CN202856691U - Control protection circuit of solid state microwave power amplifier - Google Patents

Control protection circuit of solid state microwave power amplifier Download PDF

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Publication number
CN202856691U
CN202856691U CN 201220473125 CN201220473125U CN202856691U CN 202856691 U CN202856691 U CN 202856691U CN 201220473125 CN201220473125 CN 201220473125 CN 201220473125 U CN201220473125 U CN 201220473125U CN 202856691 U CN202856691 U CN 202856691U
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CN
China
Prior art keywords
detection module
overcurrent
microwave power
overvoltage
voltage
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Expired - Lifetime
Application number
CN 201220473125
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Chinese (zh)
Inventor
高阳
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TIANWEI ELECTRONIC SYSTEM ENGINEERING Co Ltd XI'AN
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TIANWEI ELECTRONIC SYSTEM ENGINEERING Co Ltd XI'AN
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Priority to CN 201220473125 priority Critical patent/CN202856691U/en
Application granted granted Critical
Publication of CN202856691U publication Critical patent/CN202856691U/en
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Abstract

The utility model discloses a control protection circuit of a solid state microwave power amplifier. The control protection circuit of the solid state microwave power amplifier comprises an electric current transducer, a metal-oxide-semiconductor filed effect transistor (MOSFET) component, an overcurrent and overvoltage detection module and a photoelectric coupler (4), wherein, the overcurrent and overvoltage detection module comprises an overcurrent detection module and an overvoltage detection module. Positive pressure large current respectively accesses to the electric current transducer and the overvoltage detection module. Two output ends of the electric current transducer are respectively connected with the overcurrent detection module and the MOSFET component. The output ends of the overcurrent detection module and the overvoltage detection module, a power switch control signal and negative voltage are respectively connected with the photoelectric coupler. The output end of the photoelectric coupler is connected with the MOSFET component. The output end of MOSFET component is connected with a microwave power tube. The control protection circuit of a solid state microwave power amplifier contains the order of positive and negative pressure on the electricity, the overcurrent and overvoltage protection and control of the external control signal. The negative pressure can control the positive pressure to load. The negative pressure loads on the microwave power tube before the positive pressure. Meanwhile, the overcurrent and overvoltage protection is achieved.

