CN202749826U - High-power active filter unit structure - Google Patents
High-power active filter unit structure Download PDFInfo
- Publication number
- CN202749826U CN202749826U CN2012203549089U CN201220354908U CN202749826U CN 202749826 U CN202749826 U CN 202749826U CN 2012203549089 U CN2012203549089 U CN 2012203549089U CN 201220354908 U CN201220354908 U CN 201220354908U CN 202749826 U CN202749826 U CN 202749826U
- Authority
- CN
- China
- Prior art keywords
- shell
- bipolar transistor
- power active
- electrolytic capacitor
- active filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/20—Active power filtering [APF]
Abstract
The utility model discloses a high-power active filter unit structure comprising an alternating current output copper bar (4), a radiator (6), an electrolytic capacitor (2), a shell (1), an insulating grid bipolar transistor (5) and a laminated busbar (3); the laminated busbar is connected with the insulating grid bipolar transistor (5) and the electrolytic capacitor (2), the insulating grid bipolar transistor (5) and the electrolytic capacitor (2) are horizontally arranged in an upper-lower layer manner in the shell (1), upper and lower radiating air channel openings are respectively formed in shell bodies on two sides of the shell (1), the upper radiating air channel opening (8) is corresponding to the internal space of the shell (1) in which the electrolytic capacitor (2) is located, and the lower radiating air channel opening (7) is corresponding to the internal space of the shell (1) in which the insulating grid bipolar transistor (5) and the radiator (6) are located. The high-power active filter unit structure can solves the technical problems of the conventional high-power active filters of large radiating air resistance, relatively large volume, instable electric property caused by high stray inductance, and the like.
Description
Technical field
The utility model belongs to the reactive power compensator of electric power system.
Background technology
Traditional static reacance generator power cell exists the deficiency of following three aspects:: the heat radiation windage is large, volume is large and because stray inductance is high, electric property is unstable etc.
Summary of the invention
The purpose of this utility model provides a kind of high-power active filter cellular construction, and the heat radiation windage that traditional high-power active filter exists is large to solve, volume is large and because the technical problem such as stray inductance is high, and electric property is unstable.
In order to realize the foregoing invention purpose, the technical scheme that the utility model adopts is as follows:
A kind of high-power active filter cellular construction, it comprises exchanging exports copper bar (4), radiator (6), electrochemical capacitor (2), shell (1), insulated gate bipolar transistor (5) and stack bus bar (3); Adopt stack bus bar to connect insulated gate bipolar transistor (5) and electrochemical capacitor (3), insulated gate bipolar transistor (5) is arranged with electrochemical capacitor (3) minute upper and lower two-layer level in shell (1), on the housing of shell (1) both sides, have upper and lower two radiation air road junctions, upper radiation air road junction (8) is corresponding to shell (1) inner space at electrochemical capacitor (3) place, and lower radiation air road junction (7) is corresponding to shell (1) inner space at insulated gate bipolar transistor (5) and radiator (6) place.
The beneficial effects of the utility model:
1, the air channel is relatively independent, and windage is less, and the life-span of radiating efficiency and device all is improved.
2, the application of stack bus bar makes stray inductance below 20nH, has stable electric property.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
Structure of the present utility model is referring to Fig. 1.It comprises exchanging exports copper bar (4), radiator (6), electrochemical capacitor (2), shell (1), insulated gate bipolar transistor (5) and stack bus bar (3); Adopt stack bus bar to connect insulated gate bipolar transistor (5) and electrochemical capacitor (3), insulated gate bipolar transistor (5) is arranged with electrochemical capacitor (3) minute upper and lower two-layer level in shell (1), on the housing of shell (1) both sides, have upper and lower two radiation air road junctions, upper radiation air road junction (8) is corresponding to shell (1) inner space at electrochemical capacitor (3) place, and lower radiation air road junction (7) is corresponding to shell (1) inner space at insulated gate bipolar transistor (5) and radiator (6) place.
The utility model makes power cell form two air channels in housing, so that IGBT and electrochemical capacitor can dispel the heat, and the air channel is relatively independent, and windage is less, and the life-span of radiating efficiency and device all is improved.
Adopt stack bus bar to connect IGBT and electrochemical capacitor, stack bus bar is the application structure of a kind of conductor and insulating material lamination, and stray inductance has stable electric property below 20nH.
Claims (1)
1. high-power active filter cellular construction, it comprises and exchanges output copper bar (4), radiator (6), electrochemical capacitor (2), shell (1), insulated gate bipolar transistor (5) and stack bus bar (3); It is characterized in that, adopt stack bus bar to connect insulated gate bipolar transistor (5) and electrochemical capacitor (3), insulated gate bipolar transistor (5) divides in shell (1) with electrochemical capacitor (3), lower two-layer level is arranged, on the housing of shell (1) both sides, have, lower two radiation air road junctions, upper radiation air road junction (8) is corresponding to shell (1) inner space at electrochemical capacitor (3) place, and lower radiation air road junction (7) is corresponding to shell (1) inner space at insulated gate bipolar transistor (5) and radiator (6) place.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203549089U CN202749826U (en) | 2012-07-20 | 2012-07-20 | High-power active filter unit structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012203549089U CN202749826U (en) | 2012-07-20 | 2012-07-20 | High-power active filter unit structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202749826U true CN202749826U (en) | 2013-02-20 |
Family
ID=47709178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012203549089U Withdrawn - After Issue CN202749826U (en) | 2012-07-20 | 2012-07-20 | High-power active filter unit structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202749826U (en) |
-
2012
- 2012-07-20 CN CN2012203549089U patent/CN202749826U/en not_active Withdrawn - After Issue
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130220 Effective date of abandoning: 20201013 |