CN202712251U - Nanoscale light emitting diode - Google Patents
Nanoscale light emitting diode Download PDFInfo
- Publication number
- CN202712251U CN202712251U CN 201220296028 CN201220296028U CN202712251U CN 202712251 U CN202712251 U CN 202712251U CN 201220296028 CN201220296028 CN 201220296028 CN 201220296028 U CN201220296028 U CN 201220296028U CN 202712251 U CN202712251 U CN 202712251U
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- nanoscale
- nanometer layer
- emitting diode
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- conductive metal
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Abstract
The utility model discloses a nanoscale light emitting diode. The nanoscale light emitting diode comprises a matrix. A first nanolayer and a second nanolayer are arranged on the surface of the matrix successively in a layered manner. The first nanolayer is formed by connecting nanoscale highly conductive metal wires. The highly conductive metal wires are surrounded around the layer surface of the first nanolayer, and are connected onto the contact which is located at the middle portion of the matrix at the same time. The second nanolayer is formed by combining a plurality of nanometer semiconductor particles. The nanometer semiconductor particles are uniformly arranged on the layer surface of the second nanolayer which is around the contact which is located at the middle portion of the matrix. According to the utility model, advantages of simple structure and convenient fabrication are realized, the uniform current diffusion of the light emitting diode can be effectively facilitated, and the light output efficiency can be improved.
Description
Technical field
The utility model relates to a kind of light-emitting diode, is specifically related to a kind of nanoscale light-emitting diode.
Background technology
Light-emitting diode (LED) can be luminous after electric current injected metallic object and evenly spread.But along with the even diffusion of LED Injection Current, shading-area also can rise thereupon; If instead reduction shading-area, electric current then can be gathered in the electrode two ends, reduce LED usefulness.
The utility model content
The purpose of this utility model is to overcome above-mentioned the deficiencies in the prior art, provides a kind of by adopting physical method, can help electric current evenly to spread and can increase the nanoscale light-emitting diode of light extraction efficiency.
A kind of nanoscale light-emitting diode comprises matrix, and described matrix surface successively layer is provided with the first nanometer layer and the second nanometer layer;
Described the first nanometer layer is connected and composed by nanoscale high-conductive metal line, and described high-conductive metal wire loop and is connected on the contact at matrix middle part around the aspect of the first nanometer layer simultaneously,
Described the second nanometer layer is constituted by several Nano semiconductor particles, and described Nano semiconductor particles is evenly arranged on the aspect of the second nanometer layer around the contact, matrix middle part.
Nanoscale high-conductive metal line collocation in described the first nanometer layer has transparency conducting layer.
Nanoscale high-conductive metal line in described the first nanometer layer can adopt has the nano dot replacement that can help the even expanding of electric current.
Nano semiconductor particles in described the second nanometer layer can adopt the insulator that approaches with the semi-conducting material refractive index to replace.
The metal material of the nanoscale high-conductive metal line in described the first nanometer layer is gold or silver or aluminium.
Transparency conducting layer in described the first nanometer layer is the tin-doped indium oxide nesa coating, mix indium zinc oxide transparent conducting film, aluminum-doped zinc oxide transparent conducting film.
The utility model is simple in structure, easily manufactured, can effectively help the even diffusion of electric current of light-emitting diode and can increase light extraction efficiency.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the structural representation of the utility model the first nanometer layer.
Fig. 3 is the structural representation of the utility model the second nanometer layer.
Embodiment
Embodiment 1
Referring to Fig. 1, a kind of nanoscale light-emitting diode that the utility model provides comprises matrix 1, and described matrix 1 surface successively layer is provided with the first nanometer layer 2 and the second nanometer layer 3,
Referring to Fig. 2, described the first nanometer layer 2 is connected and composed by nanoscale high-conductive metal line 2a, and in the present embodiment, this high-conductive metal line 2a adopts gold nanowire, gold nanowire is looped around around the aspect of the first nanometer layer 2, and is connected to simultaneously on the contact 1a at matrix 1 middle part.The purpose of design of this first nanometer layer structure is for helping the even diffusion of electric current, and the metal material of described high-conductive metal line 2a also can use silver with high conductivity matter, aluminium etc.