Description

A kind of control protection electric circuit of solid state microwave power amplifier
Technical field
The utility model relates to a kind of overcurrent-overvoltage protecting circuit, is specifically related to a kind of solid state microwave power amplifier control protective circuit.
Background technology
In the high power solid state microwave power amplifier, use the power supply of large electric current, several amperes to tens amperes easily in electric current, power supply are if there is overcurrent-overvoltage, and power tube will be burnt within the extremely short time; Because existing GaAs, gallium nitride Microwave Power Tubes are the large electric currents by grid negative voltage control drain electrode, will be loaded into before the positive voltage on the Microwave Power Tubes by negate voltage, with control Microwave Power Tubes operating current in rated range, otherwise, the electric current that is loaded on the Microwave Power Tubes is uncontrolled, cause that electric current is excessive, excessive electric current will burn Microwave Power Tubes very soon.Simultaneously; the sequential control that present circuit negative pressure and malleation power on and overcurrent-overvoltage protecting circuit normally separate separately design; how effectively to carry out voltage control with the protection Microwave Power Tubes by the circuit setting; it is technology crucial in the solid state microwave Designing power amplifier; therefore; studying a kind of solid state microwave power amplifier control protective circuit, is that realistic meaning is arranged very much for the safe handling of Microwave Power Tubes.
Summary of the invention
For the defective that exists in the above-mentioned prior art or deficiency; the purpose of this utility model is; a kind of solid state microwave power amplifier control protective circuit is provided; this circuit has merged positive/negative-pressure electric sequence, over-current over-voltage protection, external control signal control; realized that negative voltage control positive voltage loads; negative voltage is loaded into Microwave Power Tubes prior to positive voltage, can realize over-current over-voltage protection simultaneously.
In order to realize above-mentioned task, the utility model is taked following technical solution:
A kind of overcurrent-overvoltage protecting circuit of solid state microwave power amplifier; comprise current sensor; power MOSFET device; overcurrent-overvoltage detection module and photoelectrical coupler; wherein; described overcurrent-overvoltage detection module comprises over-current detection module and overvoltage detection module; the large electric current of malleation accesses respectively current sensor and overvoltage detection module; two outputs of current sensor connect respectively over-current detection module and power MOSFET device; described over-current detection module; the output of overvoltage detection module accesses respectively photoelectrical coupler; mains switch control signal and negative voltage also access photoelectrical coupler; the output of photoelectrical coupler connects power MOSFET device, and the output of power MOSFET device connects Microwave Power Tubes.
Described overcurrent-overvoltage detection module adopts MC33161DG.
Described protective circuit comprises resistance R * 1, R*2, R*3, R*4, R1, R2, R3, capacitor C 2, C3, C4, C5, voltage stabilizing didoe V3, diode V1, V2, current sensor S1, power MOSFET device V4, overcurrent-overvoltage detection module MC33161DG, photoelectrical coupler N3 ,+5V voltage ,-5V voltage; Wherein:
The VCC interface of+5V voltage input and current transducer S1, the simultaneously positive pole by light-emitting diode in resistance R 1, the resistance R 2 access photoelectrical coupler N3;
The IP+ interface of the large electric current access of malleation current sensor S1, by the Input1 interface of resistance R * 2 access MC33161DG, resistance R * 1 one end ground connection are between the Input1 interface of other end access resistance R * 2 and MC33161DG simultaneously;
Be connected by resistance R * 4 between the V1OUT interface of current sensor S1 and the Input2 interface of MC33161DG, resistance R * 3 one end ground connection, the other end is connected between the Input2 interface of resistance R * 4 and MC33161DG; Be connected capacitor C 4 between the GND interface of current sensor S1 and the Input2 interface of MC33161DG, one termination of capacitor C 5 enters+and 5V voltage is between the VCC interface of current sensor S1, between the GND interface and capacitor C 4 of other end access current sensor S1, ground connection between capacitor C 4 and the C5; The IP-interface of current sensor S1 connects power MOSFET device V4, and resistance R 3 one terminations enter between the IP-interface and power MOSFET device V4 of current sensor S1, between the grid of other end access power MOSFET device V4 and voltage stabilizing didoe V3;
Between the input of VCC interface access+5V voltage and resistance R 1 of MC33161DG, and before access point, connect capacitor C 2, C3, the other end ground connection of capacitor C 2, C3; The negative pole of the Output1 interface access diode V1 of MC33161DG is between the positive pole access resistance R 1 and resistance R 2 of diode V1; The negative pole of the Output2 interface access diode V2 of MC33161DG is between the positive pole access resistance R 1 and resistance R 2 of diode V2;
-5V power supply is connected to transistor emitter end in the photoelectrical coupler N3 by voltage stabilizing didoe V3; The large electric current of power MOSFET device V4 output malleation is to Microwave Power Tubes; The negative pole end of light-emitting diode in the mains switch control signal access photoelectrical coupler N3.
Described voltage stabilizing didoe V3 is the 5.1V voltage stabilizing didoe.
The overcurrent-overvoltage protecting circuit of solid state microwave power amplifier of the present utility model, having realized must be after negative voltage power supply be working properly, positive voltage source just can be loaded on the Microwave Power Tubes, detect simultaneously the voltage and current that is loaded into positive voltage source on the Microwave Power Tubes, only at the voltage and current that is loaded into positive voltage source on the Microwave Power Tubes in the normal rating scope, positive voltage source could continue normal load to Microwave Power Tubes; Otherwise, need only negative pressure, positive voltage, this three's any one of positive voltage electric current and do not satisfy the setting requirement, will turn-off positive voltage source, play the effect of protection Microwave Power Tubes.Circuit of the present utility model is simple and reliable, can control by external control signal the switch on and off of positive voltage source, realizes negative voltage protection control by the 5.1V voltage stabilizing didoe, by the break-make of photoelectrical coupler power ratio control MOSFET device.
Description of drawings
Fig. 1 is the overcurrent-overvoltage protecting circuit schematic block circuit diagram of solid state microwave power amplifier of the present utility model.Label implication among the figure: 1, current sensor, 2, power MOSFET device, 3, the overcurrent-overvoltage detection module, 4, photoelectrical coupler, 3-1, over-current detection module, 3-2, overvoltage detection module.
Fig. 2 is circuit theory diagrams of the present utility model.
Fig. 3 is the internal frame diagram of element N2 MC33161DG.
The utility model is described in further detail below in conjunction with drawings and Examples.
Embodiment
Please refer to Fig. 1; the overcurrent-overvoltage protecting circuit of solid state microwave power amplifier of the present utility model; comprise current sensor 1; power MOSFET device 2; overcurrent-overvoltage detection module 3 and photoelectrical coupler 4; wherein; overcurrent-overvoltage detection module 3 comprises over-current detection module 3-1 and overvoltage detection module 3-2; the large electric current of malleation accesses respectively current sensor 1 and overvoltage detection module 3-2; two outputs of current sensor 1 connect respectively over-current detection module 3-1 and power MOSFET device 2; over-current detection module 3-1; the output of overvoltage detection module 3-2 accesses respectively photoelectrical coupler 4; mains switch control signal and negative voltage also access photoelectrical coupler 4; the output of photoelectrical coupler 4 connects power MOSFET device 2, and the output of power MOSFET device 2 connects Microwave Power Tubes.
