CN202738233U - Universal electronic ballast - Google Patents
Universal electronic ballast Download PDFInfo
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- CN202738233U CN202738233U CN 201220160564 CN201220160564U CN202738233U CN 202738233 U CN202738233 U CN 202738233U CN 201220160564 CN201220160564 CN 201220160564 CN 201220160564 U CN201220160564 U CN 201220160564U CN 202738233 U CN202738233 U CN 202738233U
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Abstract
The utility model provides a universal electronic ballast. The electronic ballast comprises a ballast inductor serially connected with a lamp, a high-frequency current generating circuit for generating high-frequency currents flowing through the lamp and the ballast inductor and a control circuit. The control circuit which adopts an MCU as a core controls the current and the voltage of the lamp. The universal electronic ballast which is distinguished from the current 3-grade hardware switch technology adopts an independently-developed one-chip microcomputer two-grade control means. Components are significantly reduced. The cost is lowered to the minimum. The circuit principle is suitably applied in electronic ballasts with all wattages. A revolutionary change is thus generated in the electronic ballast industry.
Description
Technical field
The utility model relates to the electric ballast field, and particularly a kind of microprocessor that utilizes is as the electric ballast of controller.
Background technology
Electric ballast (Electronic ballast) is a kind of of ballast, refers to adopt electronic technology to drive electric light source, makes it to produce the electronic equipment of required illumination.Corresponding is inductance type ballast (or ballast) with it.Modern fluorescent lamp more and more uses electric ballast, and is light small and exquisite, even electric ballast and fluorescent tube etc. can be integrated, and simultaneously, electric ballast can have the starter function concurrently usually, so can save independent starter again.Electric ballast can also have greater functionality, such as the scintillation that can improve or eliminate by improving power frequency or current waveform (as becoming square wave) fluorescent lamp; Also can be by the power inverter process so that fluorescent lamp can use DC power supply.
Electric ballast has become one of content of implementing green illumination as a kind of energy-saving illumination electrical equipment.(be called for short HID) because low-power metal halide lamp and have than the more intensive frequency band of high-power HID and wider acoustic resonance frequency spectrum, make the HID of high-frequency work meet with serious acoustic resonance problem, adopting low-frequency square-wave voltage to drive HID is best solution.
Conversion efficiency is low, temperature rise owing to existing for the metal halogen lamp electric ballast of three grades of formula full-bridge types of domestic extensive employing power conversion at present, add the MOSFET power device and work in the heavily stressed of hard switching state and control mode imperfection, reduce stability and reliability, brought a series of stubborn problems for production and application.
[0005] summary of the invention
For the metal halogen lamp electric ballast that solves present three grades of formula full-bridge type power conversions owing to having that conversion efficiency is low, the deficiency of temperature rise, the utility model provides a kind of two-stage type (two BUCK) soft switch technique take Micro-processor MCV as the core control technology, have higher efficient and lower cost, fundamentally improved reliability and stability.
The technical solution of the utility model is: a kind of General electronic ballast, and comprise the ballast inductance device of connecting with lamp, and produce high-frequency current generation circuit and the control circuit of the high-frequency current of flowing through lamps and ballast inductance device, it is characterized in that:
Described high current generating circuit comprises metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2, energy storage capacitor E1 and energy storage capacitor E2, sustained diode 1 and sustained diode 3;
The grid of described metal-oxide-semiconductor Q1 connects described control circuit, drain electrode connects the working power of lamp, source electrode is connected with described lamp L through described ballast inductance device L1, and the other end of lamp L links to each other with the negative electrode of described energy storage capacitor E1, and the anode of energy storage capacitor E1 connects the working power of lamp; Between the source electrode of described metal-oxide-semiconductor Q1 and drain electrode, connect described sustained diode 1;
The grid of described metal-oxide-semiconductor Q2 connects described control circuit, and drain electrode is connected with described lamp L through described ballast inductance device L1, and the other end of lamp L links to each other with the anode of described energy storage capacitor E2, and the negative electrode of energy storage capacitor E2 connects the source electrode of described metal-oxide-semiconductor Q2; Between the source electrode of described metal-oxide-semiconductor Q2 and drain electrode, connect described sustained diode 3;
Described control circuit comprises microprocessor, driving and modulation circuit, electric current and voltage detecting circuit;
Described electric current and voltage detecting circuit are measured respectively electric current and the voltage of lamp L, and Output rusults connects described processor;
Described processor produces the signal of determining the described metal-oxide-semiconductor Q1 of control and metal-oxide-semiconductor Q2 switching time according to the testing result of described electric current and voltage detecting circuit and the control program of itself and connects described driving and modulation circuit;
Described driving links to each other with the grid of described metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 respectively with the signal that modulation circuit produces the described metal-oxide-semiconductor Q1 of control and metal-oxide-semiconductor Q2 switch.