Referring to Fig. 3, described the second nanometer layer 3 is that several Nano semiconductor particles 3a is evenly arranged on the aspect of matrix 1 middle part contact 1a the second nanometer layer 3 on every side.The purpose of design of this second nanometer layer structure is for increasing the taking-up efficient of light.
The difference of the present embodiment and embodiment 1 is: the transparency conducting layer of also can arranging in pairs or groups of the nanoscale high-conductive metal line 2a in described the first nanometer layer 2, improve the evenly effect of diffusion of electric current.This transparency conducting layer can be ITO(tin-doped indium oxide nesa coating), IZO(mixes the indium zinc oxide transparent conducting film), AZO(aluminum-doped zinc oxide transparent conducting film) etc.
The present embodiment and embodiment 1,2 difference are: the nanoscale high-conductive metal line 2a in described the first nanometer layer 2 also can adopt to have the nano dot that can help the even expanding of electric current and replaces, but the transparency conducting layer of must arranging in pairs or groups evenly spreads electric current.
Embodiment 4
The difference of the present embodiment and embodiment 1 is: the Nano semiconductor particles 3a in described the second nanometer layer can adopt the insulator that approaches with the semi-conducting material refractive index to replace, and to reach reduction voltage, increases the purpose of light extraction efficiency.
Claims (6)
1. a nanoscale light-emitting diode comprises matrix, it is characterized in that: described matrix surface successively layer is provided with the first nanometer layer and the second nanometer layer;
Described the first nanometer layer is connected and composed by nanoscale high-conductive metal line, and described high-conductive metal wire loop and is connected on the contact at matrix middle part around the aspect of the first nanometer layer simultaneously,
Described the second nanometer layer is constituted by several Nano semiconductor particles, and described Nano semiconductor particles is evenly arranged on the aspect of the second nanometer layer around the contact, matrix middle part.
2. a kind of nanoscale light-emitting diode according to claim 1 is characterized in that: the nanoscale high-conductive metal line collocation in described the first nanometer layer has transparency conducting layer.
3. a kind of nanoscale light-emitting diode according to claim 1 and 2 is characterized in that: the nanoscale high-conductive metal line in described the first nanometer layer can adopt to have the nano dot that can help the even expanding of electric current and replaces.
4. a kind of nanoscale light-emitting diode according to claim 1 is characterized in that: the Nano semiconductor particles in described the second nanometer layer can adopt the insulator that approaches with the semi-conducting material refractive index to replace.
5. a kind of nanoscale light-emitting diode according to claim 1, it is characterized in that: the metal material of the nanoscale high-conductive metal line in described the first nanometer layer is gold or silver or aluminium.
6. a kind of nanoscale light-emitting diode according to claim 2 is characterized in that: the transparency conducting layer in described the first nanometer layer is the tin-doped indium oxide nesa coating, mix indium zinc oxide transparent conducting film, aluminum-doped zinc oxide transparent conducting film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220296028 CN202712251U (en) | 2012-06-25 | 2012-06-25 | Nanoscale light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220296028 CN202712251U (en) | 2012-06-25 | 2012-06-25 | Nanoscale light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202712251U true CN202712251U (en) | 2013-01-30 |
Family
ID=47592523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220296028 Expired - Lifetime CN202712251U (en) | 2012-06-25 | 2012-06-25 | Nanoscale light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202712251U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633236A (en) * | 2016-01-06 | 2016-06-01 | 厦门市三安光电科技有限公司 | Light-emitting diode and manufacturing method thereof |
-
2012
- 2012-06-25 CN CN 201220296028 patent/CN202712251U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633236A (en) * | 2016-01-06 | 2016-06-01 | 厦门市三安光电科技有限公司 | Light-emitting diode and manufacturing method thereof |
| US10205061B2 (en) | 2016-01-06 | 2019-02-12 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light emitting diode and fabrication method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130130 |
|
| CX01 | Expiry of patent term |