The basic principle of circuit of the present utility model: when negative voltage, electric current, when Arbitrary Fault appears in voltage, realize automatically shutting down of large electric current by photoelectrical coupler 4 power ratio control MOSFET devices 2, thus the Microwave Power Tubes of protection power MOSFET device 2 rear ends; All in the normal situation, can pass through mains switch control signal (0,1) control photoelectrical coupler at negative voltage, electric current, voltage, thus the switch of the large electric current of power ratio control MOSFET device 2 realizations.
See also Fig. 3, in embodiment of the present utility model, overcurrent-overvoltage detection module 3 adopts element N2 MC33161DG, MC33161DG is inner integrated reference power supply and two comparators of two 1.27V, and these two comparators are used for respectively judging overcurrent and overvoltage.Change element MC33161DG input terminal voltage size and compare with internal reference voltage 1.27V, with regard to exportable high and low level.
See also Fig. 2, the components and parts that the overcurrent-overvoltage protecting circuit of the solid state microwave power amplifier of present embodiment is selected have: resistance R * 1, R*2, R*3, R*4, R1, R2, R3, capacitor C 2, C3, C4, C5,5.1V voltage stabilizing didoe V3, diode V1, V2, current sensor S1, power MOSFET device V4, overcurrent-overvoltage detection module MC33161DG, photoelectrical coupler N3 ,+5V voltage ,-5V voltage; Wherein:
The VCC interface of+5V voltage input and current transducer S1, the simultaneously positive pole by light-emitting diode in resistance R 1, the resistance R 2 access photoelectrical coupler N3;
The IP+ interface of the large electric current access of malleation current sensor S1, by the Input1 interface of resistance R * 2 access MC33161DG, resistance R * 1 one end ground connection are between the Input1 interface of other end access resistance R * 2 and MC33161DG simultaneously;
Be connected by resistance R * 4 between the V1OUT interface of current sensor S1 and the Input2 interface of MC33161DG, resistance R * 3 one end ground connection, the other end is connected between the Input2 interface of resistance R * 4 and MC33161DG;
Be connected capacitor C 4 between the GND interface of current sensor S1 and the Input2 interface of MC33161DG, one termination of capacitor C 5 enters+and 5V voltage is between the VCC interface of current sensor S1, between the GND interface and capacitor C 4 of other end access current sensor S1, ground connection between capacitor C 4 and the C5;
The IP-interface of current sensor S1 connects power MOSFET device V4, and resistance R 3 one terminations enter between the IP-interface and power MOSFET device V4 of current sensor S1, between the grid of other end access power MOSFET device V4 and 5.1V voltage stabilizing didoe V3;
Between the input of VCC interface access+5V voltage and resistance R 1 of MC33161DG, and before access point, connect capacitor C 2, C3, the other end ground connection of capacitor C 2, C3; The negative pole of the Output1 interface access diode V1 of MC33161DG is between the positive pole access resistance R 1 and resistance R 2 of diode V1; The negative pole of the Output2 interface access diode V2 of MC33161DG is between the positive pole access resistance R 1 and resistance R 2 of diode V2;
-5V power supply is connected to transistor emitter end in the photoelectrical coupler N3 by 5.1V voltage stabilizing didoe V3, and the large electric current of power MOSFET device V4 output malleation is to Microwave Power Tubes.
The negative pole end of light-emitting diode in the mains switch control signal access photoelectrical coupler N3.
Below be circuit control principle of the present utility model:
The negative pressure control principle of work and power: (A point)-5V power supply is by the emitter terminal in the 5.1V voltage stabilizing didoe connection photoelectrical coupler 4, the grid of power ratio control MOSFET device 2.When not having negative voltage, photoelectrical coupler 4 is equivalent to open circuit, and grid (B point) is high voltage, not conducting of power MOSFET device, and large electric current can't pass through; Only have when negative voltage is working properly, grid (B point) is equivalent to ground connection, and voltage is 0V, power MOSFET device 2 conductings, the large electric current of positive voltage could by and be loaded on the microwave power tube device.
The overcurrent protection control principle is as follows: current sensor 1 detects the size of the positive voltage electric current that passes through; direct proportion converts corresponding magnitude of voltage to; send into over-current detection module 3-1; by with over-current detection module 3-1 in standard voltage value compare; the operating state of output current; when electric current surpasses rated current; over-current detection module 3-1 output low level; the luminous end of photoelectrical coupler 4 (C point) is low level; can't conducting; photoelectrical coupler 4 is equivalent to open-circuit condition, and the grid of power MOSFET device 2 (B point) is high voltage, power MOSFET device 2 not conductings.
The overvoltage protection control principle is as follows: positive voltage source is sent into overvoltage detection module 3-2 by divider resistance R*1, R*2; by with overvoltage detection module 3-2 in standard voltage value compare; the operating state of output voltage; when voltage surpasses rated current, overvoltage detection module output low level, the luminous end of photoelectrical coupler 4 (C point) is low level; can't conducting; photoelectrical coupler 4 is equivalent to open-circuit condition, and grid (B point) is high voltage, power MOSFET device 2 not conductings.
Positive voltage source switching function principle is as follows: just can control the conducting of photoelectrical coupler 4 by the negative pole (D point) of (D point) control photoelectrical coupler 4 interior light-emitting diodes.In the normal situation of circuit working, the negative pole of photoelectrical coupler 4 interior light-emitting diodes (D point) is when being low level, photoelectrical coupler 4 conductings, and the grid of power MOSFET device 2 (B point) is low level, power MOSFET device 2 conductings, the positive voltage source normal load is to Microwave Power Tubes; Otherwise the negative pole of photoelectrical coupler 4 interior light-emitting diodes (D point) is when being high level, and positive voltage source is turn-offed, and plays the Switching Power Supply effect.
The voltage of the large electric current of malleation is sent into the high and low level of overvoltage detection module 3 outputs, overvoltage output low level by resistance R * 1 with the R*2 dividing potential drop successively; The size of current that current sensor 1 will pass through converts the relevant voltage signal to proportional relationship, sends into the high and low level of over-current detection module 3 outputs, the overcurrent output low level after this voltage signal process resistance R * 3, the R*4 dividing potential drop.When the A point does not have the negative voltage input, B point high level, power MOSFET device 2 not conductings, the output of E point no current, this has just guaranteed that negative voltage must be arranged first, the positive voltage of large electric current could be exported.When the A point has negative voltage input, when voltage, electric current were all normal, C point be high, and D point source switch controlling signal is when hanging down, and the B point is low, power MOSFET device 2 conductings, and the E point has electric current to export.When overcurrent or overvoltage occurring, the C point is low, power MOSFET device 2 not conductings, the output of E point no current.

