CN202855740U - AMOLED pixels structure - Google Patents

AMOLED pixels structure Download PDF

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Publication number
CN202855740U
CN202855740U CN 201220566179 CN201220566179U CN202855740U CN 202855740 U CN202855740 U CN 202855740U CN 201220566179 CN201220566179 CN 201220566179 CN 201220566179 U CN201220566179 U CN 201220566179U CN 202855740 U CN202855740 U CN 202855740U
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China
Prior art keywords
data
amoled
line
utility
model
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Expired - Fee Related
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CN 201220566179
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Chinese (zh)
Inventor
金正学
洪宣杓
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Sichuan CCO Display Technology Co Ltd
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Sichuan CCO Display Technology Co Ltd
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Priority to CN 201220566179 priority Critical patent/CN202855740U/en
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Publication of CN202855740U publication Critical patent/CN202855740U/en
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Abstract

The utility model provides an AMOLED pixel structure comprising an organic material area, a circuit element area, a scanning line, a data line, and a power line. The scanning line and the power line can be used to input a scanning signal and a data signal. The power line can be used to provide a power supply. The circuit element area comprises a transistor and a storage capacitor structure. The storage capacitor comprises two plate electrodes, which are respectively a data line and a transparent conductive file used as a pixel electrode. The utility model is advantageous in that the data line and the transparent conductive film used as the pixel electrode are used as two electrodes of the storage capacitor; the data line is disposed on a periphery of the transparent conductive film; the aperture ratio of the pixel structure can be improved, and the service lifetime of the display device can be prolonged at the same time; because the data metal flex cable has the isolation function of separating the colors, the AMOLED pixel structure can be used to improve the color purity of the panel.