Further, in the above-mentioned General electronic ballast: also comprise clamp diode D2 and clamp diode D4;
The anode of described clamp diode D2 connects the source electrode of metal-oxide-semiconductor Q1, and clamp diode D2 negative electrode meets described ballast inductance device L;
The negative electrode of described clamp diode D4 connects the drain electrode of metal-oxide-semiconductor Q2, and clamp diode D4 anode meets described ballast inductance device L.
Further, in the above-mentioned General electronic ballast: comprise reference voltage sample circuit and lamp current sense circuit and pulse-width modulation circuit, the lamp current signal that the voltage signal that described reference voltage sample circuit sampling obtains and lamp current sense circuit obtain is input to respectively described pulse-width modulation circuit, and the relevant magnitude of voltage of output and current value are input to described microprocessor after modulating in pulse-width modulation circuit.
Further, in the above-mentioned General electronic ballast: described lamp current sense circuit comprises that primary coil is connected in series to isolating transformer L2 and the lamp current detector in the series circuit of lamp L and town inductor L1, the friendship level coil two termination lamp current detectors of described isolating transformer L2; Described reference voltage sample circuit connects the source electrode of described metal-oxide-semiconductor Q2.
Further, in the above-mentioned General electronic ballast: the working power of described lamp comprises EMI and PFC, and the input termination civil power of described EMI outputs to later on the working power that produces 400V in the pfc circuit through filtering.
[0011]The utility model is different from 3 grades of present hardware switch technology, adopts 2 grades of control modes of single-chip microcomputer of independent development, has greatly saved components and parts, cost is dropped to minimum, and the utility model circuit theory is applicable to the electric ballast of all wattages and uses.Bring revolutionary variation for the electric ballast industry.
Below in conjunction with specific embodiment the utility model is done comparatively detailed description.
Description of drawings
Fig. 1 is ballast circuit schematic diagram of the present utility model.
Fig. 2 is the utility model embodiment 1 ballast schematic diagram.
Embodiment
Embodiment 1, as shown in Figure 1 and Figure 2, the present embodiment is that a kind of single-chip microcomputer that utilizes is as the electric ballast of master controller, the processor of this ballast is by detecting the particularly voltage and current feature of power saving fluorescent lamps or other low-power metal halide lamp of lamp, then utilize its inner program to produce control signal and then by modulation and drive circuit the metal-oxide-semiconductor as switch is controlled, output is fit to the voltage of lamp works or startup.As shown in Figure 1: the General electronic ballast of the present embodiment comprises the ballast inductance device L1 that connects with lamp L, and produces high-frequency current generation circuit and the control circuit take Micro-processor MCV as core of the high-frequency current of flowing through lamps L and ballast inductance device L1.Wherein:
High current generating circuit comprises metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2, energy storage capacitor E1 and energy storage capacitor E2, sustained diode 1 and sustained diode 2, clamp diode D2 and clamp diode D4.
The grid connection control circuit of metal-oxide-semiconductor Q1, obtain the control signal that control switch leaves or closes from control circuit, drain electrode connects the working power of lamp, source electrode is connected with lamp L through ballast inductance device L1, the other end of lamp L links to each other with the negative electrode of energy storage capacitor E1, and the anode of energy storage capacitor E1 connects the working power of lamp; Sustained diode 1 between the source electrode of metal-oxide-semiconductor Q1 and drain electrode.In the present embodiment, the working power of lamp comprises EMI and PFC, and the input termination civil power of EMI is input to later on the working power that produces 400V in the pfc circuit through filtering.Carry out fast open/close according to the command M OS pipe Q1 that processes and produce alternating current for lamp L.Do not provide the working power circuit of lamp among Fig. 1, the working power circuit of this lamp is from the drain electrode input of metal-oxide-semiconductor Q1.As shown in Figure 2.
