.
4. semiconductor packages as claimed in claim 1 is improved device, it is characterized in that, described thickness compensation element (105) is made of silica gel cloth and Teflon, and described Teflon is arranged on the described silica gel cloth.
5. semiconductor packages as claimed in claim 4 is improved device, it is characterized in that, described silica gel cloth thickness is 200um.
6. semiconductor packages as claimed in claim 5 is improved device, it is characterized in that, described Teflon thickness is 12um.
7. semiconductor packages as claimed in claim 1 is improved device, it is characterized in that, also comprises padded coaming (106), and described pressing plate (103) is being pressed described integrated circuit (101) by described padded coaming (106).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220425963 CN202871757U (en) | 2012-08-27 | 2012-08-27 | Semiconductor packaging improved device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220425963 CN202871757U (en) | 2012-08-27 | 2012-08-27 | Semiconductor packaging improved device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202871757U true CN202871757U (en) | 2013-04-10 |
Family
ID=48038450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220425963 Expired - Fee Related CN202871757U (en) | 2012-08-27 | 2012-08-27 | Semiconductor packaging improved device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202871757U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107481957A (en) * | 2017-07-31 | 2017-12-15 | 广东工业大学 | A kind of multi-chip synchronization inverted installation mechanism and its packaging technology |
-
2012
- 2012-08-27 CN CN 201220425963 patent/CN202871757U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107481957A (en) * | 2017-07-31 | 2017-12-15 | 广东工业大学 | A kind of multi-chip synchronization inverted installation mechanism and its packaging technology |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| DD01 | Delivery of document by public notice |
Addressee: Wuxi Zastron Precision-Flex Co., Ltd. Document name: Notification of Termination of Patent Right |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130410 Termination date: 20130827 |