Claims (2)

1. the control protection electric circuit of a solid state microwave power amplifier; it is characterized in that; comprise current sensor (1); power MOSFET device (2); overcurrent-overvoltage detection module (3) and photoelectrical coupler (4); wherein; described overcurrent-overvoltage detection module (3) comprises over-current detection module (3-1) and overvoltage detection module (3-2); the large electric current of malleation accesses respectively current sensor (1) and overvoltage detection module (3-2); two outputs of current sensor (1) connect respectively over-current detection module (3-1) and power MOSFET device (2); described over-current detection module (3-1); the output of overvoltage detection module (3-2) accesses respectively photoelectrical coupler (4); mains switch control signal and negative voltage also access photoelectrical coupler (4); the output of photoelectrical coupler (4) connects power MOSFET device (2), and the output of power MOSFET device (2) connects Microwave Power Tubes.
2. the control protection electric circuit of solid state microwave power amplifier as claimed in claim 1 is characterized in that, described overcurrent-overvoltage detection module (3) adopts MC33161DG.
CN 201220473125 2012-09-17 2012-09-17 Control protection circuit of solid state microwave power amplifier Expired - Lifetime CN202856691U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220473125 CN202856691U (en) 2012-09-17 2012-09-17 Control protection circuit of solid state microwave power amplifier

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Application Number Priority Date Filing Date Title
CN 201220473125 CN202856691U (en) 2012-09-17 2012-09-17 Control protection circuit of solid state microwave power amplifier

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CN202856691U true CN202856691U (en) 2013-04-03

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102857177A (en) * 2012-09-17 2013-01-02 西安天伟电子系统工程有限公司 Control and protection circuit for solid-state microwave power amplifier
CN104617547A (en) * 2015-02-15 2015-05-13 山东微感光电子有限公司 Dual-protection circuit for mine intrinsically safe power supply
CN109188941A (en) * 2018-09-14 2019-01-11 北京空间机电研究所 The hard sequential control circuit of space remote sensing camera CCD power supply

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102857177A (en) * 2012-09-17 2013-01-02 西安天伟电子系统工程有限公司 Control and protection circuit for solid-state microwave power amplifier
CN102857177B (en) * 2012-09-17 2015-04-29 西安天伟电子系统工程有限公司 Control and protection circuit for solid-state microwave power amplifier
CN104617547A (en) * 2015-02-15 2015-05-13 山东微感光电子有限公司 Dual-protection circuit for mine intrinsically safe power supply
CN104617547B (en) * 2015-02-15 2017-12-05 山东微感光电子有限公司 A kind of mine intrinsic safety electric source dual-protection circuit
CN109188941A (en) * 2018-09-14 2019-01-11 北京空间机电研究所 The hard sequential control circuit of space remote sensing camera CCD power supply

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