The grid connection control circuit of metal-oxide-semiconductor Q2, obtain the control signal that control switch leaves or closes from control circuit, drain electrode is connected with described lamp L through ballast inductance device L1, and the other end of lamp L links to each other with the anode of energy storage capacitor E2, and the negative electrode of energy storage capacitor E2 connects the source electrode of metal-oxide-semiconductor Q2; Between the source electrode of metal-oxide-semiconductor Q2 and drain electrode, connect sustained diode 3.
The anode of clamp diode D2 connects the source electrode of metal-oxide-semiconductor Q1, and clamp diode D2 negative electrode meets ballast inductance device L; The negative electrode of clamp diode D4 connects the drain electrode of metal-oxide-semiconductor Q2, and clamp diode D4 anode meets ballast inductance device L.
In the present embodiment, control circuit is crucial, and it is the control circuit of core that the present embodiment adopts by single-chip microcomputer, produces control signal and opens/close the control of finishing lamp L by driven MOS pipe Q1 and metal-oxide-semiconductor Q1.
Control circuit comprises Micro-processor MCV, driving and modulation circuit, electric current and voltage detecting circuit;
Electric current and voltage detecting circuit are measured respectively electric current and the voltage of lamp L, and Output rusults connects described processor; Electric current and voltage detecting circuit comprise reference voltage sample circuit and lamp current sense circuit and pulse-width modulation circuit, the lamp current signal that the voltage signal that the sampling of reference voltage sample circuit obtains and lamp current sense circuit obtain is input to respectively pulse-width modulation circuit, and the relevant magnitude of voltage of output and current value are input to microprocessor after modulating in pulse-width modulation circuit.Lamp current sense circuit comprises that primary coil is connected in series to isolating transformer L2 and the lamp current detector in the series circuit of lamp L and town inductor L1, the secondary coil two termination lamp current detectors of isolating transformer L2; The reference voltage sample circuit connects the source electrode of described metal-oxide-semiconductor Q2.
Processor produces the signal of determining the described metal-oxide-semiconductor Q1 of control and metal-oxide-semiconductor Q2 switching time according to the testing result of electric current and voltage detecting circuit and the control program of itself and connects described driving and modulation circuit.
Drive with the signal of modulation circuit generation control metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 switch and link to each other with the grid of described metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 respectively.
After machine powered on, Q1, Q2 were operated in the HF switch state, and MCU exports high frequency square wave, than frequency sweep until the capacitor resonance at L1 and lamp two ends bulb is lighted.After lighting, Q1, Q2 enter two BUCK mode of operations, and specific as follows: Q1 is operated in the high frequency state, and Q2 closes, current direction: Q1 → D2 → L1 → LAMP, and Q1 closes, and Q2 is operated in the high frequency state, current direction: LAMP → L1 → D4 → Q2, so circulation is gone down.While is the sensed lamp current modulating voltage ceaselessly, in case bulb has unusual or wiring is unusual, single-chip microcomputer just cuts out PWM output, plays a protective role.
Claims (1)
1. a General electronic ballast comprises the ballast inductance device of connecting with lamp, and produces high-frequency current generation circuit and the control circuit of the high-frequency current of flowing through lamps and ballast inductance device, it is characterized in that:
Described high-frequency current produces circuit and comprises metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2, energy storage capacitor E1 and energy storage capacitor E2, sustained diode 1 and sustained diode 3;
The grid of described metal-oxide-semiconductor Q1 connects described control circuit, drain electrode connects the working power of lamp, source electrode is connected with described lamp L through described ballast inductance device L1, and the other end of lamp L links to each other with the negative electrode of described energy storage capacitor E1, and the anode of energy storage capacitor E1 connects the working power of lamp; Between the source electrode of described metal-oxide-semiconductor Q1 and drain electrode, connect described sustained diode 1;
The grid of described metal-oxide-semiconductor Q2 connects described control circuit, and drain electrode is connected with described lamp L through described ballast inductance device L1, and the other end of lamp L links to each other with the anode of described energy storage capacitor E2, and the negative electrode of energy storage capacitor E2 connects the source electrode of described metal-oxide-semiconductor Q2; Between the source electrode of described metal-oxide-semiconductor Q2 and drain electrode, connect described sustained diode 3;
Described control circuit comprises microprocessor, driving and modulation circuit, electric current and voltage detecting circuit;
Described electric current and voltage detecting circuit are measured respectively electric current and the voltage of lamp L, and Output rusults connects described processor;
Described processor connects described driving and modulation circuit;
Described driving links to each other with the grid of described metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 respectively with the signal that modulation circuit produces the described metal-oxide-semiconductor Q1 of control and metal-oxide-semiconductor Q2 switch.