Description

A kind of AMOLED dot structure
Technical field
The utility model belongs to the Display Technique field, is specifically related to a kind of AMOLED dot structure.
Background technology
In flat panel display, many merits such as display is frivolous with it for Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED), active illuminating, fast-response speed, wide viewing angle, rich color and high brightness, low-power consumption, high-low temperature resistant and to be known as by industry be third generation Display Technique after liquid crystal display (LCD).Active OLED(Active Matrix OLED, AMOLED) be also referred to as active matrix OLED, AMOLED is because driving by integrated thin-film transistor (TFT) and capacitor in each pixel and by the method that capacitor is kept voltage, thereby can realize large scale, resolution panels, be the emphasis of current research and the developing direction of following Display Technique.
AMOLED can be divided into back side illuminated mode and two kinds of comprehensive illumination modes according to luminous mode.Therefore illumination mode the problem of aperture opening ratio can not occur to not restriction of aperture opening ratio comprehensively, very high but it makes unit price.Therefore, a lot of companies are developing the AMOLED display unit of back side illuminated formula in order to solve the problem of making unit price.Although back side illuminated has the low advantage of exploitation unit price, aperture opening ratio is low, and the quality of panel is bad.Therefore, the developer has use up a lot of effort in order to improve aperture opening ratio.
The basic pixel circuit structure of AMOLED is to utilize 2TFT1CAP structure shown in Figure 1, consist of panel, basic pixel circuit specifically forms by 2 transistors with by 1 capacitor C 1, one in described two transistors are driving transistorss, be used for luminous according to the driving organic light emission original paper D1 of data-signal, another is switching transistor, is used for opening and closing the path that data-signal writes storage capacitance.Connect driving at organic illuminating element D1 and use thin-film transistor, luminous electric current is provided; In addition, drive with the magnitude of current of thin-film transistor and controlled by the DATA voltage of inputting by switching thin-film transistor, capacitor C 1 was connected between the source electrode that drives thin-film transistor and the grid and was used for keeping in the given time the voltage that applies this moment, and the grid of switching thin-film transistor is connected with source electrode with scan line and is connected with data wire.Scrutinize the action of Fig. 1, can find that the signal of inputting on the grid of switching thin-film transistor according to switching thin-film transistor moves, data voltage signal is driving with on the grid of thin-film transistor by the data wire input.Input is used thin-film transistor at the data voltage of grid by driving, and current flowing is arranged on the organic illuminating element, makes it luminous, and organic illuminating element distributes light according to the size of the electric current that injects.
As shown in Figure 2, in existing technology, usage data metal winding displacement DATA and gate metal winding displacement consist of electric capacity during the image element circuit of design AMOLED, and the storage capacitance that described prior art forms will take larger panel area, and the aperture opening ratio of panel is restricted.
The utility model content
The purpose of this utility model is to consist of electric capacity and can take the problem that aperture opening ratio that larger panel space makes the AMOLED panel of manufacturing is restricted in order to solve usage data metal winding displacement and gate metal winding displacement in the existing AMOLED dot structure, has proposed a kind of AMOLED dot structure.
The technical solution of the utility model is: a kind of AMOLED dot structure, comprise organic material sections, circuit element district, scan line SCAN, data wire DATA and power line VDD, described scan line and data wire are used for input scan signal and data-signal, and described power line is used for providing power supply;
Described circuit element district comprises transistor and storage capacitor construction;
It is characterized in that, described storage capacitance comprises two battery lead plates, and described battery lead plate is respectively described data wire DATA and as the nesa coating of pixel electrode.
Above-mentioned nesa coating material is ITO or IZO.
Above-mentioned data wire DATA be distributed in nesa coating around.
The beneficial effects of the utility model: the utility model is by usage data line DATA with as the nesa coating of pixel electrode two electrodes as storage capacitance, and adopt data wire DATA to be distributed in nesa coating structure all around, the aperture opening ratio of the dot structure of structure is improved, the life-span of also having improved display unit simultaneously.Because data metal winding displacement has the effect of the isolation of separate color, so use AMOLED dot structure of the present utility model can also improve the purity of the color of panel.
Description of drawings
Fig. 1 is the schematic diagram of the 2T1C image element circuit of existing AMOLED.
Fig. 2 is the dot structure figure of existing AMOLED.
Fig. 3 is the dot structure figure of AMOLED of the present utility model.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the utility model is further elaborated.
The purpose of this utility model provides the higher AMOLED dot structure of a kind of aperture opening ratio.
Be illustrated in figure 3 as a kind of AMOLED dot structure of the present embodiment, comprise organic material sections, circuit element district, scan line SCAN, data wire DATA and power line VDD, described scan line and data wire are used for input scan signal and data-signal, and described power line is used for providing power supply;
Described circuit element district comprises transistor and storage capacitor construction;
It is characterized in that, described storage capacitance comprises two battery lead plates, and described battery lead plate is respectively described data wire DATA and as the nesa coating of pixel electrode.
Above-mentioned nesa coating material is ITO or IZO.
Above-mentioned data wire DATA be distributed in nesa coating around.
Those of ordinary skill in the art will appreciate that, embodiment described here is in order to help reader understanding's principle of the present utility model, should to be understood to that protection range of the present utility model is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combinations that do not break away from the utility model essence according to disclosed these technology enlightenments of the utility model, and these distortion and combination are still in protection range of the present utility model.

Claims (3)

1. an AMOLED dot structure comprises organic material sections, circuit element district, scan line SCAN, data wire DATA and power line VDD, and described scan line and data wire are used for input scan signal and data-signal, and described power line is used for providing power supply;
Described circuit element district comprises transistor and storage capacitor construction;
It is characterized in that, described storage capacitance comprises two battery lead plates, and described battery lead plate is respectively described data wire DATA and as the nesa coating of pixel electrode.
2. a kind of AMOLED dot structure according to claim 1, described nesa coating material is ITO or IZO.
3. a kind of AMOLED dot structure according to claim 1, described data wire DATA be distributed in nesa coating around.
CN 201220566179 2012-10-31 2012-10-31 AMOLED pixels structure Expired - Fee Related CN202855740U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220566179 CN202855740U (en) 2012-10-31 2012-10-31 AMOLED pixels structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220566179 CN202855740U (en) 2012-10-31 2012-10-31 AMOLED pixels structure

Publications (1)

Publication Number Publication Date
CN202855740U true CN202855740U (en) 2013-04-03

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CN 201220566179 Expired - Fee Related CN202855740U (en) 2012-10-31 2012-10-31 AMOLED pixels structure

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CN (1) CN202855740U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109950290A (en) * 2019-04-03 2019-06-28 维沃移动通信有限公司 AMOLED display screen, display equipment and mobile terminal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109950290A (en) * 2019-04-03 2019-06-28 维沃移动通信有限公司 AMOLED display screen, display equipment and mobile terminal

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130403

Termination date: 20201031

CF01 Termination of patent right due to non-payment of annual fee