2, General electronic ballast according to claim 1 is characterized in that: also comprise clamp diode D2 and clamp diode D4;
The anode of described clamp diode D2 connects the source electrode of metal-oxide-semiconductor Q1, and clamp diode D2 negative electrode meets described ballast inductance device L1;
The negative electrode of described clamp diode D4 connects the drain electrode of metal-oxide-semiconductor Q2, and clamp diode D4 anode meets described ballast inductance device L1.
3, General electronic ballast according to claim 1, it is characterized in that: described electric current and voltage detecting circuit comprise reference voltage sample circuit and lamp current sense circuit and pulse-width modulation circuit, the lamp current signal that the voltage signal that described reference voltage sample circuit sampling obtains and lamp current sense circuit obtain is input to respectively described pulse-width modulation circuit, and the relevant magnitude of voltage of output and current value are input to described microprocessor after modulating in pulse-width modulation circuit.
4, General electronic ballast according to claim 3, it is characterized in that: described lamp current sense circuit comprises that primary coil is connected in series to isolation depressor L2 and the current detector in the series circuit of lamp L and town inductor L1, the secondary coil two termination lamp current detectors of described isolating transformer L2; Described reference voltage sample circuit connects the source electrode of described metal-oxide-semiconductor Q2.
5, arbitrary described General electronic ballast in 4 according to claim 1, it is characterized in that: the working power of described lamp comprises EMI and PFC, the input termination civil power of described EMI outputs to later on the working power that produces 400V in the pfc circuit through filtering.
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CN 201220160564 CN202738233U (en) | 2012-04-17 | 2012-04-17 | Universal electronic ballast |
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CN 201220160564 CN202738233U (en) | 2012-04-17 | 2012-04-17 | Universal electronic ballast |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102665367A (en) * | 2012-04-17 | 2012-09-12 | 陈洪川 | General-purpose electronic ballast |
CN110139453A (en) * | 2019-05-05 | 2019-08-16 | 莫夫 | A kind of lighting apparatus for discharge lamp and its ignition method |
WO2021093165A1 (en) * | 2019-11-15 | 2021-05-20 | 深圳市朗文科技实业有限公司 | Control method for electronic ballast of gas discharge (hid) lamp, and control circuit |
-
2012
- 2012-04-17 CN CN 201220160564 patent/CN202738233U/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102665367A (en) * | 2012-04-17 | 2012-09-12 | 陈洪川 | General-purpose electronic ballast |
CN102665367B (en) * | 2012-04-17 | 2014-06-25 | 陈洪川 | General-purpose electronic ballast |
CN110139453A (en) * | 2019-05-05 | 2019-08-16 | 莫夫 | A kind of lighting apparatus for discharge lamp and its ignition method |
CN110139453B (en) * | 2019-05-05 | 2021-06-22 | 广东科技学院 | Discharge lamp lighting device and lighting method thereof |
WO2021093165A1 (en) * | 2019-11-15 | 2021-05-20 | 深圳市朗文科技实业有限公司 | Control method for electronic ballast of gas discharge (hid) lamp, and control circuit |
US11277891B2 (en) | 2019-11-15 | 2022-03-15 | Shenzhen Number Energy Saving Corporation | Control method and control circuit of electronic ballast of gas discharge lamp (HID) |
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Legal Events
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180111 Address after: 518000 Guangdong Shenzhen Longgang District Gang Bay Community color cloud one road No. 6 Patentee after: Shenzhen Langwen Technology Industrial Co., Ltd. Address before: Buji Ping Eru Kingsway Industrial Park of Longgang District, Shenzhen city 518000 Guangdong 2 Building 5 floor Patentee before: Chen Hongchuan |
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TR01 | Transfer of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20130213 |
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CX01 | Expiry of patent term |